• 폴리머
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• 제25권6호
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• pp.833-839
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• 2001

광산란 장치를 이용하여 메탈로센 촉매 하에 제조된 메탈로센 선형 저밀도 폴리에틸렌의 결정화거동을 Ziegler-Natta 촉매에 의하여 제조된 선형 저밀도 폴리에틸렌과 비교하여 보았다. 특히 branching수와 길이 그리고 공단량체의 함량이 결정화 거동에 미치는 영향을 중점적으로 살펴보았다. 같은 수의 branching 수를 가지고 있는 메탈로센 선형 저밀도 폴리에틸렌은 기존의 선형 저밀도 폴리에틸렌에 비하여 결정화를 시작하기 위한 induction time이 길어짐을 알 수 있으나 구정의 성장속도는 두 경우가 유사함을 확인하였다. 메탈로센 선형 저밀도 폴리에틸렌의 branching 수를 감소시킬 경우 induction time과 구정성장속도가 모두 빨라짐을 알 수 있었다. 또한 일반적으로 최대 구정의 크기는 branching 수에 관계없이 메탈로센 선형 저밀도 폴리에틸렌이 기존의 선형 저밀도 폴리에틸렌에 비하여 커짐을 알 수 있었다.

• 전자공학회논문지D
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• 제34D권4호
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• pp.33-39
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• 1997

The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.

• KSBB Journal
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• 제20권3호
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• pp.164-176
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• 2005

In bioengineering field, current academic trends and informations on crystallization technology for bioproduct separation were summarized. It is essential for utilizing the crystallization technology to understand the fundamental phenomena of crystallization of crystal nucleation, crystal growth, crystal agglomeration and population balance for the design of crystallizers. In general, the crystal nucleation that the crystalline solids occur from the solution is analyzed by Gibb's free energy change in the aspect of thermodynamics and in the present paper the crystal nucleation models based on the above thermodynamics are summarized by their key characteristics. The crystal growth and agglomeration, which have been studied over 50 years and are essential phenomena for separation technology, are reviewed from their basic concept to most leading edge trend of researches. In the material and population balances for the designs of crystallization separation process, the analysis of crystallizers is summarized. Thereon, the present review paper will academically contribute the understanding the crystallization phenomena and the design of the crystallization separation process.

• 한국재료학회지
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• 제19권4호
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• pp.203-206
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• 2009

$Sn_XSe_{100-X}$ (15|X|30) alloys have been studied to explore their suitability as phase change materials for nonvolatile memory applications. The phase change characteristics of thin films prepared by a Radio Frequency (RF) magnetron co-sputtering system were analyzed by an X-ray diffractometer and 4-point probe measurement. A phase change static tester was also used to determine their crystallization under the pulsed laser irradiation. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The amorphous state showed sheet resistances five orders of magnitude higher than that of the crystalline state in $Sn_XSe_{100-X}$ (x = 15, 20, 25, 30) films. In the optimum composition, the minimum time of $Sn_XSe_{100-X}$ alloys for crystallization was 160, 140, 150, and 30ns at 15mW, respectively. The crystallization temperature and the minimum time for crystallization of thin films were increased by increasing the amount of Sn, which is correlated with the activation energy for crystallization.

• International Journal of Fluid Machinery and Systems
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• 제7권2호
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• pp.54-59
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• 2014

Particle Image Velocimetry combined with developed image processing method is adopted to study the liquid-solid two phase flow in the centrifugal pump impeller with crystallization phenomenon. The tracer particle is used to follow the liquid phase, which has the diameter between 8 to $12{\mu}m$. The crystal particle precipitates from the sodium sulfate solution does change the wavelength of the laser, and which has great laser scattering characteristics. The diameter of the crystal particle is larger than $20{\mu}m$. Through calculating the diameter of the particles in the image, the tracer particle and the crystal particle can be distinguished. By analyzing the experimental result, the following conclusion has been obtained. During the delay period, there is not any crystal particle and the pump performance has not been changed. As the crystallization process begins, the crystal nuclei appears from the supersaturation solution and grows larger with temperature decreasing, which has the tendency of moving towards the pressure side. The characteristics of liquid-solid two phase flow with crystallization phenomenon in the pump are obtained according to analysis of experimental results, and some guiding advices are presented to mitigate the crystallization phenomenon in pump impeller.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.553-556
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• 2009

We investigated an application of supramolecular protein, and demonstrated the metal induced lateral crystallization utilizing ferritins with Ni nanoparticles, named the "bio-nano-crystallization". So far, this method has required long time, because of this method condition based on the conventional solid phase crystallization. In this study, we applied the pulsed rapid thermal annealing to bio-nanocrystallization. As a result, we succeeded in the crystallization for a short time. We found that the TFTs characteristics were improved with decrease metal impieties in poly-Si thin films by this method.

• 폴리머
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• 제25권6호
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• pp.840-847
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• 2001

메탈로센 촉매로 제조된 메탈로센 선형 저밀도 폴리에틸렌(m-LLDPE)과 Ziegler-Natta 촉매에 의하여 제조된 선형 저밀도 폴리에틸렌(LLDPE) 블렌드의 결정화 거동을 고찰하여 보았다. 특히 블렌딩이 이들의 결정화 induction time 및 구정성장 속도 그리고 최대 구정의 크기에 미치는 영향을 중점적으로 살펴보았다. LLDPE/LDPE 블렌드와는 달리 LLDPE에 m-LLDPE를 블렌딩할 경우, 각각의 결정 형성 대신 하나의 결정이 형성됨을 확인하였으며 induction time이 현저히 짧아짐을 알 수 있었다. 하지만 이러한 감소는 블렌드의 조성비에는 크게 영향을 받지 않았다. 또한 블렌딩에 의하여 LLDPE의 구정성장 속도가 증가함을 확인할 수 있었으며, 구정의 최대 크기는 induction time과 구정성장 속도가 LLDPE에 미치는 영향에 따라 달라짐을 알 수 있었다.

• 한국전기전자재료학회논문지
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• 제21권1호
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• 한국세라믹학회지
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• 제43권4호
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• pp.230-234
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• 2006

Metal-Induced Crystallization (MIC) of amorphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after Aluminum-Induced Crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1263-1265
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• 2007

The electrical characteristics of low temperature poly-Si (LTPS) thin-film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-Si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gated-diodes and capacitance-voltage measurements