• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.718-723
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• 2004

Crystal structure of $(Ba-{1-x}La_x)[Mg_\frac{1+x}{3}}Nb_\frac{{2-x}{3}}]O_3$ (BLMN) ceramics with 0\leq1x \geq was investigated using synchrotron X-ray powder diffraction (XRD) and high reso(B $a_{l-x}$L $a_{x}$)[M $g_{(1+x)}$3/N $b_{(2-x)/3}$］ $O_3$lution transmission electron microscopy (HRTEM). When the La content, x, is above 0.1, the 1:2 ordered hexagonal structure found in Ba($Mg_\frac{1}{3}Nb_\frac{2}{3}})O_3$(BMN) was transformed into 1:1 ordered cubic structure. The 1:1 ordered cubic structure was maintained up to x=0.7. When x exceeded 0.7, however, BLMN was transformed into 1:1 ordered structure which has cation displacement and in-phase and anti-phase tilt of octahedra.

• Current Optics and Photonics
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• v.3 no.1
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• pp.33-39
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• 2019

We report development of a frequency-stabilized mid-infrared continuous-wave (cw) optical parametric oscillator (OPO) based on a fan-out grating MgO:PPLN crystal pumped at 1064 nm. The OPO resonator was designed as a pump-enhanced standing-wave cavity that resonates to the pump and signal beams. To realize stable operation of the OPO, we applied a modified Pound-Drever-Hall technique, which is a well-known method for powerful laser frequency stabilization. Tuning a poling period of the fan-out grating of the crystal allows wavelength-tunable OPO outputs from 1510 nm to 1852 nm and from 2500 nm to 3600 nm for signal and idler beams, respectively. At the idler wavelengths of 2500 nm, 3000 nm and 3500 nm, we achieved more than 50 mW of output powers at a pumping power of 1.1 W. The long-term stability of the OPO was confirmed by recording the power and wavelength variations of the idler for an hour.

• Korean Journal of Optics and Photonics
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• v.5 no.4
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• pp.466-472
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• 1994

An Argon laser pumped Ti:Sapphire laser has been constructed and self-mode locked. Mode-locking was initiated by a moving mirror mounted on the ball slider and maintained by the self-focusing in the laser crystal and an aperture inside the resonator. A prism pair was used to reduce group velocity dispersion. The bandwidth and the pulse width of the mode-locked pulse were 11 nm, $1000\pm20fs$, respectively. ively.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.24-25
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• 2001

광 밴드 갭(photonic band gap)을 가지는 광 결정(photonic crystal)을 이용하여 만들어진 미세 공진기(micro-resonator)를 통해 상온 연속 동작하는 레이저가 최근 개발되었다. 이 미세 공진기는 이득매질(gain medium)이 성장된 반도체의 기판방향과 기판에 수직한 방향을 각각 이차원 광 결정과 판 도파로(slab waveguide) 구조의 전반사를 이용하여 제한하는 구조이다 이러한 광 밴드 갭 공진기의 공진 모드는 그 동안 계산적인 방법을 통해 이론적으로 연구되어 왔으며, 직접 모드의 특성을 측정하는 실험의 필요성이 크게 대두되고 있다. 본 연구에서는 광 밴드 갭에 의해 형성된 2차원 미세 공진기내에서 레이저 발진된 모드의 특성을 먼장 영역(far-field regime)에서 측정 분석한 결과를 보고한다. (중략)

• Current Optics and Photonics
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• v.3 no.3
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• pp.243-247
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• 2019

We have developed a compact, wavelength-selectable, Q-switched Nd:YAG laser at mid ultraviolet for chemical warfare agent detection. The fundamental wave at 1064 nm is delivered by a pulsed solid state laser incorporating with a square-type Nd:YAG rod in a resonator closed by two crossed Porro prisms for environmental reliability. The output energy at 213 nm ($5{\omega}$) and 266 nm ($4{\omega}$) by ${\chi}^{(2)}$ process in the sequentially disposed BBO crystals are measured to be 6.8 mJ and 15.1 mJ, respectively. The output wavelength is selected for $5{\omega}$ and $4{\omega}$ by a motorized wavelength switch. The energy ratio of the $5{\omega}$ to the $4{\omega}$ is varied from 0.05 to 0.85 by controlling the phase matching temperature of the nonlinear crystal for sum-frequency generation without change of the output pulse parameters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.6
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• pp.478-484
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• 2000

The structural changes and the microwave dielectric properties of $Ba_{1-x}$/A$_{x}$/(Mg$_{1}$3//Nb$_{2}$3/)O$_3$(A=Sr, Ca=x0, 0.2, 0.4, 0.6, 0.8, 1.0) were investigated. The densities of samples are gradually decreased with increasing x(BMN=6.1, SMN=5.22 and CMN=4.26 g/m$^3$)The crystal structure of BMN was untilting of oxygen octahedral. The structural changes of BSMN showed the antiphase tilting at x>0.4, and those of BCMN showed the antiphase tilting at 0.20.8. The variation of dielectric constant with Sr was small(BMN=32, SMN=30) However the variation with Ca was large the highest value was 42 at Ca=0.2(CMN=25) The maximum quality factor was 68,000 GHz at Sr=0.2 and the minimum quality factor was 3,000 GHz at Ca=0.2 (BMN=35,000, SMN=20,000 and CMN=23,000 GHz) The temperature coefficients of resonant frequency of BSMN were about 2 times larger than those of BCMN in all composition.ion.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.1
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• pp.35-39
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• 2006

In this study, in order to develop the multilayer piezoelectric actuator and ultrasonic resonator, PMN-PNN-PZT ceramics were fabricated by sintering with $Li_2CO_3-Na_2CO_3$ as sintering aids at $950^{\circ}C$ and their piezoelectric and dielectric characteristics were investigated as a function of PNN substitution. With increasing PNN substitution, dielectric constant(${\epsilon}_r$), electromechanical coupling factor(kp), and piezoelectric d constant($d_{33}$) were increased to $12 mol\%$ PNN substitution and then showed a tendency to decrease rapidly With increasing PNN substitution, crystal structure changed from tetragonal to rhombohedral at $12 mol\%$ PNN substitution and then secondary phase was appeared and its intensity was increased. At the $12 mol\%$ PNN substituted PMN-PZT composition ceramic sintered at $950^{\circ}C$, density, kp, $d_{33}$ and Qm showed the optimum value of $7.79 g/cm^3$, 0.599, 419 pC/N, and 894, respectively for multilayer piezoelectric actuator application.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.201-206
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• 2000

Effects of the post-annealing temperature of CeO$_2$ buffer layers on the properties of YBCO films on CeO$_2$-buffered sapphire were investigated. 45 nm-thick CeO$_2$ buffer layer was prepared in-situ on r-cut sapphire using an on-axis rf magnetron sputtering method, which was later post-annealed at temperatures between 950$^{\circ}$C and 1100$^{\circ}$C in an oxygen-flowing environment. YBCO films were prepared on CeO$_2$-buffered sapphire (CbS), for which the surface morphology, crystal structures and electrical properties of the YBCO films were studied. YBCO films on post-annealed CbS appeared to have better properties than those on as-grown CbS with regard to the morphological, structural and electrical properties when the YBCO films were prepared on CeO$_2$ buffer layer post-annealed at temperatures of 1000 - 1050$^{\circ}$C. A TE$_{011}$ mode rutileloaded cylindrical cavity resonators was fabricated with the YBCO films placed as the endplates, for which the unloaded Q of the resonator was measured. It turned out that the resonator with the endplates prepared from the YBCO films on postannealed CbS at 1000 $^{\circ}$C showed the highest unloaded Q with the value more than 8 ${\times}$ 10$^5$ at 30 K and 8.6 CHz, revealing that the YBCO films on post-annealed CbS at 1000$^{\circ}$C the temperature could be the lowest among the YBCO films on post-annealed CbS.

• Current Optics and Photonics
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• v.2 no.5
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• pp.448-452
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• 2018

A three-wavelength $Pr^{3+}:YLF$ laser at 604 nm, 607 nm and 640 nm simultaneously output by Fabry-Perot (F-P) etalon has been obtained. A 444 nm blue laser diode is used for pumping the $Pr^{3+}:YLF$ crystal, and a 0.1 mm F-P etalon is inserted in the resonator to select wavelength. The theoretical model of three-wavelength $Pr^{3+}:YLF$ laser is established, by adjusting the tilt angle of the etalon, the transmittances of the different wavelengths can be controlled, and the threshold values can be made to equalize by controlling the loss among different wavelengths. In the experiment, when the tilt angle of etalon is $9^{\circ}$ and the optimized length of resonator is 48 mm, the total output power of 25 mW at the three-wavelength is achieved at incident pump power of 7.5 W.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.2
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• pp.255-262
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• 2003

In this paper, an investigation on the ZnO film deposition using radio-frequency magnetic sputtering techniques on aluminum bottom electrode for film bulk acoustic wave resonator (FBAR) filter applications and the temperature effects on the ZnO film growth is presented. The investigation on how much impact the actual process temperature may have on the crystal growth is more meaningful if it is considered that the piezoelectricity property of ZnO films plays a dominant role in determining the resonance characteristics of FBAR devices and the piezoelectricity is determined by the degree of the c-axis preferred orientation of the deposited ZnO films. In this experiment, it was found that the growth of ZnO crystals has a strong dependence on the deposition temperature ranged from room temperature to $350^{\circ}C$ regardless of the RF powers applied and there exist 3 temperature regions divided by 2 critical temperatures according to the degree of the c-axis preferred orientation. Overall, below $200^{\circ}C$, ZnO deposition results in columnar grains with a highly preferred c-axis orientation. With this ZnO film, a multilayered FBAR structure could be realized successfully.