• Nuclear Engineering and Technology
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• v.35 no.3
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• pp.226-233
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• 2003

The discharge characteristics of a prototype ion source was investigated, which was developed and upgraded for the NBI (Neutral Beam Injection) heating system of KSTAR (Korea Superconducting Tokamak Advanced Research). The ion source was designed for the arc discharge of magnetic bucket chamber with multi-pole cusp fields. The ion source was discharged by the emission-limited mode with the control of filament heating voltage. The maximum ion density was 4 times larger than the previous discharge controlled by a space-charge-limited mode with fully heated filament. The plasma (ion) density and arc current were proportional to the filament voltage, but the discharge efficiency was inversely proportional to the operating pressure of hydrogen gas. The maximum ion density and arc current were obtained with constant arc voltage ($80{\sim}100V$), as $8{\times}10^{11}cm^{-3}$ and 1200 A, respectively. The estimated maximum beam current was about 35 A, extracted by the accelerating voltage of 80kV.

• Corrosion Science and Technology
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• v.4 no.1
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• pp.1-7
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• 2005

An alternating current (AC) corrosion on buried pipeline has been studied using coupon and ER probe. Coupons and ER probes were applied to the sites from high value of AC voltage to low value based on the survey of AC voltages on buried gas transmission pipeline over the country. Parameters such as AC current density of coupon, AC voltage, cathodic protection potential, soil resistivity and frequency were monitored continually. Corrosion induced by AC was observed even under cathodically protected condition that met cathodic protection criterion (; below -850 mV vs. CSE). Corrosion rate was affected mainly not by AC voltage but by both of frequency and AC current density. An experimental corrosion rate relation could be obtained according to effective AC current density, in which AC corrosion rate increased linearly with effective AC current density, and its slope was 0.619 in coupon method and 0.885 in ER probes.

• Journal of the Korean institute of surface engineering
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• v.52 no.2
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• pp.72-77
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• 2019

To study the characteristics of AC driven OLED, we fabricated the fluorescent OLEDs and analyzed the electroluminescence characteristics of OLEDs with AC negative voltage. The luminance and the current density of the OLED decreased, and the number and size of the dark spots increased in proportion to the duration time and level of the applied AC negative voltage. The current efficiency of the OLED was improved when high AC negative voltage was applied within a short time. When the AC negative voltage of 10 V was applied for 1 minute, the efficiency was improved by 12.4%. Also, the degradation of luminance and current efficiency due to the duration of light emission was improved in the case of OLED applied for 1 minute with 10 V AC negative voltage. These are expected as a result of the improvement of the leakage current characteristics by eliminating the short-circuit region formed by the defect of the OLED at the AC negative high voltage. As a result, the continuous application of AC negative voltage reduced the luminance and the current density of OLED, but the temporary application of AC negative voltage with the proper time and voltage could improve the efficiency and lifetime of OLED.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.37 no.2
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• pp.17-24
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• 2000

In this paper, the stress and transient currents associated with the on and off time of applied voltage were used to measure the density and distribution of high voltage stress induced traps in thin silicon oxide films. The transient currents were due to the discharging of traps generated by high stress voltage in the silicon oxides. The trap distributions were relatively uniform new both cathode and anode interface. The trap densities were dependent on the stress polarity. The stress generated trap distributions were relatively uniform the order of 1011~1021[states/eV/cm2] after a stress voltage. It appear that the stress and transient current that flowed when the stress voltage were applied to the oxide was caused by carriers tunneling through the silicon oxide by the high voltage stress generated traps.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.799-805
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• 2004

Two dimensional MEDICI simulator is used to study the characteristics of latch-up current of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics, latch-up current density, ON-voltage drop and electrical property with the variations of p-base impurity concentrations. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have the better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer p-base structure under the floating $N^+$ emitter indicates to have the better characteristics of latch-up current and breakover voltage.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1435-1438
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• 1994

The effects of Ge composition variation in $a-Si_{1-x}Ge_x:H$ alloy p-i-n solar cells on the physical properties and current density-voltage characteristics are analyzed by a new simulation modelling based on the update published experimental datas. The simulation modelling includes newly formulated density of gap density spectrum corresponding to Ge composition variation and utilizes the newly derived generation rate formulars which include the reflection coefficients and can apply to multijunction structures as well as single junction structure. The effects in $a-Si_{1-x}Ge_x:H$ single junction are analyzed through the efficiency, fill factor, open circuit voltage, short circuit current density, free carriers, trap carriers, electric field, generation rate and recombination rate. Based on the results analyzed in single junction structure, the applications to multiple junction structures are discussed and the optimal conditions reaching to a high performance are investigated.

• Journal of Magnetics
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• v.22 no.2
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• pp.227-233
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• 2017

The purpose of this study was to evaluate the effects of X-ray photon energy, tissue density, and the kernel essential for image reconstruction on the image quality by measuring HU and noise. Images were obtained by scanning the RMI density phantom within the CT device, and HU and noise were measured as follows: images were obtained by varying the tube voltages, the tube currents and eight different kernels. The greater the voltage-dependent change in the HU value but the noise was decreased. At all densities, changes in the tube current did not exert any significant influence on the HU value, whereas the noise value gradually decreased as the tube current increased. At all densities, changes in the kernel did not exert any significant influence on the HU value. The noise value gradually increased in the lower kernel range, but rapidly increased in the higher kernel range. HU is influenced by voltage and density, and noise is influenced by voltage, current, kernel, and density. This affects contrast resolution and spatial resolution.

• Journal of the Korean institute of surface engineering
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• v.57 no.1
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• pp.8-13
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• 2024

Anodizing of Al6061 alloy was conducted in two different electrolytes of 20% sulfuric acid and 8% sulfuric acid + 3 % oxalic acid solutions at a constant current or decreasing current density conditions, and its dielectric breakdown voltage was measured. The surface morphology of anodic oxide films was observed by TEM and thermal treatment was carried out at 400 ℃ for 2 h to evaluate the resistance of the anodic oxide films to crack initiation. The anodic oxide film formed in 8% sulfuric acid + 3 % oxalic acid solution showed higher dielectric breakdown voltage and better resistance to crack initiation at 400 ℃ than that formed in 20% sulfuric acid solution. The dielectric breakdown voltage increased 6 ~12% by applying decreasing current density comparing with a constant current density.

• Membrane Journal
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• v.12 no.3
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• pp.171-181
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• 2002

The parameter which determines the plateau length of current-voltage curve for ion- exchange membranes was studied at various concentrations of NaCl and different flow rates. Moreover, the feasibility of the electrodialytic removal of 0.1 M NaCl solution at various current densities was tested by assessing the electrodialysis performance parameters such as salt removal efficiency, current efficiency, energy consumption and water dissociation. The diffusion boundary layer (DBL) thickness decreased with the NaCl concentration and flow rate of fled solution and it was observed that the plateau length of current-voltage curves was related with the DBL thickness. The removal efficiency and current efficiency were not affected significantly by the current densities even at the overlimiting current region indicating that most current were passed by electrolyte, and water dissociations are not responsible for the overlimiting current. Energy consumption increased when the current density supplied exceeded the limiting current density (LCD) values, because additional energy was necessary to overcome the plateau potential. Beyond the LCD values the energy consumption required to get a certain removal efficiency was not affected by the current density applied. The result suggests that it is allowed to operate electrodialysis processes at as high as possible current density unless water-splitting does not occur.

• The Transactions of the Korean Institute of Electrical Engineers B
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• v.49 no.1
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• pp.9-14
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• 2000

When current flows through a thick conductor such, most of the current flows along outside of the conductor, which is called skin effect. This paper represents a method calculating such a current distribution in the conductor region. The conductor region is divided into some pieces and each piece has its own unknown variable, i.e. current density. The governing equation which expresses Maxwell's equation is combined with the circuit equation with voltage source. The combined equation is solved to obtain current distribution in the conductor. This algorithm is applied to EMC(Electromagnetic Casting) to calculate current density with voltage source.