Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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PHOSPHORUS NITRIDE FILMS ON InP SURFACE BY PHOTO-CVD

광CVD에 의한 InP기판 위에 질화인막의 성장

  • 홍연태 (포항공과대학 전자전기공학과) ;
  • 이재학 (포항공과대학 전자전기공학과) ;
  • 정윤하 (포항공과대학 전자전기공학과) ;
  • 배영호 (산업과학기술연구소 전자전기연구분야) ;
  • 김광일 (산업과학기술연구소 전자전기연구분야) ;
  • 정욱진 (산업과학기술연구소 전자전기연구분야)
  • Published : 1989.07.21
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Abstract

Phosphorus nitride films on InP surface were grown by a Photo-CVD (chemical vapor deposition) technique over 100-250 $^{\circ}C$ range of substrate temperature, which is based on direct photolysis of $PCl_3/H_2$ and $NH_3$ gas mixtures by 185nm ultraviolet light from a low pressure mercury lamp. The film growth rate ed the refractive index(n) were shown about 700-800 ${\AA}/hr$ and 1.7-1.8, respectively. Composition ratio and interface properties were analyzed by AES(Auger Electron Spectroscopy) and XPS (X-ray Photoelectron Spectorscopy) technique.

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