• Applied Chemistry for Engineering
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• v.29 no.4
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• pp.382-387
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• 2018

In this study, the reaction characteristics of combined steam and carbon dioxide reforming of methane (CSCRM) reaction using Pd-Ni-YSZ catalyst were investigated according to types of catalysts and gas compositions. Catalysts were prepared in the form of powder and porous disk. The injected gases were supplied at different ratios of $CH_4/CO_2/H_2O$. As a result, the conversion of $CH_4$ and $CO_2$ was improved as a result of using the porous disc type catalyst as compared with that of the powder type catalyst. When the $CH_4/CO_2/H_2O$ ratio of the feed gas was 1 : 0.5 : 0.5, the $H_2/CO$ ratio was adjusted close to 2. However, after 6 hours of the reaction, $CH_4$ conversion was partially reduced by the carbon deposition and the pressure drop increased from 0.1 to 0.8. This issue was then solved by optimizing the water content. As a result, it was confirmed that the durability was secured by preventing the carbon deposition when the gas was supplied at a $CH_4/CO_2/H_2O$ ratio of 1 : 0.5 : 1, and the conversion rate was maintained at a relatively high level.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Journal of the Korean Vacuum Society
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• v.11 no.3
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• pp.183-188
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• 2002

In the present study AI$(CH_3)_3)$films were deposited by the ALD technique using trimethylaluminum(TMA) and ozone to improve the quality of the AI$(CH_3)_3)$ films, since the $OH^-$ radicals existing in the AI$(CH_3)_3)$ films deposited using TMA and $H_2O$ degrade the physical and the dielectric properties of the AI$(CH_3)_3)$ film. The XPS analysis results indicate that the $OH^-$ radical concentration in the AI$(CH_3)_3)$film deposited using $O_3$is lower than that using $H_2O$. The etch rate of the AI$(CH_3)_3)$film deposited using $O_3$is also lower than that using $H_2O$, suggesting that the chemical inertness of the former is better than the latter. The MIS capacitor fabricated with the TiN conductor and the $Al_2$O$_3$dielectrics formed using $O_3$offers lower leakage current, better insulating property and smaller flat band voltage shift $({\Delta}V_{FB})$.

• Applied Chemistry for Engineering
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• v.5 no.2
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• pp.199-208
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• 1994

In this study, the ultrasound which provides the properties of mixing, and surface cleaning effect, the increase of the effective reaction surface area and the enhancement of the effective collision frequency, was used to enhance the recovering efficiency of Cu from the Cu-ion containning waste water. The ultrasonic reactor used in this study was designed and constructed for improving the disadvantage of the existing ultrasonic reactor. From the experimental result and its analysis, we obtained following conclusions. 1. The ultrasound increased the rate of electrochemical deposition to 582.2% in maximum at the condition of $0.1M-CuSO_4$, and 2.1 V-overpotential. 2. The enhancement effect of ultrasound induced by the reduction of diffusion layer thickness was 277.8% in maximum and induced by the other effect except for the reduction effect of the diffusion layer thickness was 253.6% in maximum at $0.1M-CuSO_4$ and 2.1V overpotential. 3. This study gave the possibility of the scale-up of ultrasonic reactor and in particular, ultrasonic reactor would be effective in the treatment of waste water containning a low concentration of Cu ion.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.87-87
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• 2018

다이아몬드 상 탄소(diamond-like carbon, DLC)는 상당량의 $sp^3$ 결합을 가지는 비정질 탄소(a-C) 또는 수소화 비정질 탄소(a-C:H)로 이루어진 준안정 형태의 탄소이다. DLC는 전기 저항과 굴절률이 높고 화학적으로 다른 물질과 반응하지 않으며, 마찰계수가 낮고 경도가 높아 자기 디스크, 광학 소자 등의 다양한 분야에서 적용되고 있다[1,2]. 또한 다이아몬드에 비해 상온에서 성장이 가능할 정도로 합성온도가 낮아 적용 기판의 제한이 거의 없고, 증착 방법과 조건에 따라 탄소 결합의 다양성과 비정질성이 변화하기 때문에 넓은 범위의 특성을 얻을 수 있는 장점이 있다. 지금까지 DLC 박막의 광학적 특성, 특히 굴절률, 광학적인 에너지 밴드 갭, 자외선과 적외선 투과성에 대해서는 많은 연구가 진행되었으나 가시광선의 투과성에 대한 연구는 제한적이며[4], 가시광선 투과도 개선에 대한 연구는 전무하다. 본 연구에서는 ITO 기판 위에 DLC를 합성하고 기계적 특성과 가시광선 영역 투과도를 조사하였다. RF-PECVD(radio frequency plasma enhanced chemical vapor deposition) 방법에 의해서 $C_2H_2+Ar$ 혼합 가스 비율과 $C_2H_2+N_2$ 혼합 가스 비율을 변화시켜 ITO 기판 위에 DLC 박막을 합성하였다. 공정 압력과 rf-power, 증착시간, 기판온도는 0.2 torr, 40 W, 5 분, $50^{\circ}C$로 고정하고, 공정 가스는 $C_2H_2+Ar$과 $C_2H_2+N_2$가 200 sccm이 되도록 비율을 변화하였다. $C_2H_2:Ar$과 $C_2H_2:N_2$의 비율은 180 : 20, 160 : 40, 140 : 60, 120 : 80, 100 : 100이 되도록 가스의 유량을 조절하였다. 투과도는 가시광선(380 ~ 780 nm) 범위에서 측정하였고 두께와 표면조도는 AFM으로 측정하였다. 투과도는 $C_2H_2+Ar$의 Ar 가스 비율이 증가할수록 증가해 140 : 60일 때 최댓값을 나타낸 후 다시 감소하였다. $C_2H_2+N_2$ 투과도는 $N_2$ 가스 비율이 증가할수록 감소하는 경향을 나타내었다. 표면 거칠기는 $C_2H_2+Ar$ 혼합 가스를 사용한 경우의 Ar의 가스 비율이 증가할수록 증가하였다. 그러나 $C_2H_2+N_2$ 혼합 가스를 사용한 경우에는 $N_2$ 가스의 혼합 비율이 증가할수록 감소하였다.

• Development and Reproduction
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• v.6 no.1
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• pp.37-44
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• 2002

First sexual maturity, sex ratio, spawning frequency, deposition of the egg capsules and fecundity of the female Rapana venosa(Valenciennes) inhabited in the artificially closed slag deposit area, Gwangyang Bay were investigated by histologicai and visual observations for natural living resource management. The rate of individuals reaching the first sexual maturity was 51.6％ in females measuring 7.1~8.0 cm in shell height, and 100％ in those > 10.1 cm. The total number of egg capsules per individual and the mean number of eggs in an egg capsule were 192~382 and 500, respectively. However, the number of eggs per individual and sizes of egg capsules under lower salinity and deficient food conditions in the closed slag deposit area were smaller than those under the optimum salinity and sufficient food conditions in the open regions. Fecundities of the species were approximately from 96,000 to 191,000 eggs/individual with two to low broods(spawning frequencies) during the spawning season. The duration of development in egg capsules was 18~19 days at about 18~2$0^{\circ}C$. R. venosa is a species whose embryos hatch as veliger larvae, not juvenile snail. The sex ratio of female : male was not significantly different from 1 : 1($\chi$$^2$= 0.23, p>0.05).

• Journal of Korean Society for Geospatial Information Science
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• v.17 no.3
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• pp.23-31
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• 2009

The border of the shorelines in a nation is an important factor in determining the border of a national territory, but Korea's shorelines are rapidly changing due to the recent rise in sea level from global warming and growth-centered economic policy over the decades of years. This research was done centering on the areas having well-preserved shorelines as they naturally are and other areas having damaged shorelines in their vicinities due to artificial structures at the two beaches located at the neighboring areas and having mutually homogeneous ocean conditions with each other. First, this research derived the shorelines using the aerial photographies taken from 1947 until 2007 and revised the tidal levels sounding data obtained from a hydrographical survey automation system consisting of Echosounder[Echotrac 3100] and Differential Global Positioning System[Beacon]by using topographical data and ships on land obtained by applying post-processing Kinematic GPS measuring method. In addition, this research evaluated the changes and dimensional variations for the last 60 years by dividing these determined shorelines into 5 sections. As a result, the Haewundae Beach showed a total of 29% decrease rate in dimension as of the year 2007 in comparison with the year 1947 due to a rapid dimensional decline centering on its west areas, while the dimension of the Gwanganri Beach showed an increase in its dimension amounting to a total of 69% due to the decrease in flow velocity by artificial structures built on both ends of the beach-forming accumulation; thus, it was found that there existed a big difference in deposition & accumulation tendency depending on neighboring environment in spite of the homogeneous ocean conditions.

• Journal of the Korean Vacuum Society
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• v.21 no.4
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• pp.199-204
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• 2012

$SF_6$ gas is widely used for dry etching process of semiconductor and display fabrication process. But $SF_6$ gas is considered for typical greenhouse gas for global warming. So it is necessary to research relating to $SF_6$ alternatives reducing greenhouse effect in semiconductor and display. $C_3F_6$ gas is one of the promising candidates for it. We studied about etch characteristics by performing Reactive Ion Etching process of dry etching and reduced gas element exhausted on etching process using absorbent Zeolite 5A. $Si_3N_4$ thin film was deposited to 500 nm with Plasma Enhanced Chemical Vapor Deposition and we performed Reactive Ion Etching process after patterning through photolithography process. It was observed that the etch rate and the etched surface of $Si_3N_4$ thin film with Scanning Electron Microscope pictures. And we measured and compared the exhausted gas before and after the absorbent using Gas Chromatograph-Mass Spectrophotometry.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.217-223
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• 2010

We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.

• Journal of the Korean Geographical Society
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• v.39 no.2
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• pp.269-282
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• 2004

Luminescence dating of a coastal dune from the Shindu dunefield on the T'aean Peninsula shows that deposition of the dune structure began about 500-600 years ago. The lower section of the dune has remained stable since then but the upper part yields an age of about 30 years, suggesting reactivation or additional deposition since the 1970's. The two samples that were collected from the lower part of the dune at depths of 3.5 m and 2.0 m below the surface differ by an age interval of about 50-70 years. This indicates a net depositional rate of around 2.5 cm a year which is relatively slow for a coastal dune. Whilst only one dune structure has been dated for the time being and even though the dunefield was probably established much earlier in the Holocene, the OSL ages obtained demonstrate that some dunes in the area could be younger than 1000 years. Such chronologies point to a dynamic environment where the dune structures are not permanently fixed. Sedimentological properties of the dune sands are consistent with those of particles initially deposited under subaqueous conditions and then later transported by wind.