• Nuclear Engineering and Technology
• /
• 제35권2호
• /
• pp.171-177
• /
• 2003

A dynamic compartment model was required for the prediction of radiological consequences of the tritiated vapor released from the nuclear facility after an accident. A computer code, ECOREA-T, was developed by incorporating the unit models for the evaluation of tritium behavior in the environment. Dry deposition of tritiated vapor from the atmosphere to the soil was calculated using a deposition velocity. Transport of tritium from the atmosphere to the plant was calculated using a specific activity model, and the result was compared with the Belot's analytic solution. Root uptake of tritiated water from the soil and formation of OBT from T were considered in the model. The ECOREA-T code was verified by comparing the results from the other computer codes using a scenario developed through BIOMOVS II study. The results showed good agreements.

• 한국표면공학회지
• /
• 제55권5호
• /
• pp.299-307
• /
• 2022

Gold plating is used as a coating of connector in printed circuit boards, ceramic integrated circuit packages, semiconductor devices and so on, because the film has excellent electric conductivity, solderability and chemical properties such as durability to acid and other chemicals. In most cases, internal connection between device and package and external terminals for connecting packaging and printed circuit board are electroless Ni-P plating followed by immersion Au plating (ENIG) to ensure connection reliability. The deposition behavior and film properties of electroless Au plating are affected by P content, grain size and mixed impurity components in the electroless Ni-P alloy film used as the underlayer plating. In this study, the correlation between electroless nickel plating used as a underlayer layer and cyanide-free electroless Au plating using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated.

• 한국표면공학회지
• /
• 제55권4호
• /
• pp.202-214
• /
• 2022

Internal connections between device, package and external terminals for connecting packaging and printed circuit board are normally manufactured by electroless Ni-P plating followed by immersion Au plating (ENIG process) to ensure the connection reliability. In this study, a new non-cyanide-based immersion and electroless Au plating solutions using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated on different underlayer electroless Ni-P plating layers. As a result, it was confirmed that the deposition behavior and film properties of electroless Au plating are affected by grain size and impurity of the electroless Ni-P film, which is used as the plating underlayer. Au plating on the electroless Ni-P plating film with a dense surface structure showed the highest bonding strength. In addition, the electroless Au plating film on the Ni-P plating film has a smaller particle size exhibited higher bonding strength than that on the large particle size.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.280.2-280.2
• /
• 2016

The graphene, a single atomic sheet of graphite, has attracted tremendous interest owing to its novel properties including high intrinsic mobility, optical transparency and flexibility. However, for more diverse application of graphene devices, it is essential to tune its transport behavior by shifting Dirac Point (DP) of graphene. So, in the following context, we suggest a method to tune structural and electronic properties of graphene using atomic layer deposition. By atomic layer deposition of zinc oxide (ZnO) on graphene using 4-mercaptophenol as linker, we can fabricate n-doped graphene. Through ${\pi}-{\pi}$ stacking between chemically inert graphene and 4-mercaptophenol, conformal deposition of ZnO on graphene was enabled. The electron mobility of graphene TFT increased more than 3 times without considerably decreasing the hole mobility, compared to the pristine graphene. Also, it has high air stability. This ZnO doping method by atomic layer deposition can be applicable to large scale array of CVD graphene TFT.

• 한국결정성장학회지
• /
• 제29권6호
• /
• pp.308-316
• /
• 2019

전자빔 물리기상증착기술(EBPVD)은 주상형 성장거동과 같이 고온에서의 구조 안정성에 기여할 수 있는 특성으로 인해 터빈블레이드 등과 같은 항공기 엔진 고온부품의 열차폐 코팅(TBC) 제조기술로 개발되어 상용화된 기술이다. 전자빔 증착으로 열·기계적 특성이 상용화 가능한 수준에 만족하는 고품질 열차폐 코팅제조를 위해서는 성장거동, 균일두께형성 등과 같은 구조적 요소의 제어가 반드시 수반되어야 한다. 본 연구에서는 실품형상에 근사한 터빈 블레이드 mock-up에 대한 기하학적 코팅인자 조건에 따른 7YSZ(7 wt% 이트리아 안정화 지르코니아) 열차폐 코팅의 성장거동과 구조변화를 고찰하였으며, 전산모사 기법을 활용한 기하학적 코팅인자 조건에 따른 코팅성장거동 모델링을 수행하여 실제 코팅결과와 비교하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
• /
• pp.960-964
• /
• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• 한국재료학회지
• /
• 제33권11호
• /
• pp.491-496
• /
• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• 한국세라믹학회:학술대회논문집
• /
• 한국세라믹학회 2000년도 추계총회,초청강연,특별강연,연구발표회
• /
• pp.185.2-185
• /
• 2000

• 한국표면공학회지
• /
• 제23권2호
• /
• pp.18-23
• /
• 1990

Thin films of tin oxide were prepared by chemical vapor deposition (C.V>D) using the hydrolysis reaction of SnCl4, Deposition rate increased with the increase of temperature up to $500^{\circ}C$and then decreased at $700^{\circ}C$, Deposition rate with SnCl4 partial pressure showed RidealEley behavir. It was found that SnO2 thin film deposited at the temperature above $400^{\circ}C$ had(110) and (301) plane preferred orientation with crystallinity of rutite structure. Electrical resisvity of SnO2 thin film decreased with increase increase of deposition temperature and showed minimum value of 10-3 ohm at $500^{\circ}C$and than largely increased increased with further increase of deposition temperture.

• 대한환경공학회지
• /
• 제28권7호
• /
• pp.713-720
• /
• 2006

일본 관동지역을 대상으로 PCBs의 대기 중 거동을 해석하기 위해 단일 구획상자모델을 사용하였으며, 대기 중 기온과 PCBs의 각 동족체의 거동사이의 관계를 시뮬레이션하였다. 또한 모델을 이용하여 대상 지역에 있어서의 PCBs의 년간 배출량과 침적량을 추산하였으며, 년간 배출량은 3,320 kg, 년간 침적량은 1,480 kg으로 예측되었다. 대기 중 PCBs의 제거기작(이류, 건성-습성 침적 및 반응) 중 이류의 기여는 전체의 약 $20{\sim}38%$로 나타났으며, OH라디칼 반응에 의한 감소는 무시할 정도로 작았다. 본 연구에서 사용한 단일 구획상자모델이 대기 중 PCBs의 거동을 이해하는데 활용될 수 있을 것으로 생각된다.