• 대한금속재료학회지
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• 제47권10호
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• pp.681-685
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• 2009

$CeO_2$ buffer layers have been deposited on YSZ single crystal substrates via a radio-frequency sputtering method. We focused on the texture development of $CeO_2$ with out-of-plane alignment and its effects on a superconducting YBCO layer, which was deposited by metal organic deposition. $CeO_2$ layers were grown epitaxially on single crystal YSZ substrates and subsequent YBCO layers were also grown epitaxially from $CeO_2$ layers. It was observed that the intensity of $CeO_2$(200) decreased with deposition temperature. ${\theta}-2{\theta}$ scan FWHM values of $CeO_2$(200) were inversely proportional to the peak intensities of $CeO_2$(200). The sample with the lowest $CeO_2$(200) intensity and poor out-of-plane alignment showed a strong reaction with the MOD-YBCO layer resulting in a thicker $BaCeO_3$ layer. The texture and superconducting property of the YBCO layer were affected indirectly by the formation of a $BaCeO_3$ layer at the interface between the $CeO_2$ and YBCO layers.

• 한국재료학회지
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• 제33권11호
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• pp.475-481
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• 2023

Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO₂ applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 ℃. PSC using ALD SnO₂ as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO₂ showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO₂ layer was 0.75 mA/cm² higher than that of the spin coated SnO₂. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO₂. Therefore ALD SnO₂ is a candidate as a ETL for use in PSC vacuum deposition.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.173-177
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• 2008

We have developed the transparent passivation layer for top emission organic light emitting diodes using CsCl thin film by the thermal evaporation method. The CsCl film was deposited on the Ca/Ag semitransparent cathode. The optical transmittance of Ca/ Ag/CsCl triple layer is higher than that of Ca/Ag double layer in the visible range. The device with a structure of glass/Ni/2-TNATA/a-NPD/Alq3:C545T/BCP/Alq3/Ca/Ag/CsCl results in higher efficiency than the device without CsCl passivation layer. The device without CsCl thin film shows a current efficiency of 7 cd/A, whereas the device passivated with CsCl layer shows an efficiency of 10 cd/A. This increase of efficiency isresulted from the increased optical extraction by the CsCl passivation layer.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.979-983
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• 2012

We proposed the ZnO thin film for a SAW filter by PLD and RF sputtering method. ZnO thin films was pre-deposited on a sapphire substrate as a seed layer by PLD method and then deposited on seed layer by RF sputtering. The surface characteristics of ZnO thin film were investigated by XRD, SEM and AFM. The minimum surface roughness was 1.92 nm and FWHM of rocking curve was $0.92^{\circ}$. We demonstrated the SAW filter with bandwidth of approximately 0.97 MHz and the center frequency of 18.72 MHz using the proposed ZnO thin film.

• 한국진공학회지
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• 제6권S1호
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• pp.16-22
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• 1997

ion beam processing of materials for medical application has gained increasing interest in the last decade and the implantation of nitrogen into TI-6AI-4V to improve corrosive-wear performance is currently used for processing of total hip and knee joints. Oxides and nitrides of Ti, Zr, Al, Cr were deposited on TI-6AI-4V substrates by DC magnetron sputtering dual ion beam sputtering and ion beam assisted deposition. The cytotoxicity of these films were investigated by MTT method and showed comparable to untreated TI-6AI-4V Plasm-sprayed hydroxyapatite(HAp) coatings showed excellent cytotoxicity regardless of heat treatment. intermediate layer coatings of nitrides and oxides increased the bond strength of HAp to substrate by intrdducing chemical bond at interface. Heat treatment of HAp coatings also improved the chemical bond at interfaces and increased the bond strength of untreated TI-6AI-4V to 16.4 kg/$\textrm{cm}^2$ but still lower than 33.1 kg./$\textrm{cm}^2$ of ir oxide as a imtermediate layer caoting.

• Journal of Electrical Engineering and Technology
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• 제2권4호
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• pp.532-536
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• 2007

Carbon nanotube (CNT) properties, produced using a magnetic null discharge (MND) plasma production technology, were investigated. We firstly deposited the Fe layer 200 nm in thickness on Si substrate by the magnetic null discharge sputter method at the substrate temperature of $300도C$, and then prepared CNTs on the catalyst layer by using the magnetic null discharge (MND) based CVD method. CNTs were deposited in a gas mixture of CH4 and N2 at a total pressure of 1 Torr by the MND-CVD method. The substrate temperature and the RF power were $650^{\circ}C$ and 600W, respectively. The characterization data indicated that the proposed source could synthesize CNTs even under relatively severe conditions for the magnetic null discharge formation.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.169-171
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• 2009

We have fabricated CIGS thin film absorber layers by the evaporation of CIGS powders which were synthesized by solutions with different atomic ratio compositions. We found that the polycrystalline structural properties and optical properties of the deposited CIGS thin films were strongly dependent on the CIGS powder synthesis solution compositions. For three different solution compositions, Cu:In:Ga:Se= 4:3:1:8, 8:3:1:8, 12:3:1,8, the deposited thin film crystalline structures were varied form InSe crystalline structure to CIGS chalcopyrite structures. Our results showed that CIGS powder evaporation is potential for the one step fabrication process for CIGS thin film absorber layer deposition.

• Transactions on Electrical and Electronic Materials
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• 제4권4호
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• pp.1-6
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• 2003

Aluminum oxide ($Al_2O_3$) nanotubes and nanorods were fabricated by coating and filling of multiwalled carbon nanotubes (MWNTs) with atomic-layer deposition (ALD). $Al_2O_3$ material was deposited on the MWNTs at a substrate temperature of $300^{\circ}C$ using trimethylaluminum and distilled water. Transmission electron microscopy, high resolution transmission electron microscopy, energy-dispersive X-ray spectroscopy, and selected area electron diffraction of the deposited MWNTs revealed that amorphous $Al_2O_3$ material coats the MWNTs conformally and that this material fills the inside of the MWNTs. These illustrate that ALD has an excellent capability to coat and fill any three-dimensional shapes of MWNTs conformally without producing any crystallites.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.966-969
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• 2003

Thin film capacitors with Al-Polymer-Al sandwich structure were fabricated. The bottom and top aluminium (Al) electrodes were deposited by vacuum evaporation and copper phthalocyanine (CuPc), polyaniline-emeraldine base (Pani-EB) and cobalt phthalocyanine/polyaniline - emeraldine base (CoPc /Pani-EB) blend films (which can be used as buffer hole injection layer in OLEDs) were deposited by spin coating technique. X-ray diffractograms indicated amorphous nature of the polymer films whose thicknesses were measured by capacitance and Rutherford Backscattering Spectrometry (RBS) methods. AC conduction studies revealed that the conduction mechanism responsible in these films is variable range hopping of polarons. From D.C conduction studies, it is observed that, the nature of conduction is ohmic in the lower fields and at higher fields the dominating D.C conduction is of Poole-Frenkel type.

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.177-182
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• 2010

The pentacene-based organic thin film transistors(OTFTs) using polyvinylalcohol(PVA) alignment layer were fabricated on the $SiO_2$ evaporated to n-type (111) Si substrates. The pentacene film was deposited by thermally evaporated at $10^{-7}$ torr. X-ray diffraction (XRD) and atomic force microscope(AFM) measurement showed pentacene film which deposited on rubbed PVA layers were partially crystallized at (001) plane. The pentacene OTFTs with PVA layers rubbed perpendicular to the direction of current flow was shown to align better orientation than parallel rubbed case and thus to enhance the mobility and saturation current by a factor of 2.3 respectively. We obtained mobility by 0.026 $cm^2$/Vs and on-off current ratio by ${\sim}10^8$.