• Journal of the Korean Society for Heat Treatment
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• v.3 no.3
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• pp.5-12
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• 1990

This study has been conducted to establish the carburizing characteristics of low carbon alloy steels with varying amount of Ni element gas-carburized for 2 hours at $930^{\circ}C$ in an atmosphere of 94% $N_2$-6% $C_3H_8$ gas mixture with some changes in gas pressure passing through the diffusion plate in the fluidized-bed furnace. The results obtained from the experiment are as follows : (1) Optical micrograph has shown that the carburized layer consists of retained austenite and plate martensite and that retained austenite increases as the pressure of gas mixture passing through the diffusion plate as well as Ni content increase. (2) Chemical analysis has shown that carbon potential increases and carburizability is also improved due to a less degree of fluidization as the pressures of gas mixtures passing through the diffusion plate increase, resulting in, however, a severe formation of soot, and the gas pressure is necessarily regulated. (3) It has been revealed that carbon concentration hardness values at a given distance measured from the surface within the carburized case. Increase with increasing the pressure of gas mixtures passing through the diffusion plate and decrease with increasing Ni content. (4) The effective case depth has been shown to almost linearly increase as the pressure of gas mixtures passing through the diffusion plate is increased and to decrease with increasing Ni content.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.34 no.2
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• pp.99-103
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• 2010

A new analytic solution was derived for the diffusion into or from an immobile zone of a rectangular 2-D pore. For a long time, the new solution converges to a traditional mobile-immobile zone (MIM) model, but only if the latter is used with an apparent initial concentration that is smaller by almost 20% than the true one. This is the tradeoff for using a simple MIM model instead of an exact model based on the diffusion equation. The mass-transfer coefficient was found to be constant for a sufficiently long time; it was proportional to the molecular diffusion and inversely proportional to the square of the pore depth. The mass-transfer coefficient was time-dependent for a sufficiently short time and may be significantly larger than its asymptotic value.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• Korean Journal of Metals and Materials
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• v.48 no.11
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• pp.995-1002
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• 2010

This study investigated the effect of process temperature on the alloying process during synthesis of $Sm_2Fe_{17}$ powder from ball-milled samarium oxide ($Sm_2O_3$) powders and a solid reducing agent of calcium hydrides ($CaH_2$) using iron nanopowder (n-Fe powder) by a reduction-diffusion (R-D) process. The $n-Fe-Sm_2O_3-CaH_2$ mixed powders were subjected to heat treatment at $850{\sim}1100^{\circ}C$ in $Ar-H_2$ for 5 h. It was found that the iron nanopowders in the mixed powders are sintered below $850^{\circ}C$ during the R-D process and the $SmH_2$ is synthesized by a reduced Sm that combines with $H_2$ around $850^{\circ}C$. The results showed that $SmH_2$ is able to separate Sm and $H_2$ respectively depending on an increase in process temperature, and the formed $Sm_2Fe_{17}$ phase on the surface of the sintered Fe nanopowder agglomerated at temperatures of $950{\sim}1100^{\circ}C$ in this study. The formation of the $Sm_2Fe_{17}$ layer is mainly due to the diffusion reaction of Sm atoms into the sintered Fe nanopowder, which agglomerates above $950^{\circ}C$. We concluded that nanoscale $Sm_2Fe_{17}$ powder can be synthesized by controlling the diffusion depth using well-dispersed Fe nanopowders.

• Journal of the Society of Disaster Information
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• v.11 no.4
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• pp.548-555
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• 2015

This paper aims to estimate the service life of the target bridge structures subjected to chloride ingress from de-icer, which is used for safety of vehicles in winter, by investigating the chloride ingress into concrete. In this study, the 10-year-old bridge structures were investigated by measuring the chloride along the depth from the exposed surface to derive the surface chloride concentration and the diffusion coefficient for the prediction of service life. The service life of each measured point on the structures were estimated with the surface chloride concentration and the diffusion coefficient by using Life-365 software. As a result, it was estimated for all measured points to have over 100-year service life. Furthermore, the diffusion coefficient and the service life from the measured data were compared to another method calculated with the concrete mix, considering the time dependency of diffusion coefficient.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.3
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• pp.121-125
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• 2016

The effect of temperature and pressure in the nitrogen ambient furnace on bulk micro defect (BMD) and denuded zone (Dz) is experimentally investigated. It is found that as pressure increases, Dz depth increases with a small decrease of BMD density in the range of temperature, $100{\sim}300^{\circ}C$. BMD density with hot isostatic pressure treatment (HIP) at temperature of $850^{\circ}C$ is higher than that without HIP while Dz depth is lower due to much higher BMD density. As the pressure increases, BMD density is increased and saturated to a critical value, and Dz depth increases even if BMD density is saturated. The concentration of nitrogen increases near the surface with increasing pressure, and the peak of the concentration moves closer to the surface. The nitrogen is gathered near the surface, and does not become in-diffusion to the bulk of the wafer. The silicon nitride layer near the surface prevents to inject the additional nitrogen into the bulk of the wafer across the layer. The nitrogen does not affect the formation of BMD. On the other hand, the oxygen is moved into the bulk of the wafer by increasing pressure. Dz depth from the surface is extended into the bulk because the nuclei of BMD move into the bulk of the wafer.

• Design & Manufacturing
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• v.14 no.1
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• pp.63-68
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• 2020

Ultra-high brightness and thin displays need to optical micro-patterns which can uniformly diffuse the lights and low loss. The micro random patterns have characteristics to rise the optical efficiency such as light extraction, uniform diffusion. For this reason, various fabrication processes are studied for random patterns. In this study, the micro random patterns were machined by diamond turning which used a controlled cutting tool path with random cutting depth. The machined patterns had random shape and directionality along the circumferential direction. The average width and length of machined random pattern according to rotation radius were 40.13㎛~55.51㎛ and 37.25㎛~59.49㎛, and these results were compared with the designed result. Also, the machining error according to rotation radius in diamond turning using randomly controlled cutting depth was discussed.

• Tribology and Lubricants
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• v.13 no.1
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• pp.42-52
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• 1997

This paper deals with wear characteristics of ion-nitrided metal theoretically and experimentally in order to analysis of wear phenomena. Wear tests show that compound layer of ion-nitrided metal reduces wear rate when the applied wear load is mall. However, as th load becomes large, the existence of compound layer tends to increase wear rate. The residual stress at the surface of ion-nitrided metal is measured, and the internal stress distribution is calculated when the normal and tangential forces are applied to the surface of metal. Compressive residual stress is largeest at the compound layer, and decreases as the depth from the surface increases. Calculation shows that the maximum stress exists at a certain depth from the surface when normal and tangential force are applied, and that the larger the wear load is the deeper the location of maximum stress becomes. In the analysis, it is found that under small applied wear load the critical depth, where voids and cracks may be created and propagated, is located at the compound layer, as the adhesive wear, where hardness is an important factor, is created the existence of compound layer reduces the amount of wear. When the load becomes large the critical depth is located below the compound layer, and delamination, which may be explained by surface deformation, crack nucleation and propagation, is created, and the existence of compound layer increases wear rate.

• Journal of the Korean Society of Food Culture
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• v.34 no.4
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• pp.411-423
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• 2019

This study conducted qualitative research through in-depth interviews on the diffusion process of Korean food in accordance with the length of residence of Chinese students in Korea. As the analysis method, the qualitative analysis method such as NVivo12.0 was used, and the analysis was performed through word frequency, word cloud, and coding matrix. The images of taste of Korean food were revealed as 'Spicy', 'Sweet', and 'Light taste' by both short-term Chinese residents and long-term Chinese residents. The long-term Chinese residents showed their dissatisfaction with the institutional food, and they also pointed out the importance of the matter of cooking for quick adaptation to life in Korea. The long-term Chinese residents also thought of Korean food as 'High-fiber food', and this was influenced by the 'Less-oil' cooking method of Korean food, which is different from the cooking method of Chinese food. The length of residence was used as a main variable of this study, and it was one of the factors having positive effects on the diffusion of Korean food and acculturation. It would be difficult to generalize the results because this study used the convenience sampling method and snowball sampling.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.232-232
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• 2012

The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in $SiO_2$ matrix. Secondary ion mass spectrometry (SIMS) is a powerful technique for the in-depth analysis of solid materials and the impurities analysis of boron and phosphorus in semiconductor materials. For the study of diffusion behaviour of B and P by SIMS, Si/$SiO_2$ multilayer films doped by B or P were fabricated and annealed at high temperatures for the activated doping of B and P. The distributions of doping elements were analyzed by SIMS. Boron found to be preferentially distributed in Si layer rather than the $SiO_2$ layer. Especially the B in the Si layers was separated to two components of an interfacial component and a central one. The central component was understood as the activated elements. On the other hand, phosphorus did not show any preferred diffusion.