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Development of Portable Measurement Unit with Wireless Transmission by Wireless LAN for Long-term Monitoring  

Park, So Jeong (Semiconductor Research Institute, Korea University)
Park, Il-Hoo (School of Electrical Engineering, Korea University)
Moon, Young-Sun (Department of Micro/Nano Systems, Korea University)
Lee, Kook Jin (School of Electrical Engineering, Korea University)
Kim, Gyu-Tae (School of Electrical Engineering, Korea University)
Publication Information
Journal of the Semiconductor & Display Technology / v.17, no.1, 2018 , pp. 45-49 More about this Journal
Abstract
Portable microcontroller based measurement unit is demonstrated using digital-to-analog convertor module, analog-to-digital convertor module and additional preamplifier circuit with low-budget but excellent performances. Using the designed measurement unit, the measurement of current below 1 nA with applying voltage up to 5 V is successfully carried out. With the WiFi module in microcontroller, measured data is transferred to the user's computer. To evaluate the performance of the measurement unit, the transfer curve of a commercial N-type field effect transistor was measured with the measurement unit and the results is well consistent with that measured using commercial characterization system.
Keywords
Measurement Unit; Microcontroller; Wireless Transmission; Long-term Monitoring; Semiconductor Devices;
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Times Cited By KSCI : 1  (Citation Analysis)
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1 Nomura, K., Ohta, H., Takagi, A., Kamiya, T., Hirano, M., and Hosono, H., "Room-Temperature Fabrication of Transparent Flexible Thin-Film Transistors Using Amorphous Oxide Semiconductors," Nature, Vol. 432, p. 488, 2004.   DOI
2 Yang, C.-S., Smith, L., Arthur, C., and Parsons, G., "Stability of Low-Temperature Amorphous Silicon Thin Film Transistors Formed on Glass and Transparent Plastic Substrates," J. Vac. Sci. Technol. B, Vol. 18, pp. 683-689, 2000.   DOI
3 Christos, D.D. and Patrick, R.M., "Organic Thin Film Transistors for Large Area Electronics," Adv. Mater., Vol. 14, pp. 99-107, 2002.   DOI
4 Chen, T.-C., Chang, T.-C., Hsieh, T.-Y., Lu, W.-S., Jian, F.-Y., Tsai, C.-T., Huang, S.-Y. and Lin, C.-S., "Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistor," Appl. Phys. Lett., Vol.99, p. 022104, 2011.   DOI
5 Chowdhury, M.D.H., Migliorato, P., and Jang, J., "Time-Temperature Dependence of Positive Gate Bias Stress and Recovery in Amorphous Indium-Gallium-Zinc- Oxide Thin-Film-Transistors," Appl. Phys. Lett., Vol. 98, p. 153511, 2011.   DOI
6 Nomura, K., Kamiya, T., and Hosono, H., "Highly Stable Amorphous in-Ga-Zn-O Thin-Film Transistors Produced by Eliminating Deep Subgap Defects," Appl. Phys. Lett., Vol. 99, p. 053505, 2011.   DOI
7 Sung, S.-Y., Choi, J.H., Han, U.B., Lee, K.C., Lee, J.-H., Kim, J.-J., Lim, W., Pearton, S., Norton, D., and Heo, Y.-W., "Effects of Ambient Atmosphere on the Transfer Characteristics and Gate-Bias Stress Stability of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors," Appl. Phys. Lett., Vol. 96, p. 102107, 2010.   DOI
8 Suresh, A. and Muth, J., "Bias Stress Stability of Indium Gallium Zinc Oxide Channel Based Transparent Thin Film Transistors," Appl. Phys. Lett., Vol. 92, p. 033502, 2008.   DOI
9 Lee, M. and Lee, K. M., "Structural and Electrical Characteristics of IGZO thin Films deposited at Different Substrate Temperature", J. of The Korean Society of Semiconductor & Display Technology, Vol. 15, pp. 1-5, 2016.
10 Dobbelaere, T., Vereecken, P.M., and Detavernier, C., "A Usb-Controlled Potentiostat/Galvanostat for Thin- Film Battery Characterization," HardwareX, Vol. 2, pp. 34-49, 2017.   DOI