• Journal of applied mathematics & informatics
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• v.31 no.5_6
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• pp.669-676
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• 2013

Let $a$ and $b$ be two even integers with $2{\leq}a<b$, and let k be a nonnegative integer. Let G be a graph of order $n$ with $n{\geq}\frac{(a+b-1)(a+b-2)+bk-2}{b}$. A graph G is called an ($a,b,k$)-critical graph if after deleting any $k$ vertices of G the remaining graph of G has an [$a,b$]-factor. In this paper, it is proved that G is an ($a,b,k$)-critical graph if $${\mid}N_G(X){\mid}&gt;\frac{(a-1)n+{\mid}X{\mid}+bk-2}{a+b-1}$$ for every non-empty independent subset X of V (G), and $${\delta}(G)>\frac{(a-1)n+a+b+bk-3}{a+b-1}$$. Furthermore, it is shown that the result in this paper is best possible in some sense.

• Molecules and Cells
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• v.19 no.2
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• pp.289-293
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• 2005

BAF53 is an actin-related protein that shuttles between nucleus and cytoplasm. In the nucleus, it constitutes an integral component of many chromatin-modifying complexes such as the SWI/SNF, TIP60, TRRAP, and TIP48/49 complexes. BAF53 is essential for growth, but its function remains elusive. BAF53 homologues from yeast to humans have a conserved N-terminal motif, MS_(G/A)(G/A)__(V/L)YGG, which is unique to these proteins. Previously we showed that over-expression of an N-terminal deletion mutant of BAF53 ($BAF53_-{\Delta}N$) reduced the viability of HEK293 and HeLa cells. When we replaced the serine 2 and tyrosine 6 of this N-terminal motif with alanine, over-expression of the alanine-replaced BAF53 strongly impaired the growth of HEK293 cells whereas replacement with aspartate/glutamate had no effect. The alanine-replaced BAF53 mutants also stimulated p53-dependent transcription, in which the SWI/SNF and TRRAP complexes are involved. Our results demonstrate that serine 2 and tyrosine 6 play important roles in BAF53 activity.

• Journal of the Korean Society for Nondestructive Testing
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• v.8 no.1
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• pp.12-21
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• 1988

The behaviour of pressure vessel made of SS41 steel was investigated during hydrotest. AE tests were carried out for the vessels in as-manufactured, V-notched and weld-cracked state using microcomputer-based AE instrumentation. The following results were obtained: 1) In the case of source location using cylindrical program, to minimize the error of source location, the difference of max. Delta T values measured from each sensor should be kept as small as possible. 2) When crack grew, AE event rate increased continuously but AE event from the inclusions occurred intermittently, so by analyzing event rate, the source of AE could be derived. 3) From the spot welding part of supporter, many events with low energy occurred independent of Kaiser effect, which could be confirmed by analyzing energy parameter. 4) The b-value from the tensile specimen of was lower than that from normal specimen and the b-value from crack propagation was lower than that from deformation, so by analyzing peak amplitude distribution, the source mechanism could be derived from the b-value.

• Progress in Superconductivity
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• v.11 no.1
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• pp.72-77
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• 2009

Low temperature scanning laser microscopy (LTSLM) can be used for a two-dimensional display of bolometric response arising from the localized excitation of a sample by the focused laser beam. In this study, the distribution of critical temperature ($T_c$) and critical current density ($J_c$) in YBCO coated conductor were analyzed using LTSLM. For improving the temperature stability, we have modified the system into a double-shielding type. Through the modification, the temperature stability was successfully improved from ${\pm}10mK\;to\;{\pm}2mK$. The superconducting properties of YBCO coated conductors were measured for the sample of a narrow bridge type using wet etching process. The spatial non-uniformity of the ac voltage response, ${\delta}V(x)$, which is proportional to ${\partial}\rho(x,J_B)/{\partial}T$ in the transition temperature region could be observed and displayed in a two-dimensional image.

• Proceedings of the Korean Nuclear Society Conference
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• 1997.05a
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• pp.33-38
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• 1997

Criticality experiments with fixed neutron poison plates for water moderated and reflected low enriched(2.35 and 4.31 wt%) UO$_2$fuel rod clusters were evaluated to validate calculation techniques employed in analyzing fuel shipping and storage systems having steel, boral, or cadmium shield. Measurements were obtained for both the 2.35 wt% and the 4.31 wt% enriched rods in square pitched, water flooded lattices. The critical experiments with the 2.35 wt% enriched rods consists of three 20$\chi$ 16 or 20$\chi$ 17 fuel cluster. Critical separation were used in the experiments with the 4.31 wt% enriched fuel rods. In the experiments, the poison plates were placed on both sides of the centrally located fuel cluster. Critical separation between the three sub-critical fuel clusters were then measured for varying plate thicknesses and distances of the plates to the center fuel cluster. Calculations were performed for thirty eight critical configuration using KENO-V. a and MCNP. All of the results were within 1.23% in $\Delta$k when individually compared with the critical value of 1.0. Discrepancies of the code results are probably due to uncertainties in experiments and/or analytical modeling experiments. In general, MCNP predictions were observed to be in best agreement with the experiments.

• Journal of Electrical Engineering and Technology
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• v.2 no.3
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• pp.300-305
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• 2007

This paper reports an investigation of overvoltages caused by ferroresonance in the distribution system, which consists of a bank of open-delta single-phase voltage transformers. The high voltage sides of the voltage transformer are connected to the distribution system via three single-phase fuse cutouts. Due to the saturation characteristic of the transformer cores, ferroresonance can occur in the condition that the transformer is energized or deenergized with single-phase switching operation of the fuse cutouts. The simulation tool based on EMTP is used to investigate the overvoltages at the high side of voltage transformer. Bifurcation diagrams are used to present the ferroresonance behavior in ranges of different operating conditions. The simulation results are in good agreement with the results from the experiment of 22 kV voltage transformers. The mitigation technique with additional damping resistors in the secondary windings of the voltage transformers will be introduced. Brief discussion will be made on the physical phenomena related to the overvoltage and the damage of voltage transformer.

• Proceedings of the KIEE Conference
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• 2008.10b
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• pp.123-124
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• 2008

본 논문에서 설계한 온도센서는 $0.l8{\mu}m$ CMOS 공정으로 $-55^{\circ}C{\sim}125^{\circ}C$의 온도 범위에서 ${\pm}0.1^{\circ}C$의 정확도를 갖는다. 이 센서는 parasitic PNP 트랜지스터로 온도 변화에 따른 전압을 추출하고 시그마-델타 변조기를 이용하여 디지털 온도 값을 얻기 위한 비트스트림을 생성한다. 또한, 이상적이지 않은 요소로 인해 발생할 수 있는 에러를 $0.01^{\circ}C$ 레벨로 감소시키기 위해 DEM(Dynamic Element Matching)과 2차 시그마-델타 변조기를 이용하였고, Bandgap Reference 회로로 온도 변화에 상관없이 일정한 bias 전압을 생성한다. 설계된 온도센서의 면적은 PAD를 포함하여 $0.98mm{\times}0.92mm$이고, 1.8V 단일 전원에서 동작한다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.5
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• pp.370-373
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• 2011

We investigated the effects of low temperature ($500^{\circ}C$) $O_2$ annealing on the characteristics of hafnium silicate ($HfSi_xO_y$) films deposited on a Si substrate by atomic layer deposition (ALD). We found that the post deposition annealing under oxidizing ambient causes the oxidation of residual Hf metal components, resulting in the improvement of electrical characteristics such as flat band voltage shift (${\Delta}V_{fb}$) by hysteresis without oxide capacitance reduction. We suggest that post deposition annealing under oxidizing ambient is necessary to improve the electrical characteristics of $HfSi_xO_y$ films deposited by ALD.

• Journal of Electrical Engineering and Technology
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• v.13 no.6
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• pp.2425-2433
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• 2018

This study investigates a new organic based material and its dielectric and mechanical properties. It is a comprehensive nanocomposite comprising a combination of various types of nanofillers with hydrophobic silica nanoparticles (AEROSIL R 974) as a matrix modifier and a polyamide nano nonwoven textile, Ultramid-Polyamide 6, pulped in the electrostatic field as a dielectric barrier. The polymer matrix is an epoxy network based on diglycidyl ether of bisphenol A (DGEBA) and cycloaliphatic diamine (Laromine C260). The designed nanocomposite material is an alternative to the conventional three-component composites containing fiberglass and mica with properties that exceed current electroinsulating systems (volume resistivity on the order of $10^{16}{\Omega}{\cdot}m$, dissipation factor tan ${\delta}=4.7{\cdot}10^{-3}$, dielectric strength 39 kV/mm).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.310-310
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• 2013

본 연구에서는 Titanium (Ti) source/drain 전극 접합이 차세대 비정질 InGaZnO (IGZO) 기반 박막형 트랜지스터에 미치는 영향을 화학적, 구조적, 전기적 특성 분석을 통하여 관찰하고 Ti/IGZO 접합 특성을 설명할 수 있는 메커니즘을 제시하였다. IGZO 기반 박막형 트랜지스터 소자의 구동 특성은 transmission line method (TLM) 패턴 공정을 이용하여 정량적으로 분석되었다. 비정질 IGZO 기반의 박막형 트랜지스터에서 Ti source/drain 전극 접합에 의한 구동 특성 변화 및 영향을 확인하기 위하여 금속/산화물 계면 반응성이 낮은 silver (Ag) source/drain 전극이 reference로 비교되었으며, 그 결과 Ti source/drain 전극 접합이 적용된 비정질 IGZO 트랜지스터의 경우 Ti 금속과 IGZO 산화물 계면에 형성되는 열역학적으로 안정한 $TiO_x$ 층의 형성에 의해 VT ($-{\Delta}0.52V$) shift 및 saturation mobility ($8.48cm^2$/Vs) 상승됨을 확인하였다. 뿐만 아니라 TLM 패턴을 이용한 IGZO 트랜지스터의 전기적 변수 도출 및 수치적 해석으로부터 $TiO_x$ 계면층 형성이 Ti 금속과 비정질 InGaZnO 계면에서의 effective contact resistivity를 효과적으로 낮출 수 있음을 확인하였다. Ti source/drain 전극 접합에 의해 발생되는 $TiO_x$ 계면층의 화학적, 구조적 특성과 $TiO_x$ 계면층 생성에 의한 소자 특성 변화를 연관시켜 해석함으로써, IGZO 기반 박막형 트랜지스터에서의 Ti source/drain 전극 접합이 비정질 IGZO 기반 박막형 트랜지스터에 미치는 영향을 설명하였다.