Journal of the Korean Institute of Telematics and Electronics (대한전자공학회논문지)
- Volume 24 Issue 4
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- Pages.646-651
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- 1987
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- 1016-135X(pISSN)
Fabrication and Properties of Photoconductive Multilayer Using Se and $Sb_2S_3$
Se와 $Sb_2S_3$ 를 이용한 광도전막의 제작과 그 특성
Abstract
The photoconductive multilayer composed of glassy, porous, and fine-grained layers was fabdricated with Se and Sb2S3 by vacuum evaporation in order to be used as vidicon target. And its electrical, optical properties were investigatee. The fabrication conditions were as follow: the glassy layer was first deposited to have the thickness of 6500 \ulcornerat the deposition rate of 250\ulcornersec. High photosensitivity(\ulcorner=1) was obtained but its shortcoming was high dielectric constant. Therefore, the porous layer was added to lower dielectric constant and had 7500\ulcornerthick in the argon gas ambikent of 7x10-\ulcorner And the fine-grained layer was formed to prevent secondary electron emission and obtain good resolution. Its thickness was about 1700\ulcorner For the given vidicon target, the light transfer characteristic, that is, photosensitivity (\ulcorner) was measured to be 0.8 at the applied voltage of 25V. The spectral sensitivity was quite similar to that of the human eyes.
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