• The Korean Journal of Ceramics
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• v.7 no.2
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• pp.85-92
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• 2001

Thin films of ZnO and Al doped ZnO were prepared by rf magnetron sputter techniques. When the oxygen fraction in Ar-O$_2$ sputter gas was about 2.0%, the films exhibited the composition of Zn:O=1.05:1. The films prepared at 250 W contain larger grains than the films grown at 100 W. However, high deposition rate seems to deteriorates the crystallinity as well as Al-substitution, resulting in lower concentration of mobile electrons. The Al-doped ZnO films which were deposited at $500^{\circ}C$ show resistance of 1$\times$10$^-2$ Wcm; optical band gap of the films ranges from 3.25 to 3.40 eV. These electrical and optical features are related with microstructural as well as crystalline characteristics of the films.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.965-969
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• 2008

MgO thin film is widely used in PDP panel for protecting the dielectric layer and making firing voltage low. In this paper, the MgO thin film and discharge characteristics was analyzed as hydrogen flow rate increasing. Using hydrogen in deposition chamber makes add delay time of PDP module longer or shorter. It is the reason why thin film surface layer thickness on the MgO surface changes.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.653-655
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• 2003

Using stacked organic gate insulators and active layer of pentacene deposited at elevated temperatures, pentacene-based organic thin-film transistors(OTFTs) with improved electrical characteristics have been fabricated. Stacked PVP(Polyvinylphenol)-polystyrene gate insulators could compensate the demerits and take advantage of the merits of each other [1]. Also, for the better device performance, moderate substrate heating and high deposition rate of pentacene active layer was adopted [2, 3].

• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.386-389
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• 1989

Phosphorus nitride films on InP surface were grown by a Photo-CVD (chemical vapor deposition) technique over 100-250 $^{\circ}C$ range of substrate temperature, which is based on direct photolysis of $PCl_3/H_2$ and $NH_3$ gas mixtures by 185nm ultraviolet light from a low pressure mercury lamp. The film growth rate ed the refractive index(n) were shown about 700-800 ${\AA}/hr$ and 1.7-1.8, respectively. Composition ratio and interface properties were analyzed by AES(Auger Electron Spectroscopy) and XPS (X-ray Photoelectron Spectorscopy) technique.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1515-1517
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• 2001

In this work the electrical characteristics of organic TFTs with the semiconductor-insulator interfaces have been interested. Pentacene is used as an active semiconducting layer. The semiconductor layer of pentacene was thermally evaporated in vacuum at a pressure of about $2{\times}10^{-6}$ Torr and at a deposition rate of 0.3$\AA$/sec. Aluminium and gold were used for gate and source/drain electrodes. before pentacene is deposited on the insulator, the gate dielectric surfaces of two samples were rubbed with lateral and perpendicular to direction of the channel length respectively.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1478-1480
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• 2001

ZnO : Al transparent conductive thin films were prepared by facing targets sputtering system with a DC power supply which can deposit a high quality thin films and control deposition condition in all range of $O_2$ gas ratio using ZnO target containing 8 at% of Al. Sputtering was carried out at a substrate temperature of R T with a DC current of 0.6 A and $O_2$ flow rate of 0 $\sim$ 0.9. The characteristics of ZnO : Al thin films was investigated by $\alpha$-step, four point probe, X-ray diffraction and UV/VIS spectrometer.

• Journal of the Korean Ceramic Society
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• v.34 no.4
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• pp.387-393
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• 1997

In order to apply WO3 thin films to the semiconducting NOx gas sensors as a sensing material, which have been expected to show good electrical properties, such as large sensitivity, rapid responsibility, and high selectivity, the fabrication method and their sensing characteristics were studied. The variations of surface morphologies, crystallographic orientations and crystallinity with the WO3 thin film growing methods thermal evaporation and DC sputtering methods were investigated by using scanning electron microscopy (SEM) and X-ray diffraction(XRD) analysis. As a result of sensitivity (Rgas/Rair) measurements for the 5 ppm NO2 test gas, the sensitivity values were 113 for the sputtered films and 93 for the evaporated films. It was also observed that the recovery rate of a sensing signal after measuring sensitivity was faster in the sputtered films than in the evaporated films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.748-752
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• 2004

The Hydrogenated amorphous carbon (a-C:H) thin films are deposited to fabricate suppored layer on silicon substrate with a closed field unbalanced magnetron(CFUBM) sputtering system. This study focuses on the characteristic of Diamond like carbon (DLC) films and Pb(Zr,Ti)$O_3$ (PZT) films for membrane structure. The deposition rate and the surface roughness of DLC fims decrease with DC bias voltage. hardness is 26 GPa at -200 V. Interface of DLC/Si and Pt/DLC layers was excellent.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1514-1515
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• 1998

Diamond thin films were deposited on n-type (100) Si wafers from $H_2-CH_4$ gas mixture by rf PACVD. Prior to deposition, mechanical scratching was done to improve density of nucleation sites with diamond paste of 3${\mu}m$. The microstructure of deposited diamond thin films was studied by using the following conditions : discharge power of 500W, $H_2$ flow rate of 50sccm, reaction pressure of 20torr, and $CH_4/H_2$ ratio of 0.3$\sim$1%. The deposited diamond thin films showed that the crystallite was increased at the lower methane concentration. The deposited thin films were characterized by Scanning Electron Microscopy. Raman Spectroscopy and Fourier-Transform Infrared Spectroscopy.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.670-677
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• 2003

Although Gas Tungsten Arc Welding (GTAW or TIG welding) is considered as high quality and precision welding process, it also has demerit of low melting rate. Narrow-gap TIG welding which has narrow joint width reduces the groove volume remarkably, so it could be shorten the welding time and decrease the overall shrinkage in heavy wall pipe welding. Generally Narrow-gap TIG welding is used as orbital welding process, it is important to select the optimum conditions for the automatic control welding This paper looks at the application and metallurgical properties on Narrow-gap TIG welding joint of heavy wall large austenitic stainless steel pipe to determine the deposition efficiency, the resultant shrinkage and fracture toughness. The fracture toughness depends slightly on the welding heat input.