• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2009.10a
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• pp.917-919
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• 2009

본 연구에서는 산화막 두께에 따른 20nm 이하 MOSFET의 전류-전압 특성 곡선 분석하였다. 산화물 내의 등가 포획 전하는 가우시안 함수를 사용하였다. 채널의 길이가 20nm 이하인 LDD MOSFET를 설계하여 사용하였고, 소자를 시뮬레이션 하기 위하여 실리콘 공정 디바이스 시뮬레이터인 MicroTec의 SemSim을 사용하였다. SemSim은 디바이스 시뮬레이터로써 입력 바이어스에 의해 공정 시뮬레이션인 SiDif와 디바이스 조립인 MergIC에 의해 소자를 시뮬레이션 한다. 산화막의 두께를 2nm, 3nm, 4nm로 시뮬레이션 한 결과 산화막의 두께가 얇아짐에 따라 드레인에 흐르는 전류가 증가함을 알 수 있었다.

• Journal of the Semiconductor & Display Technology
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• v.17 no.1
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• pp.45-49
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• 2018

Portable microcontroller based measurement unit is demonstrated using digital-to-analog convertor module, analog-to-digital convertor module and additional preamplifier circuit with low-budget but excellent performances. Using the designed measurement unit, the measurement of current below 1 nA with applying voltage up to 5 V is successfully carried out. With the WiFi module in microcontroller, measured data is transferred to the user's computer. To evaluate the performance of the measurement unit, the transfer curve of a commercial N-type field effect transistor was measured with the measurement unit and the results is well consistent with that measured using commercial characterization system.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.230-234
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• 2002

Metal-ferroelectric-semiconductor(MFS) capacitors by using rapid thermal annealed $LiNbO_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS capacitors. The C-V characteristics of MFS capacitors showed a hysteresis loop due to the ferroelectric nature of the $LiNbO_3$thin film. The dielectric constant of the $LiNbO_3$film calculated from the capacitance in the accumulation region in the capacitance-voltage(C-V) curve was about 25. The gate leakage current density of MFS capacitor using a platinum electrode showed the least value of $1{\times}10^{-8}\textrm{A/cm}^2$ order at the electric field of 500 kV/cm. The minimum interface trap density around midgap was estimated to be about $10^{11}/cm^2$.eV. The typical measured remnant polarization(2Pr) value was about 1.2 $\mu\textrm{C/cm}^2$, in an applied electric field of $\pm$ 300 kv/cm. The ferroelectric capacitors showed no polarization degradation up to about $10^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse in the 500 kHz.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.5
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• pp.471-480
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• 2017

A proton exchange membrane fuel cell (PEMFC) operated at $150^{\circ}C$ was evaluated by a controlling different amount of phosphoric acid (PA) to a membrane-electrode assembly (MEA) without humidification of the cells. The effects on MEA performance of the amount of PA in the cathode are investigated. The PA content in the cathodes was optimized for higher catalyst utilization. The highest value of the active electrochemical area is achieved with the optimum amount of PA in the cathode confirmed by in-situ cyclic voltammetry. The current density-voltage experiments (I-V curve) also shows a transient response of cell voltage affected by the amount of PA in the electrodes. Furthermore, this information was compared with the production variables such as hot pressing and vacuum drying to investigate those effect to the electrochemical performances.

• Progress in Medical Physics
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• v.21 no.1
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• pp.1-8
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• 2010

In this study, we evaluated the dose response of MAGAT (Methacrylic Acid Gelatin gel and THPC) normoxic polymer gel dosimeters based on the X-ray CT scanner. To perform this study, we determined the proper ratio of the gel composition and acquired X-ray scan parameters. MAGAT gel dosimeters were manufactured using MAA (MethacrylicAcid) and gelatin of various concentration, irradiated up to 20 Gy. We obtained the 20 CT images from the irradiated gel dosimeters by using on a Phillips Brilliance Big Bore CT scanner with the various scan parameters. This CT images were used to determine the $N_{CT}$-dose response, dose sensitivity and dose resolution As an amount of MAA and gelatin were increase, the slope and intercept were increase in each MAGAT gel dosimeter with various concentration of the $N_{CT}$-dose response curve. The dose sensitivity was $0.38{\pm}0.08$ to $0.859{\pm}0.1$ and increased were amount of the MAA was increased or the gelatin was decreased. However, the change of gelatin concentration was very small compare to MAA. The Dose resolution ($D_{\Delta}^{95%}$) varies considerably from 2.6 to 6 Gy, dependent on dose resolution and CT image noise. The slope and dose sensitivity was almost ident verywith the variation of the tube voltage, tube current and slice thickness in the dose response curve, but the noise (standard deviation of averamalg CT number) was decreased when the tube voltage, tube current and slice thickness are increase. The optimal MAGAT polymer gel dosimeter based on the CT were evaluated to determine the CT imaging scan parameters of the maximum tube voltage, tube current and slice thickness (commonly used in clinical) using the composition ratio of a 9% MAA, 8% gelatin and 83% water. This study could get proper composition ratio and scan parameter evaluating dose response of MAGAT normoxic polymer gel dosimeter using CT scanner.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.407-413
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• 1997

The crystallized CuPc(copper phthalocyanine) film on a p-type <100> Si substrate is prepared at the substrate temperature of $300^{\circ}C$ by thermal evaporation. X -ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the CuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). The CuPc/Si film shows the photo voltaic characteristics with a short-circuit photocurrent ($J_{sc}$) of $4.29\;mA/cm^{2}$ and an open-circuit voltage ($V_{oc}$) of 12 mA.

• Journal of the Korean Society of Industry Convergence
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• v.23 no.3
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• pp.491-498
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• 2020

Recently, In the production line of batteries, charge and discharge tests are essential to verify battery characteristics. In this case, the battery charging uses a unidirectional AC/DC converter capable of output voltage and current control, and the discharge uses a resistive load. Since this method consumes energy during discharge, it must be replaced with a bi-directional AC/DC converter system capable of charging and discharging. Although it is difficult to replace the connected inverter part of the bi-directional AC/DC converter system due to the high cost, the spread of the solar-connected inverter rapidly increases as the current solar supply business is activated, and thereby the solar-connected type Inverter prices are plunging. If it can be used as a power converter for battery discharge without program modification of the solar-powered inverter, it will have competition. In this paper, propose a new battery discharge system using a combination of a photovoltaic DC/DC simulator and photovoltaic PCS using a battery to be used as a power converter for battery discharge without program modification of a low-cost photovoltaic inverter. In addition, propose an optimal solar characteristic curve for the stable operation of PCS. The validity of the proposed system was verified using a 500[W] class solar DC/DC simulator and a solar PCS prototype.

• Journal of Radiation Protection and Research
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• v.41 no.2
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• pp.81-86
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• 2016

Background: For positron emission tomography (PET) application, cadmium zinc telluride (CZT) has been investigated by several institutes to replace detectors from a conventional system using photomultipliers or Silicon-photomultipliers (SiPMs). The spatial and energy resolution in using CZT can be superior to current scintillator-based state-of-the-art PET detectors. CZT has been under development for several years at the Korea Atomic Energy Research Institute (KAERI) to provide a high performance gamma ray detection, which needs a single crystallinity, a good uniformity, a high stopping power, and a wide band gap. Materials and Methods: Before applying our own grown CZT detectors in the prototype PET system, we investigated preliminary research with a developed discrete type data acquisition (DAQ) system for coincident events at 128 anode pixels and two common cathodes of two CZT detectors from Redlen. Each detector has a $19.4{\times}19.4{\times}6mm^3$ volume size with a 2.2 mm anode pixel pitch. Discrete amplifiers consist of a preamplifier with a gain of $8mV{\cdot}fC^{-1}$ and noise of 55 equivalent noise charge (ENC), a $CR-RC^4$ shaping amplifier with a $5{\mu}s$ peak time, and an analog-to-digital converter (ADC) driver. The DAQ system has 65 mega-sample per second flash ADC, a self and external trigger, and a USB 3.0 interface. Results and Discussion: Characteristics such as the current-to-voltage curve, energy resolution, and electron mobility life-time products for CZT detectors are investigated. In addition, preliminary results of gamma ray imaging using 511 keV of a $^{22}Na$ gamma ray source were obtained. Conclusion: In this study, the DAQ system with a CZT radiation sensor was successfully developed and a PET image was acquired by two sets of the developed DAQ system.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.126-133
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• 1992

This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.

• Journal of IKEEE
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• v.26 no.4
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• pp.633-638
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• 2022

Rencently, neuromorphic systems of spiking neural networks (SNNs) that imitate the human brain have attracted attention. Neuromorphic technology has the advantage of high speed and low power consumption in cognitive applications and processing. Resistive random-access memory (RRAM) for SNNs are the most efficient structure for parallel calculation and perform the gradual switching operation of spike-timing-dependent plasticity (STDP). RRAM as synaptic device operation has low-power processing and expresses various memory states. However, the integration of RRAM device causes high switching voltage and current, resulting in high power consumption. To reduce the operation voltage of the RRAM, it is important to develop new materials of the switching layer and metal electrode. This study suggested a optimized new structure that is the Metal/Al₂O₃/HfO_x/SWCNTs/N+silicon (MOCS) with single-walled carbon nanotubes (SWCNTs), which have excellent electrical and mechanical properties in order to lower the switching voltage. Therefore, we show an improvement in the gradual switching behavior and low-power I/V curve of SWCNTs-based memristors.