• 한국결정성장학회지
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• 제18권6호
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• pp.225-231
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• 2008

For an aspect ratio (transport length-to-width) of 5, Pr=1.13, Le=1.91, Pe=4.3, Cv=1.01, $P_B=20\;Torr$, the effects of addition of inert gas Ne on thermally buoyancy-driven convection ($Gr=2.44{\times}10^3$) are numerically investigated for further understanding and insight into essence of transport phenomena in two dimensional horizontal enclosures. For $10K{\leq}{\Delta}T{\leq}50\;K$, the crystal growth rate increases from 10 K up to 20 K, and then is slowly decreased until ${\Delat}T=50\;K$, which is likely to be due to the effects of thermo-physical properties stronger than the temperature gradient corresponding to driving force for thermal convection. The dimensional maximum velocity gratitude reflecting the intensity of thermal convection is directly and linearly proportional to the temperature difference between the source and crystal regions. The rate is first order-exponentially decreased for $2{\leq}Ar{\leq}5$. This is related to the finding that the effects of side walls tend to stabilize convection in the growth reactor. In addition, the rate is first order exponentially decayed for $10{\leq}P_B{\leq}200\;Torr$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.312-313
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• 2008

A transflective liquid crystal displays associated with fringe field switching (FFS) mode of new concept is proposed. The device utilizes unique characteristic of the FFS mode in which the rotation angle of LC director is strongly dependent on electrode position in on state. We use the liquid crystal with negative dielectric anisotropy. Also we are look for optimized electrode size and the optimization of pixel electrode width and distance between them, the LC director could rotate about $22.5^{\circ}$ and $45^{\circ}$ depending on electrode positions. Consequently, we get high transmittance and high reflection on the optimized electrode condition. Respectively, a high image quality transflective display with single gap and single gamma characteristics realized.

• 대한전자공학회논문지
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• 제22권2호
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• pp.44-54
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• 1985

양전자 방출 CT에서는 고해상도를 얻기 위해서 즙은 폭의 검출기와 충분히 큰 검출효률이 동시에 요구된다. 검출기의 폭을 수 mm까지 줄이면 검출기준이 급감소하고 누설률이 급상승하여 이를 사용함이 인난하여진다. 특히 사각으로 입사하는 포톤의 경우 후각하다. 이를 해결하는 방법으로 쐐기형 검출기를 제안하였고 이에 관련된 문제들을 탐구하였다. 4∼8mm BGO 검출기의 쐐기형을 사용한 시스템이 종미 요육양체형을 사용한 시스템보다 해상도가 증가하였다. 예를들면 회 8mm의 BGO 검출기 200개를 난제하게 배치한 시스템이 이점 샘플링할 경우 쐐기형의 해상도가 5.4mm FWHM으로 같은 조건의 직육면체형의 6.6mm FWHM보다 향상됨을 시뮬레이션으로 확인하였다. 3∼7mm FWHM의 초고해상도 시스템의 검출기에 대하여 형태와 크기에 따른 특성도 시뮬레이션으로 구하여 제시하였다. The high resolution of positron emission tomography, in particular, requires the use of detector crystals of narrow width but still with sufficiently high detection efficiency. If the crystal width is reduced to several millimeters, degradation of detection efficiency and leakage coefficient becomes significant, particularly in case of obliquely incident photons. Alleviation of such a problem can be made possible by modification of the detector shape from the conventional rectangular type to a wed농e type. The Proposed wedge shape makes the absorption length longer for obliquely incident photons, thus increasing the detection efficiency and suppressing leakage coefficient. For the BGO detectors of 4-8mm width, the computer simulation result of the system using wedge detectors reveals resolution improvement to the system using conventional detectors. For the system composed of 200 BGO detectors of 8mm width with 2 point sampling motion, the simulation resolution system using conventional detectors. For the very high resolution system of 3-7mm FWHM, the characteristics of the detector shape and size is studied by computer simulation.

• Journal of Information Display
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• 제5권3호
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• pp.18-24
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• 2004

Voltage-dependent transmittance characteristics associated with various cell parameters have been studied in-plane switching liquid crystal display when both common and pixel electrodes are transparent. When both electrodes are opaque, the transmittance is related to only the distance (I) between electrodes. However, where transparent electrode is used, it is influenced not only the 1but also an electrode width (w) and rubbing angle. In addition, these factors are related to operating voltage which shows maximal transmittance. To maximize the light efficiency of the cell and obtain low operating voltage, the above-mentioned cell parameters need to be optimized.

• 한국결정성장학회지
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• 제19권6호
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• pp.293-297
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• 2009

본 연구에서는 p형 단결정 규소 기판을 에칭시켜 다층구조를 갖는 DBR 및 Microcavity 다공질규소를 제작하고, 그 반사율 스펙트럼을 조사하였다. 그 결과 다층구조를 갖는 다공질규소의 반사율 스펙트럼에서 프린지 패턴의 수는 단일층 다공질규소의 경우보다 상대적으로 많았으며, 특정 파장에서 반사율은 90 % 이상으로 나타났다. 그리고 DBR 다공질규소에서 최대 반사율 봉우리의 FWHM 값은 33 nm로 매우 좁게 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.42-45
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• 2004

High quality CdTe single crystal for the solar cell fabrication was grown by vertical Bridgman method. The etch pits patterns of {111}surfaces of CdTe etched by Nakagawa solution was observed the {111} A composed of Cd atoms with typical triangle etch pits of pyramid mode. From the photoluminescence measurement on {111}A, we observed free exciton($E_x$) existing only higy quality crystal and neytral acceptor bound exciton($A^0$,X) having very strong peak intensity. Then, the full width at half maximum and binding energy of neutral acceptor bound exciton were 7 meV and 5.9 meV, respectively. By Haynes rule, an actibation energy of impurity was 59 meV. Therefore, the origins on impurity level acting as a neutral acceptor were associated Ag or Cu elements.

• 동력기계공학회지
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• 제19권6호
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• pp.26-32
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• 2015

The purpose of this study is to investigate the de-NOx performance characteristics according to the $TiO_2$ crystal structures ratio of $V_2O_5$ SCR catalysts. The anatase(100%) SCR catalyst showed the highest desorption peak of 80ppm at about $250^{\circ}C$, and $NH_3$ was not desorbed at $500^{\circ}C$. It can be confirmed that there was many $NH_3$ desorbed at a high temperature among other various crystal structures, which is because the catalyst was more acidized to increase the intensity of acid sites as the content of subacid sulfate ions($NH_2SO_4$) in the rutile phase increases. The anatase/rutile(7%/93%) SCR had the smallest width of de-NOx performance drop according to thermal aging, and had strong durability against thermal aging.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.125-126
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• 2006

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$. $345cm^2/V{\cdot}s$ at 293 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ},X$) having very strong peak intensity. Then. the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule. an activation energy of impurity was 137 meV.

• 소성∙가공
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• 제13권3호
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• pp.285-289
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• 2004

Micro tensile test specimens of thin film single crystal silicon for the most useful structural materials in MEMS (Micro Electro Mechanical System) devices were fabricated using SOI (Silicon-on-Insulator) wafers and MEMS processes. Dimensions of micro tensile test specimens were thickness of $7\mu\textrm{m}$, width of 50~$350\mu\textrm{m}$, and length of 2mm. Top and bottom silicon were etched using by deep RIE (Reactive Ion Etching). Thin film aluminum markers on testing region of specimens with width of $5\mu\textrm{m}$, lengths of 30~$180\mu\textrm{m}$ and thickness of 200 nm for measuring tensile strain were fabricated by aluminum wet etching method. Fabricated side wall angles of aluminum marker were about $45^{\circ}~50^{\circ}$. He-Ne laser with wavelength of 633nm was used for checking fringed patterns.

• 한국결정성장학회지
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• 제27권2호
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• pp.75-79
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• 2017

고밀도 플라즈마 식각 및 lift-off 두 가지 공정으로 honeycomb 형상의 Ag-grid 투명전극층을 제작하였고 제조 공법에 따른 광학적 및 전기적 특성을 비교하였다. 플라즈마 식각 조건 선정을 위하여 Ag 박막의 $10CF_4/5Ar$ 유도결합 플라즈마 식각특성을 조사하였다. 비교적 낮은 ICP source power 또는 rf chuck power 영역에서는 power 증가에 따라 Ag 식각속도가 증가하였고, 높은 power 조건에서는 $Ar^+$ 이온 에너지 감소 또는 $Ar^+$ 이온에 의한 F radical 제거로 인해 식각속도가 감소하였다. $10CF_4/5Ar$ 플라즈마 식각 공정에 의해 제작된 Ag-grid 전극층은 lift-off 공정으로 제작된 전극층에 비해 grid 패턴 형상의 왜곡이나 단절이 없는 더 우수한 grid 패턴 전사 효율과 가시광선 영역에서 더 높은 83.3 %(pixel 크기 $30{\mu}m$/선폭 $5{\mu}m$)와 71 %(pixel 크기 $26{\mu}m$/선폭 $8{\mu}m$)의 광투과율을 각각 나타내었다. 반면에 lift-off 공정으로 제작된 Ag-grid 전극층은 플라즈마 식각 공정 시편보다 더 우수한 $2.163{\Omega}/{\square}$(pixel 크기 $26{\mu}m$/선폭 $8{\mu}m$)과 $4.932{\Omega}/{\square}$(pixel 크기 $30{\mu}m$/선폭 $5{\mu}m$)의 면저항 특성을 나타내었다.