• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.858-861
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• 2006

In this paper we model the liquid crystal director field in the Patterned Vertical Alignment (PVA) LC using the fast Q-tensor method, which can model multidimensional director configurations with defects in the liquid crystal director field. We observed the dynamic behaviors of the defect experimentally by applying the voltage and modeled the LC director field with defect in the active area of the PVA cell. As a result, we could also calculate the optical transmittance.

• 한국결정성장학회지
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• 제12권6호
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• pp.299-303
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• 2002

The relationship of crystallinity between defects distribution with (100) ZnTe/GaAs using HWE growth was investigated by four crystal rocking curve (FCRC) and transmission electron microscopy (TEM). The thickness dependence of crystal quality in ZnTe epilayer was evaluated. The FWHM value shows a strong dependence on ZnTe epilayer thickness. For the films thinner than 6 ${\mu}{\textrm}{m}$, the FWHM value decreases very steeply as the thickness increases. For the films thicker than 6 ${\mu}{\textrm}{m}$, it becomes an almost constant value. At the thickness of 12 $\mu\textrm{m}$ with the smallest value of 66 arcsec. which is the best value so far reported on ZnTe epilayers was obtained. Investigation into the nature and behavior of dislocations with film thickness in (100) ZnTe/(100)GaAs heterostructures grown by Hot Wall Epitaxy (HWE). This film defects range from interface to 0.7 ${\mu}{\textrm}{m}$ thickness was high density, due to the large lattice mismatch and thermal expansion coefficients. The thickness of 0.7~1.8 ${\mu}{\textrm}{m}$ was exists low defect density. In the thicker range than 1.8 ${\mu}{\textrm}{m}$ thickness was measured hardly defects.

• 한국결정학회지
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• 제4권1호
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• pp.11-17
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• 1993

융액인상법에 의해 코런덤 단결정을 육성하였다. 인상속도, 회전속도, 융액온도 등 결정육성 요소가 결정 의 품질에 미치는 영향을 조사하였다. 양질의 결정을 육성하기 위한 최적 인상속도는 4.0 mm/hr, 회전속도는 30rpm이었다. 코런덤 결정에서 가장 중요한 결합은 기포이었으며, 기포발생을 억제할 수 있는 융액의 온도제어 방법을 논의하였다. 육성된 결정의 성장방위는 (0001)이었으며, 이 방위는 가장 빠른 성장속도를 갖는 것으로 판단되었다. 흡수 스펙트럼 을 측정하여 Cr3+이온의 흡수천 이를 확인하였다.

• 한국전기전자재료학회논문지
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• 제16권11호
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• pp.969-974
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• 2003

HgGa$_2$S$_4$ single crystals were grown by the chemical transport reaction method. The HgGa$_2$S$_4$ single crystal crystallized into a defect chalcopyrite structure (I 4). The lattice constants of the single crystal were found to be a = 5.635 $\AA$ and c = 10.473 $\AA$. The direct and indirect optical energy gaps were found to be 2.84eV and 2.78eV, respectively. Photoluminescence peaks of HgGa$_2$S$_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집
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• pp.47-52
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• 2004

$HgGa_2S_4$ single crystals were grown by the chemical transport reaction method. The $HgGa_2S_4$ single crystal crystallized into a defect chalcopyrite structure $(I\bar{4})$. The lattice constants of the single crystal were found to be a=5.635 ${\AA}$ and c=10.473 ${\AA}$. The direct and indirect optical energy gaps were found to be 2.84 eV and 2.78 eV, respectively. Photoluminescence peaks of $HgGa_2S_4$ single crystal were observed at 2.37 eV, 2.18 eV, and 1.81 eV. In the single crystal, the donor level of 0.25 eV, the acceptor levels of 0.97 eV and 0.41 eV were obtained by TSC, PICTS, and absorption measurements. The photoluminescence peaks were analyzed to relate to the indirect conduction band, the donor level, and the acceptor levels.

• 한국결정성장학회지
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• 제12권1호
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• pp.21-26
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• 2002

Luminescence and scintillation properties of $PbWO_{4},\;XAIO_{3}$ (X = Y, Lu, Y-Lu) and $LiBaF_{3}$ based scintillators are reported. The effect of present and often not understood defect states is demonstrated in different scintillator parameters and related measurements are discussed. Importance of understanding of defect states participating in the processes of energy transfer and storage in the scintillating materials is emphasised.

• The Korean Journal of Ceramics
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• 제6권4호
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• pp.408-411
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• 2000

Although the rotation angle and its spectrum of the magneto-optical Kerr effect are physical quantities determined inherently by the material itself, we found that they can widely be designed by utilizing a one-dimensional photonic crystal with a ferromagnetic defect layer. By suitable choice of the film structure, the rotation angle at a designated narrow wavelength is resonantly enhanced up to as several hundred times larger as ordinary rotation angle of the magnetic. This is originated by the localization of light at the magnetic layer inside the film.

• Current Optics and Photonics
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• 제3권5호
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• pp.438-444
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• 2019

In this theoretical study, a line-defect photonic-crystal waveguide hosted in an annular photonic crystal was demonstrated to provide high-performance slow light with a wide band, low group-velocity dispersion, and a large normalized delay-bandwidth product. Combined with structural-parameter optimization and selective optofluid injection, the normalized delay-bandwidth product could be enhanced to a large value of 0.502 with a wide bandwidth of 58.4 nm in the optical-communication window, for a silicon-on-insulator structure. In addition, the group-velocity dispersion is on the order of $10^5$ ($ps^2/km$) in the slow-light region, which could be neglected while keeping the signal transmission unchanged.

• 한국결정성장학회지
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• 제8권1호
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• pp.29-35
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• 1998

고품질의 6H-SiC 단결정을 성장하기 위하여 기판, 원료 및 성장에 사용되는 도가니에 대한 고순도 처리공정을 통하여 고순도화하여 결정성장을 시행하였다. 특히, 원료에 대해서는 순화처리전후의 XRD 분석을 행하여 고순도화된 원료의 상태를 확인하였다. 성장된 6H-SiC 단결정의 크기는 직경이 33mm, 길이는 11mm이었고, 기판으로의 사용 및 내부결함에 대한 관찰을 위하여 결정을 절단 및 연마하여 직경 33mm, 두께 0.5mm인 wafer를 제작하였으며, 광학현미경 및 Raman 분석을 이용하여 순화공정을 통해 제작된 wafer의 내부결함밀도 및 결정성을 측정하였다. 분석결과, micropipe 및 planar defect의 밀도는 각각 100개/$\textrm{cm}^2$, 30개/$\textrm{cm}^2$으로 순화처리를 통한 내부결함의 감소로 인해 고품질의 6H-SiC 단결정의 성장이 가능하였다

• 한국결정성장학회지
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• 제10권1호
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• pp.13-16
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• 2000

Progress in Si crystal and wafer technologies is discussed on single crystal growth, wafer fabrication, epitaxial growth, gettering, 300 mm and SOI. As for bulk crystal growth, the mechanism of grown-in defects (voids) formation, the succes of grown-in defect free crystal growth technology and nitrogen doped crystal are shown. New wafer fabrication technologies such as both-side mirror polishing and etchingless process have been developed. The epitaxial growth of SiGe/Si heterostructure for high speed bipolar device is treated. Gettering technology under low temperature process such as RTP is important, and also it is shown that IG effect for Ni could be predicted using computer simulation of precipitate density and size. The development of 300 mm wafer and SOI has made progress steadily.