• Membrane Journal
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• v.33 no.1
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• pp.13-22
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• 2023

Despite high capacity of lithium metal anode, its uncontrollable dendrite growth results in the poor electrochemical (EC) performance (low Coulomb efficiency and limited cycle stability) and unsafe operation. In this study, we demonstrated a lithium metal anode protected with BaTiO₃/PVDF based piezoelectric layer to enhance its EC performance by utilizing the locally polarized lithium metal after volume expansions. As-formed lithium metal electrode deposited with BTO@PVDF layer exhibited an enhanced Coulombic efficiency (> 98% for 100 cycles) and facilitated lithium ion diffusions (lithium diffusion coefficient: D_Li+), revealing the effectiveness of piezoelectric layer deposited lithium metal electrode approach.

• Transactions of the Korean Society of Pressure Vessels and Piping
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• v.19 no.2
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• pp.109-116
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• 2023

This study presents a CRUD modelling to simulate the thermal resistance behavior of CRUD, deposited on the surface of a cladding tube of a fuel assembly. When heat produced from fuels transfers to a coolant through a cladding tube, the CRUD acting as an additional thermal resistance is expressed as two layers, i.e., a solid oxide layer and an imaginary fluid layer, which are added to the experimental tube's heat structure of the MARS-KS input data. The validation calculation for the experiments performed in UNIST-DISNY facility showed that the center and surface temperatures of the cladding tube increased as the porosity and the steam amount inside pores of the CRUD got higher. In addition, the temperature gradient in the imaginary fluid layer was calculated to be larger than that in the solid oxide part, indicating that the steam amount inside the layer acted more largely as thermal resistance. It was also evaluated through sensitivity calculations that the cladding tube temperature was more sensitive to the CRUD porosity and the steam amount in pores than to the inlet flow rate of the coolant.

• Korean Journal of Materials Research
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• v.16 no.4
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• pp.225-230
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• 2006

Nanoimprint lithography (NIL) is a novel method of fabricating nanometer scale patterns. It is a simple process with low cost, high throughput and resolution. NIL creates patterns by mechanical deformation of an imprint resist and physical contact process. The imprint resist is typically a monomer or polymer formulation that is cured by heat or UV light during the imprinting process. Stiction between the resist and the stamp is resulted from this physical contact process. Stiction issue is more important in the stamps including narrow pattern size and wide area. Therefore, the antistiction layer coating is very effective to prevent this problem and ensure successful NIL. In this paper, an antistiction layer was deposited and characterized by PECVD (plasma enhanced chemical vapor deposition) method for metal stamps. Deposition rates of an antistiction layer on Si and Ni substrates were in proportion to deposited time and 3.4 nm/min and 2.5 nm/min, respectively. A 50 nm thick antistiction layer showed 90% relative transmittance at 365 nm wavelength. Contact angle result showed good hydrophobicity over 105 degree. $CF_2$ and $CF_3$ peaks were founded in ATR-FTIR analysis. The thicknesses and the contact angle of a 50 nm thick antistiction film were slightly changed during chemical resistance test using acetone and sulfuric acid. To evaluate the deposited antistiction layer, a 50 nm thick film was coated on a stainless steel stamp made by wet etching process. A PMMA substrate was successfully imprinting without pattern degradations by the stainless steel stamp with an antistiction layer. The test result shows that antistiction layer coating is very effective for NIL.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.229-229
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• 2010

With the scaling down of ultra large integrated circuits (ULSI) to the sub-50 nm technology node, the need for an ultra-thin, continuous and conformal diffusion barrier and Cu seed layer is increasing. However, diffusion barrier and Cu seed layer formation with a physical vapor deposition (PVD) method has become difficult as the technology node is reduced to 30 nm and beyond. Recent work on self-forming barrier processes using PVD Cu alloys have attracted great attention due to the capability of conformal ultra-thin barrier formation using a simple technique. However, as in the case of the conventional barrier and Cu seed layer, PVD of the Cu alloy seed layer will eventually encounter the difficulty in conformal deposition in narrow line trenches and via holes. Atomic layer deposition (ALD) has been known for its good step coverage and precise thickness control, and is a candidate technique for the formation of a thin conformal barrier layer and Cu seed layer. Conformal Cu-Mn seed layers were deposited by plasma enhanced atomic layer deposition (PEALD) at low temperature ($120^{\circ}C$), and the Mn content in the Cu-Mn alloys were controlled form 0 to approximately 10 atomic percent with various Mn precursor feeding times. Resistivity of the Cu-Mn alloy films decreased by annealing due to out-diffusion of Mn atoms. Out-diffused Mn atoms were segregated to the surface of the film and interface between a Cu-Mn alloy and $SiO_2$, resulting in self-formed $MnO_x$ and $MnSi_xO_y$, respectively. No inter-diffusion was observed between Cu and $SiO_2$ after annealing at $500^{\circ}C$ for 12 h, indicating an excellent diffusion barrier property of the $MnSi_xO_y$. The adhesion between Cu and $SiO_2$ was enhanced by the formation of $MnSi_xO_y$. Continuous and conductive Cu-Mn seed layers were deposited with PEALD into 32 nm $SiO_2$ trench, enabling a low temperature process, and the trench was perfectly filled using electrochemical plating (ECD) under conventional conditions. Thus, it is the resultant self-forming barrier process with PEALD Cu-Mn alloy film as a seed layer for plating Cu that has further potential to meet the requirement of the smaller than 30 nm node.

• 한국석유지질학회:학술대회논문집
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• spring
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• pp.29-37
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• 1998

The sedimentary succession on the northern coast of Jindo and the adjacent area comprises the thinly bedded, fine-grained deposits of an epiclastic sandstone, siltstone, black shale/mudstone, and cherty mudstone (ca. 200m in vertical thickness), which are interpreted as the finely stratified turbidites mainly by density underflow-induced currents. Most deposits can be divided into eight facies: thin-bedded, ash-rich massive sandstone layer (mS), graded and laminated mudstone layer (glM), graded mudstone layer with ripple lamination (rM), laminated and graded siltstone layer (lgZ), finely laminated black shale layer (IBS), structureless mudstone layer (mM), thin-bedded cherty mudstone layer (lCM), and contorted and laminated mudstone layer (dlM), The thin-bedded, ash-rich sandstone facies is interpreted to be deposited from high-density turbid underflows during a relatively large flooding. Most thinly bedded mudstone facies would be deposited from low-density turbid underflows (turbidity currents) with some different hydrodynamic condition and sediment concentration during the high discharge of river water. Whereas the structureless mudstone facies may result from raining down of suspended sediment intermittently supplied by overflows and interflows. From the entire succession, graded and laminated mudstone layers interbedded with thin-bedded, ash-rich massive sandstone are dominant in the lower part of the succession, and graded mudstone layers with ripple lamination ripple lamination occur mainly in the middle part of it. On the other hand, iaminated/raded siltstone and contorted/laminated mudstone layers prevail in the upper part. The transition of facies association is suggestive of the continuous change of main depositional setting from basin plain to lower slope, which could be due to the movement of depocenter by the increase of sediment supply (volcanic activity).

• Journal of the Korean Magnetics Society
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• v.12 no.4
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• pp.132-136
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• 2002

Enhancement of crystallinity and exchange bias characteristics for NiFe/FeMn/NiFe trilayer with Si buffer layer fabricated by ion-beam deposition were examined. A Si buffer layer promoted (111) texture of fcc crystallities in the initial growth region of NiFe layer deposited on it. FeMn layers deposited on Si/NiFe bilayer exhibited excellent (111) crystal texture. The antiferromagnetic FeMn layer between top and bottom NiFe films with the buffer Si 50 ${\AA}$-thick induced a large exchange coupling field Hex with a different dependence. It was found that H$\sub$ex/ of the bottom and top NiFe films with Si buffer layer revealed large value of about 110 Oe and 300 Oe, respectively. In the comparison of two Ta and Si buffer layers, the NiFe/FeMn/NiFe trilayer with Si could possess larger exchange coupling field and higher crystallinity.

• Korean Journal of Materials Research
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• v.21 no.10
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• pp.550-555
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• 2011

A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.101-106
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• 2009

In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.807-811
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• 2003

We investigated the electrical characterisitics of T $a_2$ $O_{5}$ (tantalum pentoxide) film and Ti-O/T $a_2$ $O_{5}$ film deposited on $Al_2$ $O_3$based substrate. Ta (tantalum) electrode and $Al_2$ $O_3$ substrate was used for the purpose of simplifying the manufacturing process in IPD's (integrated passive devices). Dielectric materials (T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ films) deposited on Ta/Ti/A $l_2$ $O_3$ were annealed at 700 $^{\circ}C$ for 60 sec. in vacuum. The XRD results showed that as-deposited T $a_2$ $O_{5}$ film possessed amorphous structure, which was transformed to crystallines by rapid thermal heat treatment. We compared the lnJ- $E^{{\frac}{1}{2}}$, C-V, C-F of both as-deposited and annealed dielectric thin films deposited on Ta bottom electrode. From this results, we concluded that the leakage current could be reduced by introducing Ti-O buffer layer and conduction mechanisms of T $a_2$ $O_{5}$ and Ti-O/T $a_2$ $O_{5}$ could be interpreted appropriately by Schottky emission effect.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1330-1332
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• 1998

Polycrystalline diamond films are deposited on a Si substrate by employing a 2.45 GHz $\mu$-wave plasma CVD system. Prior to depositing the diamond film, a DPR(diamond photo-resist) layer is coated to enhance the nucleation density. The growth rate of diamond films increases with the $\mu$-wave power and approaches to be about $1.5{\mu}m/hr$ at 1100 W. Structural properties of diamond films deposited are characterized from their SEM photographs, Raman spectra, and AFM surface images. Lager grain size, higher intensity of diamond peak, and smoother surface are observed for films deposited at a higher power. The possible mechanism on the diamond growth is also discussed to explain the experimental results.