• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.458-458
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• 2010

The process window for the etch selectivity of silicon nitride ($Si_3N_4$) layers to extreme ultra-violet (EUV) resist and variation of line edge roughness (LER) of EUV resist were investigated durin getching of $Si_3N_4$/EUV resist structure in a dual-frequency superimposed capacitive coupled plasma (DFS-CCP) etcher by varying the process parameters, such as the $CH_2F_2$ and $N_2$ gas flow rate in $CH_2F_2/N_2$/Ar plasma. The $CH_2F_2$ and $N_2$ flow rate was found to play a critical role in determining the process window for infinite etch selectivity of $Si_3N_4$/EUV resist, due to disproportionate changes in the degree of polymerization on $Si_3N_4$ and EUV resist surfaces. The preferential chemical reaction between hydrogen and carbon in the hydrofluorocarbon ($CH_xF_y$) polymer layer and the nitrogen and oxygen on the $Si_3N_4$, presumably leading to the formation of HCN, CO, and $CO_2$ etch by-products, results in a smaller steady-state hydrofluorocarbon thickness on $Si_3N_4$ and, in turn, in continuous $Si_3N_4$ etching due to enhanced $SiF_4$ formation, while the $CH_xF_y$ layer is deposited on the EUV resist surface. Also critical dimension (and line edge roughness) tend to decrease with increasing $N_2$ flow rate due to decreased degree of polymerization.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.317.2-317.2
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• 2013

Ultrathin oxide encapsulated metal-oxide hybrid nanocatalysts have been fabricated by a soft chemical and facile route. First, SiO2 nanoparticles of 25~30 nm size have been synthesized by modified Stobber's method followed by amine functionalization. Metal nanoparticles (Ru, Rh, Pt) capped with polymer/citrate have been deposited on functionalized SiO2 and finally an ultrathin layer of TiO2 coated on surface which prevents sintering and provides high thermal stability while maximizing the metal-oxide interface for higher catalytic activity. TEM studies confirmed that 2.5 nm sized metal nanoparticles are well dispersed and distributed throughout the surface of 25 nm SiO2 nanoparticles with a 3-4 nm TiO2 ultrathin layer. The metal nanoparticles are still well exposed to outer surface, being enabled for surface characterization and catalytic activity. Even after calcination at $600^{\circ}C$, the structure and morphology of hybrid nanocatalysts remain intact confirm the high thermal stability. XPS spectra of hybrid nanocatalyst suggest the metallic states as well as their corresponding oxide states. The catalytic activity has been evaluated for high temperature CO oxidation reaction as well as photocatalytic H2 generation under solar simulation. The design of hybrid structure, high thermal stability, and better exposure of metal active sites are the key parameters for the high catalytic activity. The maximization of metal-TiO2 interface interaction has the great role in photocatalytic H2 production.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.214.2-214.2
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• 2013

Device performance for the 45 and 32 nm node CMOS technology requires the integration of ultralow-k materials. To lower the dielectric constant for PECVD and spin-on materials, partial replacement of the solid network with air (k=1.01) appears to be more intuitive and direct option. This can be achieved introducting of second "labile" phase during depositoin that is removed during a subsequent UV curing and annealing step. Besides, with shrinking line dimensions the resistivity of barrier films cannot meet the International Technology Roadmap for Semiconductors (ITRS) requirements. To solve this issue self-forming diffusion barriers have drawn attention for great potential technique in meeting all ITRS requirments. In this present work, we report a Cu-V alloy as a materials for the self-forming barrier process. And we investigated diffusion barrier properties of self-formed layer on low-k dielectrics with or without UV curing treatment. Cu alloy films were directly deposited onto low-k dielectrics by co-sputtering, followed by annealing at various temperatures. X-ray diffraction revealed Cu (111), Cu (200) and Cu (220) peaks for both of Cu alloys. The self-formed layers were investigated by transmission electron microscopy. In order to compare barrier properties between V-based interlayer on low-k dielectric with UV curing and interlayer on low-k dielectric without UV curing, thermal stability was measured with various heat treatment temperature. X-ray photoelectron spectroscopy analysis showed that chemical compositions of self-formed layer. The compositions of the V based self-formed barriers after annealing were strongly dominated by the O concentration in the dielectric layers.

• 한국재료학회지
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• 제25권3호
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• pp.125-131
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• 2015

Fluorine-doped $SnO_2$ (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of $300^{\circ}C$, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (${\sim}14.9{\Omega}/{\Box}$), high optical transmittance (~88.6 %), the best FOM (${\sim}19.9{\times}10^{-3}{\Omega}^{-1}$), and excellent thermal stability at an annealing temperature of $300^{\circ}C$ owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

• 한국표면공학회지
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• 제51권4호
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• pp.197-201
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• 2018

Dynamic nano-indentation method was applied to characterize thin electroformed Ni-P layers. The Ni-P layers were produced in a sulphamic acid bath at $50^{\circ}C$ in $0.02A/cm^2$ for 10-60 minutes. The chemical analyses by XRD and EDX showed that the Ni-P layers were very fine grains with mainly $Ni_3P$ with Ni. The surface roughness determined by atomic force microscopy increased with thickness, which was relative to the surface morphology. The nano-hardness and the stiffness of the thin Ni-P layers with thickness of 1.9, 6.2 and $7.5{\mu}m$ were 5.52, 6.52 and 6.77 [GPa] and 56.7, 76.2 and 108.0 [${\mu}N/nm$], respectively. The elastic modulus of the Ni-P layer increased with thickness such as 37.29, 54.50 and 78.76 [GPa], respectively. The surface roughness of the electroplated Ni-P layers with diverse thickness was 8.66, 18.56 and 35.22 [nm], respectively. The enhanced nano-mechanical properties were related to mainly residual stress of the Ni-P layers.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.166-166
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• 2010

Recently, TFTs based on amorphous oxide semiconductors (AOSs) such as ZnO, InZnO, ZnSnO, GaZnO, TiOx, InGaZnO(IGZO), SnGaZnO, etc. have been attracting a grate deal of attention as potential alternatives to existing TFT technology to meet emerging technological demands where Si-based or organic electronics cannot provide a solution. Since, in 2003, Masuda et al. and Nomura et al. have reported on transparent TFTs using ZnO and IGZO as active layers, respectively, much efforts have been devoted to develop oxide TFTs using aforementioned amorphous oxide semiconductors as their active layers. In this thesis, I report on the performance of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer at room temperature. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium gallium zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium gallium zinc oxide was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 1.5V and an on/off ration of > $10^9$ operated as an n-type enhancement mode with saturation mobility with $9.06\;cm^2/V{\cdot}s$. The devices show optical transmittance above 80% in the visible range. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium gallium zinc oxides for an active channel layer were reported. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• 대한금속재료학회지
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• 제50권3호
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• pp.206-211
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• 2012

Graphene has recently received high attention as a promising material for various applications, and many related studies have been undertaken to reveal its basic mechanical properties. However, the tribological properties of graphene film fabricated by the chemical vapor deposition (CVD) method are barely known. In this study, the contact angle and frictional wear characteristics of graphene coated copper film were investigated under room temperature, normal air pressure, and no lubrication condition. The contact angle was measured by sessile drop method and the wear test was carried out under normal loads of 660 mN and 2940 mN, respectively. The tribological behaviors of a graphene coating layer were also examined. Compared to heat treated bare copper foil, the graphene coated one shows a higher contact angle and lower friction coefficient.

• Electronic Materials Letters
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• 제14권6호
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• pp.700-711
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• 2018

CdS synthesized by the chemical bath method at $70^{\circ}C$, has been used as an electron transport layer in the planar structure of the perovskite solar cells. A two-step spin process produced a mixed halide perovskite of $CH_3NH_3PbI_{3-x}Cl_x$ and a mixture of $PbCl_2$ and $PbI_2$ was deposited on CdS, followed by a sub-sequential reaction with MAI ($CH_3NH_3I$). The added $PbCl_2$ to $PbI_2$ in the first spin-step affected the structure, orientation, and shape of lead halides, which varied depending on the content of Cl. A small amount of Cl enhanced the surface morphology and the preferred orientation of $PbI_2$, which led to large and uniform grains of perovskite thin films. In contrast, the high content of Cl produces a new phase PbICl in addition to $PbI_2$, which leads to the small and highly uniform grains of perovskites. An improved surface coverage of perovskite films with the large and uniform grains maximized the performance of perovskite solar cells at 0.1 molar ratio of $PbCl_2$ to $PbI_2$. The depth profiling of elements in both lead halide films and mixed halide perovskite films were measured by Rutherford backscattering spectroscopy, revealing the distribution of chlorine along with the thickness, and providing the basis for the mechanism for enhanced preferred orientation of lead halide and the microstructure of perovskites.

• 한국표면공학회지
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• 제54권6호
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• pp.365-370
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• 2021

In this research, we proceeded with research on plasma resistance of the cleaning process of APS(Atmospheric Plasma Spray)-Y₂O₃ coated parts used for semiconductor and display plasma process equipment. CF₄, O₂, and Ar mixed gas were used for the plasma environment, and respective alconox, surfactant, and piranha solution was used for the cleaning process. After APS-Y₂O₃ was exposed to CF₄ plasma, the surface changed from Y₂O₃ to YF₃ and a large amount of carbon was deposited. For this reason, the plasma corrosion resistance was lowered and contamination particles were generated. We performed a cleaning process to remove the defect-inducing surface YF₃ layer and carbon layer. Among three cleaning solutions, the piranha cleaning process had the highest detergency and the alconox cleaning process had the lowest detergency. Such results could be confirmed through the etching amount, morphology, composition, and accumulated contamination particle analysis results. Piranha cleaning process showed the highest detergency, but due to the very large thickness reduction, the base metal was exposed and a large number of contaminated particles were generated. In contrast, the surfactant cleaning process exhibit excellent properties in terms of surface detergency, etching amount, and accumulated contamination particle analysis.

• Nuclear Engineering and Technology
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• 제53권8호
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• pp.2629-2639
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• 2021

Within the frame of the EMPIrE test, four monolithic mini-plates were irradiated in the ATR reactor. In two of them, the monolithic U(Mo) foil had been PVD-coated with Zr before the plate manufacturing. Extensive microstructural characterizations were performed on a fresh archive mini-plate, using Optical Microscopy (OM), Scanning Electron Microscopy (SEM) combined with Energy Dispersive Spectroscopy (EDS), Electron Backscattered Diffraction (EBSD) and Focused Ion Beam (FIB)/Transmission Electron Microscopy (TEM) with nano EDS. A particular attention was paid to the examination of the U(Mo) foil, the PVD coating, the cladding/Zr and Zr/U(Mo) interfaces. The Zr coating has a thickness around 15 ㎛. It has a columnar microstructure and appears dense. The cohesion of the cladding/Zr and Zr/U(Mo) interfaces seems to be satisfactory. An almost continuous layer with a thickness of the order of 100-300 nm is present at the cladding/Zr interface and corresponds to an oxidized part of the Zr coating. At the Zr/U(Mo) interface, a thin discontinuous layer is observed. It could correspond to locally oxidized U(Mo). This work provides a basis for interpreting the results of characterizations on EMPIrE irradiated plates.