• Polymer(Korea)
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• v.25 no.6
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• pp.833-839
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• 2001

The crystallization characteristics of metallocene linear low density polyethylene was investigated by small angle light scattering and comparison was made with Ziegler-Natta linear low density polyethylene. The special efforts were made to find out the effects of branching number, length of branching and co-monomer content of m-LLDPE on the crystallization behavior of m-LLDPE. It was found that m-LLDPE has longer induction time to start crystallization from the amorphous state than that of conventional LLDPE with similar branching number, but the rate of crystallization seems not change much in both LLDPEs. Lowering of branching number in m-LLDPE resulted in both increasing of rate of crystallization and reducing induction time to crystallize. In general, the maximum size of spherulites of m-LLDPE is bigger than that of conventional LLDPE.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.33-39
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• 1997

The crystallization temperature of an amorphous silicon (a-Si) can be lowered down to 400.deg. C by a new method : Double-metal induced lateral crystallization (DMILC). The a-Si film was laterally crystallized from Ni and Pd deposited area, and its lateral crystallization rate reaches up to 0.2.mu.m/hour at that temperature and depends on the overlap length of Ni and Pd films; the shorter the overlap length, the faster the rate. Poly-Silicon thin film transistors (poly-Si TFT's) fabricated by DMILC at 400.deg. C show a field effect mobility of 38.5cm$^{3}$/Vs, a minimum leakage current of 1pA/.mu.m, and a slope of 1.4V/dec. The overlap length does not affect the characteristics of the poly-Si TFT's, but determines the lateral crystallization rate.

• KSBB Journal
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• v.20 no.3
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• pp.164-176
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• 2005

In bioengineering field, current academic trends and informations on crystallization technology for bioproduct separation were summarized. It is essential for utilizing the crystallization technology to understand the fundamental phenomena of crystallization of crystal nucleation, crystal growth, crystal agglomeration and population balance for the design of crystallizers. In general, the crystal nucleation that the crystalline solids occur from the solution is analyzed by Gibb's free energy change in the aspect of thermodynamics and in the present paper the crystal nucleation models based on the above thermodynamics are summarized by their key characteristics. The crystal growth and agglomeration, which have been studied over 50 years and are essential phenomena for separation technology, are reviewed from their basic concept to most leading edge trend of researches. In the material and population balances for the designs of crystallization separation process, the analysis of crystallizers is summarized. Thereon, the present review paper will academically contribute the understanding the crystallization phenomena and the design of the crystallization separation process.

• Korean Journal of Materials Research
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• v.19 no.4
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• pp.203-206
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• 2009

$Sn_XSe_{100-X}$ (15|X|30) alloys have been studied to explore their suitability as phase change materials for nonvolatile memory applications. The phase change characteristics of thin films prepared by a Radio Frequency (RF) magnetron co-sputtering system were analyzed by an X-ray diffractometer and 4-point probe measurement. A phase change static tester was also used to determine their crystallization under the pulsed laser irradiation. X-ray diffraction measurements show that the transition in sheet resistance is accompanied by crystallization. The amorphous state showed sheet resistances five orders of magnitude higher than that of the crystalline state in $Sn_XSe_{100-X}$ (x = 15, 20, 25, 30) films. In the optimum composition, the minimum time of $Sn_XSe_{100-X}$ alloys for crystallization was 160, 140, 150, and 30ns at 15mW, respectively. The crystallization temperature and the minimum time for crystallization of thin films were increased by increasing the amount of Sn, which is correlated with the activation energy for crystallization.

• International Journal of Fluid Machinery and Systems
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• v.7 no.2
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• pp.54-59
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• 2014

Particle Image Velocimetry combined with developed image processing method is adopted to study the liquid-solid two phase flow in the centrifugal pump impeller with crystallization phenomenon. The tracer particle is used to follow the liquid phase, which has the diameter between 8 to $12{\mu}m$. The crystal particle precipitates from the sodium sulfate solution does change the wavelength of the laser, and which has great laser scattering characteristics. The diameter of the crystal particle is larger than $20{\mu}m$. Through calculating the diameter of the particles in the image, the tracer particle and the crystal particle can be distinguished. By analyzing the experimental result, the following conclusion has been obtained. During the delay period, there is not any crystal particle and the pump performance has not been changed. As the crystallization process begins, the crystal nuclei appears from the supersaturation solution and grows larger with temperature decreasing, which has the tendency of moving towards the pressure side. The characteristics of liquid-solid two phase flow with crystallization phenomenon in the pump are obtained according to analysis of experimental results, and some guiding advices are presented to mitigate the crystallization phenomenon in pump impeller.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.553-556
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• 2009

We investigated an application of supramolecular protein, and demonstrated the metal induced lateral crystallization utilizing ferritins with Ni nanoparticles, named the "bio-nano-crystallization". So far, this method has required long time, because of this method condition based on the conventional solid phase crystallization. In this study, we applied the pulsed rapid thermal annealing to bio-nanocrystallization. As a result, we succeeded in the crystallization for a short time. We found that the TFTs characteristics were improved with decrease metal impieties in poly-Si thin films by this method.

• Polymer(Korea)
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• v.25 no.6
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• pp.840-847
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• 2001

The crystallization characteristics of metallocene linear low density polyethylene (m-LLDPE)/linear low density polyethylene (LLDPE) blends were investigated. The effect of blending on the induction time for crystallization, spherulites growth rate, and maximum size of spherulites was mainly considered in this study. The formation of separate crystal which is well known crystallization behavior in LLDPE/LDPE blend was not found in m-LLDPE/LLDPE blends. The blending m-LLDPE to LLDPE caused the dramatic decrease in the induction time of m-LLDPE/LLDPE blends but it seems that the blend composition shows less effect on the induction time. Lower branching number in m-LLDPE resulted in the increasing of spherulites growth rate and the maximum size of spherulites is depend upon both the induction time and spherulites growth rate of LLDPE component affected by m-LLDPE.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.1
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• pp.1-4
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• 2008

The electrical characteristics of polycrystalline silicon (poly-Si) thin film transistor (TFT) crystallized by excimer laser annealing (ELA) method were evaluated, The polycrystalline silicon thin-film transistor (poly-Si TFT) has higher electric field-effect-mobility and larger drivability than the amorphous silicon TFT. However, to poly-Si TFT's using conventional processes, the temperature must be very high. For this reason, an amorphous silicon film on a buried oxide was crystallized by annealing with a KrF excimer laser (248 nm)to fabricate a poly-Si film at low temperature. Then, High permittivity $HfO_2$ of 20 nm as the gate-insulator was deposited by atomic layer deposition (ALD) to low temperature process. In addition, the solid phase crystallization (SPC) was compared to the ELA method as a crystallization technique of amorphous-silicon film. As a result, the crystallinity and surface roughness of poly-Si crystallized by ELA method was superior to the SPC method. Also, we obtained excellent device characteristics from the Poly-Si TFT fabricated by the ELA crystallization method.

• Journal of the Korean Ceramic Society
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• v.43 no.4 s.287
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• pp.230-234
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• 2006

Metal-Induced Crystallization (MIC) of amorphous silicon (a-Si) using aluminum and nickel as catalysts were performed with a variation of metal thickness and temperature. Raman results showed that the crystallization of a-Si depended on the thickness of aluminum while not on nickel. Nickel that forms silicide nodules during annealing simply catalyzed the formation of crystalline silicon (c-Si) while aluminum was consumed and transferred during MIC, which resulted in more complex microstructural characteristics. Crystalline silicons after NIC had elongated shape with a twin along the long axis. Morphological change after Aluminum-Induced Crystallization (AIC) showed more equiaxial grains. The nucleation and growth mechanism of AIC was discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1263-1265
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• 2007

The electrical characteristics of low temperature poly-Si (LTPS) thin-film transistors (TFT) with channel parallel and perpendicular to the direction of lateral growth were studied. The poly-Si film was crystallized using sequential lateral solidification (SLS) laser crystallization technique. The channel orientation dependent turn-on characteristics were investigated by using gated-diodes and capacitance-voltage measurements