• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.12
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• pp.1091-1098
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• 1998

Thermal stability of the electroless deposited Cu thin film was investigated. Cu/TaN/Si multilayer was fabricated by electroless-depositing Cu thin layer on TaN diffusion barrier layer which was deposited by MOCVD on the Si substrate, and was annealed in $H_2$ ambient to investigate the microstructure of Cu film with a post heat-treatment. Cu thin film with good adhesion was successfully deposited on the surface of the TaN film by electroless deposition with a proper activation treatment and solution control. Microstructural property of the electroless-deposited Cu layer was improved by a post-annealing in the reduced atmosphere of $H_2$ gas up to $600^{\circ}C$. Thermal stability of Cu/TaN/Si system was maintained up to $600^{\circ}C$ annealing temperature, but the intermediate compounds of Cu-Si were formed above $650^{\circ}C$ because Cu element passed through the TaN layer. On the other hand, thermal stability of the Cu/TaN/Si system in Ar ambient was maintained below $550^{\circ}C$ annealing temperature due to the minimal impurity of $O_2$ in Ar gas.

• Journal of Radiation Industry
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• v.4 no.4
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• pp.335-339
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• 2010

In this study, the surface of polyimide (PI) films was modified using ion implantation to enhance its adhesion to a deposited copper (Cu) layer. The surfaces of the PI films were implanted with 150 keV $Xe^+$ ions at fluences varying from $1{\times}10^{14}$ to $1{\time}10^{16}ions\;cm^{-2}$. The Cu layers were then deposited on the implanted PI. The surface properties of the implanted PI film were investigated based on the contact angle measurements, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Furthermore, the adhesive strength between the deposited Cu layer and PI film was estimated through a scratch test using a nanoindenter. As a result, the surface environment of the PI film was changed by the ion implantation, which could have a significant effect on the adhesion between the deposited Cu layer and the PI.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1395-1398
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• 2007

MgO thin films were deposited by e-beam evaporator using the 2-step method for alternate current plasma display panels (AC-PDPs). Glancing angle deposition (GLAD) method was employed to produce various surface geometry of the thin film; the bottom layer was deposited on a substrate by normal e-beam evaporation method and the top layer was deposited on bottom layer with $85^{\circ}$ by GLAD method. Results show that firing and sustain voltages improved as the sharpness of surface and isolated columnar structures increases, respectively.

• Journal of the Korean institute of surface engineering
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• v.35 no.6
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• pp.408-414
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• 2002

TiN and TiAlN coating layer were deposited on WC-Co steel substrates by an arc ion plating(AIP) technique. The crystallinity and morphology for the deposited coating layers were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The impact behaviors of the deposited TiN and TiAlN coating layer were investigated with a ball-on-plate impact tester. Beyond $10^2$ impact cycle, TiAlN coating layer showed superior impact wear resistance compared to TiN coating layer. On the other hand, both TiN and TiAlN coating layers started to be partially failed between $10^2$ and $10^3$ impact cycle. Above $10^3$ impact cycle, TiN and TiAlN coating layers showed similar impact behavior because of the substrate effect.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.6
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• pp.493-498
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• 2008

This Paper describes the Raman scattering characteristics of polycrystalline (Poly) 3C-SiC thin films, in which they were deposited on AlN buffer layer by APCVD using hexamethyldisilane (MHDS) and carrier gases (Ar+$H_2$). When the Raman spectra of SiC films deposited on the AlN layer of before and after annealing were worked according to growth temperature, D and G bands of graphite were measured. It can be explained that poly 3C-SiC films admixe with nanoparticle graphite and its C/Si rate is higher than ($C/Si\;{\approx}\;3$) that of the conventional SiC, which has no D and G bands related to graphite. From the Raman shifts of 3C-SiC films deposited at $1180^{\circ}C$ on the AlN layer of after annealing, the biaxial stress of poly 3C-SiC films was obtained as 896 MPa.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1651-1652
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• 2006

In this study, the 2-step methode by ALD equipment was used to improve the characteristics of ZnO thin films used in a piezoelectric layer when the FBAR devices of a SMR type are fabricated. The Height of formed buffer layer was $400{\AA}$ and ZnO thin film of $13600{\AA}$ was deposited by RF sputter on the buffer layer. When ZnO thin films are deposited, deposition conditions such as pressure, injection time of source and purge time were changed variously. The characteristics of piezoelectric layer such as a crystal orientation and micro-structure of deposited ZnO thin films were studied by SEM, AFM and XRD.

• Korean Journal of Materials Research
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• v.17 no.5
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• pp.263-267
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• 2007

Hafnium oxide $(HfO_2)$ films were deposited on Si(100) substrates by remote plasma-enhanced atomic layer deposition (PEALD) method at $250^{\circ}C$ using TEMAH [tetrakis(ethylmethylamino)hafnium] and $O_2$ plasma. $(HfO_2)$ films showed a relatively low carbon contamination of about 3 at %. As-deposited and annealed $(HfO_2)$ films showed amorphous and randomly oriented polycrystalline structure. respectively. The interfacial layer of $(HfO_2)$ films deposited using remote PEALD was Hf silicate and its thickness increased with increasing annealing temperature. The hysteresis of $(HfO_2)$ films became lower and the flat band voltages shifted towards the positive direction after annealing. Post-annealing process significantly changed the physical, chemical, and electrical properties of $(HfO_2)$ films. $(HfO_2)$ films deposited by remote PEALD using TEMAH and $O_2$ plasma showed generally improved film qualities compare to those of the films deposited by conventional ALD.

• Journal of Information Display
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• v.7 no.2
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• pp.1-5
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• 2006

The characteristics of MgO layer deposited under hydrogen atmosphere were investigated. Hydrogen gas was introduced during e-beam evaporation coating process of MgO layer and its effects on microstructure, cathode luminescence spectra, discharge voltages and effective yield of secondary electron emission were examined. The results indicated that the hydrogen influences the concentration and energy levels of defects in MgO layer, which in turn affects the luminance efficiency and discharge delays of the panels significantly.

• Journal of the Korean Chemical Society
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• v.14 no.3
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• pp.229-235
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• 1970

Electrodeposition of lead peroxide on the graphite core was studied. The results are following; 1) At more noble potential than 1.6V vs. S.C.E. and lower temperature than $40^{\circ}C$, $PbO_2$ deposited current efficiency is increased but deposited layer falls off easily from graphite core. 2) Oxygen overvoltage of $PbO_2$ deposited layer on the graphite core is largely with increasing $PbO_2$ depositing anodic potential and with lowlying electrolytic temperature. 3) To obtain the $PbO_2$ deposited layer without falling off from the graphite core, it is necessary to change the electrolytic conditions, anodic potential and electrolytic temperature, in four stages successively.

• Transactions on Electrical and Electronic Materials
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• v.14 no.5
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• pp.242-245
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• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.