• Korean Chemical Engineering Research
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• 제53권1호
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• pp.103-110
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• 2015

본 연구에서는 가스 하이드레이트 기술을 이용하여 철강 공정 배기가스로부터 $CO_2$를 분리하는데 사용하는 여러 촉진제의 성능을 조사하였다. 이 실험에서는 $CO_2/N_2$ 혼합가스 ($CO_2/N_2$=20/80, 40/60)와 $CO_2/N_2$ 이외에 CO, $H_2$가 첨가된 Blast furnace gas (BFG) 모델 가스를 대상 가스로 사용하였다. 촉진제로는 구조 II 하이드레이트를 형성한다고 알려진 tetrahydrofuran (THF), propylene oxide, 1,4-dioxane 를 사용하였으며, 각 가스에 대하여 촉진제를 농도별로 첨가했을 때 상평형점의 변화를 측정하였다. 상평형점은 "연속" Quartz crystal microbalance (QCM) 방식을 이용하였다. 또한, Powder X-ray diffraction (PXRD) 분석을 통하여 촉진제의 첨가가 가스 하이드레이트 구조에 미치는 영향을 알아보았다.

• 한국결정성장학회지
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• 제7권2호
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• pp.276-283
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• 1997

함침법을 이용하여 Pt/$SnO_2$ pellet형 가스 센서를 제조하였다. 제조한 미세 분말에 대하여 전자회절 분석, 투과전자현미경, 주사선전자현미경 등의 분석으로 결정 구조 및 방향성, 결정 크기, 촉매와 담체와의 미세구조 등이 분석되었다. 투과전자현미경 사진으로부터 $400^{\circ}C$에서 하소했을 때 $PtCl_x$에서 Cl의 양이 줄어들고 Pt가 담체인 $SnO_2$속으로 이동되고 있는 것을 보여주었다. 이것이 가스 감지도를 향상시키는 것으로 나타났다. Pt/SnO$_2$시편이 있는 반응기에 $N_2$가스 중에 0.5% $H_2$ 가스를 30 sccm으로 계속 흘려주었을 때 $SnO_2$의 전기 저항은 포화가 이루어 졌으나 $SnO_2$상에 수소 가스의 흡착은 계속되었다. 이는 표면 상태(surface state)가 포화된다는 것을 의미한다. 14 ppm $H_2$가스에 대하여 $300^{\circ}C$에서 81%%의 가스 감지도를 보여주었다.

• 한국응용과학기술학회지
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• 제22권3호
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• pp.204-211
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• 2005

The structure of nitrogen adsorption complex of fully dehydrated $Cd^{2+}$ ion exchanged zeolite-X, $|Cd_{46}(N)_{18}|[Si_{100}Al_{92}O_{384}]$, was determined in the cubic space group $Fd\overline{3}$ at 21(1) $^{\circ}C$ [a = 24.863(4) ] by single crystal X-ray diffraction analysis. The crystal was prepared by ion exchange in a flowing steam of 0.05 M aqueous solution $Cd(NO_3)_2$ : $Cd(O_2CCH_3)_2$ = 1:1 for five days, followed by dehydration at $500^{\circ}C$ and $2{\times}10^{-6}$ Tor. for two days, and exposured to 100 Tor. zeolitically dry nitrogen gas at 21(1) $^{\circ}C$. The structure was determined in atmosphere, and was refined within $F_0$ > $4{\sigma}(F_0)$ using reflection for which the final error can appear in indices $R_1$ = 0.097 and $wR_2$ = 0.150. In this structure, $Cd^{2+}$ ions occupied four crystallographic sites. Nine $Cd^{2+}$ ions filled the octahedral site I at the centers of hexagonal prisms (Cd-O = 2.452(16) ${\AA}$). Eight $Cd^{2+}$ ions filled site I' (Cd-O = 2.324(19) ${\AA}$). The remaining 29 $Cd^{2+}$ ions are found at two nonequivalent sites II (in the supercages) with occupancy of 11 and 18 ions. Each of these $Cd^{2+}$ ions coordinated to three framework oxygens, either at 2.159(15) or 2.147(14) ${\AA}$, respectively. Eighteen nitrogen molecules were adsorbed per unit cell and three per supercage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1304-1307
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• 1997

A hydrogen gas sensor utilizing Pt/$SnO_2$ system was fabricated by the pressed pellet method. The crystal structure, direction of the crystal, crystal size and microstructure between the catalyst and the support ($SnO_2$) were characterized with Electron Diffraction Analysis, Transmission Electron Microscopy, Scanning Electron Microscopy. After the reactor with a Pt/$SnO_2$ sample was run with a flow rate of 30sccm (a mixture of $0.5%H_2$ in $N_2$) for a while, the resistance of $SnO_2$ was saturated, but the $SnO_2$ kept absorbing $H_2$ gas. $H_2$ gas sensing properties of Pt/$SnO_2$ were investigated at several temperatures. As a result, it was observed that Pt/$SnO_2$ has high sensitivity at $300^{\circ}C$ and $400^{\circ}C$.

• 한국세라믹학회지
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• 제32권7호
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• pp.809-816
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• 1995

Ti1-xAlxN films were successfully deposited on high speed steel and silicon wafer by plasma-assisted chemical vapor deposition using a TiCl4/AlCl3/N2/Ar/H2 gas mixture. Plasma process enabled N2 gas to nitride AlCl3, which is not possible in sense of thermodynamics. XPS analyses revealed that the deposited layer contained Al-N bond as well as Ti-N bond. Ti1-xAlxN films were polycrystalline and had single phase, B1-NaCl structure of TiN. Interplanar distance, d200, of (200) crystal plane of Ti1-xAlxN was, however, decreased with Al content, x. Al incorporation into TiN caused the grain size to be finer and changed strong (200) preferred orientation of TiN to random oriented microstructure. Those microstructural changes with Al addition resulted in the increase of micro-hardness of Ti1-xAlxN film up to 2800Kg/$\textrm{mm}^2$ compared with 1400Kg/$\textrm{mm}^2$ of TiN.

• 한국결정성장학회지
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• 제25권4호
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• pp.145-152
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• 2015

rf-PECVD 방법에 의해서 $CH_4+H_2$ 혼합가스를 이용Si-웨이퍼 위에 DLC 박막을 증착할 때, 이산화탄소나 질소 등 보조가스가 증착된 박막의 결합구조와 기계적 특성에 미치는 영향을 고찰하였다. DLC 박막의 증착속도는 rf-power가 증가함에 따라서 증가하지만, 보조가스의 양이 증가함에 따라서는 감소하였다. 또한, 이산화탄소($CO_2$) 가스가 증가함에 따라 박막내 수소 함량은 감소하였으나, $sp^3/sp^2$ 결합 비는 증가하였다. 질소($N_2$) 가스가 증가하는 경우는 수소 함량은 감소하였으나, $sp^3/sp^2$ 결합비 변화에 있어 경향성은 보이지 않는 것으로 확인되었다.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.122-123
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• 2006

Tin oxide nanoparticles (n-SnO and $n-SnO_2$) were synthesized by the inert gas condensation (IGC) method under dynamic gas flow of oxygen and argon at various conditions. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) method were used to analysis the size, shape and crystal structure of the produced powders. The synthesized particles were mostly amorphous and their size increased with increasing the partial pressure of oxygen in the processing chamber. The particles also became broader in size when higher oxygen pressures were applied. Low temperature annealing at $320^{\circ}C$ in air resulted to crystallization of the amorphous n-SnO particles to $SnO_2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.213-213
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• 2009

Titanium dioxide ($TiO_2$) thin films were prepared on glass substrates by ion-assisted electron-beam evaporation with 200nm thickness and subsequently crystallized by rapid thermal annealing at the rage of $200{\sim}700^{\circ}C$ in flowing $N_2$ gas. The crystal structure of the films were examined by X-ray diffractometer. As-deposited $TiO_2$ films were amorphous. After annealing, anatase and rutile phase of $TiO_2$ films were observed together.

• 반도체디스플레이기술학회지
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• 제16권4호
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• pp.75-78
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• 2017

The $CO_2$ gas responsibility of $SnO_2$ thin films was researched with various annealing temperatures. $SnO_2$ was prepared on n-type Si substrate by RF magnetron sputtering system and annealed in a vacuum condition. The bonding structure of $SnO_2$ was changed from amorphous to crystal structure with increasing the annealing temperature, and the content of oxygen vacancy was researched the highest of the annealed at $60^{\circ}C$. The $SnO_2$ annealed at $60^{\circ}C$ had the characteristics of the highest capacitance. The special properties of $CO_2$ gas responsibility was found at the $SnO_2$ thin film annealed at $60^{\circ}C$ with amorphous structure because of the combination with the oxygen vacancies and $CO_2$ gases changed the resistivity. The amorphous structure enhanced the responsibility at the $SnO_2$ surface and the conductivity of $SnO_2$ thin film.

• 한국표면공학회지
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• 제25권5호
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• pp.223-233
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• 1992

(Ti, Al)N films were deposited on 304 stainless steel by D.C. magnetron sputtering using Al target and Ti plate. The properties of (Ti, Al)N films such as composition, microhardness, grain size, crystal structure were investigated. The chemical composition of (Ti, Al)N films was similar to the sputter area ratio of titanium to aluminum target by means of EDS and AES survey. The higher bias voltage to substrate and the smaller input of N2 gas showedthe increased microhardness and the finer grain size of the films. The results obtained from this study show, it is belived, that the (Ti, Al)N film by D.C.magne-tron sputtering is promising in the wear resistance use.