• Restorative Dentistry and Endodontics
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• v.27 no.5
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• pp.543-551
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• 2002

Nitric oxide (NO) is a small molecule (mol. wt. 30 Da) and oxidative free radical. It is uncharged and can therefore diffuse freely within and between cells across membrane. Such characteristics make it a biologically important messenger in physiologic processes such as neurotransmission and the control of vascular tone. NO is also highly toxic and is known to acts as a mediator of cytotoxicity during host defense. NO is synthesized by nitric oxide synthase (NOS) through L-arginine/nitric oxide pathway which is a dioxygenation process. NO synthesis involves several participants, three co-substrates, five electrons, five co-factors and two prosthetic groups. Under normal condition, low levels of NO are synthesized by type I and III NOS for a short period of time and mediates many physiologic processes. Under condition of oxidant stress, high levels of NO are synthesized by type II NOS and inhibits a variety of metabolic processes and can also cause direct damage to DNA. Such interaction result in cytostasis, energy depletion and ultimately cell death. NO has the potential to interact with a variety of intercellular targets producing diverse array of metabolic effects. It is known that NO is involved in hemodynamic regulation, neurogenic inflammation, re-innervation, management of dentin hypersensitivity on teeth. Under basal condition of pulpal blood flow, NO provides constant vasodilator tone acting against sympathetic vasoconstriction. Substance P, a well known vasodilator, was reported to be mediated partly by NO, while calcitonin-gene related peptide has provided no evidence of its relation with NO. This review describes the roles of NO in dental pulp in addition to the known general roles of it.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.4
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• pp.734-742
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• 2016

Global warming and the depletion of fossil fuels have been caused by decades of reckless development. Wind energy is one form of renewable energy and is considered a future energy source. The wind tower is designed with a fundamental frequency in the soft-stiff design between the 1P and 3P range to avoid resonance. Usually, to perform natural frequency analysis of a wind tower, the boundary condition is set to the Fixed-End, and soil-pile interaction is not considered. In this study, consideration of the effect of soil-pile interaction on the wind tower was included and the difference in the natural frequency was studied. The fixed boundary condition was not affected by the soil condition and depth of the pile and the coupled spring boundary condition was unaffected by the depth of pile but affected by the depth of the pile, and the Winkler spring boundary condition is affected by both the soil condition and the depth of the pile. Therefore, the coupled spring boundary condition should be used in shallow depth soil conditions because the soil condition does not take the shallow depth soil into consideration.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.8-13
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• 2007

In MIS capacitor structure, we have studied the electrical properties in Ammonium Sulfide solution treatment while AIN thin film as a insulator is being formed by reactive sputtering method. The deposition process conditions of AIN thin film we temperature $250^{\circ}C$, DC Power 150 W, pressure 5 mTorr and 8 sccm(Ar : 4 sccm, $N_{2}$ : 4 sccm). The surface of GaAs was treated with Ammonium Sulfide solution, it was shown the leakage current was less than $10^{-8}\;A/cm^{2}$. The deep depletion phenomena of inverse area with treating Ammonium Sulfide solution in C-V analysis was improved as compared the condition of without Ammonium Sulfide solution and hysteresis property as well.

• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.221-228
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• 1993

The general requirements of recording media include recording performance, environmental stability, runnability on the drive or deck, and manufacturability. CoCrMo thin films were prepared using RF sputtering system for a study on chemical stability. Surface degradation of the CoCrMo thin film was studied by SEM, XPS and AES. Surface degradation was found to be dependent of sputtering condition and Mo content. Addition of Mo to CoCr thin film improved dramatically its surface degradation resistance in dilute sulfuric acid, as indicated by active-passive transition appeared in electrochemical polarization curve. Futhermore, the passive current density was decreased with increasing Mo content. The reduction in a number density of corrosion sites by Mo addition vms observed, after accelerated corrosion test. AES survey indicated that corrosion occured on the site with Cr depletion and highly concentrated chloride ions.

• The Bulletin of The Korean Astronomical Society
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• v.35 no.2
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• pp.73.2-73.2
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• 2010

In order to understand internal dynamics of starless cores, molecular line emissions are usually observed. From profiles of the molecular lines, internal motions of starless cores have been deduced using a simple radiative transfer model such as the two-layer model (Myers et al.1996). This brings complexities arising from the chemical evolution. The motivation of this study is to follow the chemical evolution of a starless core that goes through gravitational contraction. For this purpose, we have performed hydrodynamical simulations with a marginally unstable Bonnor-Ebert sphere as an initial condition. We follow the chemical evolution of this core with changing conditions such as the chemical reaction rate at the dust surface and the strength of radiation field that penetrate into the core. At the core center, the molecules suffer from a higher degree of molecular depletion on the dust covered by ice rather than on the bare silicate dust. The stronger radiation field dissociates more molecules at the core envelope. From analysis on the line profile using the two-layer model, we found that the speed of inward motion deduced from the HCN F = 2-1 line adequately traces the true infall speed, when the dust is covered by ice and the core is exposed to the diffuse interstellar radiation field. Under different conditions, the two-layer model significantly underestimate the infall speed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.4
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• pp.287-298
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• 2007

A two-dimensional treatment of the potential distribution under the depletion approximation is presented for poly-crystalline silicon thin film transistors. Green's function approach is adopted to solve the two-dimensional Poisson's equation. The solution for the potential distribution is derived using Neumann's boundary condition at the silicon-silicon di-oxide interface. The developed model gives insight into device behavior due to the effects of traps and grain-boundaries. Also short-channel effects and drain induced barrier lowering effects are incorporated in the model. The potential distribution and electric field variation with various device parameters is shown. An analysis of threshold voltage is also presented. The results obtained show good agreement with simulated results and numerical modeling based on the finite difference method, thus demonstrating the validity of our model.

• Journal of Power System Engineering
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• v.19 no.6
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• pp.39-46
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• 2015

With rising fuel costs and the depletion of fossil fuels, electric vehicles of high efficiency has been increasing interest. although high-performance battery continually is developing, Electric vehicles is not satisfied with the characteristics of the environment. In this study, By using the current fuel economy testing methods(5-cycle test), until the fully discharged battery electric vehicles is evaluated for a variety of environmental and operating conditions. As a result, Electric vehicles showed a low energy consumption efficiency in low temperature and rapid acceleration, deceleration in the operating environment compared with normal temperature.

• Journal of Sensor Science and Technology
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• v.16 no.4
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• pp.259-262
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, $H_{2}$, and Ar gas at $1150^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si (n-type) structure was fabricated. Its threshold voltage ($V_{bi}$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_{D}$) value were measured as 0.84 V, over 140 V, 61 nm, and $2.7{\times}10^{19}cm^{-3}$, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type) structure was annealed at 300, 400, and $500^{\circ}C$, respectively for 30 min under the vacuum condition of $5.0{\times}10^{-6}$ Torr. Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3CSiC p-n junction diode. Therefore, poly 3C-SiC thin film diodes will be suitable for microsensors in conjunction with Si fabrication technology.

• 한국신재생에너지학회:학술대회논문집
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• 2008.10a
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• pp.131-133
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• 2008

A serious problem of the 21st century is the supply of energy resources. Reserves of fossil fuels are facing depletion: renewable energy resources must be developed in this era. Dye sensitized solar cell (DSC) has been very economical and easy method to convert solar energy to electricity. Recently a novel tandem cell structure is proposed to improve photocurrent of DSC. To fabricated a tandem cell, the mesh structure of counter electrode is essential for the improvement in transmittance. In this study, we conducted the experiment to get the characteristic of DSC with mesh counter electrode. Under the standard test condition (AM 1.5, 100mW/$cm^2$), we obtained the maximum efficiency of 3.41% and the transmittance of 72% in the DSC with mesh counter electrode.

• Journal of Sensor Science and Technology
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• v.27 no.1
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• pp.40-46
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• 2018

In this paper, we focus on optimization of a boron ($^{11}B$)-implanted n type Si epi substrate for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $125^{\circ}C$. The $^{11}B$-implantation on the N type-Si epi substrate formed isolation from the rest of the N-type Si by the depletion region of a PN junction. The TCR increased as the temperature of rapid thermal anneal (RTA) was increased at the temperature range from $900^{\circ}C$ to $1000^{\circ}C$ for the $p^+$ contact with implantation at dose of $1E16/cm^2$, but sheet resistance of this film was decreased. After the optimization of anneal process condition, the TCR of $1126.7{\pm}30.3$ (ppm/K) was obtained for the $p^-$ resistor-COB package chips contained $p^+$ contact with the implantation of $5E14/cm^2$. This shows the potential of the $^{11}B$-implanted n type Si epi substrate as a resistor for pressure sensor in thermal stable environment applications..