• 한국전자현미경학회:학술대회논문집
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• 2005.05a
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• pp.27-27
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• 2005

• Proceedings of the Korean Fiber Society Conference
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• 2003.10b
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• pp.52-54
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• 2003

Poly(vinyl alcohol) (PVA) obtained by the saponification of poly(vinyl ester) is a linear semicrystalline polymer; these polymers have been widely used as fibers for clothes and industries, binders, films, membranes, medicines for drug delivery system, and cancer cell-killing embolic materials. PVA fibers have high tensile and compressive strength, tensile modulus, and abrasion resistance because of the highest crystalline lattice modulus. (omitted)

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2002.10a
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• pp.623-628
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• 2002

A meshfree formulation for the calculation of energy band structure is presented. The conventional meshfree shape function is modified to handle the periodicity of Bravais lattice, and applied to the calculation of real-space electronic-band structure. Numerical examples include the Kronig-Penney model potential and the empirical pseudopotentials of diamond and zinc-blonde semiconductors. Results demonstrate that the meshfree method be a promising one as a real-space technique for the calculations of diverse physical band structures.

• Journal of the Korean Ceramic Society
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• v.39 no.6
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• pp.589-593
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• 2002

The single crystalline thick fi1ms of Bi:Y$_3$Fe$_{5}$ $O_{12}$(Bi:YIG) were grown on (GdCa)$_3$(GaMgZr)$_{5}$ $O_{12}$(SGGG) by Liquid Phase Epitaxy (LPE). The changes of lattice mismatch and Bi concentration were investigated in the thick film growth as a function of PO/Bi$_2$ $O_3$ molar ratio, with keeping constant of substrate rotation speed, supercooling and growth time. It was grown that the lattice constant of the garnet single crystalline thick films and Bi content increased with decreasing of PO/Bi$_2$ $O_3$ molar ratio. Bi concentration decreased with increasing of the film thickness.

• Journal of the Korean Ceramic Society
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• v.40 no.7
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• pp.672-676
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• 2003

The single crystalline thick films of Y$_3$Fe$\sub$5/O$\sub$12/(YIG), Y$_3$Fe$\sub$5/O$\sub$12/(Bi:YIG), (TbBi)$_3$(FeAlGa)$\sub$5/O$\sub$12/ (TbBi:YIG) were grown on (GdCa)$_3$(GaMgZr)$\sub$5/O$\sub$12/ (SGGG) by Liquid Phase Epitaxy (LPE). The change of lattice mismatch, Bi concentration, characteristic of magnetic and surface morphology were investigated in the thick film growth as a function of species and amount of chemical element, while substrate rotation speed, supercooling and growth time were kept constant. It was observed that the lattice constant of garnet single crystalline thick films of TbBi:YIG (12.500 ${\AA}$) is closed to the one of the substrate (12.496 ${\AA}$). Besides magnetic field of saturation exhibits excellent results (150 Oe).

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.6
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• pp.314-320
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• 2002

Three different ZnO nanomaterials (nanobelts, nanorods, and nanowires) were synthesized at 138$0^{\circ}C$ from ball-milled ZnO powders by a thermal evaporation procedure with an argon carrier gas without any catalysts. Transmission electron microscopy (TEM) revealed that the ZnO nanobelts are single crystalline with the growth direction perpendicular to the (010) lattice plane, and that the ZnO nanorods and nanowires are single crystalline with the growth directions perpendicular to the (001) and (110) lattice Planes, respectively. In cathodoluminescence (CL), the energy Position of the near band-edge (NBE) peak is 3.280 eV for the 100-, 250-, and 500-nm thick nanobelts, 3.262 eV for the 100- and 250-nm thick nanorods, and 3.237 eV for the 500-nm thick nanorods. The synthesized ZnO nanorods were coated conformally with aluminum oxide (Al$_2$O$_3$) material by atomic layer deposition (ALD). $Al_2$O$_3$films were then deposited on these ZnO nanorods by ALD at a substrate temperature of 300 $^{\circ}C$ using trimethylaluminum (TMA) and distilled water ($H_2O$). Transmission electron microscopy (TEM) images of the deposited ZnO nanorods revealed that 40nm-thick $Al_2$O$_3$ cylindrical shells surround the ZnO nanorods.

• Korean Journal of Materials Research
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• v.34 no.1
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• pp.21-26
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• 2024

In this investigation, samples of the chemical (Hg_1-xPb_xBa₂Ca_1.8Mg_0.2Cu₃O_8+δ) were prepared utilizing a solid-state reaction technique with a range of lead concentrations (x = 0.0, 0.05, 0.10, and 0.20). Specimens were pressed at 8 tons per square centimeter and then prepared at 1,138 K in the furnace. The crystalline structure and surface topography of all samples were examined using X-ray diffraction (XRD) and atomic force microscopy (AFM). X-ray diffraction results showed that all of the prepared samples had a tetragonal crystal structure. Also, the results showed that when lead was partially replaced with mercury, an increase in the lead value impacted the phase ratio, and lattice parameter values. The AFM results likewise showed excellent crystalline consistency and remarkable homogeneity during processing. The electrical resistivity was calculated as a function of temperature, and the results showed that all samples had a contagious behavior, as the resistivity decreased with decreasing temperature. The critical temperature was calculated and found to change, from 102, 96, 107, and 119 K, when increasing the lead values in the samples from 0.0 to 0.05, 0.10, and 0.20, respectively.

• Progress in Superconductivity
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• v.10 no.1
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• pp.23-28
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• 2008

We report refinement of crystalline boron by an attrition ball milling system and the superconducting properties of the $MgB_2$ pellets prepared from the refined boron. In this work, we have conducted the ball milling with only crystalline boron powder, in order to improve homogeneity and control the grain size of the $MgB_2$ that is formed from it. We observed that the crystalline responses in the ball-milled boron became broader and weaker when the ball-milling time was further increased. On the other hand, the $B_{2}O_{3}$ peak became stronger in the powders, resulting in an increase in the amount of MgO within the $MgB_2$ volume. The main reason for this is a greater oxygen uptake. From the perspective of the superconducting properties, however, the sample prepared from boron that was ball milled for 5 hours showed an improvement of critical current density ($J_c$), even with increased MgO phase, under an external magnetic field at 5 and 20 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.175-175
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• 2000

Si(100) surfaces were exposed to gas-phase thermal-energy hydrogen atoms, H(g). We find that thermal H(g) atoms etch, amorphize, or penetrate into the crystalline silicon substrate, depending on the employed Ts range during the H(g) exposure. We find that etching is enhanced as Ts is lowered in the 300-700K range, while amorphous silicon hydride (a-Si:H) formation dominates at a Ts below 300K. This result was well explained by the fact that formation of the etching precursor, SiHx(a), and amorphization are both facilitated by a lower Ts, whereas the final step for etching, SiH3(a) + H(g) longrightarrow SiH3(g), is suppressed at a lower Ts. we also find that direct absorption of H(g) by the crystalline bulk of Si(100) substrate occurs within a narrow Ts window of 420-530K. The bulk-absorbed hydrogen evolved out molecularly from Si(100) at a Ts 80-120K higher than that for surface monohydride phase ($\beta$1) in temperature-programmed desorption. This bulk-phase H uptake increased with increasing H(g) exposure without saturation within our experimental limits. Direct absorption of H(g) into the bulk lattice occurs only when the surface is atomically roughened by surface etching. While pre-adsorbed hydrogen atoms on the surface, H(a), were readily abstracted and replaced by D(g), the H atoms previously absorbed in the crystalline bulk were also nearly all depleted, albeit at a much lower rate, by a subsequent D(g) at the peak temperature in TPD from the substrate sequentially treated with H(g) and D(g), together with a gas phase-like H2 Raman frequency of 4160cm-1, will be presented.

• Journal of Magnetics
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• v.10 no.1
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• pp.23-27
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• 2005

The crystallographic and magnetic properties of a series of substitutions in nickel ferrite where the Fe³⁺ is replaced with In³⁺ have been investigated using X-ray diffraction (XRD) and Mössbauer spectroscopy. Information on the exact crystalline structure, lattice parameters, bond lengths and bond angles were obtained by refining their XRD profiles by a Rietveld method. All the crystal structures were found to be cubic with the space group Fd/3m. The lattice constants increased with In³⁺ concentration. The expansion of the tetrahedron was outstanding, indicative of the tetrahedral (A) site preference of larger indium ion. The Mossbauer spectra showed two sets of sextuplet originating from ferric ions occupying the tetrahedral sites and the octahedral (B) sites under the Neel temperature T_N. Regardless of the composition x, the electric quadrupole splitting was zero within the experimental error. At x = 0.2, the magnetic hyperfine fields increased slightly, which meant that the nonmagnetic indium ions occupied preferentially the A-site. At the same time, the intensity of the B-site sub-spectra decreased markedly at the elevated temperature, indicating that the occupation of the A site by indium induced a considerable perturbation on the B site.