• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.193-193
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• 2012

In thin film silicon solar cells, p-i-n structure is adopted instead of p/n junction structure as in wafer-based Si solar cells. PECVD is the most widely used thin film deposition process for a-Si:H or ${\mu}c$-Si:H solar cells. Single-chamber PECVD system for a-Si:H solar cell manufacturing has the advantage of lower initial investment and maintenance cost for the equipment. However, in single-chamber PECVD system, doped and intrinsic layers are deposited in one plasma chamber, which inevitably impedes sharp dopant profiles at the interfaces due to the contamination from previous deposition process. The cross-contamination between layers is a serious drawback of single-chamber PECVD system. In this study, a new plasma process to solve the cross-contamination problem in a single-chamber PECVD system was suggested. In order to remove the deposited B inside of the plasma chamber during p-layer deposition, a high RF power was applied right after p-layer deposition with SiH4 gas off, which is then followed by i-layer, n-layer, and Ag top-electrode deposition without vacuum break. In addition to the p-i interface control, various interface control techniques such as FTO-glass pre-annealing in O2 environment to further reduce sheet resistance of FTO-glass, thin layer of TiO2 deposition to prevent H2 plasma reduction of FTO layer, and hydrogen plasma treatment prior to n-layer deposition, etc. were developed. The best initial solar cell efficiency using single-chamber PECVD system of 10.5% for test cell area of 0.2 $cm^2$ could be achieved by adopting various interface control methods.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.05a
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• pp.139-145
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• 2005

In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

• Advances in nano research
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• v.15 no.1
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• pp.49-57
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• 2023

As composite materials are used in many applications, the modern world looks forward to significant progress. An overview of the application of composite fiber materials in sports equipment is provided in this article, focusing primarily on the advantages of these materials when applied to sports equipment, as well as an Analysis of the influence of sports equipment of fiber-reinforced composite material on social sports development. The present study investigated surface morphology and physical and mechanical properties of S-glass fiber epoxy composites containing Al₂O₃ nanofillers (for example, 1 wt%, 2 wt%, 3 wt%, 4 wt%). A mechanical stirrer and ultrasonication combined the Al₂O₃ nanofiller with the matrix in varying amounts. A compression molding method was used to produce sheet composites. A first physical observation is well done, which confirms that nanoparticles are deposited on the fiber, and adhesive bonds are formed. Al₂O₃ nanofiller crystalline structure was investigated by X-ray diffraction, and its surface morphology was examined by scanning electron microscope (SEM). In the experimental test, nanofiller content was added at a rate of 1, 2, and 3% by weight, which caused a gradual decrease in void fraction by 2.851, 2.533, and 1.724%, respectively, an increase from 2.7%. The atomic bonding mechanism shows molecular bonding between nanoparticles and fibers. At temperatures between 60 ℃ and 380 ℃, Thermogravimetric Analysis (TGA) analysis shows that NPs deposition improves the thermal properties of the fibers and causes negligible weight reduction (percentage). Thermal stability of the composites was therefore presented up to 380 ℃. The Fourier Transform Infrared Spectrometer (FTIR) spectrum confirms that nanoparticles have been deposited successfully on the fiber.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.1
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• pp.30-37
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• 2005

We present an air bridge type electrode system with tunable electrode distance for detecting electroactive biomolecules. It is known that the narrower gap between electrode fingers, the higher sensitivity in IDA (interdigitated array) electrode. In previous researches on IDA electrode, narrower patterning required much precise and expensive equipment as the gap goes down to nanometer scale. In this paper, an improved method is suggested to replace nano gap pattering with downsizing electrode distance and showed that the patterning can be replaced by thickness control using metal deposition methods, such as electroplating or metal sputtering. The air bridge type electrode was completed by the following procedures: gold patterning for lower electrode, copper electroplating, gold deposition for upper electrode, photoresist patterning for gold film support, and copper etching for space formation. The thickness of copper electroplating is the distance between upper and lower electrodes. Because the growth rate of electroplating is $0.5{\mu}m\;min^{-1}$, the distance is tunable up to hundreds of nanometers. Completed electrodes on the same wafer had $5{\mu}m$ electrode distance. The gaps between fingers are 10, 20, 30, and $40{\mu}m$ and the widths of fingers are 10, 20, 30, 40, and $50{\mu}m$. The air bridge type electrode system showed better sensitivity than planar electrode.

• Journal of the Korean Society for Precision Engineering
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• v.33 no.1
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• pp.77-83
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• 2016

Intricate deflection requires many conventional actuators (motors, pistons etc.), which can be financially and spatially wasteful. Novel smart soft composite (SSC) actuators have been suggested, but fabrication complexity restricts their widespread use as general-purpose actuators. In this study, a hybrid manufacturing process comprising 3-D printing and casting was developed for automated fabrication of SSC actuators with $200{\mu}m$ precision, using a 3-D printer (3DISON, ROKIT), a simple polymer mixer, and a compressor controller. A method to improve precision is suggested, and the design compensates for deposition and backlash errors (maximum, $170{\mu}m$). A suitable flow rate and tool path are suggested for the polymer casting process. The equipment and process costs proposed here are lower than those of existing 3D printers for a multi-material deposition system and the technique has $200{\mu}m$ precision, which is suitable for fabrication of SSC actuators.

• Journal of the Korean Society for Heat Treatment
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• v.14 no.5
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• pp.292-296
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• 2001

In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.8
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• pp.701-706
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• 2006

In addition to its similarity to genuine diamond film, diamond-like carbon (DLC) film has many advantages, including its wide band gap and variable refractive index. In this study, DLC films were prepared by the RF PECVD (Plasma Enhanced Chemical Vapor Deposition) method on silicon substrates using methane $(CH_4)$ and hydrogen $(H_2)$ gas. We examined the effects of the post annealing temperature on the structural variation of the DLC films. The films were annealed at temperatures ranging from 300 to $900^{\circ}C$ in steps of $200^{\circ}C$ using RTA equipment in nitrogen ambient. The thickness of the film and interface between film and substrate were observed by surface profiler, field emission scanning electron microscopy (FESEM), high resolution transmission electron microscopy (HRTEM), respectively. Raman and X-ray photoelectron spectroscopy (XPS) analysis showed that DLC films were graphitized ($I_D/I_G$, G-peak position and $sp^2/sp^3$ increased) ratio at higher annealing temperature. The variation of surface as a function of annealing treatment was verified by a AFM and contact angle method.

• Journal of the Semiconductor & Display Technology
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• v.16 no.1
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• pp.1-5
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• 2017

Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

• Journal of Ocean Engineering and Technology
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• v.21 no.1 s.74
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• pp.59-63
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• 2007

The thin film of indium tin oxide (ITO) was prepared using the inclination opposite target type DC magnetron sputtering equipment onto the glass substrate at room temperature, using oxidized ITO with In2O3 and SnO2in a weight ratio of 9:1. The elastic modulus and hardness of the ITO thin films, prepared at different deposition conditions, were determined through anano-indentation experiment. The work pressure was varied from $2.6{\times}10-1\;to\;8.3{\times}10-1Pa$. The results show that the variation of work pressure during film deposition could vary significantly, according to the elastic modulus and hardness of the ITO thin films. It also can be seen that a minimum value exists in the film resistivity for the ITO thin films, prepared according to the variation of work pressure. However, the ITO film produced at room temperature had a microstructure in which a X ray diffraction peak is not clear, regardless of the work pressure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.137-140
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• 2014

With the recent advent of through silicon via (TSV) technology, wafer level-TSV interconnection become feasible in high volume manufacturing. To increase the manufacturing productivity, it is required to develop equipment for backside passivation layer deposition for TSV wafer bonding process with high deposition rate and low film stress. In this research, we investigated the relationship between process parameters and the induced wafer stress of PECVD silicon nitride film on 300 mm wafers employing statistical and artificial intelligence modeling. We found that the film stress increases with increased RF power, but the pressure has inversely proportional to the stress. It is also observed that no significant stress change is observed when the gas flow rate is low.