• Korean Journal of Materials Research
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• v.9 no.5
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• pp.533-537
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• 1999

ATO(Sb doped $SnO_2$) thin films whose thicknesses were 600, 1100 and $2100\AA$ were prepared by DC magnetron sputtering method. They showed the lowest resistivity at DC sputtering power 0.24kW and had lower resistivity with increasing thickness. The power dependence of resistivity among ATO thin films was also different with thickness. The increase of carrier concentration in ATO thin films was responsible for the decrease of resistivity with thickness increase. ATO thin films which were prepared at 30sccm oxygen flow rate showed a great change of sheet resistance under 1M HCl solution. The investigation of SAM(Scanning Auger Microprobe) revealed that oxygen atomic percentage on the surface of ATO thin films was changed. The decrease of sheet resistance also occurred when ATO thin films, prepared at 30sccm oxygen flow rate, were exposed to air for a long period of time. For this reason, it was considered that the desorption of oxygen on ATO surface was accelerated by HCl.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.354-354
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• 2007

Titanium nitride (TiN) thin films are widely used for hard coatings due to their superior hardness. In this paper, we wanted see how the films properties are changed according to DC power. TiN thin films were deposited by direct current (DC) magnetron sputtering method using TiN compound target on silicon substrates. The films structural properties are examined by X-ray Diffractions (XRD) and tribological properties are measured by nano-indentation, nano-scratch tester, nano-stress tester. Especially in DC power of 150 W, the maximum hardness and the minimum residual stress of TiN film exhibited about 25 GPa and 1 GPa, respectively. And also, the critical load of TiN film prepared by magnetron sputtering method were measured over 30 N.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.249-249
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• 2015

Silver films have been of considerable interest for years due to their better performance relative to other metal films for engineering applications. A series of multi-layer silver coatings with different thickness (i.e. 0.3 um to 1.5 um) were prepared on Aluminium substrate containing copper undercoat by direct current (DC) magnetron sputtering method. For the comparative purpose, similar thickness silver coatings were prepared by electrolytic deposition method. Microstructural, morphological, and mechanical characteristics of the silver coatings were evaluated by means of scanning electron microscope (SEM), X-ray diffraction (XRD), Surface roughness test, microhardness test and nano-scratch test. From the results, it has been elucidated that the silver films prepared by DC magnetron sputtering method has superior properties in comparison to the wet coating method. On the other hand, DC magnetron sputtering method is relatively easier, faster, eco-friendly and more productive than the electrolytic deposition method that uses several kinds of hazardous chemicals for bath formulation. Therefore, a New Work Item Proposal (NWIP) for the test methods standardization of DC magnetron sputtered silver coatings has recently been proposed via KATS, Korea and a NP ballot is being progressed within a technical committee "ISO/TC107-metallic and other inorganic coating".

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.173-175
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• 1990

A dc magnetron system for cathode sputtering with a spool-shaped cathode is described. The sputtering conditions are discussed concerning pressure, magnetic field and discharge current.

• Journal of the Korean Society for Heat Treatment
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• v.22 no.3
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• pp.143-148
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• 2009

We have fabricated Ti metal films on Cu wire substrates by using a RF magnetron sputtering method at different RF powers (0, 30 and 60 W) in a high vacuum, and we have investigated the thin film characteristics and resistivity. The ion bombardment effect is increased by the method to superimpose RF power to DC power applied to two poles of the base; thus, the thin film is deposited at sputtering gas pressures below 1 Pa. Moreover, the thin film formation of the multilayer structure becomes possible by gradually injecting the RF power, and the thin film quality is improved.

• Journal of the Korean institute of surface engineering
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• v.40 no.3
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• pp.117-124
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• 2007

The ITO films were deposited on glass substrates by RF-superimposed dc reactive magnetron sputtering and were annealed in $N_2$ vacuum furnace with temperatures in the range of $403K{\sim}573K$ for 30 minutes. Electrical, optical and structural properties of ITO films were examined with varying annealing temperatures from 403 K to 573 K. The resistivity of as-deposited ITO films was $5.4{\times}10^{-4}{\Omega}cm$ at the sputter conditions of applied RF/DC power of 200/200 W, $O_{2}$ flow of 0.2 seem and Ar flow of 0.2 seem. As a result of annealing in the temperature range of $403K{\sim}573K$, the crystallization occurred at 423 K that is lower than the crystallization temperature caused by a conventional sputtering method. And the resistivity decreased from $5.4{\times}10^{-4}{\Omega}cm\;to\;2.3{\times}10^{-4}{\Omega}cm$, the carrier concentration and mobility of ITO films increased from $4.9{\times}10^{20}/cm^3\;to\;6.4{\times}10^{20}/cm^3$, from $20.4cm^2/Vsec\;to\;41.0cm^2/Vsec$, respectively. The transmittance of ITO films in visible became higher than 90% when annealed in the temperature range of $423K{\sim}573K$. High quality ITO thin films made by RF-superimposed dc reactive magnetron sputtering and annealing in $N_2$ vacuum furnace will be applied to transparent conductive oxides of the advanced flat panel display.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.500-501
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• 2005

Aluminum doped zinc oxide films (ZnO:Al) were deposited on glass substrate by DC magnetron sputtering from a ZnO target mixed with 2 wt% $Al_2O_3$. The effects of substrate bias on the electrical properties and film structure were studied. Films deposited with positive bias have been annealed at $600^{\circ}C$ using rapid thermal anneal (RTA) process. The effects of RTA on the evolution of film microstructure are to be also studied using X-ray diffraction, transmission electron microscopy, and atomic force microscopy. Positive bias sputtering may induce lattice defects caused by electron bombardments during deposition. The as-deposited film microstructure evolves from the film with high defect density to more stable film condition. The electrical properties of the films after RTA process were also studied and the results were correlated with the evolution of film microstructures.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.258-260
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• 1993

Aluminum thin films were deposited on glass substrate using DC Magnetron Sputtering. Deposition rate, specular reflectance, and resistivity were investigated as a function of the input power, pressure, substrate temperature, and deposition time. Reflectance was reduced with increasing power, also with prolonging deposition time. Topography of the surface, which influences the properties such as electromigration, was observed from scanning electron microscope (SEM) and there was a close relation between the topography and measured reflectance.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1791-1793
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• 1998

The thin film metal electrode for PDP needs low resistivity and strong adhesion. But the sputtered copper film is weak, in the adhesion between copper and glass. In this paper, we investigated the characteristics of resistivity and adhesion about Cu thin film using Ion Beam Assisted DC Planar Magnetron Sputtering(DCPM) Device.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.849-852
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• 2007

We studied ZnO thin films deposited with DC magnetron sputtering for channel layer of TFTs. After analyzing of the basic physical and chemical properties of ZnO thin films, we fabricated a TFTunit test cell. The field effect mobility of $1.8\;cm^2/Vs$ and threshold voltage of -0.7 V were obtained.