• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.147-152
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• 2010

In this study, the artificial coarse aggregate was manufactured by using coal ash and low grade clay. The characteristics of a coal ash-clay system were investigated using XRD, XRF, TG-DTA, SEM and Dilatometer with various coal ash contents. The chemical compositions are the fly ash, bottom ash and clay, $Al_2O_3$ are 28.5 wt%, 32.4 wt% and 18.1 wt%, and $SiO_2$ are 33.0 wt%, 53.7 wt% and 68.4 wt% in weight ratio, respectively. The shrinkage of specimens started at around $850^{\circ}C$ and changed little up to $1100^{\circ}C$, but increased markedly at above $1100^{\circ}C$. The shrinkage rate is strongly related to the decarbonization amount of coal ash. At the sintering temperature $1150^{\circ}C$, it was found that quartz, mullite, anorthite and albite phase exist in all specimens. It was found that bottom-clay system specimen sintered at $1150^{\circ}C$ had a good compressive strength of 87.5 kg/$cm^2$, and the compressive strength of bottom-clay specimen was higher than that of fly-clay system specimen. The reusability of coal ash as a raw material in the process of shotcrete resources such as artifical coarse aggregate is highly expected.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.6
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• pp.257-262
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• 2015

Recently the world wide efforts reduce occurrence of $CO_2$; global warming main reason. The aim of this study is to improve recycling rate of the fly ash (FA) and fused waste slag (FWS) from the power plant and to carbonate under supercritical condition ($40^{\circ}C$, $80kgf/cm^2$ pressure, 60 min) for $CO_2$ fixation. Specimens of mortar with various mixing ratios of FA, FWS (from 100:0 to 20:80 in 5 steps of 20 % reduction each time), distilled water and 3 M NaOH alkali activators were prepared. As a result, the proportion of weight change ratio increases with CaO content, to 12 % after carbonation under the supercritical condition. There is difference of compressive strength between the carbonated and the alkali activator mortar specimens. The stabilization of $CO_2$ fixation through carbonation which could confirm the applicability of the eco-friendly materials without loss of compressive strength.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.259-265
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• 2011

This research was performed to stabilize heavy metals in mine tailing using fly ash and clay. Fly ash-clay-mine tailing system were investigated using XRD (X-ray diffractometer), XRF (X-ray fluorescence spectrometer), TG-DTA, SEM (Scanning Electron Microscope), Dilatometer and UTM with various mine tailing contents (~15 wt%). The fly ash used in this research was mainly composed of $SiO_2$ (33.01 wt%), $Al_2O_3$ (28.54 wt%), $K_2O$ (3.32 wt%), $Fe_2O_3$ (1.47 wt%), CaO(9.97 wt%). $SiO_2$ and $Al_2O_3$ composition of the clay was over 61 wt%. And the mine tailing have high composition of $SiO_2$ (26.91 wt%), CaO (24.25 wt%), $Fe_2O_3$ (22.97 wt%). Therefore, it was estimated that fly ash-clay-mine tailing have enough sintering characteristics. The shrinkage of specimens started at around $850^{\circ}C$ and changed little up to $1100^{\circ}C$, but increased markedly at above $1100^{\circ}C$. The shrinkage rate is strongly related to the decarbonization amount of coal fly ash. As the result of SEM, structure of the specimens with mine tailing addition showed more close than the one without mine tailing. Compressive strength of the specimens with mine tailing was highly increased to approximately 200~420 kgf/$cm^2$, it satisfied the first grade criterion for clay brick by KS L 4201. The specification of leaching characteristics of the sintered specimens were within the Korean regulation standard.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.2
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• pp.70-74
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• 2009

Effect of the processing variables on the formation of $Pb(Sc_{1/2}Nb_{1/2})O_3$(hereafter PSN) thin layers prepared on Pt(111)/Ti/$SiO_2$/Si substrates using the sol-gel and the spin coating method has been studied. After each deposition, the coated films were heated at $370^{\circ}C$ for 5 min. Then they were finally sintered at temperature range of $600{\sim}700^{\circ}C$ by RTA(rapid thermal annealing). The final multilayered films showed a (111) preferred orientation. On a while, the layer-by-layer crystallization of multilayered amorphous thin films without the intermediate heating exhibited a (100) preferred orientation. In case of heat treatment in the tube furnace with the heating rate of $4^{\circ}C/min$, (100) and (111) oriented thin layers were formed simultaneously. The microstructure of the deposited films were dense and crack-free with thickness of 300nm, irrespective of the processing variables.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.75-79
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• 2017

Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.259-270
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• 1997

Reaction kinetics for the solid-state reaction of $\alpha-Al_2O_3$ with amorphous $TiO_2$ to produce $Al_2TiO_5$ (Tialite) was studied in the temperature range of $1200~1300^{\circ}C$. Rate of kinetic reaction were determined by using $TiO_2$-coated $Al_2O_3$ compact containing 50 mol% $TiO_2$ and heating the reactant mixtures in MgO at definite temperature for various times. Amount of products and unreacted reactants were determined by X-ray diffractometry. Data from the volume fraction and ratio of peak intensities of $\beta-Al_2TiO_5$ indicated that the reaction of $\alpha-Al_2O_3$ with $TiO_2$ to form pseudobrookite starts between 1280 and $1300^{\circ}C$. The activation energy for solid-state reaction was determined by using the Arrhenius equation ; The activation energy was 622.4 kJ/mol.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.33-38
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• 2009

The effect of ${Y_2}{O_3}$ as a sintering additive on thermal conductivity and microstructure of pressureless sintered AIN ceramics was investigated at sintering temperature range from 1,700 to $1,900^{\circ}C$. ${Y_2}{O_3}$ added AIN specimens showed higher densification rate than pure AIN because of the formation of the yttrium aluminates secondary phase by reaction of ${Y_2}{O_3}$ and ${Al_2}{O_3}$ of AIN surface. The thermal conductivity of AIN specimens was promoted by the addition of ${Y_2}{O_3}$ in spite of the formation of secondary phase in AIN gram boundaries and grain boundary triple junction, because ${Y_2}{O_3}$ addition could reduced the oxygen contents in AIN lattice which is primary factor of thermal conductivity. The them1al conductivity of AIN specimens was promoted by increasing sintering time because the increases of average grain size and the elimination of secondary phases from the grain boundary due to the evaporation. Particularly. the thermal conductivity of AIN specimen sintered at $1,900^{\circ}C$ for 5 hours improved over 20 %. $141\;Wm^{-1}K^{-1}$, compared with the specimen sintered at $1,900^{\circ}C$ for 1 hour.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.5
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• pp.241-245
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• 2013

Granular bamboo-derived active carbons (AC) were impregnated (or coated) with $TiO_2$ nano crystalline powders. The photocatalytic activity of the $TiO_2$-impregnated active carbons ($TiO_2$/AC) were determined on the basis of the degradation rate of methylene-blue aqueous solution under UV irradiation. The active compounds of $TiO_2$ were impregnated onto the AC under moderate hydrothermal conditions (${\leq}200^{\circ}C$, pH 11). The mean size of $TiO_2$ particles calculated from BET surface area were found to be as 50 nm. The $TiO_2$ precipitates were coated on the cavities or pores on the surfaces of highly activated carbons. Since the hydrothermal process led to a lowering of the on-set temperature of the anatase-to-rutile transition of $TiO_2$ as low as $200^{\circ}C$, $TiO_2$ crystallites of a pure anatase or a mixed form with rutile were successfully coated on the AC depending on the synthesis temperatures.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.6
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• pp.225-231
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• 2016

The valence band maximum (VBM) and conduction band minimum (CBM) of Al-doped GaInAsSb alloys substrated on GaSb are calculated by using an analytic approximation based on the tight binding method. The relative positions of the VBM and CBM between Al-GaInASSb and GaSb determine band alignement type, valence band offset (VBO) and conductin band offset (CBO) for the heterojunctions. In this study, aluminium doping is assumed to be substituted in the cation site and limited up to 20 % because it can easily oxidize and degrade materials. It is found that the Al-doped alloys exhibit type-II band alignments over the entire composition range and make the band gaps increase, whereas the VBO and CBO decrease. The decreasing rate of VBO is higher than that of CBO, which implies the Al components play a decisive role in controlling electrons at the interface. The Al-dopled GaInAsSb alloy has a direct band gap induced by $E({\Gamma})$ with a considerable distance from the E(L) and E(X), however, $E({\Gamma})$ approaches to E(L) and E(X) in the high Sb concentration (Sb > 0.7-0.8) which might affect the electron mobility and degrade the optical quality.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.2
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• pp.79-93
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• 1991

With the advent of ULSI, many problems in previous metallization techniques and interconnection materials have become more serious. In this work, selective deposition of copper to fill the submicron contact has been tried. After forming electro-deposited copper films on p-type (100) silicon wafer using 0.75M $CuSO_4{\cdot}$5H_2O$ as an electrolyte, the effect of deposition time, current density and concentration of an additive on film properties were investigated. Film thickness, particle size and resistivity were analyzed by Alpha Step, SEM and 4 - point probe measurement respectively. The deposition rate was about $0.5-0.6\mu\textrm{m}$/min at $2A/dm^2$ and the particle size increased with increasing current density. The resistivities of electro-deposited copper films were about $3-6{\mu}{\Omega}{\cdot}$cm for the particle size above $4000{\AA}$. By the addition of 0.2 g/l gelatin, the particle size was reduced to less than $0.1{\mu}m $ and selective plugging of copper on submicron contacts could be successfully achieved.