• Fire Science and Engineering
• /
• v.10 no.3
• /
• pp.3-9
• /
• 1996

The Polyimide thin films based on PMDA and 4,$4^{\circ}$'-DDE were fabricated by VDPM, and their heat resistance characteristics were invastigated by TGA(Thermogravimetry Analyzer). It was found that deposition rate decreased with increasing substrate temperature and the thin films were not fabricated over the substrate temperature of $70^{\circ}$. $T_{TG}$ of weight loss temperature is $565^{\circ}$, $397^{\circ}$ and $210^{\circ}$ at the substrate temperature of $20^{\circ}$, $40^{\circ}$ and $70^{\circ}$, respectively. It is realized that the endurace temperature for 20,000 hour of thin films fabricated at $20^{\circ}$ and $40^{\circ}$ is $230^{\circ}$ and $200^{\circ}$, respectively.

• Applied Chemistry for Engineering
• /
• v.31 no.5
• /
• pp.509-513
• /
• 2020

The performance of TiO₂ microcones/CNT composites as an anode material for lithium ion batteries was investigated. TiO₂ microcones/CNT composites were prepared by the polarization followed by electrophoretic deposition approaches on anodic TiO₂ microcones, which were composed of individual nanofragments resulting in a large surface area where lithium ion can be stored. Compared to pristine TiO₂ microcones, TiO₂ microcones/CNT composite electrodes showed higher areal capacity with a stable cyclability due to an enhanced electrical and lithium ion conductivity. Furthermore, TiO₂ microcones/CNT composite electrodes exhibited good cycle life characteristics and excellent rate retention under a high current density of up to 20 C.

• Journal of the Korean Electrochemical Society
• /
• v.2 no.1
• /
• pp.46-49
• /
• 1999

Lithium cobalt oxide cathode for thin-film rechargeable lithium batteries were fablicated by electron-beam evaporation. Annealed lithium cobalt oxide, which was deposited on to stainless steel substrate, showed well-developed (003) planes of the hexagonal structure and potential plateau at $\~3.9 V$. Lithium cobalt oxide thin films had the stoichiometric Li/co ratio at high deposition rates and exhibited high discharge capacity at $15{\AA}/s$. As the annealing temperature increased, discharge capacity increased with maximum value at $700^{\circ}C$, but showed low capacity as a result of reaction with substrate above $700^{\circ}C$. Unuiformity of the lithium and cobalt in the depth profile gave initial capacity loss with charge/discharge performance.

• Journal of the Korean Electrochemical Society
• /
• v.3 no.3
• /
• pp.141-145
• /
• 2000

Anodically Polymerized conducting Polypyrrole film electrode was employed to Pick up uranyl ion with the type of Gr/ppy, xylenol orange modified electrode. To have Porous and oriented ppy film, NBR was applied as precoating agent. The rate constant of polymerization was $3.22\times10^{-3}s^{-1}$ which was 1.6 times smaller value than bare graphite surface. The deposited amount of uranyl iou on $1.70Ccm^{-2}$ of ppy was $1.55\times10^{-4}g$. The matrix effect in artificial seawater was $6.8\%$. The polymer film electrode has a diffusion controlled process in conduction, but the modified Gr/ppy, $X.O^{4-}UO^+$ type was influenced on the ion doping and electronic conduction of film itself owing to increasing of impedance. The capacitance of electrical double layer was respectively enhanced to 56 and 130 times in Gr/ppy, $X.O.^{4-}$ and Gr/ppy, $X.O^{4-}UO^+$ than Grippy type electrode.

• Journal of IKEEE
• /
• v.24 no.1
• /
• pp.59-66
• /
• 2020

In this study, the characteristics of ITO thin film was investigated to finding a low cost and highly transparent electrodes for display of mobile communication devices. The ITO film was deposited by DC magnetron sputter. The experimental conditions were changed as follows: 1. ambient pressure changed 1 to 3 mTorr with 1mTorr step, 2. bias electric voltage changed with 10V step. The chamber was pumped out by rotary pump until 10^-3Torr then the diffusion pump was used to lower the pressure of 10^-6Torr. The results shows us the film growth was obvious when the bias voltage was larger than 300V, but the overall thickness tendency was existed: the more voltage is the thicker thickness. At 330V bias voltage condition, the deposition rate was the largest and apparent grain was showed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.1
• /
• pp.44-48
• /
• 2013

Niobium oxide($Nb_2O_5$) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of $1.5{\mu}s$. From the thickness of the sputtered $NbO_x$ films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the $NbO_x$ films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the $NbO_x$ films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.26 no.11
• /
• pp.816-820
• /
• 2013

We investigated the characteristics of the silicon oxy-nitride and nitride films grown by plasma-enhanced chemical vapor deposition (PECVD) at the low temperature with a varying $NH_3/N_2O$ mixing ratio and a fixed $SiH_4$ flow rate. The deposition temperature was held at $150^{\circ}C$ which was the temperature compatible with the plastic substrate. The composition and bonding structure of the nitride films were investigated using Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Nitrogen richness was confirmed with increasing optical band gap and increasing dielectric constant with the higher $NH_3$ fraction. The leakage current density of the nitride films with a high NH3 fraction decreased from $8{\times}10^{-9}$ to $9{\times}10^{-11}(A/cm^2$ at 1.5 MV/cm). This results showed that the films had improved electrical properties and could be acceptable as a gate insulator for thin film transistors by deposited with variable $NH_3/N_2O$ mixing ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.24 no.4
• /
• pp.303-308
• /
• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.14 no.1
• /
• pp.40-47
• /
• 2014

In this paper, $Al_2O_3$ film deposited by thermal atomic layer deposition (ALD) with diluted $NH_4OH$ instead of $H_2O$ was suggested for passivation layer and anti-reflection (AR) coating of the p-type crystalline Si (c-Si) solar cell application. It was confirmed that the deposition rate and refractive index of $Al_2O_3$ film was proportional to the $NH_4OH$ concentration. $Al_2O_3$ film deposited with 5 % $NH_4OH$ has the greatest negative fixed oxide charge density ($Q_f$), which can be explained by aluminum vacancies ($V_{Al}$) or oxygen interstitials ($O_i$) under O-rich condition. $Al_2O_3$ film deposited with $NH_4OH$ 5 % condition also shows lower interface trap density ($D_{it}$) distribution than those of other conditions. At $NH_4OH$ 5 % condition, moreover, $Al_2O_3$ film shows the highest excess carrier lifetime (${\tau}_{PCD}$) and the lowest surface recombination velocity ($S_{eff}$), which are linked with its passivation properties. The proposed $Al_2O_3$ film deposited with diluted $NH_4OH$ is very promising for passivation layer and AR coating of the p-type c-Si solar cell.

• Journal of the Korean Vacuum Society
• /
• v.6 no.3
• /
• pp.213-219
• /
• 1997

The plasma polymerized styrene films were prepared by using an inter-electrode capacitively coupled gas-flow-type reactor, and the effects of plasma polymerization condition on the molecular weight distribution were investigated by Fourier Transform Infrared (FT-IR), Pyrolysis Gas Chromatography(PyGC), Differential Scanning Calorimetry(DSC) and Gel Permeation Chromatography(GPC). From the above results, the very cross-linked films different from chemical characteristics of the starting monomer were taken out, and it is realized that the molecular structure, cross linking density, and molecular weight distribution could be controlled by changing the parameters such as deposition pressure, deposition power and gas flow rate. Accordingly, it is suggested that plasma polymerization method performed by inter-electrode capacitively coupled gas-flow-type reactor has good characteristics for manufacturing the functional organic thin films which can be applied in sensors, opto-electric device, photo-resist by changing the polymerization parameters.