• Coupled systems mechanics
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• 제9권3호
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• pp.201-217
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• 2020

This paper employs differential quadrature method (DQM) and nonlocal strain gradient theory (NSGT) for studying free vibrational characteristics of porous functionally graded (FG) nanoplates coupled by visco-elastic foundation. A secant function based refined plate theory is used for mathematical modeling of the nano-size plate. Two scale factors are included in the formulation for describing size influences based on NSGT. The material properties for FG plate are porosity-dependent and defined employing a modified power-law form. Visco-elastic foundation is presented based on three factors including a viscous layer and two elastic layers.The governing equations achieved by Hamilton's principle are solved implementing DQM. The nanoplate vibration is shown to be affected by porosity, temperature rise,scale factors and viscous damping.

• 반도체디스플레이기술학회지
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• 제10권2호
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• pp.83-89
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• 2011

In this study, we investigated the effects of shutter control by Reactive Magnetron Sputtering using Inductively-Coupled Plasma(ICP) for obtaining ZnO thin films with high purity. The surface morphologies and structure of deposited ZnO thin films were characterized using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Diffractometer (XRD). Also, optical and chemical properties of ZnO thin films were analyzed by Spectroscopic Ellipsometer (SE) and X-ray Photoelectron spectroscopy (XPS). As a result, it observed that ZnO thin films grown at reactive sputtering using shutter control and ICP were higher density, lower surface roughness, better crystallinity than other conventional sputtering deposition methods. For obtaining better quality deposition ZnO thin films, we will investigate the effects of substrate temperature and RF power on shutter control by a reactive magnetron sputtering using inductively-coupled plasma.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 광주전남지부
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• pp.43-47
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• 2006

In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma (ICP). As results at several dependences of 20~100mTorr Xenon pressure, the brightness of discharge tube was higher (4,900 $cd/m^2$) than other conditions when Xe pressure was 20mTorr and RF power was 200W. In that case, the electron temperature and density were 3.58eV and $3.56{\times}10^{12}cm^2$, respectively. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.168-168
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• 1999

Recently, Fe/Si multilayered films (MLF) have been a focus of interest due to the strong antiferromagnetic (AF) coupling observed in such kind of MLF originates from the same nature as in the metal/metal MLF. In particular, a question of whether the spacer layer in the Fe/Si MLF is metallic or semiconducting is of interest. In spite of various experimental techniques envolved in the study, the chemical composition and the properties of the interfacial regions in the MLF exhibiting the AF coupling is still questionable. The nature of the AF coupling and the interfacial properties of Fe/Si MLF are investigated in this study. A series of Fe/Si MLF with a fixed nominal thickness of Fe(3nm) and a variable thickness of Sk(1.0-2.2nm) were deposited by RF-sputtering onto glass substrates at room temperature. The atomic structures and the actual sublayer thicknesses of the Fe/Si MLF are investigated by using x-ray diffraction. The magnetic-field dependence of the equatorial Kerr effect clearly shows an appearance of the AF coupling between Fe sublayers at tsi = 1.5 - 1.8 nm. the drastic discrepancies between the experimental magnetooptical (MO) and optical properties, and based on the assumption of sharp interfaces between Fe and Si sublayers leads to a conclusion that pure si is absent in the AF-coupled Fe/Si MLF. Introducing in the model nonmagnetic semiconducting FeSi alloy layers between Fe and Si sublayers or as spacer between pure Fe sublayers only slightly improves the agreement between model and experiment. A reasonable agreement between experimental and simulated MO spectra was reached with using the fitted optical properties for the spacer with a typical metallic type of behavior. The results of the magnetic properties measured by vibrating sample magnetometer and magnetic circular dichroism are also analyzed in connection with the MO and optical properties.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.59.2-59.2
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• 2015

Modification of film structure and properties in inductively-coupled plasma (ICP) assisted dc and pulsed dc sputtering has been reported by Oya and Kusano [1] and by Sakamoto, Kusano, and Matsuda [2], showing drastic changes in films structure and properties by the ICP assistance in particular to the pulsed dc discharge. Although mechanisms involved in the modification has been reported to be the increase in energy transferred to the substrate, details of effects of low-energy ion bombardment on the modification and origin of an anomalous increase in the ion quantity by the ICP assistance to the pulsed dc discharge have not been discussed. In this presentation, mechanisms involved in film structure and property modification in ICP assisted dc and pulsed dc sputtering, in which a number of low-energy ions are formed, will be discussed based on ion energy distribution as well as effectiveness of energy transfer to the substrate by low energy particles [3]. The results discussed in this presentation will emphasize the fact that the energetic particles playing an important role in the film structure modification are those to be deposited, but not those of inert gas, when their energies range in less than 100 eV in the pressure range of magnetron sputtering.

• 전기학회논문지
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• 제56권1호
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• pp.132-138
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• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• Transactions on Electrical and Electronic Materials
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• 제9권1호
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• pp.28-32
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• 2008

Hydrogenated microcrystalline silicon(${\mu}c$-Si:H) films were prepared using inductively coupled plasma chemical vapor deposition(ICP-CVD) method, electrical and optical properties of these films were studied as a function of silane concentration. And then, effect of $PH_3\;and\;B_2H_6$ addition on their electrical properties was also investigated for solar cell application. Characterization of these films from X-ray diffraction revealed that the conductive film exists in microcrystalline phase embedded in an amorphous network. At $PH_3/SiH_4$ gas ratio of $0.9{\times}10^{-3}$, dark conductivity has a maximum value of ${\sim}18.5S/cm$ and optical bandgap also a maximum value of ${\sim}2.39eV$. Boron-doped ${\mu}c$-Si:H films, satisfied with p-layer of solar cell, could be obtained at ${\sim}10^{-2}\;of\;B_2H_6/SiH_4$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 제37회 하계학술대회 논문집 C
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• pp.1408-1409
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• 2006

In this paper, poly methyl methacrylate thin films were deposited on a ITO glass substrate using a plasma polymerization technique. In order to investigate the influence of the plasma coupling method and plasma conditions on the plasma polymerized poly methyl methacrylate (ppMMA) thin film properties, inductively coupled (ICP) and capacitively coupled plasma (CCP) were used to generate the plasma and the plasma parameters were varied. Molecular structures of the ppMMAs were investigated using a Fourier Transform Infrared (FT-IR) spectroscopy. Dielectric constants of the ppMMA thin films were investigated using a impedance analyzer (HP4192A, LF Impedance Analyzer). Current-Voltage (I-V) characteristics of the ppMMA thin films were investigated using a source measurement unit (SMU: Keithley 2400). Relationship between the plasma coupling technique/process parameter and ppMMA thin films properties were investigated.

• 한국전산구조공학회논문집
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• 제32권6호
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• pp.349-357
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• 2019

유한요소법(finite element method)은 다양한 분야에서 재료의 역학적 거동을 더욱더 현실적으로 해석하고 예측하는 방법으로 다양한 분야의 제품 개발에 적용되고 있다. 하지만 섬유배향과 변형률 속도가 역학적 특성에 영향을 미치는 유리섬유 강화 플라스틱 복합재료에 관한 수치해석을 이용한 접근 방법은 현재까지 다소 어려움이 있다. 본 연구의 목적은 고분자, 고무, 금속 등과 같은 다양한 복합재료를 위한 선형, 비선형 다중스케일 재료 모델링 프로그램인 Digimat의 수치해석 재료 모델을 활용하여 유리섬유 강화 플라스틱 복합재료의 역학적 특성을 정의하고 검증하는 것에 있다. 또한 이를 통해 좀더 현실적으로 고분자 복합재료의 거동을 예측하고자 한다. 이를 위해 다양한 고분자 중 30wt%의 단섬유 질량 비율을 갖는 폴리부틸렌 텔레프탈레이트(polybutylene terephthalate, PBT)의 섬유배향과 변형률 속도에 따른 인장 특성을 참고문헌을 통해 조사하였다. 또한 Moldflow 프로그램을 사용한 사출해석을 통해 유리섬유 배향 정보를 계산하였으며 이를 매핑(mapping) 과정을 통해 유한요소 인장 시편 모델에 전달하였다. 대표적인 유한요소 상용 프로그램 중 하나인 LS-DYNA는 유리섬유 배향과 변형률 속도에 따른 복합재료의 인장 특성을 연구하기 위해 Digimat과의 연성해석(coupled analysis)에 활용되었다. 그리고 유리섬유 강화 플라스틱 복합재료를 해석하기 위한 LS-DYNA의 다양한 비등방성(anisotropic) 재료 모델들의 장단점을 서로 비교하고 평가하였다.

• 한국지구물리탐사학회:학술대회논문집
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• 한국지구물리탐사학회 2006년도 공동학술대회 논문집
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• pp.201-206
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• 2006

지구과학은 지구와 지구시스템을 기술(description)하던 기존의 역할에서 벗어나, 진화하는 지구 시스템 안에서 일어나는 프로세스의 모델링(process modeling), 시뮬레이션(simulation) 그리고 이러한 현상들을 구상화(visualization)하는 방향으로 그 접근 방법이 서서히 그러나 매우 역동적으로 변화하고 있다. 하지만 이러한 모델링 및 시뮬레이션은 현대의 컴퓨터 기술의 발달에도 불구하고 그 수행이 쉽지는 않다. 그 이유로는 지구의 현상들은 그 현상의 기초원인이 되는 물리적 화학적 프로세스들이 비선형적이며, 서로 다른 프로세스들이 상호 연동되어 발생하고, 시간에 따라 변화를 보이기 때문이다. 더구나 이러한 복잡한 프로세스들이 암석의 공극구조라는 매우 복잡한 구조 안에 일어날 때, 그 현상의 모델링 및 시뮬레이션은 그 어려움이 더욱 커지게 된다.따라서 이러한 지구시스템의 여러 가지 프로세스들에 대한 효과적인 모델링 및 시뮬레이션을 위해선 지구의 기본 구성단위인 암석의 구조, 즉 복잡한 공극구조의 이해 및 그 형태를 효과적으로 컴퓨터상에서 수치적으로 기술하는 방법의 개발이 선행되어야 한다. 본 발표에서는 이러한 공극스케일의 모델링을 위한 격자볼츠만 방법, 유한요소법을 이용한 수치방법과 그 결과와, 지구의 여러가지 비선형적이고 시간종속적인 프로세서의 모델링에의 응용가능성에 대한 내용을 제시한다.