• 전기전자학회논문지
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• 제27권4호
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• pp.399-404
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• 2023

본 논문에서는 3D NAND Flash memory의 O/N/O(Oxide/Nitride/Oxide) 구조와 blocking oxide를 ferroelectric material로 대체한 O/N/F(Oxide/Nitride/Ferroelectric) 구조의 current path를 분석했다. O/N/O 구조는 V_read가 인가되면 neighboring cell의 E-field로 인해 current path가 channel 후면에 형성된다. 반면 O/N/F 구조는 ferroelectric material의 polarization으로 인해 electron이 channel 전면으로 이동하여 current path가 전면에 형성된다. 또한 channel thickness와 channel length에 따른 소자 특성을 분석했다. 분석 결과 O/N/F 구조의 전면 electron current density 증가는 O/N/O 구조보다 2.8배 더 높았고 O/N/F 구조의 전면 electron current density 비율이 17.7% 높았다. 따라서 O/N/O 구조보다 O/N/F 구조에서 전면 current path가 더 효과적으로 형성된다.

• 천문학회보
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• 제41권2호
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• pp.41.3-42
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• 2016

No matter how intense magnetic flux it contains, a coronal magnetic structure has little free magnetic energy when a composing magnetic field is close to a potential field, or current-free field where no volume electric current flows. What kind of electric current system is developed is therefore a key to evaluating the activity of a coronal magnetic structure. Since the corona is a highly conductive medium, a coronal electric current tends to survive without being dissipated, so the free magnetic energy provided by a coronal electric current is normally hard to release in the corona. This work aims at clarifying how a coronal electric current system is structurally developed into a system responsible for producing a flare. Toward this end, we perform diffusive MHD simulations for the emergence of a magnetic flux tube with different twist applied to it, and go through the process of structuring a coronal electric current in a twisted flux tube emerging to form a coronal magnetic structure. Interestingly, when a strongly twisted flux tube emerges, there spontaneously forms a structure inside the flux tube, where a coronal electric current changes flow pattern from field-aligned dominant to cross-field dominant. We demonstrate that this structure plays a key role in releasing free magnetic energy via rapid dissipation of a coronal electric current, thereby producing a flare.

• Advances in nano research
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• 제3권1호
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• pp.39-47
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• 2015

We study a device structure which can be used to generate pure valley current and valley polarized current using quantum adiabatic pumping. The design of the structure allows the flexibility of changing the structure from one for pure valley current generation to one for valley polarized current generation by changing the applied electric potentials through changing the symmetry of the structure. The device is useful for the development of valleytronic devices.

• 한국소음진동공학회논문집
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• 제13권10호
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• pp.760-766
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• 2003

This paper is concerned with the eddy current damper which can be used to enhance the damping of the host structure. The operating principle of the eddy current damper is first explained in detail. The dynamic interaction between the magnets and the copper plate produces eddy current thus resulting in the damping force. By attaching the eddy current damper to the host structure, the damping of the total structure can be increased so that vibrations can be suppressed. The advantage of the eddy current damper is that it doesn't require any electronic devices and power supply The effect of the eddy current damper on the global dynamic characteristics of the structure is investigated by considering the cantilever with the eddy current damper. Experimental results show that the eddy current damper is an effective device for vibration suppression.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2003년도 춘계학술대회논문집
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• pp.136-141
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• 2003

This paper is concerned with the eddy current damper which can be used to enhance the damping of the host structure. The operating principle of the eddy current damper is first explained in detail. The dynamic interaction between the magnets and the copper plate produces eddy current thus resulting in the damping force. By attaching the eddy current damper to the host structure, the damping of the total structure can be increased so that vibrations can be suppressed. The advantage of the eddy current damper is that it doesn't require any electronic devices and power supply. The effect of the eddy current damper on the global dynamic characteristics of the structure is investigated by considering the cantilever with the eddy current damper. Experimental results show that the eddy current damper is an effective device for vibration suppression.

• 한국안전학회지
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• 제19권1호
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• pp.60-65
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• 2004

The PVC insulated flexible cords are used mainly as power supply cords of electric appliance. This electric wire is a stranded wire consisted of dozens of strands. In case stranded wires are disconnected by mechanical stress, it weakens electrically. Finally, the over current flows through stranded wires, and electrical fire occurs. In this study, we analyzed the melting properties of strands by over current, such as melting process, melting current and melting time. And we analyzed that quantity of heat for melting, a cross sectional structure, and surface structure by optical microscope and SEM. As analysis results, melting time decreased as melting current increased. And quantity of heat for melting was low, too. From the cross sectional structure of melted wire, when a melting current low and melting time long, it was found that the dendrite structure grew. However, the dendrite structure is hard to grow because growing time is not enough when a melting current high and melting time short.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.554-555
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• 2005

In this paper, we analyzed a metallurgical structure and arc properties of copper wire when the over-current flows on electric wire. From the results, The fusing current was related to the fusing time(current rising rate per second). In case of the shorter the fusing time, the fusing current was high, and the fusing time of ac type was larger than that of dc type. The copper wire was bent by the increase of current and heated, the beads were scattered around wire with a flash. We could observed the dendrite structure in 'molten wire at ac and dc current type. According as the current rising rate per second is short, the dendrite structure is distributed in surface of wire.

• 한국전기전자재료학회논문지
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• 제24권2호
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• pp.112-115
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• 2011

To stabilize the electric characteristic of Silicon Thin Film Transistor, reducing the current leakage is most important issue. To reduce the current leakage, many ideas were suggested. But the increase of mask layer also increased the cost. On this research Bird's Beak process was use to present element. Using Silvaco simulator, it was proven that it was able to reduce current leakage without mask layer. As a result, it was possible to suggest the structure that can reduce the current leakage to 1.39nA without having mask layer increase. Also, I was able to lead the result that electric characteristic (on/off current ratio) was improved compare from conventional structure.

• 한국표면공학회지
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• 제37권2호
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• pp.92-98
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• 2004

The current efficiency and the microstructure of the trivalent Cr deposits plated in flow cell system were investigated according to additives in sulfate bath and current density. The current efficiency of the deposits plated in the formic acid complexed bath was noticeably higher than that of the deposits from glycine complexed bath. The current efficiency of the deposits from the complexed baths with boric acid buffer increased linearly with current density in the range of 60-100 A/dm$^2$, while that of the deposits from the baths with both Al sulfate and mixed buffers increased parabolically with current density. The nodular crystallite size of the deposits increased with current density, and the deposits plated in low current density region had relatively smooth surface appearance with fine grains. The structure of the deposits from the complexed baths with boric acid buffer changed from amorphous structure to crystalline one with strong (110)peak with increasing current density. The deposits from the baths with both Al sulfate and mixed buffers had generally amorphous structure.

• 한국전기전자재료학회논문지
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• 제20권5호
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• pp.471-477
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• 2007

SCBF(Spherically Convergent Beam Fusion) device has been studied as a neutron source. Neutron production rate is a most important factor for the application of SCBF device and is proportional to the square of the ion current[1]. It is regarded generally that some correlations between the potential well structure and the ion current exist. In this paper, the ion current and potential distribution were calculated in a variety of grid cathode geometries using FEM-FCT method. Single potential well structure was certified inside the grid cathode. The deeper the potential well became, the higher the ion current due to the high electric field near the grid cathode became.