• Transactions on Electrical and Electronic Materials
• /
• v.17 no.3
• /
• pp.129-133
• /
• 2016

Theoretical and graphical analysis of pull-in-voltage and figure of merit for a fixed-fixed capacitive Micro Electromechanical Systems (MEMS) switch is presented in this paper. MEMS switch consists of a thin electrode called bridge suspended over a central line and both ends of the bridge are fixed at the ground planes of a coplanar waveguide (CPW) structure. A thin layer of dielectric material is deposited between the bridge and centre conductor to avoid stiction and provide low impedance path between the electrodes. When an actuation voltage is applied between the electrodes, the metal bridge acquires pull in effect as it crosses one third of distance between them. In this study, we describe behavior of pull-in voltage and figure of merit (or capacitance ratio) of capacitive MEMS switch for five different dielectric materials. The effects of dielectric thicknesses are also considered to calculate the values of pull-in-voltage and capacitance ratio. This work shows that a reduced pull-in-voltage with increase in capacitance ratio can be achieved by using dielectric material of high dielectric constant above the central line of CPW.

• Transactions of the Korean hydrogen and new energy society
• /
• v.6 no.2
• /
• pp.65-73
• /
• 1995

Negative electrode was prepared by mixing $Ti_{0.7}Zr_{0.3}Cr_{0.3}Mn_{0.3}V_{0.6}Ni_{0.8}$ alloy powder with copper or nickel powder and pressing in the air. The cycled electrodes were analyzed with SEM, potentiostat and electrochemical impedance spectroscopy. It was found that the Cu-compacted electrode showed better low temperature dischargeability and higher rate capability than Ni-compacted electrode. From SEM analysis of the cycled electrode compacted with copper powder, it was observed that the surface of MH particles was covered with copper grains and whisker precipitated from electrolyte after dissolution during cell test. It is found that the improved electrode characteristics are attributed to the copper layer on MH particles deposited by dissolution and precipitation(DP) process.

• Advances in nano research
• /
• v.1 no.2
• /
• pp.93-103
• /
• 2013

An ultrasonic-mediated assisted stepwise method has been developed for depositing transparent ZnO films from aqueous solution. Rinsing in low ethylene glycol temperature was easy to produce intermediate phase of $Zn(OH)_2$, rinsing in $120^{\circ}C$ ethylene glycol was observed the diffraction peak of intermediate $Zn(OH)_2$ in early report, the rinsing temperature plays an important role in the process of $Zn(OH)_2$ phase transformed to ZnO, high rinsing temperature actually improved the intermediate phase. However, the effect of rinsing on the intermediate phase is yet to be understood clearly. The effect of different rinsing procedures, involving either of or a combination of successive ionic layer adsorption and reaction (SILAR) and ultrasonic-assisted rinsing, prior to hydrolysis in ethylene glycol was found to improve the occurrence $Zn(OH)_2$ in ZnO thin films. In the zinc complex ($[Zn(NH_3)_4]^{2+}$) solution, excess ($[Zn(NH_3)_4]^{2+}$) absorbed in glass substrate transformed incompletely to ZnO and exist as $Zn(OH)_2$ phase in thin films. In films deposited at low temperature, rinsing procedure is applied to improve excess $Zn(OH)_2$ and obtain smoother transparent thin films.

• Transactions of the Korean Society of Automotive Engineers
• /
• v.19 no.1
• /
• pp.101-108
• /
• 2011

Understanding the exhaust gas recirculation (EGR) cooler fouling in diesel engine is important factor in the durability characteristic of a EGR system. We develope a test rig and PM feeder using carbon black to examine the effect of fouling on EGR cooler devices those were consisted of flat and shell & tube type. The EGR cooler fouling process is a complex interaction involving heat exchanger shape, boundary condition, constitutes, chemistry and operating mode. As the soot deposited to EGR cooler, these formed a thin deposit layer that was less heat exchange than the fresh status of tube enclosing the exhaust gas, resulting in lower heat exchange effectiveness in both type coolers. But these deposits caused different results in pressure drop, it is increased in flat type, but decreased in Shell & tube type of EGR cooler. A cause was estimated from a change of the flow structure and a decrease of contact area as the EGR cooler fouling.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.12
• /
• pp.1009-1014
• /
• 2012

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.85.2-85.2
• /
• 2010

$Cu_2ZnSnSe_4$ (CZTSe) is one of candidate to alternate $Cu(In,Ga)Se_2$ as solar absorber material for solar cell. The expensive elements of In and Ga are replaced by Zn and Sn, respectively to lower the material cost. In this study we fabricated CZTSe thin film by selenization of single precursor layer consisted metallic constituent. Precursor compositions ratio were selected to have Cu-poor and Zn-rich content and prepared by RF magnetron sputtering. Thermal processing was applied to introduce selenium into as-deposited films at temperatures ranging from 350 to 500 for time up to 120 minutes. Single precursor films showed amorphous structure and consist of individual elements of Cu, Zn, and Sn. It was confirmed by XRD analysis that synthesis of CZTSe compound is occurred from lower temperature process, although concurrently additional phases such as binary cooper selenides are also existed. The quality of CZTSe crystal was improved as temperature increased. We also investigated the optical and electrical properties of as-selenized CZTSe as well.

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.06a
• /
• pp.66.1-66.1
• /
• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• 한국신재생에너지학회:학술대회논문집
• /
• 2010.11a
• /
• pp.90.2-90.2
• /
• 2010

The coated metallic bipolar plates are getting attractive due to their good feasibility of mass production, low contact resistance, high electrical/thermal conductivity, low gas permeability and good mechanical strength comparing with graphite materials. Yet, metallic bipolar plates for polymer electrolyte membrane(PEM) fuel cells typically require coatings for corrosion protection. Other requirements for the corrosion protective coatings include low electrical contact resistance between metallic bipolar plate and gas diffusion layer, good mechanical robustness, low mechanical and fabrication cost. The authors have evaluated a number of protective coatings deposited on stainless steel substrate by electroplating. The coated metallic bipolar plates are investigated with an electrochemical polarization tests, salt dipping tests, adhesion tests for corrosion resistance and then the contact resistance was measured. The results showed that the selective samples electroplated with optimized method, satisfied the DOE target for corrosion resistance and contact resistance, and also were very stabilized in the typical fuel cell environments in the long-term.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.171-171
• /
• 2012

We have studied the effects of plasma treatments on CdS buffer layers in CIGS thin film solar cells. The CdS layers were deposited on CIGS films by chemical bath deposition (CBD) method. The RF plasma treatments of the CdS thin films were performed with Ar, $O_2 and $N_2 gases, respectively. After plasma treatments, the solar cells with Al:ZnO/i-ZnO/CdS/CIGS structures were fabricated. The surface properties of the CdS/CIGS thin films after plasma treatments were investigated with SEM, EDX and AFM measurements. The electrical properties of manufactured solar cell were discussed with the results of current-voltage measurements. The plasma treatments have a strong influence on the open circuit voltage (VOC) and the fill factor of the solar cells. Finally, a correlation between the surface properties of CdS layer and the efficiencies of the CIGS thin film solar cells is discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.426-426
• /
• 2012

The CIGS absorber has outstanding advantages in the absorption coefficient and conversation efficiency. The CIGS thin film solar cells have been researched for commercialization and increasing the conversion efficiency. CIG precursors were deposited on the Mo coated glass substrate by magnetron sputtering with multilayer structure, which is CuIn/CuGa/CuIn/CuGa. Then, the metallic precursors were selenized under high Se pressure by RTP method which included. Se vapor was supplied using Se cracker cell instead of toxic hydrogen selenide gas. Se beam flux was controlled by variable reservoir zone (R-zone) temperature during selenization process. Cracked Se source reacted with CIG precursors in a small quantity of Se because of small size molecules with high activation energy. The CIGS thin films were studied by FESEM, EDX, and XRD. The CIGS solar cell was also developed by layering of CdS and ZnO layers. And the conversion efficiency of the CIGS solar cell was characterization. It was reached at 6.99% without AR layer.