• 한국수정란이식학회지
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• 제20권2호
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• pp.157-162
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• 2005

To find out the possible inefficiencies of artificial inseminators at rectovaginal insemination in cows, inseminators' skill were evaluated by controlling the semen thawing procedure adopted and by using the technique of dye deposition in the genital tract of slaughtered cows. This was followed by refreshment training for the inseminators. Thirty seven artificial insemination technicians regularly working in the government, cooperative and NGO (Non Government Organization) artificial insemination programmes at different places of Bangladesh were included in the study. Individual technicians were asked to thaw a semen straw and deposit dye in the genital tract of slaughtered cows following the procedures they would have adopted in their actual practices of insemination. The time and water temperature adopted by technicians were recorded and genital tract after sham artificial insemination was dissected to determine the site of dye deposition. Then, the inseminators took part in a three days intensive training program. The training program was ended up with the same tests for thawing frozen semen straw and dye deposition in the genital tract of slaughtered cows. At pre training evaluation, only $25\%\;and\;72\%\;(n=36)$ inseminators adopted co..ect thawing time and temperature, respectively. At post training evaluation, all inseminators thawed semen straws for proper time and temperature. At pretraining evaluation, $21(57\%),\;11 (30\%)\;and\;3(8\%)$ inseminators deposited dye at the body of uterus, in the vagina or in cervix, and into the horn of uterus, respectively. In $2(5\%)$ cases dye did not pass into the genital tract, instead back flowed through the space between the barrel of insemination gun and sheath. At post training evaluation, all inseminators successfully deposited dye in the body of uterus. Frequent evaluation of inseminators' skill and subsequent training would help improvement of the artificial insemination technicians' skill.

• Journal of Radiation Protection and Research
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• 제18권1호
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• pp.9-24
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• 1993

원자력발전소의 사고시 방사성물질의 단기간 침적 후 오염된 음식물에 의한 영향을 평가하기 위해 한국 환경에 적용이 가능한 동적 방사능영향 평가모델이 개발되었다. KORFOOD라 불리워지는 이 모델은 오염된 음식물의 섭취에 의한 누적선량뿐만 아니라 시간에 따른 선량을 평가하며, 또한 음식물내 시간에 따른 방사능농도의 변화를 해석한다. 설식경로에 중요한3가지 핵종과 13가지 음식물이 이 모델에서 고려되었다. 방사능농도의 동적변화는 침적, 풍화와 강우, 재부유, 뿐리흡취, 전이, 토양내 이동, 식물의 노화, 동물의 토양흥취 및 배설, 동물의 사료섭취와 배설 둥과 같은 여러 효과를 고려하여 모사되었다. 평가를 위한 입력 자료로는 침적되는 방사성물질의 양, 침적시점, 평가하고자하는 핵종 및 음식물의 종류가 요구된다. 고리지역 농작물자료를 사용하여 쌀에 대해 시간에 따른 비방사능농도와 고려되는 모든 음식물의 섭취에 따른 선량이 침적시점에 따라 계산되었다. 모델결과의 타당성 검증을 위해 이 분야에서 이미 공인받고 있는 독일모델 ECOSYS-87의 결과와 비교하였다. 비교결과, KORFOOD의 예측치가 ECOSYS-87의 예측값의 10배 범위내에 있어 좋은 일치를 보여주었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• 한국전기전자재료학회논문지
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• 제30권1호
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• pp.32-36
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• 2017

The Ag thin film of YBCO (yttrium barium copper oxide) CC (coated conductor) protect the YBCO layer and, at the same time, affects the electrical characteristics of the YBCO CC. Therefore, YBCO CC with the commercialization of the Ag thin film layers makes it easy to establish a process, it can lead to a variety of characteristic changes in YBCO CC. In this paper, plasma surface treatment was carried out to facilitate the deposition of the Ag thin film and the deposition process of YBCO CC. Surface roughness from the test results was increased as the time of the plasma surface treatment increased from 5 to 20 minutes. On the other hand, the surface roughness was decreased for the time of the plasma surface treatment over 20 minutes. Furthermore, after depositing, the increasing of deposit amount and reduced lifting phenomenon showed a similar tendency with the rise time of surface roughness.

• 한국세라믹학회지
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• 제37권3호
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• pp.263-270
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• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• 한국정보통신학회논문지
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• 제6권5호
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• pp.689-695
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• 2002

막질의 조성은 공정 개발과 고품질 생산 적용을 위한 반도체 소자의 제조에 있어서 풍요한 요소의 하나 이다. 막의 표면과 계면의 조성은 기본적으로 AES측 통하여 알 수 있다. 본 연구에서는 온도, DCS post flow, shower head life time 등과 같은 공정조건으로 LPCVD법을 이용한 tungsten suicide 박막을 증착하고 이들의 구조적, 전기적 특성과 조성비를 측정하며 WSix박막을 해석하였고 이로부터 Si/W의 조성비를 비교하였다. Si와 W의 조성비는 DCS post flow에 의하여 WSix박막의 표면에서 증가하였으며, 폴리실리콘과 tungsten silicide 계면에서는 온도의 증가에 따라 조성비가 증가함을 알 수 있었다. 이 결과는 메모리 소자 제조의 WSix 박막 증착의 공정조건 최적화에 적용될 수 있다.

• 한국초전도ㆍ저온공학회논문지
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• 제10권4호
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• pp.6-8
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• 2008

$Y_{2}O_{3}$ nanodots have been deposited on top of the substrate surface using rf-sputtering method. This approach was adopted to be able to modulate the substrate surface with nanodots used as a seed for the flux pinning sites in the superconducting films. The nanodot density of $Y_{2}O_{3}$ was controlled mainly using the deposition time, rf-power, and substrate temperature. $Y_{2}O_{3}$ nanodots with ${\sim}\;50\;nm$ in diameter and ${\sim}\;3\;nm$ in height were obtained at rf-sputtering time of about 15 seconds using 400 watts of rf-power and $630^{\circ}C$ of substrate temperature. As deposition time increased up to about 30 seconds, the interconnected islands of $Y_{2}O_{3}$ nanodots formed, which can be clearly observed with AFM surface image. The substrate surface was covered entirely with $Y_{2}O_{3}$ layer above the deposition time of 60 seconds. The modulated surface morphologies and cross section analysis of deposited $Y_{2}O_{3}$ nanodots at various experimental conditions have been examined using AFM and discussed with respect to the flux pinning sites for the practical application.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.97-101
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• 1995

GaN films were prepared on Si(111) substrates by hydride vapor phase epitaxy (HVPE) on HCl-NH$_3$-N$_2$gas system. Effects of HCl gas flow rate on the film investigate under deposition conditions of flow time of 10min, 20min, 30min. The deposition rate increased with increasing HCl gas flow rate in the range of 10cc/min to 40cc/min and deposition time. Strung (00.2) oriented GaN film was obtained at a lower HCl flow rate and improved of the surface morphology.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.258-260
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• 1993

Aluminum thin films were deposited on glass substrate using DC Magnetron Sputtering. Deposition rate, specular reflectance, and resistivity were investigated as a function of the input power, pressure, substrate temperature, and deposition time. Reflectance was reduced with increasing power, also with prolonging deposition time. Topography of the surface, which influences the properties such as electromigration, was observed from scanning electron microscope (SEM) and there was a close relation between the topography and measured reflectance.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.316-316
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• 2014

Two different transparent conducting oxide (TCO) layers of Al-doped ZnO (AZO) and $WO_3$ were prepared by a rf sputtering process. Working pressure, deposition time, and target-to-substrate distance were varied for the sputtering process to improve electrical properties of the resulting layer. Thickness of the TCO layers was measured by a profile meter of ${\alpha}$-step. To evaluate the electrical conductivity, surface resistivity of the TCO layers was measured by a four-point probe technique. Decrease of the working pressure resulted in increase of deposition rate and decrease of surface resistivity of the resulting layer. Increase of the layer thickness due to increased deposition time resulted in decrease of surface resistivity of the resulting layer. The shorter the target-to-substrate distance was, the lower was the surface resistivity of the resulting layer.