• Title/Summary/Keyword: deposited layer

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Study on the Structural Stability and Charge Trapping Properties of High-k HfO2 and HFO2/Al2O3/HfO2 Stacks (High-k HfO2와 HfO2/Al2O3/HfO2 적층막의 구조 안정성 및 전하 트랩핑 특성 연구)

  • Ahn, Young-Soo;Huh, Min-Young;Kang, Hae-Yoon;Sohn, Hyunchul
    • Korean Journal of Metals and Materials
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    • v.48 no.3
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    • pp.256-261
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    • 2010
  • In this work, high-k dielectric stacks of $HfO_2$ and $HfO_2$/$Al_2O_3$/$HfO_2$ (HAH) were deposited on $SiO_2/Si$ substrates by atomic layer deposition as charge trapping layers in charge trapping devices. The structural stability and the charge trapping characteristics of such stacks were investigated using Metal-Alumina-Hafnia-Oxide-Silicon (MAHOS) structure. The surface roughness of $HfO_2$ was stable up to 11 nm with the insertion of 0.2 nm thick $Al_2O_3$. The effect of the thickness of the HAH stack and the thickness of intermediate $Al_2O_3$ on charge trapping characteristics were investigated for MAHOS structure under various gate bias pulse with duration of 100 ms. The threshold voltage shift after programming and erase showed that the memory window was increased with increasing bias on gate. However, the programming window was independent of the thickness of HAH charge trapping layers. When the thickness of $Al_2O_3$insertion increased from 0.2 nm to 1 nm, the erase window was decreased without change in the programming window.

A Study on CFD Result Analysis of Mist-CVD using Artificial Intelligence Method (인공지능기법을 이용한 초음파분무화학기상증착의 유동해석 결과분석에 관한 연구)

  • Joohwan Ha;Seokyoon Shin;Junyoung Kim;Changwoo Byun
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.1
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    • pp.134-138
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    • 2023
  • This study focuses on the analysis of the results of computational fluid dynamics simulations of mist-chemical vapor deposition for the growth of an epitaxial wafer in power semiconductor technology using artificial intelligence techniques. The conventional approach of predicting the uniformity of the deposited layer using computational fluid dynamics and design of experimental takes considerable time. To overcome this, artificial intelligence method, which is widely used for optimization, automation, and prediction in various fields, was utilized to analyze the computational fluid dynamics simulation results. The computational fluid dynamics simulation results were analyzed using a supervised deep neural network model for regression analysis. The predicted results were evaluated quantitatively using Euclidean distance calculations. And the Bayesian optimization was used to derive the optimal condition, which results obtained through deep neural network training showed a discrepancy of approximately 4% when compared to the results obtained through computational fluid dynamics analysis. resulted in an increase of 146.2% compared to the previous computational fluid dynamics simulation results. These results are expected to have practical applications in various fields.

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Study of Al Doping Effect on HfO2 Dielectric Thin Film Using PEALD (PEALD를 이용한 HfO2 유전박막의 Al 도핑 효과 연구)

  • Min Jung Oh;Ji Na Song;Seul Gi Kang;Bo Joong Kim;Chang-Bun Yoon
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.36 no.2
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    • pp.125-128
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    • 2023
  • Recently, as the process of the MOS device becomes more detailed, and the degree of integration thereof increases, many problems such as leakage current due to an increase in electron tunneling due to the thickness of SiO2 used as a gate oxide have occurred. In order to overcome the limitation of SiO2, many studies have been conducted on HfO2 that has a thermodynamic stability with silicon during processing, has a higher dielectric constant than SiO2, and has an appropriate band gap. In this study, HfO2, which is attracting attention in various fields, was doped with Al and the change in properties according to its concentration was studied. Al-doped HfO2 thin film was deposited using Plasma Enhanced Atomic Layer Deposition (PEALD), and the structural and electrical characteristics of the fabricated MIM device were evaluated. The results of this study are expected to make an essential cornerstone in the future field of next-generation semiconductor device materials.

Interaction study of molten uranium with multilayer SiC/Y2O3 and Mo/Y2O3 coated graphite

  • S.K. Sharma;M.T. Saify;Sanjib Majumdar;Palash K. Mollick
    • Nuclear Engineering and Technology
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    • v.55 no.5
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    • pp.1855-1862
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    • 2023
  • Graphite crucibles are used for melting uranium and its alloys in VIM furnace. Various coating materials namely Al2O3, ZrO2, MgO etc. are applied on the inner surface of the crucibles using paint brush or thermal spray technique to mitigate U-C interaction. These leads to significant amount of carbon pick-up in uranium. In this study, the attempts are made to develop multilayer coatings comprising of SiC/Y2O3 and Mo/Y2O3 on graphite to study the feasibility of minimizing U-C interaction. The parameters are optimized to prepare SiC coating of about 70㎛ thickness using CVD technique on graphite coupons and subsequently Y2O3 coating of about 250㎛ thickness using plasma spray technique. Molybdenum and Y2O3 layers were deposited using plasma spray technique with 70㎛ and 250㎛ thickness, respectively. Interaction studies of the coated graphite with molten uranium at 1450℃ for 20 min revealed that Y2O3 coating with SiC interlayer provides physical barrier for uranium-graphite interaction, however, this led to the physical separation of coating layer. Y2O3 coating with Mo interlayer provided superior barrier effect showing no degradation and the coatings remained intact after interaction tests. Therefore, the Mo/Y2O3 coating was found to be a promising solution for minimizing carbon pick-up during uranium/uranium alloy melting.

A study of characteristics of cumulative deposition of fallout Pu in environmental samples

  • Lee, Myung Ho;Song, Byoung Chul;Jee, Kwang Yong;Park, Yeong Jae;Kim, Won Ho
    • Analytical Science and Technology
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    • v.19 no.1
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    • pp.18-30
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    • 2006
  • This paper describes the cumulative deposition of fallout Pu in soil and lichen at the present time and give the characteristics of fallout Pu deposits in the soil. In the soil of the forest, the accumulated depositions of $^{239,240}Pu$ were estimated to be in the range of 34.0 to $101.2Bq\;m^{-2}$ with an average value of $65.3{\pm}21.6Bq\;m^{-2}$. The average inventory of $^{239,240}Pu$ in the forest was calculated to be two times higher than that in the hill. Also, the deposited activities of $^{239,240}Pu$ in cultivated soil were significantly lower than those in the hill or forest. However, the cumulative depositions of fallout Pu in the volcanic ash soil on Cheju Island were much higher than those in the forest and hill soils. The measured activity concentrations of Pu isotopes in lichens and mosses showed large variations, due to characteristics of species and life span of lichen and moss colonies. From depth profiles, it was found that most of the fallout Pu has been accumulated in upper 10 cm layer of soil. Except for a few cases, the concentrations of $^{239,240}Pu$ in soil tended to decrease exponentially with increasing soil depth. Among parameters affecting the cumulative deposition of fallout Pu, organic substances and rainfall play an important role in the retention and relative mobility of fallout Pu in the soil. However, pH showed a weak correlation with the deposition of fallout Pu in the soil. From sequential leaching experiments, Pu was found to be associated predominantly with the "organic" and "oxy-hydroxy" fractions. Both the activity ratios of $^{238}Pu/^{239,240}Pu$ and $^{241}Pu/^{239,240}Pu$ in soils, lichens and mosses and the atomic ratios of $^{240}Pu/^{239}Pu$ in soils are close to those observed in the cumulative deposit global fallout from nuclear weapon testings. The results obtained from this research make it possible to interpret and predict the behavior of fallout Pu under natural conditions.

Holocene Sea Level Reflected from Marine Terrace in Geoje Island and its Influences on Coastal Morphogenesis (거제도 동부해안에서 파악되는 홀로세 고해수준면과 지형발달과정)

  • YANG, Jae-Hyuk
    • Journal of The Geomorphological Association of Korea
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    • v.18 no.1
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    • pp.101-112
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    • 2011
  • Coastal terrace was developed at 7.2m height near Shinchon village in Geoje Island. It is located on the east side of southern coast in Korean Peninsula, where sea-level changes caused by ebb and flow of the tide, embayment are relatively low. Due to the breccia layer by mass-movement, dark grayish clayey formation, marine origin's rounded gravel are deposited sequentially in a cross-section of coastal terrace, so it provides a good example which understand Holocene sea level changes to determine the effect on the various sedimentary environments. For the purpose of identifying the morphogenetic process, Grain size, Roundness, XRD, AMS dating analysis was attempted. As a result, after last glacial age, Holocene sea level rise to +5.6m(4,740±100yrs BP). At that time, various geomorphological features are considered to be formed.

TiO2 Thin Film Growth Research to Improve Photoelectrochemical Water Splitting Efficiency (TiO2 박막 성장에 의한 광전기화학 물분해 효율 변화)

  • Seong Gyu Kim;Yu Jin Jo;Sunhwa Jin;Dong Hyeok Seo;Woo-Byoung Kim
    • Korean Journal of Materials Research
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    • v.34 no.4
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    • pp.202-207
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    • 2024
  • In this study, we undertook detailed experiments to increase hydrogen production efficiency by optimizing the thickness of titanium dioxide (TiO2) thin films. TiO2 films were deposited on p-type silicon (Si) wafers using atomic layer deposition (ALD) technology. The main goal was to identify the optimal thickness of TiO2 film that would maximize hydrogen production efficiency while maintaining stable operating conditions. The photoelectrochemical (PEC) properties of the TiO2 films of different thicknesses were evaluated using open circuit potential (OCP) and linear sweep voltammetry (LSV) analysis. These techniques play a pivotal role in evaluating the electrochemical behavior and photoactivity of semiconductor materials in PEC systems. Our results showed photovoltage tended to improve with increasing thickness of TiO2 deposition. However, this improvement was observed to plateau and eventually decline when the thickness exceeded 1.5 nm, showing a correlation between charge transfer efficiency and tunneling. On the other hand, LSV analysis showed bare Si had the greatest efficiency, and that the deposition of TiO2 caused a positive change in the formation of photovoltage, but was not optimal. We show that oxide tunneling-capable TiO2 film thicknesses of 1~2 nm have the potential to improve the efficiency of PEC hydrogen production systems. This study not only reveals the complex relationship between film thickness and PEC performance, but also enabled greater efficiency and set a benchmark for future research aimed at developing sustainable hydrogen production technologies.

Development of Energy Harvesting Hybrid system consisted of Electrochromic Device and Dye-Sensitized Solar Cell using Nano Particle Deposition System (나노 입자 적층 시스템(NPDS)을 이용한 염료 감응 태양전지 - 전기 변색 통합 소자 및 에너지 하베스팅 시스템에 대한 연구)

  • Kim, Kwangmin;Kim, Hyungsub;Choi, Dahyun;Lee, Minji;Park, Yunchan;Chu, Wonshik;Chun, Dooman;Lee, Caroline Sunyong
    • Journal of the Microelectronics and Packaging Society
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    • v.23 no.2
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    • pp.65-71
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    • 2016
  • In this study, Antimony Tin Oxide (ATO) ion storage layer and $TiO_2$ working electrode were fabricated using Nano Particle Deposition System. NPDS is the cutting-edge technology among the dry deposition methods. Accelerated particles are deposited on the substrate through the nozzle using NPDS. The thicknesses for coated layers were measured and layer's morphology was acquired using SEM. The fabricated electrochromic cell's transmittance was measured using UV-Visible spectrometer and power source at 630 nm. As a result, the integrated electrochromic/DSSC hybrid system was successfully fabricated as an energy harvesting system. The fabricated electrochromic cell was self-operated using DSSC as a power source. In conclusion, the electrochromic cell was operated for 500 cycles, with 49% of maximum transmittance change. Also the photovoltaic efficiency for DSSC was measured to be 2.55% while the electrochromic cell on the integrated system had resulted in 26% of maximum transmittance change.

Characteristics of ZnO Nanorod/ZnO/Si(100) Grown by Hydrothermal Method (수열법으로 성장한 ZnO Nanorod/ZnO/Si(100)의 특성)

  • Jeong, Min-Ho;Jin, Yong-Sik;Choi, Sung-Min;Han, Duk-Dong;Choi, Dae-Kue
    • Korean Journal of Materials Research
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    • v.22 no.4
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    • pp.180-184
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    • 2012
  • Nanostructures of ZnO, such as nanowires, nanorods, nanorings, and nanobelts have been actively studied and applied in electronic or optical devices owing to the increased surface to volume ratio and quantum confinement that they provide. ZnO seed layer (about 40 nm thick) was deposited on Si(100) substrate by RF magnetron sputtering with power of 60 W for 5 min. ZnO nanorods were grown on ZnO seed layer/Si(100) substrate at $95^{\circ}C$ for 5 hr by hydrothermal method with concentrations of $Zn(NO_3)_2{\cdot}6H_2O$ [ZNH] and $(CH_2)_6N_4$ [HMT] precursors ranging from 0.02M to 0.1M. We observed the microstructure, crystal structure, and photoluminescence of the nanorods. The ZnO nanorods grew with hexahedron shape to the c-axis at (002), and increased their diameter and length with the increase of precursor concentration. In 0.06 M and 0.08 M precursors, the mean aspect ratio values of ZnO nanorods were 6.8 and 6.5; also, ZnO nanorods had good crystal quality. Near band edge emission (NBE) and a deep level emission (DLE) were observed in all ZnO nanorod samples. The highest peak of NBE and the lower DLE appeared in 0.06 M precursor; however, the highest peak of DLE and the lower peak of NBE appeared in the 0.02 M precursor. It is possible to explain these phenomena as results of the better crystal quality and homogeneous shape of the nanorods in the precursor solution of 0.06 M, and as resulting from the bed crystal quality and the formation of Zn vacancies in the nanorods due to the lack of $Zn^{++}$ in the 0.02 M precursor.

Development of LSM-Coated Crofer Mesh for Current Collectors in Solid Oxide Fuel Cells (LSM이 코팅된 고체산화물 연료전지용 Crofer Mesh 집전체 개발)

  • Baek, Joo-Yul;Park, Seok-Joo;Lee, Seung-Bok;Lee, Jong-Won;Lim, Tak-Hyoung;Song, Rak-Hyun;Kim, Kwang-Bum;Shin, Dong-Ryul
    • Journal of the Korean Electrochemical Society
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    • v.13 no.4
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    • pp.256-263
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    • 2010
  • A Crofer 22 APU mesh coated with a conductive ceramic material was developed as an alternative cathode current collector to Ag-based materials for solid oxide fuel cells. $(La_{0.80}Sr_{0.20})_{0.98}MnO_3$ (LSM) layer was deposited onto the Crofer mesh using a spray-coating technique, in an attempt to mitigate the degradation of electrical properties due to surface oxidation at high temperatures. The oxidation experiments at $800^{\circ}C$ in air indicated that the areaspecific resistance (ASR) of the LSM-coated Crofer mesh was strongly dependent on the wire diameter and the contact morphology between mesh and cell. In addition, the post-heat-treatment in $H_2/N_2$ resulted in a reduced thickness of Cr-containing oxide scales at the interface between Crofer mesh and LSM layer, leading to a decreased ASR.