• Journal of Magnetics
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• v.11 no.1
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• pp.12-15
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• 2006

Magnetic and electronic properties of reduced rutile titanium dioxide $(TiO_{2-\delta})$ thin films doped by Mn have been investigated. The present sol-gel-grown semiconducting $TiO_{2-\delta}:Mn$ films exhibit a ferromagnetic behavior at room temperature for a limited range of Mn content. The Mn-doped films have p-type electrical conductivity with the carrier concentration near $10^{19}\;cm^{-3}$. The observed room-temperature ferromagnetism is believed to be intrinsic but not related to free carriers such as holes. Oxygen vacancies are likely to contribute to the room-temperature ferromagnetism-trapped carriers in oxygen vacancies can mediate a ferromagnetic coupling between neighboring $Mn^{+3}$ ions. The energy band-gap change due to the Mn doping measured by spectroscopic ellipsometry exhibits a red-shift compared to that of the undoped sample at low Mn content. It is explainable in terms of strong spin-exchange interactions between Mn ion and the carrier.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.12
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• pp.1301-1307
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• 2004

Reduced pressure chemical vapor deposition(RPCYD) technology has been investigated for the growth of SiGe epitaxial films with two dimensional in-situ doped boron impurities. The two dimensional $\delta$-doped impurities can supply high mobility carriers into the channel of SiGe heterostructure MOSFETs(HMOS). Process parameters including substrate temperature, flow rate of dopant gas, and structure of epitaxial layers presented significant influence on the shape of two dimensional dopant distribution. Weak bonds of germanium hydrides could promote high incorporation efficiency of boron atoms on film surface. Meanwhile the negligible diffusion coefficient in SiGe prohibits the dispersion of boron atoms: that is, very sharp, well defined two-dimensional doping could be obtained within a few atomic layers. Peak concentration and full-width-at-half-maximum of boron profiles in SiGe could be achieved in the range of 10$^{18}$ -10$^{20}$ cm$^{-3}$ and below 5 nm, respectively. These experimental results suggest that the present method is particularly suitable for HMOS devices requiring a high-precision channel for superior performance in terms of operation speed and noise levels to the present conventional CMOS technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.167.2-167.2
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• 2015

고 이동도(~10 cm/Vs), 낮은 공정온도 및 높은 투과율 등의 특성을 갖는 산화물 반도체는 저 소비전력, 대면적화 및 고해상도 LCD Panel에 적합한 재료로서 현재 일부 Mobile Panel 및 TFT-LCD Panel의 양산에 적용되고 있으나, 향후 UHD급(4 K, 8 K)의 대형, 고해상도 Panel에의 적용을 위해서는 30 cm2/Vs 이상의 고 이동도 재료의 개발 및 저 저항 배선의 적용에 따른 소자 신뢰성의 개선이 필요하다. Cu는 대표적인 저 저항 배선 재료로 일부 양산에 적용되고 있으나, Cu 전극과 산화물 반도체의 계면에서 Cu원자의 확산 및 Cu-O 층의 형성에 의한 소자 특성 저하의 문제가 있다. 본 연구에서는 고 이동도의 In doped-ZTO계 산화물 반도체를 기반으로 채널 층과 Cu source-Drain layer의 계면에서의 Cu element의 거동 및 TFT 소자 특성과의 상관관계를 고찰하고, 계면에 형성된 Cu-O layer에 대해 높은 전자 친화도를 갖는 Ca element를 첨가에 의한 TFT 소자 특성의 변화를 관찰하였다. 본 연구에서는 이러한 효과로 인한 소자 신뢰성의 향상을 기대하였으며, 우선 In doped-ZTO 채널 층에 Cu와 CuCa 2at% source-drain을 적용한 TFT 특성을 확인하였다. 그 결과, Cu는 Field-effect mobility: ~17.67 cm2/Vs, Sub-threshold swing: 0.76 mV/decade 및 Vth:, 4.40 V의 결과가 얻어졌으며 CuCa 2at%의 경우 Field-effect mobility: ~17.84 cm2/Vs, Sub-threshold swing: 0.86 mV/decade 및 Vth:, 5.74 V의 결과가 얻어졌다. 소자신뢰성 측면에서도 Bias Stress의 변화량 ${\delta}Vth$의 경우 Cu : 4.48 V에 대해 CuCa 2at% : 2.81 V로 ${\delta}Vth$:1.67 V의 개선된 결과를 얻었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.593-596
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• 2003

A proposed way to prepare $YBa_2Cu_3O_y$ wires or tapes is that Ag is used as substrate and melting point of $YBa_2Cu_3O_y$ is decreased to lower than the melting point of silver ($961\;^{\circ}C$). Therefore after the deposition of $YBa_2Cu_3O_y$ film on Ag substrate, the heat treatment can be carried out below the Ag melting point. Silver (Ag) and Lead oxide(PbO) were selected to be additives for $YBa_2Cu_3O_y$. Different Ag and PbO contents were added in $YBa_2Cu_3O_y$, the melting points of which were measured by DTA. In order to guarantee that the superconductivity of $YBa_2Cu_3O_y$ was not reduced after Ag and PbO added into $YBa_2Cu_3O_y$, their superconductivities were measured. It is proved that as additives, both Ag and PbO can reduce the melting point of $YBa_2Cu_3O_y$. For Ag doped $YBa_2Cu_3O_y$, $T_c$ is about 93K and ${\Delta}Tc$ is $2{\sim}3K$. For PbO doped $YBa_2Cu_3O_y$, $T_c$ is $88K{\sim}92K$ and ${\Delta}T_c$ is $11{\sim}12K$. When 10 wt% of Ag and 10 wt% PbO were added in $YBa_2Cu_3O_y$, the melting point of the mixture of $YBa_2Cu_3O_y$ (80 wt%), Ag (10 wt%) and PbO (l0 wt%) is $943^{\circ}C$. The transition temperatures ($T_c$) of the sample is 91.8 K.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.297-302
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• 2007

With aids of square wave voltammetry (SWV) the redox behavior for various combination of polyvalent ions (Sb+Fe, Sb+Zn, Sb+Ce+Ti+Zn) was investigated in alkali-alkaline earth-silica CRT (Cathode Ray Tube) glass melts. The current-potential curve so called voltammogram was produced at temperature range of 1400 to $1000^{\circ}C$ under the scanned potential between 0 and -800 mV at 100 Hz. In the case of the Sb+Fe and Sb+Zn doped melts, peak for $Sb^{3+}/Sb^0$ shown voltammogram was shifted to negative direction comparing to the only Sb doped melts. However, according to voltammogram of Sb+Ce+Ti+Zn doped melt, Ti and Ce except Zn had hardly any influence on the redox reaction of Sb. Based on the temperature dependence of the peak potential, standard enthalpy (${\Delta}H^0$) and standard entropy (${\Delta}S^0$) for the reduction of $Fe^{3+}$ to $Fe^{2+}$, $Sb^{3+}$ to $Sb^0$, $Zn^{2+}$ to $Zn^0$ and $Ti^{2+}$ to $Ti^0$ in each polyvalent ion combination of CRT glass melts were calculated.

• Membrane Journal
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• v.21 no.1
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• pp.55-61
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• 2011

$BaCo_{0.7}Fe_{0.22}Nb_{0.08}O_{3-{\delta}}$ oxide was synthesized by solid state reaction method. Dense ceramic membrane was prepared using as-prepared powder by pressing and sintering at $1,200^{\circ}C$. XRD result of membrane showed single perovskite structure. Leakage and oxygen permeation test were conducted on the membrane sealed by glass ring as a sealing material. The oxygen permeation flux increased with increasing temperature and pressure difference and maximum oxygen permeation flux was $2.3mL/min{\cdot}cm^2$ at $950^{\circ}C$ with $Po_2$ = 0.63 atm of oxygen partial pressure. The oxygen permeation in the condition of air with $CO_2$ (300 ppm) as feed stream decreased as much as only maximum 2.9% in comparison with air feed stream. It indicated $BaCo_{0.7}Fe_{0.22}Nb_{0.08}O_{3-{\delta}}$ membrane is more stable than another membrane for carbon dioxide.

• Journal of the Korean Chemical Society
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• v.55 no.6
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• pp.932-935
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• 2011

Using tetrabutyl titanate as precursor, $Eu^{3+}$ doped $TiO_2$ nano-powder was prepared by sol-gel method, the nature of luminescence of nano-powder was studied. The interaction of chlorpyrifos with $Eu^{3+}$ doped $TiO_2$ was studied by absorption and fluorescence spectroscopy. The results indicated the fluorescence intensity of $Eu^{3+}$ doped $TiO_2$ was quenched by chlorpyrifos and the quenching rate constant ($k_q$) was $1.24{\times}10^{11}\;L/mol{\cdot}s$ according to the Stern-Volmer equation. The dynamics of photoinduced electron transfer from chlorpyrifos to conduction band of $TiO_2$ nanoparticle was observed and the mechanism of electron transfer had been confirmed by the calculation of free energy change (${\Delta}G_{et}$) by applying Rehm-Weller equation as well as energy level diagram. A new rapid method for detection of chlorpyrifos was established according to the fluorescence intensity of $Eu^{3+}$ doped $TiO_2$ was proportional to chlorpyrifos concentration. The range of detection was $5.0{\times}10^{-10}-2.5{\times}10^{-7}mol/L$ and the election limit ($3{\sigma}$) was $3.2{\times}10^{-11}$ mol/L.

• Progress in Superconductivity and Cryogenics
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• v.20 no.4
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• pp.41-45
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• 2018

We have investigated the effect of $Y_2O_3$ nanoparticles on the pinning properties of $Y_2O_3$-doped $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films. Both undoped and $Y_2O_3$-doped GdBCO films were grown on $CeO_2$-buffered MgO (100) single crystal substrates by pulsed laser deposition (PLD) using KrF (${\lambda}=248nm$) laser. The $Y_2O_3$ doping contents were controlled up to ~ 2.5 area% by varying the internal angles of $Y_2O_3$ sectors put on the top surface of GdBCO target. Compared with the $Gd_2O_3$-doped GdBCO films previously reported by our group [1], the $Y_2O_3$-doped GdBCO films exhibited less severe critical temperature ($T_c$) drop and thus slightly enhanced critical current densities ($J_c$) and pinning force densities ($F_p$) at 65 K for the applied field parallel to the c-axis of the GdBCO matrix (B//c) with increasing the doping content. Below 40 K, the in-field $J_c$ and $F_p$ values of all $Y_2O_3$-doped GdBCO films exhibited higher than those of undoped GdBCO film, suggesting that $Y_2O_3$ inclusions might act as effective pinning centers.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.290-298
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• 2018

In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.

• Journal of the Korean Ceramic Society
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• v.45 no.5
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• pp.297-302
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• 2008

To direct the evolution of nanostructure and immobilize ${\gamma}-Al_2O_3$ catalyst, nanocrystalline La-doped-$Al_2O_3$ powder were prepared by the sol-gel process with addition of an amphiphilic block copolymer template (pluronic P123: $(poly(ethyleneoxide)_{20}-poly(propyleneoxide)_{70}-poly(ethyleneoxide)_{20})$. The dried gel is amorphous, whereas heating at temperature above $700^{\circ}C$ leads to the formation of nanocrystalline ${\gamma}$ and ${\delta}-Al_2O_3$ and these two phases is kept until $1100^{\circ}C$. ${\alpha}-A1_2O_3 $starts to form at $1200^{\circ}C$ with $LaAl_{11}O_{18}$. The surface morphology and crystal structure has been observed by field emission scanning electron microscope (FE-SEM) and X-ray diffraction (XRD). Solid state $^{27}Al$ MAS NMR indicates two types of local environment, i.e. octahedral and tetrahedral sites. The surface area and pore size was compared among these powders using the BET nitrogen adsorption measurements.