• Title/Summary/Keyword: critical current ratio

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Evaluation of Emulative Level for Precast Moment Frame Systems with Dry Mechanical Splices by Using Nonlinear Dynamic Analysis (비선형동적해석을 통한 건식 기계적이음을 갖는 프리캐스트 모멘트 골조의 동등성 평가)

  • Kim, Seon-Hoon;Lee, Won Jun;Lee, Deuckhang
    • Journal of the Earthquake Engineering Society of Korea
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    • v.28 no.2
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    • pp.85-92
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    • 2024
  • This study presents code-compliant seismic details by addressing dry mechanical splices for precast concrete (PC) beam-column connections in the ACI 318-19 code. To this end, critical observations of previous test results on precast beam-column connection specimens with the proposed seismic detail are briefly reported in this study, along with a typical reinforced concrete (RC) monolithic connection. On this basis, nonlinear dynamic models were developed to verify seismic responses of the PC emulative moment-resisting frame systems. As the current design code allows only the emulative design approach, this study aims at identifying the seismic performances of PC moment frame systems depending on their emulative levels, for which two extreme cases were intentionally chosen as the non-emulative (unbonded self-centering with marginal energy dissipation) and fully-emulative connection details. Their corresponding hysteresis models were set by using commercial finite element analysis software. According to the current seismic design provisions, a typical five-story building was designed as a target PC building. Subsequently, nonlinear dynamic time history analyses were performed with seven ground motions to investigate the impact of emulation level or hysteresis models (i.e., energy dissipation performance) on system responses between the emulative and non-emulative PC moment frames. The analytical results showed that both the base shear and story drift ratio were substantially reduced in the emulative system compared to that of the non-emulative one, and it indicates the importance of the code-compliant (i.e., emulative) connection details on the seismic performance of the precast building.

Effect of boron milling on phase formation and critical current density of MgB2 bulk superconductors

  • Kang, M.O.;Joo, J.;Jun, B.H.;Park, S.D.;Kim, C.S.;Kim, C.J.
    • Progress in Superconductivity and Cryogenics
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    • v.21 no.1
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    • pp.18-24
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    • 2019
  • This study was carried out to investigate the effect of milling of boron (B), which is one of raw materials of $MgB_2$, on the critical current density ($J_c$) of $MgB_2$. B powder used in this study is semi-amorphous B (Pavezyum, Turkey, 97% purity, 1 micron). The size of B powder was reduced by planetary milling using $ZrO_2$ balls (a diameter of 2 mm). The B powder and balls with a ratio of 1:20 were charged in a ceramic jar and then the jar was filled with toluene. The milling time was varied from 0 to 8 h. The milled B powders were mixed with Mg powder in the composition of (Mg+2B), and the powder mixtures were uniaxially pressed at 3 tons. The powder compacts were heat-treated at $700^{\circ}C$ for 1 h in flowing argon gas. Powder X-ray diffraction and FWHM (Full width at half maximum) were used to analyze the phase formation and crystallinity of $MgB_2$. The superconducting transition temperature ($T_c$) and $J_c$ of $MgB_2$ were measured using a magnetic property measurement system (MPMS). It was found that $B_2O_3$ was formed by B milling and the subsequent drying process, and the volume fraction of $B_2O_3$ increased as milling time increased. The $T_c$ of $MgB_2$ decreased with increasing milling time, which was explained in terms of the decreased volume fraction of $MgB_2$, the line broadening of $MgB_2$ peaks and the formation of $B_2O_3$. The $J_c$ at 5 K increased with increasing milling time. The $J_c$ increase is more remarkable at the magnetic field higher than 3 T. The $J_c$ at 5 K and 4 T was the highest as $4.37{\times}10^4A/cm^2$ when milling time was 2 h. The $J_c$ at 20 K also increased with increasing milling time. However, The $J_c$ of the samples with the prolonged milling for 6 and 8 h were lower than that of the non-milled sample.

The Chracterization of Critical Ranges of Soil Physico-chemical Properties of Ginseng Field and Nutrient Contents of Ginseng Leaves in Gyeonggi Province (경기지역 인삼재배지의 토양 및 엽중 적정양분함량 검정)

  • Jin, Hyun-O;Kwon, Hyuck-Bum;Yang, Deok-Chun
    • Korean Journal of Plant Resources
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    • v.24 no.5
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    • pp.642-649
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    • 2011
  • Ginseng growth is largely affected by characteristics of soil in Ginseng field. In this study, we determined the critical ranges of physico-chemical properties of soil for optimization of ginseng growth by analyzing the soils from Anseong and Pocheon regions in Gyeonggi province. Fresh weight of ginseng was 2 to 5 fold higher in good growth field compared to poor growth field within Anseong region. In the case of Pocheon region, 1.5 to 2 fold differences of fresh weight of ginseng was observed between good and poor growth field. These results indicate the difference of ginseng growth even in the same region. Based on these results, critical ranges of physico-chemical properties of soils were determined by comparing the good and poor growth field of each regions, which are follows; more than 50% of soil porosity, 2.0~2.8 g/kg of total nitrogen, 500~900 mg/kg for Av. $P_2O_5$, 2.3~3.5 $cmol_c\;kg^{-1}$ for Exch. Ca in Anseong; less than 13% of liquid phase, 400~650 mg/kg for Av. $P_2O_5$, 4.0~4.7 $cmol_c\;kg^{-1}$ for Exch. Ca, less than 0.8 and 0.5 $cmol_c\;kg^{-1}$ for Exch. Mg and K, respectively, in Pocheon. Interestingly, we found that ginseng growth was affected by exchangeable base ratio (Ca:Mg:K) especially in Anseong region, which were 6:2:1 in good growth field while 4:2:1 in poor growth field. Critical ranges for nutrient contents of ginseng leaves were also characterized, which are less than 0.2% and 0.22% of each P and Mg, respectively, in Anseong, while less than 1.8% and 0.18% of each N and P, respecively, and 1.5~3.0% of K in Pocheon. In addition, we determined critical ranges for inorganic nutrient contents in the current study.

A Study on the Role of Capital Regulation in Capital Market Law preventing Investment Bank Business Risks (자본시장법상 자기자본규제의 미래 투자은행(IB) 위험예방 가능성 연구)

  • Chang, Kyung-Chun;Lee, Sang-Heon
    • Management & Information Systems Review
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    • v.28 no.3
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    • pp.161-189
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    • 2009
  • The sub-prime crisis led to the collapse of US investment banks which were considered highly competitive during the Asian Financial Crisis. The event gave us a lesson on importance of the financial supervision. Additionally concerns rise over the fact that the role model of the Capital Market Law, created for the purpose of developing the capital market, is the US investment banks. This paper investigates if the prudential regulations, among them especially the capital regulation, are able to prevent the risk the arises from Korean financial firms operating investment bank business. The current capital requirement regulation, Net Capital Ratio(NCR), is not sufficient, because it's nature of being a ratio makes the NCR ineffective when assets and liabilities are concurrently rising. We also verified the internal model which measured the market risk, by comparing the US investment and Korean banks' diversification effect. The result of the test is that it is difficult to conclude the internal model has a critical defect. This paper's contribution is that it is not sufficient use only the capital regulation in supervising financial markets.

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The electrical characteristics of flexible organic field effect transistors with flexible multi-stacked hybrid encapsulation

  • Seol, Yeong-Guk;Heo, Uk;Park, Ji-Su;Lee, Nae-Eung;Lee, Deok-Gyu;Kim, Yun-Je;An, Cheol-Hyeon;Jo, Hyeong-Gyun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.08a
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    • pp.176-176
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    • 2010
  • One of the critical issues for applications of flexible organic thin film transistors (OTFTs) for flexible electronic systems is the electrical stabilities of the OTFT devices, including variation of the current on/off ratio (Ion/Ioff), leakage current, threshold voltage, and hysteresis under repetitive mechanical deformation. In particular, repetitive mechanical deformation accelerates the degradation of device performance at the ambient environment. In this work, electrical stability of the pentacene organic thin film transistors (OTFTs) employing multi-stack hybrid encapsulation layers was investigated under mechanical cyclic bending. Flexible bottom-gated pentacene-based OTFTs fabricated on flexible polyimide substrate with poly-4-vinyl phenol (PVP) dielectric as a gate dielectric were encapsulated by the plasma-deposited organic layer and atomic-layer-deposited inorganic layer. For cyclic bending experiment of flexible OTFTs, the devices were cyclically bent up to 105 times with 5mm bending radius. In the most of the devices after 105 times of bending cycles, the off-current of the OTFT with no encapsulation layers was quickly increased due to increases in the conductivity of the pentacene caused by doping effects from $O_2$ and $H_2O$ in the atmosphere, which leads to decrease in the Ion/Ioff and increase in the hysteresis. With encapsulation layers, however, the electrical stabilities of the OTFTs were improved significantly. In particular, the OTFTs with multi-stack hybrid encapsulation layer showed the best electrical stabilities up to the bending cycles of $10^5$ times compared to the devices with single organic encapsulation layer. Changes in electrical properties of cyclically bent OTFTs with encapsulation layers will be discussed in detail.

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Improvement of Hysteresis Characteristics of Low Temperature Poly-Si TFTs (저온 Poly-Si TFT 소자의 Hysteresis 특성 개선)

  • Chung, Hoon-Ju;Cho, Bong-Rae;Kim, Byeong-Koo
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.2 no.1
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    • pp.3-9
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    • 2009
  • Although Active matrix organic light emitting diode (AMOLED) display has a better image quality in terms of viewing angle, contrast ratio, and response time than liquid crystal displays (LCDs), it still has some critical issues such as lifetime, residual images, and brightness non-uniformity due to non-uniformity in electrical characteristics of driving TFTs and IR drops on supplied power line. Among them, we improved irrecoverable residual images of AMOLED displays which is mainly related to the hysteresis characteristics of driving TFTs. We consider four kinds of surface treatment conditions before gate oxide deposition for improving hysteresis characteristics. We can reduce the hysteresis level of p-channel TFT to 0.23 V, interface trap states between the poly-Si layer and gate insulator to $3.11{\times}10^{11}cm^{-2}$, and output current variation of p-channel TFT to 3.65 % through the surface treatment using ultraviolet light and H2 plasma. Therefore, the recoverable residual image problem of AMOLED displays can be improved by surface treatment using ultraviolet light and $H_2$ plasma.

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Fabrication of Graphene Field-effect Transistors with Uniform Dirac Voltage Close to Zero (균일하고 0 V에 가까운 Dirac 전압을 갖는 그래핀 전계효과 트랜지스터 제작 공정)

  • Park, Honghwi;Choi, Muhan;Park, Hongsik
    • Journal of Sensor Science and Technology
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    • v.27 no.3
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    • pp.204-208
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    • 2018
  • Monolayer graphene grown via chemical vapor deposition (CVD) is recognized as a promising material for sensor applications owing to its extremely large surface-to-volume ratio and outstanding electrical properties, as well as the fact that it can be easily transferred onto arbitrary substrates on a large-scale. However, the Dirac voltage of CVD-graphene devices fabricated with transferred graphene layers typically exhibit positive shifts arising from transfer and photolithography residues on the graphene surface. Furthermore, the Dirac voltage is dependent on the channel lengths because of the effect of metal-graphene contacts. Thus, large and nonuniform Dirac voltage of the transferred graphene is a critical issue in the fabrication of graphene-based sensor devices. In this work, we propose a fabrication process for graphene field-effect transistors with Dirac voltages close to zero. A vacuum annealing process at $300^{\circ}C$ was performed to eliminate the positive shift and channel-length-dependence of the Dirac voltage. In addition, the annealing process improved the carrier mobility of electrons and holes significantly by removing the residues on the graphene layer and reducing the effect of metal-graphene contacts. Uniform and close to zero Dirac voltage is crucial for the uniformity and low-power/voltage operation for sensor applications. Thus, the current study is expected to contribute significantly to the development of graphene-based practical sensor devices.

Improving the Effectiveness of Customer Classification Models: A Pre-segmentation Approach (사전 세분화를 통한 고객 분류모형의 효과성 제고에 관한 연구)

  • Chang, Nam-Sik
    • Information Systems Review
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    • v.7 no.2
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    • pp.23-40
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    • 2005
  • Discovering customers' behavioral patterns from large data set and providing them with corresponding services or products are critical components in managing a current business. However, the diversity of customer needs coupled with the limited resources suggests that companies should make more efforts on understanding and managing specific groups of customers, not the whole customers. The key issue of this paper is based on the fact that the behavioral patterns extracted from the specific groups of customers shall be different from those from the whole customers. This paper proposes the idea of pre-segmentation before developing customer classification models. We collected three customers' demographic and transactional data sets from a credit card, a tele-communication, and an insurance company in Korea, and then segmented customers by major variables. Different churn prediction models were developed from each segments and the whole data set, respectively, using the decision tree induction approach, and compared in terms of the hit ratio and the simplicity of generated rules.

Fabrication of GdBCO Coated conductor using IBAD-MgO substrate (IBAD-MgO 기판을 이용한 GdBCO 초전도 박막선재의 제조)

  • Ha, H.S.;Lee, J.H.;Oh, J.G.;Ko, R.K.;Kim, H.S.;Ha, D.W.;Oh, S.S.;Kim, H.K.;Yang, J.S.;Jung, S.W.;Moon, S.H.;Park, C.;Yoo, S.I.;Youm, D.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.44-44
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    • 2008
  • GdBCO coated conductor have been fabricated using reactive co-evaporation. The batch type co-deposition system was specially designed and was named EDDC (evaporation using drum in dual chamber) that is possible to deposit superconducting layer with optimum composition ratio of materials at temperature over $700^{\circ}C$ and several mTorr of oxygen. The IBAD-MgO substrate with the architecture of LaMnO3(LMO)/IBAD-MgO/Hastelloy was used for coated conductor. In this study, GdBCO superconducting layer was deposited on IBAD-MgO substrate at optimal oxygen partial pressure (pO2) and deposition temperature. After fabrication of GdBCO coated conductor, critical current density was measured by 4-probe method. Surface morphology and texture of GdBCO coated conductors were analyzed by the SEM and XRD, respectively.

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A comparative study on the flux pinning properties of Zr-doped YBCO film with those of Sn-doped one prepared by metal-organic deposition

  • Choi, S.M.;Shin, G.M.;Joo, Y.S.;Yoo, S.I.
    • Progress in Superconductivity and Cryogenics
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    • v.15 no.4
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    • pp.15-20
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    • 2013
  • We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.