Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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ZnO thin films used in the piezoelectric layer of FBAR devices were deposited by 2-step methods using ALD equipment

FBAR 소자의 압전층으로 사용되는 ZnO 박막의 증착시 ALD틀 이용한 2-step 법 적용에 관한 연구

  • Lee, Soon-Bum (Department of Electric and Electronics Engineering in Kyungwon University) ;
  • Park, Sung-Hyun (Department of Electric and Electronics Engineering in Kyungwon University) ;
  • Lee, Neung-Heon (Department of Electric and Electronics Engineering in Kyungwon University) ;
  • Shin, Young-Hwa (Department of Electric and Electronics Engineering in Kyungwon University)
  • 이순범 (경원대학교 전기전자공학과) ;
  • 박성현 (경원대학교 전기전자공학과) ;
  • 이능헌 (경원대학교 전기전자공학과) ;
  • 신영화 (경원대학교 전기전자공학과)
  • Published : 2006.07.12
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Abstract

In this study, the 2-step methode by ALD equipment was used to improve the characteristics of ZnO thin films used in a piezoelectric layer when the FBAR devices of a SMR type are fabricated. The Height of formed buffer layer was $400{\AA}$ and ZnO thin film of $13600{\AA}$ was deposited by RF sputter on the buffer layer. When ZnO thin films are deposited, deposition conditions such as pressure, injection time of source and purge time were changed variously. The characteristics of piezoelectric layer such as a crystal orientation and micro-structure of deposited ZnO thin films were studied by SEM, AFM and XRD.

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