• Journal of the Optical Society of Korea
• /
• v.17 no.5
• /
• pp.392-398
• /
• 2013

As the essential techniques for the CD (Critical Dimension) measurement of the LCD pattern, there are various modules such as an optics design, auto-focus [1-4], and precise edge detection. Since the operation of image enhancement to improve the CD measurement repeatability, a ring type of the reflected lighting optics is devised. It has a simpler structure than the transmission light optics, but it delivers the same output. The edge detection is the most essential function of the CD measurements. The CD measurement is a vital inspection for LCDs [5-6] and semiconductors [7-8] to improve the production yield rate, there are numbers of techniques to measure the CD. So in this study, a new subpixel algorithm is developed through facet modeling, which complements the previous sub-pixel edge detection algorithm. Currently this CD measurement system is being used in LCD manufacturing systems for repeatability of less than 30 nm.

• Current Optics and Photonics
• /
• v.2 no.1
• /
• pp.69-78
• /
• 2018

This paper presents a precise edge detection algorithm for the critical dimension (CD) measurement of a Thin-Film Transistor Liquid-Crystal Display (TFT-LCD) pattern. The sigmoid surface function is proposed to model the blurred step edge. This model can simultaneously find the position and geometry of the edge precisely. The nonlinear least squares fitting method (Levenberg-Marquardt method) is used to model the image intensity distribution into the proposed sigmoid blurred edge model. The suggested algorithm is verified by comparing the CD measurement repeatability from high-magnified blurry and noisy TFT-LCD images with those from the previous Laplacian of Gaussian (LoG) based sub-pixel edge detection algorithm and error function fitting method. The proposed fitting-based edge detection algorithm produces more precise results than the previous method. The suggested algorithm can be applied to in-line precision CD measurement for high-resolution display devices.

• Korean Journal of Optics and Photonics
• /
• v.15 no.1
• /
• pp.79-85
• /
• 2004

We report on a transmittance controlled photomask with phase patterns on the back quartz surface. Theoretical analysis for changes in illumination pupil shape with respect to the variation of size and density of backside phase patterns and experimental results for improvement of critical dimension uniformity on a wafer by using the transmittance controlled photomask are presented. As phase patterns for controlling transmittance of the photomask we used etched contact-hole type patterns with 180" rotative phase with respect to the unetched region. It is shown that pattern size on the backside of the photomask must be made as small as possible in order to keep the illumination pupil shape as close as possible to the original pupil shape and to achieve as large an illumination intensity drop as possible at a same pattern density. The distribution of illumination intensity drop suitable for correcting critical dimension error was realized by controlling pattern density of the contact-hole type phase patterns. We applied this transmittance controlled photomask to a critical layer of DRAM (Dynamic Random Access Memory) having a 140nm design rule and could achieve improvement of the critical dimension uniformity value from 24.0 nm to 10.7 nm in 3$\sigma$.TEX>.

• ETRI Journal
• /
• v.27 no.2
• /
• pp.188-194
• /
• 2005

We report on the improvement of critical dimension (CD) linearity on a photomask by applying the concept of process proximity correction to a laser lithographic process used for the fabrication of photomasks. Rule-based laser process proximity correction (LPC) was performed using an automated optical proximity correction tool and we obtained dramatic improvement of CD linearity on a photomask. A study on model-based LPC was executed using a two-Gaussian kernel function and we extracted model parameters for the laser lithographic process by fitting the model-predicted CD linearity data with measured ones. Model-predicted bias values of isolated space (I/S), arrayed contact (A/C) and isolated contact (I/C) were in good agreement with those obtained by the nonlinear curve-fitting method used for the rule-based LPC.

• Korean Journal of Optics and Photonics
• /
• v.18 no.1
• /
• pp.74-78
• /
• 2007

We report theoretical and experimental results for application of transmittance-controlled photomask technology to ArF lithography. The transmittance-controlled photomask technology is thought to be a promising technique fo critical dimension (CD) uniformity correction on a wafer by use of phase patterns on the backside of a photomask. We could theoretically reproduce experimental results for illumination intensity drop with respect to the variation of backside phase patterns by considering light propagation from the backside to the front side of a photomask at the ArF lithography wavelength. We applied the transmittance-controlled photomask technology to ArF lithography for a critical layer of DRAM (Dynamic Random Access Memory) having a 110-nm design rule and found that the in-field CD uniformity value was improved from 13.8 nm to 9.7 nm in $3{\sigma}$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.08a
• /
• pp.400-400
• /
• 2009

• Journal of the Optical Society of Korea
• /
• v.18 no.5
• /
• pp.531-537
• /
• 2014

Through-silicon vias (TSVs) are fine, deep holes fabricated for connecting vertically stacked wafers during three-dimensional packaging of semiconductors. Measurement of the TSV geometry is very important because TSVs that are not manufactured as designed can cause many problems, and measuring the critical dimension (CD) of TSVs becomes more and more important, along with depth measurement. Applying white-light scanning interferometry to TSV measurement, especially the bottom CD measurement, is difficult due to the attenuation of light around the edge of the bottom of the hole when using a low numerical aperture. In this paper we propose and demonstrate four bottom CD measurement methods for TSVs: the cross section method, profile analysis method, tomographic image analysis method, and the two-dimensional Gaussian fitting method. To verify and demonstrate these methods, a practical TSV sample with a high aspect ratio of 11.2 is prepared and tested. The results from the proposed measurement methods using white-light scanning interferometry are compared to results from scanning electron microscope (SEM) measurements. The accuracy is highest for the cross section method, with an error of 3.5%, while a relative repeatability of 3.2% is achieved by the two-dimensional Gaussian fitting method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.6
• /
• pp.515-521
• /
• 2003

There are now many theoretical investigations and real manufactures for numerous applications of photonic crystals (PCs) associated with photonic band gap and photonic integrated circuits. However, there are some difficulties to design and fabricate the desired pattern quality. It is not easy to satisfy accurate critical dimension (CD) for patterns with arbitrary shapes and pitch sizes aligned in various directions. In this work, we report the optimum conditions to better fabricate and design, and greatly improve pattern quality in delineating two-dimensional (2D) PCs in the nanometer range using single- step e-beam lithography system with conventional exposure mode.

• Journal of the Optical Society of Korea
• /
• v.6 no.4
• /
• pp.180-184
• /
• 2002

In this study, we investigated mask errors, photo errors with attenuated phase shift mask and off-axis illumination, and etch errors in dry etch conditions. We propose that total process proximity correction (TPPC), a concept merging every process step error correction, is essential in a lithography process when minimum critical dimension (CD) is smaller than the wavelength of radiation. A correction rule table was experimentally obtained applying TPPC concept. Process capability of controlling gate CD in DRAM fabrication should be improved by this method.

• Transactions on Electrical and Electronic Materials
• /
• v.15 no.3
• /
• pp.159-163
• /
• 2014

More accurate CD (Critical Dimension) control is required for the nanometer-scaled devices. However, since the reflectivity between substrate and PR (Photoresist) becomes higher, the CD (Critical Dimension) swing curve was intensified. The higher reflectivity also causes PR notching due to the pattern of sub-layer. For this device requirement, it was optimized for the thickness, refractive index(n) and absorption coefficient(k) in the bottom anti-reflective coating(BARC; SiON) and photoresist with the minimum reflectivity. The computational simulated conditions, which were determined with the thickness of 33 nm, n of 1.89 and k of 0.369 as the optimum condition, were successfully applied to the experiments with no standing wave for the 0.13um-device. At this condition, the lowest reflectivity was 0.44%. This optimum condition for BARC SiON film was applied to the process for 0.13um-device. The optimum SiON film as BARC to PR and sub-layer could be formed with the accurate CD control and no standing waver for the nanometer-scaled semiconductor manufacturing process.