• Proceedings of the IEEK Conference
• /
• 2001.06b
• /
• pp.237-240
• /
• 2001

In this paper, we have presented processing technique about wet etching for silicon membrane construction formation. In order to make selective etching of backside silicon wafer, we used Si$_3$N$_4$ layer by PECVD(Plasma Enhanced Chemical Vapor Deposition). We have measured the surface thickness in backside silicon wafer after anisortropic wet etching with KOH:distilled water solutions. Through this experiment, we acquired the etching rate for 1.29${\mu}{\textrm}{m}$/min. The average rough of Si-membrane frontside and backside was 0.26${\mu}{\textrm}{m}$, 0.90${\mu}{\textrm}{m}$, respectively.

• Korean Journal of Optics and Photonics
• /
• v.5 no.2
• /
• pp.340-346
• /
• 1994

2.5Gbps 광통신시스템용 수광소자로서 charge plate층을 갖는 링구조의 separate absorption grading multiplication avalanche photodiode를 제작하고 그 특성을 조사 분석하였다. Avalanche Photodiode의 제작은 Metal-Organic Chemical Vapor Deposition 과 Liquid Phase Epitaxy법을 이용한 에피성장과 Br:Methanol을 이용한 채널식각 방법을 사용하였고, passivation과 평탄화는 photosensitive polyimide를 이용하였다. 제작된 ADP는 10nA 이하의 작은 누설전류를 나타내었고, -38~39 V의 항복전압을 나타내었다. 제작된 ADP를 GaAs FET hybrid 전치증폭기와 결합하여 2.5Gbps 속도에서 $2^{23}-1$의 길이를 갖는 입력 광신호에 대해 $ 10^{-10}$ Bit Error Rate에서 -31.0dBm의 수신감도를 얻었다.

• Journal of Sensor Science and Technology
• /
• v.16 no.3
• /
• pp.229-233
• /
• 2007

The indium tin oxide (ITO) films were deposited on CR39 substrate using DC magnetron sputtering. The ITO thin films deposited at room temperature because CR39 substrate its glass-transition temperature is $130^{\circ}C$. The ITO thin films used bottom and top electrode and for organic thin film transparent transistors (OTFTs). The ITO thin film electrodes electrical properties and optical transparency properties in the visible wavelength range (300-800 nm) strongly dependent on volume of oxygen percent. For the optimum resistivity and transparency of the ITO thin film electrode achieved with a 75 W plasma power, 10 % volume of oxygen and a 27 nm/min deposition rate. Above 85 % transparency in the visible wavelength range (300-800 nm) measured without post annealing process and a low resistivity value $9.83{\times}10^{-4}{\Omega}cm$ was measured thickness of 300 nm. All fabrication process of ITO thin films did not exceed $80^{\circ}C$.

• Proceedings of the International Microelectronics And Packaging Society Conference
• /
• 2003.11a
• /
• pp.118-121
• /
• 2003

The electrochemical behaviors of UBM nickel were investigated. Electrode potential has been changed with the surface composition. Zinc is dissolved into the solution immediately after immersion. Electrode potential has three distinct regions: Zinc dissolution region, transient region and nickel plating region. The effects additives on electrode potential and polarization curves were also investigated. The addition of suppressor lowered the current density which is related with deposition rate.

• Journal of the Microelectronics and Packaging Society
• /
• v.11 no.4 s.33
• /
• pp.75-80
• /
• 2004

In copper metallization, resistivity of copper seed layer is very important. Conventionally MOCVD has been used for this purpose however electroless copper plating is simple process and the resistivity of copper deposit is less than that of copper prepared by MOCVD. In this study electroless copper plating was conducted on different substrate to find optimum conditions of electroless copper plating for electronic applications. To find optimum conditions, the effects and selectivity of activation method on several substrates were investigated. The effects of copper bath composition on morphology were investigated. The effects of pH and stabilizer on deposition rate were also investigated. The optimum pH of the bath was 12 with addition of stabilizer. The resistivity of copper was decreased with addition of stabilizer and alter heat treatment.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.24 no.4
• /
• pp.646-651
• /
• 1987

The photoconductive multilayer composed of glassy, porous, and fine-grained layers was fabdricated with Se and Sb2S3 by vacuum evaporation in order to be used as vidicon target. And its electrical, optical properties were investigatee. The fabrication conditions were as follow: the glassy layer was first deposited to have the thickness of 6500 \ulcornerat the deposition rate of 250\ulcornersec. High photosensitivity(\ulcorner=1) was obtained but its shortcoming was high dielectric constant. Therefore, the porous layer was added to lower dielectric constant and had 7500\ulcornerthick in the argon gas ambikent of 7x10-\ulcorner And the fine-grained layer was formed to prevent secondary electron emission and obtain good resolution. Its thickness was about 1700\ulcorner For the given vidicon target, the light transfer characteristic, that is, photosensitivity (\ulcorner) was measured to be 0.8 at the applied voltage of 25V. The spectral sensitivity was quite similar to that of the human eyes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1992.11a
• /
• pp.84-89
• /
• 1992

The polycrystalline $CuInS_2$ thin films are prepared by vacuum heat treatment of layer, which is deposited by vaccum evaporation in order. The electrical and optical properties of the films are investigated at various sulfur deposition mole rate, substrate temperature, heat treatment temperature and time. From data, n type-$CuInS_2$ exhibits resistivity, transmittance and energy band gap with 142[${\Omega}{\cdot}cm$], 73[%], and 1.5[eV] respectively at optimum fabrication condition. Finally, the films are fabricated with chalcoprite structure.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1428-1430
• /
• 1996

Thin Silicon oxynitride(SiON) films have been chemically deposited using 193nm ArF Excimer Laser CVD, with $Si_{2}H_{8}$, $N_{2}O$, and $NH_3$ as the reactive gases and $N_2$ as the carrier gas. Experimental results show that deposition rate and refractive index have a strong dependence on substrate temperature, chamber pressure, gas ratio, laser power and laser beam height. Electrical characterization of oxynitride films demonstrates that for $NH_{3}/N_{2}O$ flow ratios ranging from 0.25 to 1, the leakage currents, the interface trap density and the capacitances (dielect ric constant) increase and the dielectric breakdown fields decrease

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.248-248
• /
• 2010

We have demonstrated new functionalities of Ag-doped chalcogenide glasses based on their capabilities as solid electrolytes. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics, and Ag saturation is related to the composition of the hosting material. Silver saturated in chalcogenide glass has been used in the formation of solid electrolyte, which is the active medium in the programmable metallization cell (PMC) device. In this paper, we investigated the optical properties of Ag-doped chalcogenide thin film by He-Ne laser beam exposure, which is concerned with the Ag-doping effect of PMCs before or after annealing. Chalcogenide bulk glass was fabricated by a conventional melt quenching technique. Amorphous chalcogenide and Ag thin films were prepared by e-beam evaporation at a deposition rate of about $4\;{\AA}/sec$. As a result of resistance change with laser beam exposure, the resistance abruptly dropped from the initial value of $1.4\;M{\Omega}$ to the saturated value of $400\;{\Omega}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07a
• /
• pp.208-211
• /
• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.