• 한국재료학회지
• /
• 제9권7호
• /
• pp.735-739
• /
• 1999

본 연구에서는 sol-gel법으로 제조된 $PbTiO_3$ (PT) 단층박막내의 실시간 응력과 두께 수축거동, 그리고 다층박막의 미세경도를 온도의 함수로 측정하여 열처리에 따른 PT박막내의 물리화학적 변화를 설명하였다. 단층박막은 상온에서 $220^{\circ}C$까지 급격한 수축을 보였으며 총수축량의 83%가 이 온도구간에서 일어났다. as-spun된 박막 내에는 이미 75MPa의 인장응력이 존재하였으며 13$0^{\circ}C$부터 뚜렷이 증가하여 $250^{\circ}C$에서 147MPa의 최대 인장응력을 나타냈다. 인장응력의 급격한 감소가 일어나는 $370^{\circ}C$부터는 본격적으로 치밀화된 PT박막과 Si 기판과의 열팽창계수 차이가 주로 박막내의 응력을 결정하며, 이것은 다층박막의 미세경도가 $300^{\circ}C$ 이후에서 급격히 증가하는 사실로도 뒷받침된다. 한편 다층박막에서 단층박막과 달리 $550^{\circ}C$까지 열처리후 Perovskite 상이 많이 생성되었으며 이는 박막 두께의 증가에 따른 homogenous 핵생성 site의 증가 때문이라고 생각된다

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.386-389
• /
• 2001

In this study, development of a new LTCC material using non-glassy system was attempted with repsect to reducing the fabrication process steps and cost down. Lowering the sintering temperature can be achieved by liquid phase sintering. However, presence of liquid phases usually decrease dielectric properties, especially the quality factor. Therefore, the starting material must have quality factor as high as possible in microwave frequency range. And also, the material should have a low dielectric constant for enhancing the signal propagation speed. Regarding these factors, dielectric constants of various materials were estimated by the Clausius-Mosotti equation. Among them, $ZnWO_4$ was turned out the suitable LTCC material. $ZnWO_4$ can be sintered up to 98% of full density at $1050^{\circ}C$ for 3 hours. It's measured dielectric constant, quality factor, and temperature coefficient of resonant frequency were 15.5, 74380GHz, and $-70ppm/^{\circ}C$, respectively. In order to modify the dielectric properties and densification temperature, $B_{2}O_{3}$ and $V_{2}O_{5}$ were added to $ZnWO_4$. 40 mol% $B_{2}O_{3}$ addition reduced the dielectric constant from 15.5 to 12. And the temperature coefficient of resonant frequency was improved from -70 to $-7.6ppm/^{\circ}C$. However, sintering temperature did not change due to either lack of liquid phase or high viscosity of liquid phase. Incorporation of small amount of $V_{2}O_{5}$ in $ZnWO_{4}-B_{2}O_{3}$ system enhanced liquid phase sintering. 0.1 wt% $V_{2}O_{5}$ addition to the $0.6ZnWO_{4}-0.4B_{2}O_{3}$ system, reduced the sintering temperature down to $950^{\circ}C$. Dielectric constant, quality factor, and temperature coefficient of resonant frequency were 9.5, 16737GHz, and $-21.6ppm/^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
• /
• 제18권6호
• /
• pp.554-559
• /
• 2005

Ni/Cr thin film is very interesting material as thin film resistors, filaments, and humidity sensors because their relatively large resistivity, more resistant to oxidation and a low temperature coefficient of resistance (TCR). These interesting properties of Ni/Cr thin films are dependent upon the preparation conditions including the deposition environment and subsequent annealing treatments. Ni/Cr thin films of 250 nm were deposited by DC magnetron sputtering on $Al_2O_3/Si$ substrate with 2-inch Ni/Cr (80/20) alloy target at room temperature for 45 minutes. Annealing treatments were performed at $400^{\circ}C,\;500^{\circ}C,\;and\;600^{\circ}C$ for 6 hours in air or $H_2$ ambient, respectively. The clear crystal boundaries without crystal growth and the densification were accomplished when the pores were disappeared in air ambient. Most of surface was oxidic including NiO, $Ni_2O_3$ and $Cr_xO_y$(x=1,2, y=2,3) after annealing in air ambient. The crystal growth in $H_2$ ambient was formed and stabilized by combination with each other due to the suppression of oxidized substance on film surface. Most oxidic Ni was restored when the oxidic Cr was present due to its stability in high-temperature $H_2$ ambient.

• Composites Research
• /
• 제16권3호
• /
• pp.1-8
• /
• 2003

금속복합재료 개발을 위한 고온가압 성형공정은 기지재료의 비탄성거동과 성형체 내부의 기공에 대한 충진 과정을 수반하며 이러한 강화공정은 압력, 온도 그리고 강화재와 모재의 상대부피분률과 같은 공정변수의 영향을 받게 된다. 특히 티타늄금속기 복합재료의 강화공정은 강화재와 모재 사이의 기계적 혹은 열적 특성 차이 및 생산환경으로 인한 다양한 형태의 손상이 발생할 수 있으며 따라서 이들을 극복하기 위한 재료특성, 작용압력, 온도, 시간조건 등과 공정에 따른 조직의 진전 등 미소역학적 연구가 수반된 최적의 고온가압강화공정의 개발이 요구되어진다. 이를 위하여 본 연구는 VHP방식을 이용한 SiC／Ti-6Al-4V 연속섬유강화 금속기 복합재료의 강화공정실험을 수행하였으며 특히 미시역학적 접근에 따른 다공성 재료의 구성방정식을 이용하여 보강재와 기지재료의 변형거동과 고온가압공정에 필요한 다양한 조건들을 실험결과와 비교 연구하였으며 유한요소해석을 통해 공정변수와 그에 따른 결과들을 고찰하였다.

• 센서학회지
• /
• 제7권1호
• /
• pp.51-60
• /
• 1998

초전형 적외선센서를 제조하기 위하여 La가 첨가된 $PbTiO_{3}$(PLT)박편을 소결온도, La첨가량 및 소결시의 분위기분말의 양과 같은 제조조건을 달리하면서 제조하여 이에 따른 시편의 구조적 특성을 X-선 회절기, 전자현미경 및 상대밀도의 측정을 통하여, 유전특성을 유전상수와 큐리온도 등의 측정을 통하여 조사하였다. La 첨가랑이 증가함에 따라 정방성비 c/a는 감소하였으며, 상대밀도 및 입자의 크기는 증가하였다. 이는 La 첨가량이 증가함에 따라 전하중성을 유지하기 위한 Pb공공의 증가에 기인하는 것으로 판단된다. 소결시 분위기분말의 증가는 La 첨가에 따른 효과에 비해 미미하지만 정방성비를 미세하게나마 증가시켜 PbO의 휘발을 감소시키는 것으로 나타났다. La 첨가량에 따른 정방성비의 감소로 상온에서의 유전상수는 증가하였으며 큐리온도는 감소하였다.

• 한국화재소방학회논문지
• /
• 제32권4호
• /
• pp.122-130
• /
• 2018

최근 도시화 및 인구의 밀집화는 전 세계적인 기후변화의 영향과 더불어 재난의 대형화 및 복합화를 유발하고 있다. 그러나 국내의 경우, 재난발생에 대하여 예방, 구조, 복구에 중점을 두고 있으며, 재난 시 생명유지에 절대적으로 필요한 재난의료는 외면되고 있는 실정이다. 따라서, 본 연구에서는 침수피해가 빈번하며, 지하주택이 밀집되어 피해가능성이 크다고 판단되는 서울시를 대상으로, 침수이력지역의 지하주택을 응급환자 발생지로 가정하고 이송거리 및 이송시간을 분석하였다. 본 연구는 응급의료시설과 재난발생지로의 접근성과, 구급대로부터 재난발생지로의 접근성을 함께 고려하여 응급의료서비스 개선의 기초자료로써 의의가 있다고 판단된다.

• 한국재료학회지
• /
• 제27권9호
• /
• pp.495-500
• /
• 2017

Oxide layers were formed by an environmentally friendly plasma electrolytic oxidation (PEO) process on AZ91 Mg alloy. PEO treatment also resulted in strong adhesion between the oxide layer and the substrate. The influence of the KF electrolytic solution and the structure, composition, microstructure, and micro-hardness properties of the oxide layer were investigated. It was found that the addition of KF instead of KOH to the $Na_2SiO_3$ electrolytic solution increased the electrical conductivity. The oxide layers were mainly composed of MgO and $Mg_2SiO_4$ phases. The oxide layers exhibited solidification particles and pancake-shaped oxide melting. The pore size and surface roughness of the oxide layer decreased considerably with an increase in the concentration of KF, while densification of the oxide layers increased. It is shown that the addition of KF to the basis electrolyte resulted in fabricating of an oxide layer with higher surface hardness and smoother surface roughness on Mg alloys by the PEO process. The uniform thickness of the oxide layer formed on the Mg alloy substrates was largely determined by the electrolytic solution with KF, which suggests that the composition of the electrolytic solution is one of the key factors controlling the uniform thickness of the oxide layer.

• 한국분말재료학회지
• /
• 제25권2호
• /
• pp.144-150
• /
• 2018

$Al_2O_3-SiC$ ceramic composites are produced using pressureless sintering, and their plasma resistance, electrical resistance, and mechanical properties are evaluated to confirm their applicability as electrostatic-discharge-safe components for semiconductor devices. Through the addition of Mg and Y nitrate sintering aids, it is confirmed that even if SiC content exceeded 10%, complete densification is possible by pressureless sintering. By the uniform distribution of SiC, the total grain growth is suppressed to about $1{\mu}m$; thus an $Al_2O_3-SiC$ sintered body with a high strength over 600 MPa is obtained. The optimum amount of SiC to satisfy all the desired properties of electrostatic-discharge-safe ceramic components is obtained by finding the correlation between the plasma resistance and the electrical resistivity as a function of SiC amount.

• 한국세라믹학회지
• /
• 제20권3호
• /
• pp.211-216
• /
• 1983

This work aims at characterizing silicon grains and its compacts. In order to remove iron silicon grains were washed with 5N hydrochloride at 60-7$0^{\circ}C$ for 170 hrs, and then followed the chemical analysis by atomic absorption spectrophotometer X-ray diffraction analysis SEM observation and specific surface area determination by B. E. T. Mixtures of graded silicon particles with two or three different sizes were made into packings by mechanical vibration. The mixtures were used to make compacts with 10 mm in diameter and 70mm in length by isostatically pressing at 1, 208 kg/$cm^2$ (20 kpsi) and 4, 255kg/$cm^2$ (60 kpsi) respectively. Bulk densities of packings and compacts were measured. A slip made of magnesium nitrate solution and fine silicon particles was spray-dried and then decomposed at 30$0^{\circ}C$ for the purpose of coating the uniform layer of magnesium oxide on the surface of particles. The results obtained are as follows: (1) About two thirds of iron content could be removed from silicon by washing silicon powders with hydrochloride. (2) Uniform layer of magnesium oxide on the surface of silicon could be prepared by spray-drying suspension and by decomposing it. (3) B. E. T. specific surface area of fine silicon particles was 2, 826.753$m^3$/kg. (4) In the binary system with two sizes of 40-53$\mu\textrm{m}$ particles and <10$\mu\textrm{m}$ particles the maximum bulk density of packing was 55% of theoretical value and that of compacts made at the pressure of 4, 255 kg./$cm^2$ (60 kpsi) was 73% of theoretical value. (5) In the ternary system with three sizes the maximum bulk density of packing was 1.43 g/$cm^3$and that of compacts was 1.80g/$cm^3$which is equivalent to 77.6% of theoretical value. The composition of the closest compact was consisted of 50% of 40-53$\mu\textrm{m}$ particles 20% of 10-30$\mu\textrm{m}$ particles and 30% of <10$\mu\textrm{m}$ parti-cles.

• 한국전기전자재료학회논문지
• /
• 제16권11호
• /
• pp.979-986
• /
• 2003

Sintering behavior and electrical properties of CeO$_2$ system were investigated as a function of the amount of Gd:$_2$O$_3$, and Sm$_2$O$_3$, addition. Doped CeO$_2$ consisted of a homogeneous solid solution of the cubic fluorite structure within the amount of addition from 0 mol% to 15 mol%. Grain growth rate of Gd$_2$O$_3$-doped CeO$_2$ was much smaller than that of pure CeO$_2$, while densification rate was considerably larger. Thus doped CeO$_2$ showed a higher density than pure CeO$_2$. The electrical conductivity of Ce$_1$-$_{x}$Sm$_{x}$O$_1$-$_{x}$/2 was increased up to x = 0.2. However, with further increasing dopant concentrations, the magnitude of the conductivity was found to decrease remarkably. The ionic conductivity value obtained at $700^{\circ}C$ for 10 mol% Sm$_2$O$_3$-doped CeO$_2$ electrolyte was 4.6${\times}$10$^{-2}$ S$.$$cm^{-1}$ /.EX> /.