• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.81-81
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• 2003

The stochiometric mixture of evaporating materials for the CuGaSe$_2$ single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe$_2$, it was found tetragonal structure whose lattice constant no and co were 5.615$\AA$ and 11.025$\AA$, respectively. To obtains the single crystal thin films, CuGaSe$_2$ mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 61$0^{\circ}C$ and 45$0^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5${\mu}{\textrm}{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction(DCXD). Hall effect on this sample was measured by the method of van der pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30K to 150K and by polar optical scattering in the temperature range 150K to 293K. The optical energy gaps were found to be 1.68eV for CuGaSe$_2$ single crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by a=9.615$\times$ 10$^{-4}$ eV/K, and $\beta$=335K. From the photocurrent spectra by illumination of polarized light of the CuGaSe$_2$ single crystal thin films. We have found that values of spin orbit coupling ΔSo and crystal field splitting ΔCr was 0.0900eV and 0.2498eV, respectively. From the PL spectra at 20K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352eV, 0.0932eV, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.4
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• pp.109-116
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• 2024

β-Ga₂O₃ is a representative ultra-wide bandgap (UWBG) semiconductor that has attracted much attention for power device applications due to its wide-bandgap of 4.9 eV and high-breakdown voltage of 8 MV/cm. In addition, because solution growth is possible, it has advantages such as fast growth rate and lower production cost compared to SiC and GaN [1-2]. In this study, we have successfully grown Si-doped 10 mm thick Si-doped β-Ga₂O₃ single crystals by the EFG (Edge-defined Film-fed Growth) method. The growth direction and growth principal plane were set to [010] / (010), respectively, and the growth speed was 7~20 mm/h. The as-grown β-Ga₂O₃ single crystal was cut into various crystal planes (001, 100, ${\bar{2}}01$) and off-angles (1^o, 3^o, 4^o), and then surface processed. After processed, the homoepitaxial layer was grown on the epi-ready substrate using the HVPE (Halide vapor phase epitaxy) method. The processed samples and the epi-layer grown samples were analyzed by XRD, AFM, OM, and Etching to compare the surface properties according to the crystal plane and off-angle.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.31 no.3 s.258
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• pp.225-233
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• 2007

The growth of GaN on the patterned substances has proven favorable to achieve thick, crack-free GaN layers. In this paper, numerical modeling of transport and reaction of species is performed to estimate the growth rate of GaN from tile reaction of TMG(trimethly-gallium) and ammonia. GaN growth rate was estimated through the model analysis including the effect of species velocity, thermal convection and chemical reaction, and thermal condition for the uniform deposition was to be presented. The effect of shape and construction of microscopic pattern was also investigated using a simulator to perform surface analysis, and a review was done on the quantitative thickness and shape in making GaN layer on the pattern. Quantitative analysis was especially performed about the shape of reactor geometry, periodicity of pattern and flow conditions which decisively affect the quality of crystal growth. It was found that the conformal deposition could be obtained with the inclination of trench ${\Theta}>125^{\circ}$. The aspect ratio was sensitive to the void formation inside trench and the void located deep in trench with increased aspect ratio.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.189-198
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• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Korean Journal of Materials Research
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• v.22 no.12
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• pp.711-716
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• 2012

Tungsten bronze structure $Sr_{1-x}Ba_xNb_2O_6$ (SBN) single crystals were grown primarily using the Czochralski method, in which several difficulties were encountered: striation formation and diameter control. Striation formation occurred mainly because of crystal rotation in an asymmetric thermal field and unsteady melt convection driven by thermal buoyancy forces. To optimize the growth conditions, bulk SBN crystals were grown in a furnace with resistance heating elements. The zone of $O_2$ atmosphere for crystal growth is 9.0 cm and the difference of temperature between the melt and the top is $70^{\circ}C$. According to the growth conditions of the rotation rate, grown SBN became either polycrystalline or composed of single crystals. In the case of as-grown $Sr_{1-x}Ba_xNb_2O_6$ (x = 0.4; 60SBN) single crystals, the color of the crystals was transparent yellowish and the growth axis was the c-axis. The facets of the crystals were of various shapes. The length and diameter of the single crystals was 50~70 mm and 5~10 mm, respectively. Tungsten bronze SBN growth is affected by the temperature profile and the atmosphere of the growing zone. The thermal expansion coefficients on heating and on cooling of the grown SBN single crystals were not matched. These coefficients were thought to influence the phase transition phenomena of SBN.

• Polymer(Korea)
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• v.25 no.6
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• pp.840-847
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• 2001

The crystallization characteristics of metallocene linear low density polyethylene (m-LLDPE)/linear low density polyethylene (LLDPE) blends were investigated. The effect of blending on the induction time for crystallization, spherulites growth rate, and maximum size of spherulites was mainly considered in this study. The formation of separate crystal which is well known crystallization behavior in LLDPE/LDPE blend was not found in m-LLDPE/LLDPE blends. The blending m-LLDPE to LLDPE caused the dramatic decrease in the induction time of m-LLDPE/LLDPE blends but it seems that the blend composition shows less effect on the induction time. Lower branching number in m-LLDPE resulted in the increasing of spherulites growth rate and the maximum size of spherulites is depend upon both the induction time and spherulites growth rate of LLDPE component affected by m-LLDPE.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.48-54
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• 1990

YBa2Cu3O7-x(=YBCO) single crystals were grown by flux method and the growing process of crystals was investigated. YBCO and 3BaO-7CuO composition powders were mixed by the ratio of 25 : 75(wt%), and the mixtures were melted at 105$0^{\circ}C$ in a electric furnace with no temperature-gradient. Then the melt was cooled at a rate 2-1$0^{\circ}C$/h in the above furnace. YBCO single crystal plate with average size of $1.5\times$2.0$\times$0.1㎣ were obtained in the cavities between crucible and solidified ingot, and the single crystals were oriented to <001> direction. The ingots of flux parts were analyzed by XRD and EDS for the purpose of presuming the growing process of the crystals. It was assumed that the divorced eutectic reaction, by which YBCO crystals were grown first and then BaCuO2 and CuO crystals, occured in the case of cooling rate faster than 2$^{\circ}C$/h. When the cooling rate was 2$^{\circ}C$/h, it was assumed that quasi-equilibrium eutectic reaction occured, so that YBCO, BaCuO2 and CuO crystals were grown at the same time.

• Journal of the Korean Recycled Construction Resources Institute
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• v.8 no.1
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• pp.120-128
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• 2020

In this study, solid capsules using crystal growth-type inorganic materials that can be directly mixed with mortar were prepared. Thus, three levels of solid capsules were prepared. The prepared solid capsule was mixed with 3% of the cement mass, was evaluated quality and crack healing properties of the mortar. As a test results of the table flow and air content of the mortar mixed with the solid capsules showed that mix of the solid capsules was no effect on the table flow and air volume. As a test result of the crack healing properties of the mortar mixed with the solid capsule according to water flow test and crack closing test, the initial flow rate was decreased, it was confirmed that the reaction product occurred over time and the cracks were healed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.207-215
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• 1997

Aluminum (Al) thin films were deposited on the Si(100) and TiN(60 nm)/Si (100) substrate by the ionized cluster beam deposition (ICBD) method. The characteristics of thin films were examined by the $\alpha$-step, four-point-probe, Scanning Electron Spectroscopy (SEM), Auger Electron Spectroscopy (AES). The growth rate of the Al thin film increased and the resistivity decreased as the crucible temperature increased. At the crucible temperature $1800^{\circ}C$, the microstructure of Al thin film deposited was smooth and continuous the resistivity decreased as the acceleration voltage increased. Also, the minimum resistivity in Si(100) substrate and TiN(60 nm)/Si(100) substrate were 3.4 $\mu \Omega \textrm {cm}$, 3.6 $\mu \Omega \textrm {cm}$ at the acceleration voltage 4 kV and 2 kV respectively. From the AES spectrumt 14 wasn't detected any impurities In the Al thin film. Therefore the resistivity of Al thin film was affected by the microstructure of film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.5
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• pp.212-217
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• 2015

Ships and marine structures have a lot of problems in their high maintenance and operating cost by biofouling. A biofouling occurrs by the adhesion of marine microorganism, algae and bacteria. In this study, the aim is to prevent or to reduce the biofouling phenomena through silver nano-particle coating on artificial light-weight aggregates and geopolymer. The antibacterial activity on them is tested according to ASTM E2149-2013a. The test results showed, it is estimated that silver nano-particles removed 99.99 % of bacteria. Specimens were set up in the sea side of field test area in Korea Institute of Ocean Science and Technology (KIOST) and have been observed for five months. The anti-biofouling effect and difference in weight change rate have been detected two months later after the installation. Because silver nanoparticles inhibit bacterial growth and kill the cells by destroying bacterial membranes, silver nano-particle coating on artificial lightweight aggregates is a well-suited and eco-friendly method for preventing biofouling in the sea up to 5 months.