• 한국재료학회지
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• 제19권6호
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• pp.319-324
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• 2009

The deposition behavior and structural and magnetic properties of electroless Co-B and Co-Fe-B deposits, as well as the amorphous ribbon substrates, were investigated. These Co-based alloy deposits exhibited characteristic polycrystalline structures and surface morphology and magnetic properties that were dependent on the type of amorphous substrates. The catalytic activity sequence of the amorphous ribbon electrodes for anodic oxidation of DMAB was estimated from the current density-potential curve in the anodic partial electrolytic bath that did not contain the metal ions. Both the deposition rate and potential in the initial region were obtained in order of the catalytic activity, depending on the alloy compositions of the substrates. The deposition rate linearly varied against the deposition time. The initial deposition potential may have also determined the structural and magnetic properties of the deposit based on the thickness of ${\mu}m$ order. Furthermore, a basic study of the electroless deposition processes on an amorphous ribbon substrate has been carried out in connection with the structural and magnetic properties of the deposits.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2016년도 춘계학술논문요약집
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• pp.45-46
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• 2016

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2009년도 춘계학술대회 논문집
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• pp.355-356
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• 2009

• Asian Journal of Atmospheric Environment
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• 제7권1호
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• pp.8-16
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• 2013

The fog water chemistry and deposition in northern Japan were investigated by fog water and throughfall measurements in 2010. Fog water was sampled weekly by an active-string fog sampler at Lake Mashu from May to November. Throughfall measurements were conducted using rain gauges under three deciduous trees along the somma of the lake from August to October. The mean fog deposition rate (flux) was calculated using throughfall data to estimate the total fog water deposition amount for the entire sampling period. $NH_4{^+}$ and $SO{_4}^{2-}$ were the most abundant cation and anion, respectively, in the fog water samples. A mean pH of 5.08 in the fog water, which is higher than those in rural areas in Japan, was observed. The [$NH_4{^+}$]/[$SO{_4}^{2-}$] equivalent ratio in fog water was larger than 1.0 throughout the study period, indicating that $NH_3$ gas was the primary neutralizing agent for fog water acidity. The mean rate and total amount of fog water deposition were estimated as 0.15 mm $h^{-1}$ and 164 mm, respectively. The amounts of nitrogen and sulfate deposition via fog water deposition were corresponded to those reported values of the annual deposition amounts via rainfall.

• 한국재료학회지
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• 제20권5호
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• pp.257-261
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• 2010

A non-volatile resistive random access memory (RRAM) device with a Cr-doped $SrZrO_3/SrRuO_3$ bottom electrode heterostructure was fabricated on $SrTiO_3$ substrates using pulsed laser deposition. During the deposition process, the substrate temperature was $650^{\circ}C$ and the variable ambient oxygen pressure had a range of 50-250 mTorr. The sensitive dependences of the film structure on the processing oxygen pressure are important in controlling the bistable resistive switching of the Cr-doped $SrZrO_3$ film. Therefore, oxygen pressure plays a crucial role in determining electrical properties and film growth characteristics such as various microstructural defects and crystallization. Inside, the microstructure and crystallinity of the Cr-doped $SrZrO_3$ film by oxygen pressure were strong effects on the set, reset switching voltage of the Cr-doped $SrZrO_3$. The bistable switching is related to the defects and controls their number and structure. Therefore, the relation of defects generated and resistive switching behavior by oxygen pressure change will be discussed. We found that deposition conditions and ambient oxygen pressure highly affect the switching behavior. It is suggested that the interface between the top electrode and Cr-doped $SrZrO_3$ perovskite plays an important role in the resistive switching behavior. From I-V characteristics, a typical ON state resistance of $100-200\;{\Omega}$ and a typical OFF state resistance of $1-2\;k{\Omega}$, were observed. These transition metal-doped perovskite thin films can be used for memory device applications due to their high ON/OFF ratio, simple device structure, and non-volatility.

• 열처리공학회지
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• 제28권1호
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• pp.7-16
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• 2015

The fabrication of high quality graphene using chemical vapor deposition (CVD) method for application in semiconductor, display and transparent electrodes is investigated. Temperature and pressure have major impact on the growth of graphene. Graphene doping was obtained by deposition of $MoO_3$ thin films using thermal evaporator. Bilayer graphene and the metal layer graphene were obtained. According to the behavior of graphene growth P-type doping was confirmed. Graphene obtained through experiments was analyzed using optical microscopy, Raman spectroscopy, UV-visible light spectrophotometer, 4-point probe sheet resistance meter and atomic force microscopy.

• 대한기계학회논문집B
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• 제33권10호
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• pp.789-796
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• 2009

Microdroplet deposition in a micro-groove is studied numerically. The droplet shape is determined by a level-set method which is improved by incorporating a sharp-interface modeling technique for accurately enforcing the matching conditions at the liquid-gas interface and the no-slip and contact angle conditions at an immersed solid surface. The computations are carried out to investigate the droplet behavior derived by the interfacial characteristics between the liquid-gas-solid phases. The effects of contact angle, impact velocity and groove geometry on droplet deposition in a micro-groove are quantified.

• 한국진공학회지
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• 제7권4호
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• pp.314-319
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• 1998

반응성 스퍼터링 방법을 사용해서 SKD 61강 기판상에 TiN박막을 제조하였으며, 다 양한 증착조건의 변수에 따른 박막의 증착거동 및 제조된 박막의 물성을 평가하였다. 챔버 내의 가스압력 및 RF인가전압이 높을수록 증착속도는 급격하게 증가하였다. 반면에 혼합가 스의 질소함량이 높을수록 증착속도는 감소하였으며, 박막의 표면에 hillock이 발생하였다. 대표적인 증착조건으로 제조된 TiN박막의 경우(111) 우선배향성을 보였으며, 비교적 순수한 TiN의 화학양론비를 충족하는 박막임을 알 수 있었다.

• 동굴
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• 제76호
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• pp.15-17
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• 2006

[ $YBa_2Cu_3O_{7-{\delta}}$ ] superconductor films have been prepared on silver substrates by electrophoretic deposition. As silver does not react with $YBa_2Cu_3O_{7-{\delta}}$ compound and has little influence on its superconductivity, it is usually doped in $YBa_2Cu_3O_7$ to improve the strength of the material and eliminate micro cracks. It has been proved that Ag additive can lower the melting temperature of $YBa_2Cu_3O_{7-{\delta}}$ and act as linking bridge among $YBa_2Cu_3O_{7-{\delta}}$ particles, thus in this paper Ag doped $YBa_2Cu_3O_{7-{\delta}}$ thick films are prepared by electrophoretic co deposition. As there are only some referenced experience formula and models for co electrophoretic deposition and does not exist unified explanation, the behavior of Ag particles during co electrophoretic deposition is also studied.

• 한국진공학회지
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• 제5권4호
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• pp.354-358
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• 1996

precuror alternating metalorganic chemical vapor deposition(PAMOCVD)에 의한 InGaAs의 성장시에 높은 indium의 유입이 관찰되었다. gallium과 indium의 전구물질의 분해의 차이 그리고 이에따른 분해된 전구물질 분자의 흡착행동의 차이를 고려함으로써 PAMOCVD 성장시의 결정내로의 높은 indium유입의 mechanism을 제안하였다.