• Current Photovoltaic Research
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• v.2 no.3
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• pp.103-109
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• 2014

Highly efficient hydrogenated nanocrystalline silicon (nc-Si:H) thin-film solar cells were prepared on flexible stainless steel substrates using plasma-enhanced chemical vapor deposition. To enhance the performance of solar cells, material properties of back reflectors, n-doped seed layers and wide bandgap nc-SiC:H window layers were optimized. The light scattering efficiency of Ag back reflectors was improved by increasing the surface roughness of the films deposited at elevated substrate temperatures. Using the n-doped seed layers with high crystallinity, the initial crystal growth of intrinsic nc-Si:H absorber layers was improved, resulting in the elimination of the defect-dense amorphous regions at the n/i interfaces. The nc-SiC:H window layers with high bandgap over 2.2 eV were deposited under high hydrogen dilution conditions. The vertical current flow of the films was enhanced by the formation of Si nanocrystallites in the amorphous SiC:H matrix. Under optimized conditions, a high conversion efficiency of 9.13% ($V_{oc}=0.52$, $J_{sc}=25.45mA/cm^2$, FF = 0.69) was achieved for the flexible nc-Si:H thin-film solar cells.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.1
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• pp.33-37
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• 2013

In this research, we investigated the effect of mole concentration of precursor on morphological, structural and optical properties of ZnO nanorods. ZnO nanorods were hydrothermally grown on c-plane sapphire substrates in aqueous solution which contains zinc nitrate hexahydrate and hexamethylenetetramine at 90oC in the precursor range of 0.01 M to 0.025 M. With the increase of mole concentration, length and diameter of ZnO nanorods increased. In all the conditions, the growth direction of rods was longitudinally c-axis direction. From the strong emission peak at 380 nm of PL spectra at room temperature, we could confirm that the crystal quality of ZnO nanorods is good to emit radiative recombination spectra.

• Journal of the Korean Ceramic Society
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• v.35 no.6
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• pp.640-646
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• 1998

Nucleation and crystallzation of a quaternary glass system for lead titanate glass-ceramics were in-vestigated using DTA(differential thermal analysis ) with variation of nucleation temperature and crystal growth time. Glass samples containing 60mol% of PbO-{{{{ { TiO}_{2 } }} were prepared from melts by the conventional normal cooling method in a cylindrical brass mould. The glass sample was nucleated between 40$0^{\circ}C$ and 50$0^{\circ}C$ for a given time and showed the maximum nucleation rate at 46$0^{\circ}C$ The DTA crystallization peak temperature decreased with increasing nucleating time and decreasing heating rate during DTA runs which indicated an increase of the number of nuclei produced in the system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.8
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• pp.602-607
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• 2013

Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.239-242
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• 1998

Ca $F_2$ films have superior gate insulator properties than conventional gate insulator such as $SiO_2$, Si $N_{x}$, $SiO_{x}$, and T $a_2$ $O_{5}$ to the side of lattice mismatch between Si substrate and interface trap charge density( $D_{it}$). Therefore, this material is enable to apply Thin Film Transistor(TFT) gate insulator. Most of gate oxide film have exhibited problems on high trap charge density, interface state in corporation with O-H bond created by mobile hydrogen and oxygen atom. This paper performed Ca $F_2$ property evaluation as MIM, MIS device fabrication. Ca $F_2$ films were deposited at the various substrate temperature using a thermal evaporation. Ca $F_2$ films was grown as polycrystalline film and showed grain size variation as a function of substrate temperature and RTA post-annealing treatment. C-V, I-V results exhibit almost low $D_{it}$(1.8$\times$10$^{11}$ $cm^{-1}$ /le $V^{-1}$ ) and higher $E_{br}$ (>0.87MV/cm) than reported that formerly. Structural analysis indicate that low $D_{it}$ and high $E_{br}$ were caused by low lattice mismatch(6%) and crystal growth direction. Ca $F_2$ as a gate insulator of TFT are presented in this paper paperaper

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.133-136
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• 1999

We report on the electrochemical properly of LiZ $n_{x}$Mn $_{2-x}$ $O_4$ for different degrees of Zn substitution(x) Though all cathode material showed spinel phase based on cubic phase in X-ray diffraction, other peaks(M $n_2$ $O_3$ or M $n_3$ $O_4$) gradually exhibited and became intense with the increase of x vague in LiZ $n_{x}$Mn $_{2-x}$ $O_4$. In addtion, TG-DTA analysis exhibited that both LiM $n_2$ $O_4$ and LiZ $n_{0.1}$ M $n_{1.9}$ $O_4$ occurred the weight loss(TG) and the endothermic and exothermic reaction(DTA) until 80$0^{\circ}C$ When x=0.1 in LiZ $n_{x}$Mn $_{2-x}$ $O_4$ cathode materials showed the charge and discharge capacity of about 100mAh/g at first cycle and about 70mAh/g after tooth cycle.cle.e.cle.e.e.e.

• Journal of the Korean Chemical Society
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• v.59 no.2
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• pp.148-155
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• 2015

ZnO nanoplates were prepared by seed-mediated soft-solution process. Photocatalytic property of ZnO nanoplates was superior to that of conventional ZnO nanoparticles owing to the enhanced (0001) plane with large defect sites. In addition, we found that silica coating method could provide to reduce cytotoxicity of ZnO nanoplates. Finally, we have successfully synthesized for the first time large-scale synthesis of plate-type ZnO as few hundreds gram scale for industrial applications through controlling various reagents of growth solution.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.6
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• pp.34-40
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• 1985

Characteristics of GaAE epilayers grown on (100) CaAs wa(tors by molecular beam epitaxy (MBE) under various single crystal growing conditions were investigated. In fabrica-ting GaAs, epilayer by MBE, the most important factors are a substrate temperature(ts) and a flux density ratio (As/Ga). In this experiment, the substrate temperature was varied in the range of 48$0^{\circ}C$ to $650^{\circ}C$ and As and Ga cell temperatures were varied in the range of 218$^{\circ}C$ to 256$^{\circ}C$ and 876$^{\circ}C$ to 98$0^{\circ}C$, respectively. At the substrate temperature of 54$0^{\circ}C$, As cell temperature of 23$0^{\circ}C$, and Ga cell temperature of 91$0^{\circ}C$, the As/Ga ratio was 5"10, the surface morphology was most smooth . Investigation of As-stabilized surface by RHEED and of depth profile by SIM5 showed that As is less stable than Ga. Also, X-ray diffraction measurement revealed that single crystals of (400) and (200) were formed at the both sub-strate temperatures of 52$0^{\circ}C$ and 54$0^{\circ}C$.TEX>.

• Korean Journal of Crystallography
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• v.9 no.1
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• pp.53-63
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• 1998

The Cd1-xZnxS thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). the source and substrate temperature are 600℃ and 440℃, respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction (DCXD). Hall effect on the sample was measured by the van der Pauw method and the carrier density and mobility dependence of Hall characteristics on temperature was also studied. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (γ), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that the best photoconductive characteristic were observed in the Cd0.53Zn0.47S samples annealed in Cu vapor comparing with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.65 × 107, the MAPD of 338mW, and the rise and decay time of 9.7 ms and 9.3 ms, respectively.

• Advances in nano research
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• v.3 no.2
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• pp.97-109
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• 2015

Citrate ion is a commonly used reductant in metal colloid synthesis, undergoes strong surface interaction with silver nanocrystallites. The slow crystal growth observed as a result of the interaction between the silver surface and the citrate ion makes this reduction process unique compared to other chemical and radiolytic synthetic methods. The antimicrobial effects of silver (Ag) ion or salts are well known, but the effects of citrate coated Ag nanoparticles (CAgNPs) are scant. Herein, we have isolated biofilm causative bacteria and fungi from drinking water PVC pipe lines. Stable CAgNPs were prepared and the formation of CAgNPs was confirmed by UV-visible spectroscopic analysis and recorded the localized surface plasmon resonance of CAgNPs at 430 nm. Fourier transform infrared spectroscopic analysis revealed C=O and O-H bending vibrations due to organic capping of silver responsible for the reduction and stabilization of the CAgNPs. X-ray diffraction micrograph indicated the face centered cubic structure of the formed CAgNPs, and morphological studies including size (average size 50 nm) were carried out using transmission electron microscopy. The hydrodynamic diameter (60.7 nm) and zeta potential (-27.6 mV) were measured using the dynamic light scattering technique. The antimicrobial activity of CAgNPs was evaluated (in vitro) against the isolated fungi, Gram-negative and Gram-positive bacteria using disc diffusion method and results revealed that CAgNPs with 170ppm concentration are having significant antimicrobial effects against an array of microbes tested.