• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.274-277
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• 2000

Thin Film Transistor(TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature(500$^{\circ}C$) Metal-Induced Lateral Crystallization(MILC) furnace annealing and high -temperature (700$^{\circ}C$) rapid thermal annealing leads to the improvement of the material quality The TFTs measured with this two-step annealing material exhibit better characteristics than those obtained by using conventional MILC furnace annealing.

• Journal of Pharmaceutical Investigation
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• 제13권1호
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• pp.1-9
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• 1983

The effect of humidity on crystallization and polymorphic transformation of hydrous aluminum oxide under various humidity at $37^{\circ}$ was examined by means of X-ray diffraction, scanning electron micrograph, IR spectra and DTA. The humidity was an important factor influencing crystallization of hydrous aluminum oxide. The growth or crystal was strongly accelerated by humidity. The aging process is assumed that it is composed of two seperate steps, an increase of the diffraction around $36{\sim}42^{\circ}$, and an appearance and its development of the peak at $18{\sim}20^{\circ}$ of $2{\theta}$ value. The former is considered to be nucleation and the latter correspond to the growth period on crystallization. The crystalline form of aging products was various depending on the degree of humidity, directly it leads to the eventual formation of bayerite in more than 72%, $b{\"{o}}hmite$ in 50% and resembled to Nordstandite in 0% relative humidity, respectively but once formed, it was mostly stable in each surroundings and does not transform to the other more stable form in solid state even after aging for five years. The mechanism responsible for aging is further polymerization process of six-membered rings by deprotonation-dehydration reaction in which positively charged polynuclear hydroxy aluminum complexes formed in the presence of moisture are joined at their edges by double hydroxide bridges.

• 한국재료학회지
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• 제12권12호
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• pp.924-929
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• 2002

To recycle waste materials, this work was focused on development of glass-ceramic from incinerator fly ash with a large content of Cl and its physical property was evaluated. In the process, water washing as a pre-treatment before melting the fly ash was used to remove large amount of Cl component in the ash and to reduce melting temperature. As a result, glass was obtained at below $100^{\circ}C$ compared to the melting temperature before washing the ash. Also, internal crystallization occurred under single stage heat treatment (at $850-950^{\circ}C$ for 20-340min) without adding other materials into the ash. It was shown that the glass-ceramic was composed of four crystals, diopside, anorthite, akermanite, and unknown phase. Hardness of 8.3GPa was found in the glass-ceramic, which is a high value compared to reported others. Thus, the present process suggests that a good glass-ceramic produced from an incinerator ash could be applicable for structural materials in terms of economic and environmental points.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2052-2054
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• 2005

TFT-LCD requires to use poly silicon for High resolution and High integration. Thin film make of Poly silicon on the excimer laser-induced crystallization of PECVD(plasma-enhanced chemical vapor deposition)-grown amorphous silicon. In the thin film hydrogen affects to a device performance from bad elements like eruption, void and etc. So dehydrogenation prior to laser exposure was necessary. In this study, use RTP(Rapid Thermal Process) at various temperature from $670^{\circ}C$ to $750^{\circ}C$ and fabricate poly-silicon. it propose optimized RTP window to compare grain size to use poly silicon's SEM pictures and crystallization to analyze Raman curved lines.

• Journal of Welding and Joining
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• 제21권1호
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• pp.107-113
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• 2003

Joining of $Si_3N_4$ to $Si_3N_4$ with crystallized glass solder was studied. $SiO_2-Al_2O_3-MgO$ glass with $P_2O_5$ as a crystallizing reagent was used as a solder. To improve the hish temperature toughness of joined specimen, two stage heat treatment was applied to Joined sample for the crystallization of joined layer, Two factors, i.e. thickness of soldered layer and crystallization were taken and thier effects on joining strength were investigated by a SEM-EDX observation of joined interface and bending strength both at room and elevated temperatures. Obtained results are summarized as follows: (1) Nitrogen diffused from $Si_3N_4$ to solder during the Joining process. Average amount of nitrogen in soldered layer depended on the thickness of the soldered layer and increased with decrease of the thickness. (2) Joining strength of the specimen having a thinner soldered layer was stronger than that of thicker layer. This can be mainly attributed to the difference of the nitrogen content in the soldered layer. (3) Higher content of nitrogen in solder brought forth higher viscosity of the solder. Hence the crystallization of the solder become more difficult in thinner layer of the solder than thicker one. (4) Thus, the effect of crystallization was evaluated mostly by the thicker layer specimen. Crystallization of soldered layer improved markedly the fracure strength of joining at higher temperatures than the softening temperature of glass solder.

• Macromolecular Research
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• 제12권1호
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• pp.1-10
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• 2004

The structural changes occurring in the isothermal crystallization processes of polyethylene (PE), poly-oxymethylene (POM), and vinylidene fluoridetrifluoroethylene (VDFTrFE) copolymer have been reviewed on the basis of our recent experimental data collected by the time-resolved measurements of synchrotron-sourced wide-angle (WAXS) and small-angle X-ray scatterings (SAXS) and infrared spectra. The temperature jump from the melt to a crystallization temperature could be measured at a cooling rate of 600-1,000 $^{\circ}C$/min, during which we collected the WAXS, SAXS, and infrared spectral data successfully at time intervals of ca. 10 sec. In the case of PE, the infrared spectral data clarified the generation of chain segments of partially disordered trans conformations immediately after the jump. These segments then became transformed into more-regular all-trans-zigzag forms, followed by the formation of an orthorhombic crystal lattice. At this stage, the generation of a stacked lamella structure having an 800-${\AA}$-long period was detected in the SAXS data. This structure was found to transfer successively to a more densely packed lamella structure having a 400-${\AA}$-long period as a result of the secondary crystallization of the amorphous region in-between the original lamellae. As for POM, the formation process of a stacked lamella structure was essentially the same as that mentioned above for PE, as evidenced from the analysis of SAXS and WAXS data. The observation of morphology-sensitive infrared bands revealed the evolution of fully extended helical chains after the generation of lamella having folded chain structures. We speculate that these extended chains exist as taut tie chains passing continuously through the neighboring lamellae. In the isothermal crystallization of VDFTrFE copolymer from the melt, a paraelectric high-temperature phase was detected at first and then it transferred into the ferroelectric low-temperature phase at a later stage. By analyzing the reflection profile of the WAXS data, the structural ordering in the high-temperature phase and the ferroelectric phase transition to the low-temperature phase of the multi-domain structure were traced successfully.

• 폴리머
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• 제32권5호
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• pp.483-488
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• 2008

광학용 폴리카보네이트 필름 제조에 사용되는 methylene chloride/1,3-dioxolane 혼합 용매가 폴리카보네이트 결정화에 미치는 영향에 대하여 살펴보았다. Methylene chloride에 환경 친화성 용매인 1,3-dioxolane을 혼합한 co-solvent를 용액 캐스팅 PC 필름 가공의 용매로 사용하는 경우, 혼합된 1,3-dioxolane에 의하여 필름 건조 시 용매 제거 속도가 느려져 PC필름의 결정화를 유발시킴을 알 수 있었다. 이러한 결정화 현상은 용매 조성비 및 용매 건조 온도를 조절하여 용매 제거 속도를 증가시킴으로 최소화할 수 있음을 확인하였다. PC의 결정화는 PC 필름의 표면 거칠기를 증가시키고 이는 필름의 광학 특성을 감소시키는 요인으로 작용함을 알 수 있었다.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.107-109
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• 2000

The crystallization process and the electrical properties of amorphous tin-doped indium oxide (ITO) films have been studied in contrast with those of undoped indium oxide (IO) films. Amorphous ITO and IO films were prepared by magnetron sputtering succeeded by annealing in the air at various temperatures. ITO films showed higher crystallization temperature compared with that of IO films, suggesting an excess free energy caused by the repulsion between the active donors ($Sn^{4+}$). The analysis of the electrical properties alternated with the phased annealing of films provided essential information for understanding the conduction mechanisms of ITO. It was also revealed that the amorphous IO/ITO films showed oxidation around $100^{\circ}C$ in contrast with crystalline IO/ITO films with the oxidation temperature above $200^{\circ}C$.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2003년도 ICCAS
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• pp.1196-1200
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• 2003

The degree of supersaturation is an important measure for the operation of crystallization processes, because it is directly related to the control of crystal size distribution and shape. A conventional technique utilizing solution composition and temperature has a variety of problems caused from the measurement error and the handling of analyzing samples. A monitoring system of the supersaturation using a quartz crystal sensor is proposed here, and its performance is examined applying different manipulations of coolant temperature. The experimental outcome and photographic examination indicate that the measurements of resonant frequency and resistance of the sensor can be used for the prediction of the formation and growth of solid crystal from the crystallization process. The monitoring system eliminates the intrinsic error source of the conventional system to give the improved measurement and on-line application availability.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권2호
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• pp.166-171
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• 2016

Nickel silicide is main issue in Polycrystalline silicon Thin Film Transistor (TFT) which is made by Metal Induced Lateral Crystallization (MILC) method. This Nickel silicide acts as a defect center, and this defect is one of the biggest reason of the high leakage current. In this research, we fabricated polycrystalline TFTs with novel method called Edge Cut (EC). With this new fabrication method, we assumed that nickel silicide at the edge of the channel region is reduced. Electrical properties are measured and trap state density also calculated using Levinson & Proano method.