• 한국분말재료학회지
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• 제11권5호
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• pp.376-382
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• 2004

Nanoscale Cu-Ni alloy nanopowders have been produced by a pulsed wire evaporation method in an inert gas. The effect of Cu-Ni alloy nanopowders as additives to motor oil on the tribological properties was studied at room temperature. The worn surfaces were characterized by Scanning Electron Microscopy (SEM) and Energy-Dispersive X-ray Spectroscopy (EDS). Cu-Ni alloy nanopowders as additives lowered coefficient of friction and wear rate. It was found that a copper containing layer on the worn surface was formed, and deposited layers of the metal cladding acted as lubricant on the worn surface, reducing the friction coefficient. It was clearly demonstrated that Cu-Ni alloy nanopowders as additives are able to restore the worn surface and to preserve the friction surfaces from wear.

• ETRI Journal
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• 제34권2호
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• pp.226-234
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• 2012

The novelty of this study resides in the fabrication of stoichiometric and stress-reduced $Si_3N_4/SiO_2/Si_3N_4$ triple-layer membrane sieves. The membrane sieves were designed to be very flat and thin, mechanically stress-reduced, and stable in their electrical and chemical properties. All insulating materials are deposited stoichiometrically by a low-pressure chemical vapor deposition system. The membranes with a thickness of 0.4 ${\mu}m$ have pores with a diameter of about 1 ${\mu}m$. The device is fabricated on a 6" silicon wafer with the semiconductor processes. We utilized the membrane sieves for plasma separations from human whole blood. To enhance the separation ability of blood plasma, an agarose gel matrix was attached to the membrane sieves. We could separate about 1 ${\mu}L$ of blood plasma from 5 ${\mu}L$ of human whole blood. Our device can be used in the cell-based biosensors or analysis systems in analytical chemistry.

• 조명전기설비학회논문지
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• 제24권5호
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• pp.1-7
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• 2010

광원으로써 다양한 장점을 가지고 있는 LED 소자는 응용 분야의 확대가 빠르게 진행되고 있다. 특히 조명 분야의 LED 응용은 더욱 활발하다. 본 논문에서는 비교적 낮은 광량이 요구되는 옥내 외 문자표시용 광원, 양면 발광형 광원, 저휘도 LED BLU 분야에 적합하도록 투명 Plate와 LED 칩을 조합하여 광원을 구현하였다. 투명광원 구현을 위해 폴리카보네이트 계열의 plate 사용하였으며 LED 칩의 구동을 위한 구리회로를 plate 표면에 형성하였다. 또한 기존 패키지를 사용하던 LED 광원 대신 투명 plate 표면에 LED 칩을 직접 장착하는 기술을 적용하였다. 최종 제품은 다수개의 광원 모듈을 결합하여 BLU또는 면광원에 적합한 샘플을 제작하였다.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.613-616
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• 2001

공 부활제로 KCI, Cl, S 및 P를 각각 첨가한 발광충을 전자 빔 방법에 의해 성장시킨 2중 절연구조의 SrS:Ce electroluminescent(EL) device를 제작하여, 공 부활제가 EL device의 휘도에 미치는 영향을 조사였다. 휘도 및 발광파장은 첨가되는 공 부활제 및 농도에 의하여 상당한 영향을 받고 있음을 알았다. 어느 공 부활제에서나 전체 휘도는 0.2 mol%에서 최고를 나타냈으며, CeCl$_3$+KCL를 첨가한 소자가 최고 850cd/$m^2$를 나타내었다. 또한 CeP를 첨가한 소자의 경우 전체 휘도는 낮았으나 청색 휘도의 비율은 가장 높았으며, 이 비율은 농도의 상승에 따라 증가했다.

• 한국전기전자재료학회논문지
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• 제27권2호
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• pp.81-84
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• 2014

The bipolar resistive switching characteristics of resistive random access memory (ReRAM) based on $HfO_2$ thin films have been demonstrated by using Ag/$HfO_2$/Pt structured ReRAM device. MIcrowave irradiation (MWI) treatment at low temperature was employed in device fabrication with $HfO_2$ thin films as a transition layer. Compared to the as-deposited Ag/$HfO_2$/Pt device, highly improved uniformity characteristics of resistance values and operating voltages were obtained from the MWI treatment Ag/$HfO_2$/Pt ReRAM device. In addition, a stable DC endurance (> 100 cycles) and a high data retention (> $10^4$ sec) were achieved.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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• pp.38-39
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• 2006

We present experimental results that regard the effects of catalyst preparation on the structural and field-emissive properties of CNTs. The CNTs used in this research have been synthesized using the inductively coupled plasma-chemical vapor deposition (ICP-CVD) method. Catalyst materials (such as Ni, Co, and Invar 426) are varied and deposited on buffer films by RF magnetron sputtering. Prior to growth of CNTs, $NH_3$ plasma etching has also been performed with varying plasma etching time and power. For all the CNTs grown, nanostructures and morphologies are analyzed using Raman spectroscopy and FESEM, in terms of buffer films, catalyst materials, and pre-treatment conditions. Furthermore, the field electron-emission of CNTs are measured and characterized in terms of the catalyst preparation environments. The CNTs grown on Nicatalyst layer would be more effectual for enhancing the growth rate and achieving the vertical-alignment of CNTs rather than other buffer materials from results of SEM study. The crystalline graphitic structure of CNTs is improved as the catalyst dot reaches a critical size. Also, the field-emission result shows that the CNTs using Ni catalyst would be more favorable for improving electron-emission capabilities of CNTs compared with other samples.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권4호
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• pp.176-179
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• 2005

The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

• Transactions on Electrical and Electronic Materials
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• 제7권6호
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• pp.293-296
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• 2006

We studied homeotropic alignment effect for a nematic liquid crystal (NLC) on the $SiO_{x}$ thin film irradiated by the new ion beam method. $SiO_{x}$ thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) and were treated by the DuoPIGatron ion source. A uniform liquid crystal alignment effect was achieved over 2100 eV ion beam energy. Tilt angle were about $90^{\circ}$ and were not affected by various ion beam energy.

• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2003년도 추계학술대회 논문집
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• pp.150-152
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• 2003

YBa$_2$Cu$_3$O$_{7-{\delta}}$(YBCO) coated conductors were deposited by pulsed laser deposition (PLD) on short buffered substrate in continuous PLD reel-to-reel system. The oxide multilayer buffered substrate of architectures of CeO$_2$/YSZ/Y$_2$O$_3$was fabricated by PLD at steady status. The degree of texture of each layer was investigated using X-ray diffraction including $\theta$-2$\theta$ scans, $\omega$-scans and $\Phi$-scans analysis. Their surface morphology was observed by scanning electron microscopy (SEM) The FWHM of the X-ray $\omega$-scans and $\Phi$-scans indicated that YBCO and buffer layers closely replicate the in-plane and out-of-plane texture of metal tape. Critical current at 77K self-field of 19A, critical temperature of 86K, and current density of 2MA/$\textrm{cm}^2$ were measured. The film also exhibits a homogeneous and dense surface morphology.e morphology.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.169-173
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• 2011

In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.