• Title/Summary/Keyword: current-voltage curve

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Calculation of Pressure Rise in the Puffer Cylinder of EHV GCB Without Arc (무부하시의 초고압 GCB의 파퍼실린더 내부의 상승압력 계산)

  • Park, K.Y.;Song, K.D.;Choi, Y.K.;Shin, Y.J.;Song, W.P.;Kang, J.H.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1559-1561
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    • 1994
  • At present, the principle of puffer action in high current interruption is adopted in almost of the EHV(Extra High Voltage) and UHV(Ultra High Voltage) GCB(Gas Circuit Breakers). The thermal interruption capability of these GCBs critically depends on the pressure rise in the puffer cylinder at current zero. The pressure rise in the puffer cylinder depends on the puffer cylinder volume, flow passage and leakage area in the interrupter, stroke curve etc. Recently commercial CFD(Computational Fluid Dynamics ) packages have been widely adopted to calculate the pressure distribution in the interrupter. However, there are still several problems with it, e.g. very expensive price, moving boundary problem, computation time, difficulty in using the package etc. Thus, the calculation of the puffer cylinder pressure in simple and relatively correct method is essential in early stage of GCB design. In these paper, the model ing technique and computed results for EHV class GCB (HICO, 145kV 40kA and 362kV 40kA GCB) are presented and compared with available measured results.

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Evaluation on Design Factors of Electrolytic Flotation Reactor by Measuring Polarization Curve (분극곡선 측정을 통한 전해부상조의 설계인자 평가)

  • Lim, Bong-Su;Jin, Jing-Zhu;Choi, Chan-Soo
    • Journal of Korean Society on Water Environment
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    • v.23 no.2
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    • pp.244-250
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    • 2007
  • This study was carried out to obtain the optimum design factors for an eletrolytric flotation reactor. When the effluent of the leachate treatment facility was treated under the condition of 10 volts, 30 minutes, at the Al-Al electrode system; COD removal efficiency was 45%, and total phosphorus removal efficiency was 98%. The high removal efficiency was caused by the fact that phosphate was removed by leaching $Al^{3+}$ from two electrodes. The leachate containing high ammonium nitrogen concentration was treated by a batch test under the condition of 60 minutes reaction time and added chloride ion; ammonium nitrogen removal efficiency was 89%. This high efficiency was affected by added chloride ion to wastewater. To find the optimum current density and voltage of the leachate containing chloride ion (ratio of $Cl^-/NH_4-N$ is 11) a electrochemical polarization curve was used. These values were found to be $4.5mA/cm^2$ and about 2.1 V, respectively. When C-Al electrode system was used at a batch test, the total nitrogen removal efficiency was increased by 1.8 to 3.3 times, compared to Al-Al electrode system due to high $Cl_2$ gas production.

Electric Circuit Analysis for PV Array on Short-Circuit Failure of Bypass Diode in PV Module (PV모듈의 바이패스 다이오드 단락 고장 시 태양광어레이 회로 특성분석)

  • Lee, Chung-Geun;Shin, Woo-Gyun;Lim, Jong Rok;Hwang, Hye-Mi;Ju, Young-Chul;Jung, Young-Seok;Kang, Gi-Hwan;Chang, Hyo-Sik;Ko, Suk-Whan
    • Journal of the Korean Solar Energy Society
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    • v.39 no.6
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    • pp.15-25
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    • 2019
  • As the installation of photovoltaic systems increases, fire accidents of PV system grow every year. Most of PV system fires have been reported to be caused by electrical components. The majority of fire accidents occurred in combiner box, which is presumed to be short-circuit accidents due to dustproof and waterproof failures or heat deterioration of blocking diode. For this reason, the blocking diode installation became optional by revised PV combiner regulation. In this paper, according to the revised regulation, reverse current that generated by voltage mismatch was measured and analyzed in PV array without a blocking diode. The factors that cause voltage mismatch in array are assumed to be shaded PV module and short circuit failure of bypass diode. As the result of experiment, there is no reverse current to flow under shading condition in module, but reverse current flows on the failure of bypass diode in module. According to the module's I-V characteristic curve analysis, open voltage was slightly reduced due to operation of bypass diode in shading. However, it showed that open circuit voltage has decreased significantly in the failure of bypass diode. This indicates that the difference in open voltage reduction of voltage mismatch factor causes reverse current to flow.

EEPROM Charge Sensors (EEPROM을 이용한 전하센서)

  • Lee, Dong-Kyu;Jin, Hai-Feng;Yang, Byung-Do;Kim, Young-Suk;Lee, Hyung-Gyoo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.23 no.8
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    • pp.605-610
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    • 2010
  • The devices based on electrically erasable programmable read-only memory (EEPROM) structure are proposed for the detection of external electric charges. A large size charge contact window (CCW) extended from the floating gate is employed to immobilize external charges, and a control gate with stacked metal-insulator-metal (MIM) capacitor is adapted for a standard single polysilicon CMOS process. When positive voltage is applied to the capacitor of CCW of an n-channel EEPROM, the drain current increases due to the negative shift of its threshold voltage. Also when a pre-charged external capacitor is directly connected to the floating gate metal of CCW, the positive charges of the external capacitor make the drain current increase for n-channel, whereas the negative charges cause it to decrease. For an p-channel, however, the opposite behaviors are observed by the external voltage and charges. With the attachment of external charges to the CCW of EEPROM inverter, the characteristic inverter voltage behavior shifts from the reference curve dependent on external charge polarity. Therefore, we have demonstrated that the EEPROM inverter is capable of detecting external immobilized charges on the floating gate. and these devices are applicable to sensing the pH's or biomolecular reactions.

Input and Output Characteristics of Input Current Controlled Inverter Arc Welding Machine with High Efficiency (입력전류 제어형 고효율 인버터아크용접시스템의 입력 및 출력 특성연구)

  • 최규하
    • The Transactions of the Korean Institute of Power Electronics
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    • v.5 no.4
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    • pp.358-369
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    • 2000
  • Shielded metal arc welding machines with AC transformer have been widely used for thin-plate welding applications. Because of being bulky, heavy and of tap-changing property, so the SMAW's are changing to new power electronic circuits such as inverter circuit in order to reduce the system size and also to improve the welding performances at input output sides. The PWM inverter arc welding machine with diode rectifier has better output welding performances but it is has the plentiful harmonics and the lower input power factor. To solve these problems, input current-controlled scheme is considered for PWM inverter arc welding system, and then total input power factor is maintained to be more than 99%. Also a new combined control is proposed which can control both instantaeous welding output voltage and current under constant power condition, and as a result the variations of instantaneous current and voltage can be reduced to very narrow range in the V-I curve relationship, and hence the variance of welding current and voltage become so reduced. In addition the spatter generated during welding process is greatly reduced up to 70%. And the overall effiency can be improved up to 10%, which becomes higher when the load is lower.

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Carrier Lfetime and Anormal Cnduction Penomena in Silicon Epitaxial Layer-substrate Junction (Epitaxial에 의한 Si epi층의 케리어 수명과 P-N접합의 이상전도현상)

  • 성영권;민남기;김승배
    • 전기의세계
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    • v.26 no.5
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    • pp.83-89
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    • 1977
  • This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.

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On the drying out of bipolar membranes

  • Kedem, Ora;Ghermandi, Andrea;Messalem, Rami
    • Membrane and Water Treatment
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    • v.4 no.3
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    • pp.215-222
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    • 2013
  • The maximum current density that can be achieved in bipolar membrane electrodialysis is limited by the sharp increase in resistance that is experienced when the water content at the membrane interface is not adequately replenished and the membranes dry out. In this paper we show how the water content near the interface depends on the properties of the membranes. A water retaining parameter is introduced, which characterizes the thermodynamic properties of the membrane material and may be used to guide the choice of polymers for mitigation of the dry-out problem.

Analysis of Magnetic Field on Ultra High Voltage ac Transmission Line (초고압 송전선로의 자계해석에 관한 연구)

  • Lee, Joo-Youl;Ko, Eun-Young;Jung, Ho-Sung;Shin, Myung-Chul;Kweon, Myung-Hyun
    • Proceedings of the KIEE Conference
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    • 1999.07c
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    • pp.1382-1384
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    • 1999
  • Traditional magnetic field computation techniques assume that the current carrying power line conductors are straight horizontal wires. This assumption result in much errors. So this paper considerd catenary curve for the dip of real transmission line. We have data from various position at transmission line, on the earth. And as far from transmission condutor a eddy current affect of the position are con siderd.

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multi-stack gate dielectric 구조를 통한 LTPS TFT 특성

  • Baek, Gyeong-Hyeon;Jeong, Seong-Uk;Jang, Gyeong-Su;Park, Hyeong-Sik;Lee, Won-Baek;Yu, Gyeong-Yeol;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.200-200
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    • 2010
  • 이 논문에서는 field-effect mobility를 향상시키기 위해 triple-layer (SiNx/SiO2/SiOxNy stack 구조)를 gate dielectric material 로 LTPS TFTs에 적용하였다. 이는 플라즈마 처리 기법과 적층구조의 효과적인 in-situ 공정을 이용하여 interface trap과 mobile charge를 낮추어 높은 이동도의 결과를 생각하고 실험하였다. 실험은 SiO2 gatedielectric과 triple-gate dielectric의 C-V curve를 1 MHz의 주파수에서 측정하였다. 또한 Transfer characteristics를 single SiO2 gatedielectric과 triple-gate dielectric of SiNx/SiO2/SiOxNy를 STA 장비를 이용해 측정하였다. 위의 측정을 통해 threshold voltage, mobility, subtheshold swing, driving current, ON/OFF current ratio를 비교 분석하였다.

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Equivalent Circuit Analysis of Single Phase Induction Motor Considering Magnetic Saturation Characteristics (자기포화 특성을 고려한 단상유도전동기의 등가회로 해석)

  • Kim, Young Sun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.62 no.2
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    • pp.270-277
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    • 2013
  • Single phase induction motor(SPIM) is used widely because it is driven by single phase source. However, the efficiency of the motor is not good due to saturation of magnetic material. To analyze the motor accurately, the magnetic saturation characteristics should be considered in analysis of equivalent circuit. In this paper, lumped parameter of circuit are derived from multi phase induction motor using method of symmetrical coordinates. Also, we presents a method for the equivalent circuit analysis of SPIM using magnetic saturation rate. The magnetic nonlinearity is considered deriving magnetizing reactance from voltage-current saturation curve. As a results, current characteristic, torque, output and efficiency are shown through analysis of equivalent circuit. A simulation results of SPIM will be used to improve the characteristics and efficiency of motor.