• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.137-140
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• 2001

To improve structural properties and induce higher conductivity, we have annealed emitting layer. The temperature condition was investigated by various experiment. To observe the surface morphology of emitting layer, measured the AFM and the X -ray diffraction pattern of P3HT film is shown. It is move to slightly low angles and diffraction peaks also become much sharper. After annealing of emitting layer, EL intensity and Voltage-current-luminance curve is better as compared with untreated. But PL intensity was decreased. It is known that by emission principal. After annealing of emitting layer, EL devices enhances the interface adhesion between the emissive polymer and Indium-tin-oxide electrode, which takes a critical role to improve the emitting properties of EL devices.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.361-363
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• 2005

The transient current of STN-LCD cells was measured and simulated to characterize ionic behavior in LCD cells. An experiment was performed to investigate the contribution of LC material and PI trapping effect to mobile ions in the LC layer. We observed that most of ions are trapped on the PI surface rather than stay in the LC layer in case of normal STN-LCD, and PI surface favors larger ions in general. A linear correlation of ion density and $V_50$ shift of the Transmission-Voltage (TV) curve between 30Hz and 1kHz at typical ion mobility was found.

• Journal of Electrical Engineering and Technology
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• v.1 no.4
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• pp.482-489
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• 2006

This paper presents the generalized dynamic modeling of self-excited induction generator (SEIG) using state-space approach. The proposed dynamic model consists of induction generator; self-excitation capacitance and load model are expressed in stationary d-q reference frame with the actual saturation curve of the machine. An artificial neural network model is implemented to estimate the machine magnetizing inductance based on the knowledge of magnetizing current. The dynamic performance of SEIG is investigated under no load, with the load, perturbation of load, short circuit at stator terminals, and variation of prime mover speed, variation of capacitance value by considering the effect of main and cross-flux saturation. During voltage buildup the variation in magnetizing inductance is taken into consideration. The performance of SEIG system under various conditions as mentioned above is simulated using MATLAB/SIMULINK and the simulation results demonstrates the feasibility of the proposed system.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2093-2096
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• 1999

This paper describes to access the insulation deterioration condition of the stator windings in three large turbine generators. Nondestructive tests have been carried out on stand-still generators which have been in service for 2 to 30 years. In most cases these tests include ac current increase rate($\Delta$I), delta tan delta( ${\Delta}tan{\delta}$), and maximum partial discharge(Qm). Gen. 2 show that the $tan{\delta}$ is higher than other two generators in the $tan{\delta}$-voltage curve. Partial discharge(PD) patterns were observed internal, corona and treeing discharges in large turbine generators. The PD tests were confirmed the correlation between discharge patterns and the kinds of defects.

• Journal of the Korean Chemical Society
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• v.13 no.4
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• pp.303-307
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• 1969

The ammonium salt of Nitrosophenylhydroxylamine "called cupferron", is a well-known analytical reagent, which precipitates a great number of metal ions in acid medium. The electrode reduction velocities of cupferron at droping mercury electrode in various supporting electrolytes were measured by Delahay method. The free energy of activation and transfer coefficient for a given electrode reaction are computed from the corresponding current-voltage curve. The number of electrons involved in the rate determining step of the reduction of cupferron is calculated for solutions of various pH.

• ETRI Journal
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• v.31 no.6
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• pp.675-679
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• 2009

$Ti_xSi_{1-x}O_y$ (TSO) thin films are fabricated using plasma-enhanced atomic layer deposition. The Ti content in the TSO films is controlled by adjusting the sub-cycle ratio of $TiO_2$ and $SiO_2$. The refractive indices of $SiO_2$ and $TiO_2$ are 1.4 and 2.4, respectively. Hence, tailoring of the refractivity indices from 1.4 to 2.4 is feasible. The controllability of the refractive index and film thickness enables application of an antireflection coating layer to TSO films for use as a thin film solar cell. The TSO coating layer on an Si wafer dramatically reduces reflectivity compared to a bare Si wafer. In the measurement of the current-voltage characteristics, a nonlinear coefficient of 13.6 is obtained in the TSO films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.115-115
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• 2008

본 논문에서는 최적화된 ECMP 공정을 위하여 I-V 특성 곡선과 CV법을 이용하여 패시베이션 막의 active, passive, transient, trans-passive 영역의 전기화학적 특성을 알아보았으며, Cu막의 표면 형상을 Scanning Electron Microscopy (SEM) 측정과 금속 화학적 조성을 Energy Dispersive Spectroscopy (EDS) 분석을 통해 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.544-544
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• 2008

Metal-CMP 공정시 높은 압력을 가해 줌으로 인하여 금속배선의 디싱 현상과 에로젼 현상이 발생하고 다공성의 하부층에 균열이 생기는 문제점을 개선하고자, 낮은 하력에서 금속막의 광역 평탄화를 이룰 수 있는 ECMP(Electrochemical Chemical Mechanical Polishing)가 생겨나게 되었다. 본 논문에서는 다양한 전해액의 전류-전압 특성 곡선을 비교 분석하여, 패시베이션막이 형성되는 곳을 알 수 있었고, CV와 LSV 법을 통해 전기화학적인 특성을 고찰하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.137-140
• /
• 2001

To improve structural properties and induce higher conductivity, we have annealed emitting layer, The temperature condition was investigated by various experiment. To observe the surface morphology of emitting layer, measured the AFM and the X-ray diffraction pattern of P3HT film is shown. It is move to slightly low angles and diffraction peaks also become much sharper. After annealing of emitting layer, EL intensity and Voltage-current-luminance curve is better as compared with untreated. But PL intensity was decreased. It is known that by emission principal. After annealing of emitting layer, EL devices enhances the interface adhesion between the emissive polymer and Indium-tin-oxide electrode, which takes a critical role to improve the emitting properties of EL devices.