• Korean Journal of Materials Research
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• v.27 no.1
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.469-472
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• 1999

CeO$_2$ thin films have used in wide applications such as SOI, buffer layer, antirflection coating, and gate dielectric layer. CeO$_2$takes one of the cubic system of fluorite structure and shows similar lattice constant (a=0.541nm) to silicon (a=0.543nm). We investigated CeO$_2$films as buffer layer material for nonvolatile memory device application of a single transistor. Aiming at the single transistor FRAM device with a gate region configuration of PZT/CeO$_2$ /P-Si , this paper focused on CeO$_2$-Si interface properties. CeO$_2$ films were grown on P-type Si(100) substrates by 13.56MHz RF magnetron sputtering system using a 2 inch Ce metal target. To characterize the CeO$_2$ films, we employed an XRD, AFM, C-V, and I-V for structural, surface morphological, and electrical property investigations, respectively. This paper demonstrates the best lattice mismatch as low as 0.2 % and average surface roughness down to 6.8 $\AA$. MIS structure of CeO$_2$ shows that breakdown electric field of 1.2 MV/cm, dielectric constant around 13.6 at growth temperature of 200 $^{\circ}C$, and interface state densities as low as 1.84$\times$10$^{11}$ cm $^{-1}$ eV$^{-1}$ . We probes the material properties of CeO$_2$ films for a buffer layer of FRAM applications.

• Wind and Structures
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• v.4 no.3
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• pp.177-196
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• 2001

At present the most popular turbulence models used for engineering solutions to flow problems are the $k-{\varepsilon}$ and Reynolds stress models. The shortcoming of these models based on the isotropic eddy viscosity concept and Reynolds averaging in flow fields of the type found in the field of Wind Engineering are well documented. In view of these shortcomings this paper presents the implementation of a non-linear model and its evaluation for flow around a building. Tests were undertaken using the classical bluff body shape, a surface mounted cube, with orientations both normal and skewed at $45^{\circ}$ to the incident wind. Full-scale investigations have been undertaken at the Silsoe Research Institute with a 6 m surface mounted cube and a fetch of roughness height equal to 0.01 m. All tests were originally undertaken for a number of turbulence models including the standard, RNG and MMK $k-{\varepsilon}$ models and the differential stress model. The sensitivity of the CFD results to a number of solver parameters was tested. The accuracy of the turbulence model used was deduced by comparison to the full-scale predicted roof and wake recirculation zone lengths. Mean values of the predicted pressure coefficients were used to further validate the turbulence models. Preliminary comparisons have also been made with available published experimental and large eddy simulation data. Initial investigations suggested that a suitable turbulence model should be able to model the anisotropy of turbulent flow such as the Reynolds stress model whilst maintaining the ease of use and computational stability of the two equations models. Therefore development work concentrated on non-linear quadratic and cubic expansions of the Boussinesq eddy viscosity assumption. Comparisons of these with models based on an isotropic assumption are presented along with comparisons with measured data.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.103-103
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• 1999

CeO2 는 cubic 구조의 일종인 CeF2 구조를 가지며 격자 상수가 0.541nm로 Si의 격자 상수 0.543nm와 거의 비슷하여 Si과의 부정합도가 0.35%에 불과하여 CeO2를 Si 기판 위에 에피택셜하게 성장시킬 수 있는 가능성이 크다. 따라서 SOI(Silicon-On-Insulator) 구조의 실현을 위하여 Si 기판위에 CeO2를 에피택셜하게 성장시키려는 많은 노력이 있었다. 또한 CeO2 는 열 적으로 대단히 안정된 물질로서 금속/강유전체/반도체 전계효과 트랜지스터(MFSFET : metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이에 완충층으로 사용되어 강유전체의 구성 원자와 Si 원자들간의 상호 확산을 방지함으로써 경계면의 특성을 향상시기키 위해 사용된다. e-beam evaporation와 laser ablation에 의한 Si 기판 위의 CeO2 격자 성장에 관한 많은 보고서가 있다. 이 방법들은 대규모 생산 공정에서 사용하기 어려운 반면 RF-magnetron sputtering은 대규모 반도체 공정에 널리 쓰인다. Sputtering에 의한 Si 기판위의 CeO2 막의 성장에 관한 보고서의 수는 매우 적다. 이 논문에서는 Ce target을 사용한 reactive rf-magnetron sputtering에 의해 Si(100) 과 Si(111) 기판위에 성장된 CeO2 의 구조 및 전기적 특성을 보고하고자 한다. 주요한 증착 변수인 증착 power와 증착온도, Seed Layer Time이 성장막의 결정성에 미치는 영향을 XRD(X-Ray Diffractometry) 분석과 TED(Transmission Electron Diffration) 분석에 의해 연구하였고 CeO2 /Si 구조의 C-V(capacitance-voltage)특성을 분석함으로써 증차된 CeO2 막과 실리콘 기판과의 계면 특성을 연구하였다. CeO2 와 Si 사이의 계면을 TEM 측정에 의해 분석하였고, Ce와 O의 화학적 조성비를 RBS에 의해 측정하였다. Si(100) 기판위에 증착된 CeO2 는 $600^{\circ}C$ 낮은 증착률에서 seed layer를 하지 않은 조건에서 CeO2 (200) 방향으로 우선 성장하였으며, Si(111) 기판 위의 CeO2 박막은 40$0^{\circ}C$ 높은 증착률에서 seed layer를 2분이상 한 조건에서 CeO2 (111) 방향으로 우선 성장하였다. TEM 분석에서 CeO2 와 Si 기판사이에서 계면에서 얇은 SiO2층이 형성되었으며, TED 분석은 Si(100) 과 Si(111) 위에 증착한 CeO2 박막이 각각 우선 방향성을 가진 다결정임을 보여주었다. C-V 곡선에서 나타난 Hysteresis는 CeO2 박막과 Si 사이의 결함때문이라고 사료된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.4
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• pp.212-215
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• 2018

The phase evolution, microstructure, and microwave dielectric properties of $Ba(Mg_{0.5-2x}Y_{2x}W_{0.5-x}Ti_x)O_3$ (x = 0.005~0.05) ceramics sintered at $1,700^{\circ}C$ for 1h were investigated. All compositions exhibited a 1:1 ordered cubic perovskite structure. The field emission scanning electron microscopy image revealed a dense microstructure in all the compositions. As the value of x increased, the lattice parameter, dielectric constant, and quality factor increased. The temperature coefficient of resonant frequency changed from $-19.6ppm/^{\circ}C$ to $-5.9ppm/^{\circ}C$ with increasing x value. The dielectric constant, quality factor, and temperature coefficient of resonant frequency of $Ba(Mg_{0.40}Y_{0.10}W_{0.45}Ti_{0.05})O_3$ were 21.7, 132,685 GHz, and $-5.9ppm/^{\circ}C$, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.67-67
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• 2000

CeO2는 cubic 구조의 일종인 CaR2 구조를 가지고 있으며 격자상수가 Si의 격장상수와 매우 비슷하여 Si 기판위에 에피텍셜하게 성장할 수 있는 가능성이 매우 크다. 따라서 SOI(silicon-on-insulator)구조의 실현을 위하여 Si 기판위에 CeO2 박막을 에피텍셜하게 성장시키려는 많은 노력이 있어왔다. 또한 metal-ferroelectric-semiconductor field effect transistor)에서 ferroelectric 박막과 Si 기판사이의 완충층으로 사용된다. 이러한 CeO2의 응용을 위해서는 Si 기판 위에 성장된 CeO2 박막의 방위성 및 CeO2/Si 구조의 전기적 특성을 알아보는 것이 매우 중요하다. 본 연구에서는 Si(100) 기판위에 CeO2(200)방향으로 성장하는 박막과 EcO2(111) 방향으로 성장하는 박막을 rf magnetron sputtering 방법으로 증착하여 각각의 구조적, 전기적 특성을 분석하였다. RCA 방법으로 세정한 P-type Si(100)기판위에 Ce target과 O2를 사용하여 CeO2(200) 및 CeO2(111)박막을 증착하였다. 증착후 RTA(rapid thermal annealing)방법으로 95$0^{\circ}C$, O2 분위기에서 5분간 열처리를 하였다 이렇게 제작된 CeO2 박막의 구조적 특성을 XRD(x-ray diffraction)방법으로 분석하였고, Al/CeO2/Si의 MIS(metal-insulator-semiconductor)구조를 제작하여 C-V (capacitance-voltage), I-V (current-voltage) 특성을 분석하였으며 TEM(transmission electron microscopy)으로 증착된 CeO2막과 Si 기판과의 계면 특성을 연구하였다. C-V특성에 있어서 CeO2(111)/Si은 CeO2(111)의 두께가 증가함에 따라 hysteresis windows가 증가한 방면 CeO2(200)/Si은 hysteresis windows가 아주 작을뿐만 아니라 CeO2(200)의 두께가 증가하더라도 hysteresis windos가 증가하지 않았다. CeO2(111)/Si과 CeO2(200)/Si의 C-V 특성의 차이는 CeO2(111)과 CeO2(200)이 Si 기판에 의해 받은 stress의 차이와 이에 따른 defect형성의 차이에 의한 것으로 사료된다.

• Korean Journal of Materials Research
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• v.22 no.7
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• pp.342-345
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• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.

• Journal of Magnetics
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• v.6 no.2
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• pp.47-52
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• 2001

We present the magnetisation reversal dynamics of epitaxial Fe thin films grown on GaAs(001) and InAs(001) studied as a function of field sweep rate in the range 0.01-160 kOe/s using magneto-optic Kerr effect (MOKE). For 55 and 250 ${\AA}$ Fe/GaAs(001), we find that the hysteresis loop area A follows the scaling relation $A\propto H_{\alpha} \;with\; \alpha=0.03\sim0.05$ at low sweep rates and 0.33~0.40 at high sweep rates. For the 150${\AA}$ Fe/InAs(001) film, $\alpha$is found to be ~0.02 at low sweep rates and ~0.17 at high sweep rates. The differing values of $\alpha$ are attributed to a change of the magnetisation reversal process with increasing sweep rate. Domain wall motion dominates the magnetisation reversal at low sweep rates, but becomes less significant with increasing sweep rate. At high sweep rates, the variation of the dynamic coercivity $H_c{^*}$ is attributed to domain nucleation dominating the reversal process. The results of magnetic relaxation studies for easy-axis reversal are consistent with the sweeping of one or more walls through the entire probed region (~100$\mu m$). Domain images obtained by scanning Kerr microscopy during the easy cubic axis reversal process reveal large area domains separated by zigzag walls.

• Korean Journal of Materials Research
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• v.32 no.10
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• pp.425-428
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• 2022

In this study, Y₃Al₅O₁₂:Eu³⁺ red phosphors were synthesized at different temperatures using a solid state reaction method. The crystal structures, surface and optical properties of the Y₃Al₅O₁₂:Eu³⁺ red phosphors were investigated using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), and photoluminescence (PL) analyses. From XRD results, the crystal structure of the Y₃Al₅O₁₂:Eu³⁺ red phosphors was determined to be cubic. The maximum emission spectra were observed for the Y₃Al₅O₁₂:Eu³⁺ red phosphor prepared by annealing for 4h at 1,700 ℃. The 565~590 nm photoluminescent spectra of the Y₃Al₅O₁₂:Eu³⁺ red phosphors is associated with the ⁵D₀ → ⁷F₂ magnetic dipole transition of the Eu³⁺ ions. The intensity of the photoluminescent spectra in the red phosphors is more dominant for the magnetic dipole transition than the electric dipole transition with increasing annealing temperature. The International Commission on Illumination (CIE) coordinates of Y₃Al₅O₁₂:Eu³⁺ red phosphors prepared by 1,700 ℃ annealing temperature are X = 0.5994, Y = 0.3647.

• Korean Journal of Remote Sensing
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• v.27 no.5
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• pp.613-623
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• 2011

This study assessed the feasibility to apply Two-band and Three-band reflectance models for chlorophyll-a estimation in turbid productive waters whose scale is smaller and narrower than ocean using a high spatial resolution image. Those band ratio models were successfully applied to analyzing chlorophyll-a concentrations of ocean or coastal water using Moderate Imaging Spectroradiometer(MODIS), Sea-viewing Wide Field-fo-view Sensor(SeaWiFS), Medium Resolution Imaging Spectrometer(MERIS), etc. Two-band and Three-band models based on band ratio such as Red and NIR band were generally used for the Chl-a in turbid waters. Two-band modes using Red and NIR bands of RapidEye image showed no significant results with $R^2$ 0.38. To enhance a band ratio between absorption and reflection peak, We used red-edge band(710 nm) of RapidEye image for Twoband and Three-band models. Red-RE Two-band and Red-RE-NIR Three-band reflectance model (with cubic equation) for the RapidEye image provided significance performances with $R^2$ 0.66 and 0.73, respectively. Their performance showed the 'Approximate Prediction' with RPD, 1.39 and 1.29 and RMSE, 24.8, 22.4, respectively. Another three-band model with quadratic equation showed similar performances to Red-RE two-band model. The findings in this study demonstrated that Two-band and Three-band reflectance models using a red-edge band can approximately estimate chlorophyll-a concentrations in a turbid river water using high-resolution satellite image. In the distribution map of estimated Chl-a concentrations, three-band model with cubic equation showed lower values than twoband model. In the further works, quantification and correction of spectral interferences caused by suspended sediments and colored dissolved organic matters will improve the accuracy of chlorophyll-a estimation in turbid waters.