• Journal of the Semiconductor & Display Technology
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• v.5 no.2 s.15
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• pp.1-5
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• 2006

The GaN thin film on the 8 periods InGaN/GaN multi-quantum well structure was grown on the sapphire substrate using metal-organic chemical vapor deposition. The nano-scaled triangular-lattice holes with the diameter of 150 nm were patterned on a polymethylmethacrylate blocking film using an electron beam nano-lithography system. The thin slab and two-dimensional photonic crystals with the thickness of 28 nm were fabricated on the GaN layer for the blue light diffraction sources. The photonic crystal with the lattice parameter of 460 nm enhances spectral intensity of photoluminescence indicating that the photonic crystals provides the source of nano-diffraction for the blue light of the 450-nm wavelength.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2219-2225
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• 2007

The reaction mechanisms for the cyclizations of N-methyl-2-(2-chloropyridin-3-yloxy)acetamide to 1-methylpyrido[ 3,2-b][1,4]oxazin-2-one and 1-methyl-pyrido[2,3-b][1,4]oxazin-2-one were investigated using ab initio Hartree-Fock, second-order Moller-Plesset perturbation, single point coupled cluster with both single and double substitution, and density functional theory methods. The 5-membered spiro intermediate (2) is optimized from the cyclization of the acyclic reactants through the proton-transfer reaction, and this intermediate proceeds continuously to the 6-membered intermediate through either a stepwise or a concerted reaction. In the stepwise reaction, an N-bridge-type intermediate as a stable structure is optimized, whereas, in the concerted reaction, the O-bridge-type intermediate is not optimized.

• Journal of the Optical Society of Korea
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• v.15 no.2
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• pp.187-195
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• 2011

We have designed two photonic crystal waveguide (PCW) structures with output focused beams in order to achieve more coupling between photonic devices and decrease the mismatch losses in photonic integrated circuits. PCW with coupled resonator optical waveguide (CROW) termination has been optimized by both one dimensional (1D) and seven dimensional (7D) particle swarm optimization (PSO) algorithms by evaluating the fitness function by the finite difference time domain (FDTD) method. The 1D and 7D-optimizations caused the factors of 2.79 and 3.875 improvements in intensity of the main lobe compared to the non-optimized structure, whereas the FWHM in 7D-optimized structure was increased, unlike the 1D case. It has also been shown that the increment of focusing causes decrement of the bandwidth.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.1
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• pp.81-88
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• 1997

Wavelength tunable, narrowbandwidth wvelength filters in compound semiconductor have been modeled, fabricated, and characterized. In order to obtain a narrow bandpass characteristics at 1.55.$\mu$m, a highly asymmertrical directional coupler structure composed of a strongly guided ridge waveguide and a weakly guided strip-loaded waveguide was used. The optimized filter structure modeling has been obtained by using the spectral index method, effective index method, and the coupled mode theory. Operation at a center wavelength a 1.537.mu.m with a bandwidth of 1.8nm and transfer efficiency of 50-70% is experimentally achieved. For the purpose of center wavelength tuning, the carrier injection in p-n diode structure has been theoretically investigated. It has been found that the tuning range of nanometer can be easily obtained by moderate amount carrier injection. We also found that the bandwidth becomes broad as the center wavelength tuning increases.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.250-251
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• 2009

For the fabrication of a multilevel resist (MLR) based on a very thin amorphous carbon (a-C) layer an $Si_{3}N_{4}$ hard-mask layer, the selective etching of the $Si_{3}N_{4}$ layer using physical-vapor-deposited (PVD) a-C mask was investigated in a dual-frequency superimposed capacitively coupled plasma etcher by varying the following process parameters in $CH_{2}F_{2}/H_{2}/Ar$ plasmas : HF/LF powr ratio ($P_{HF}/P_{LF}$), and $CH_{2}F_{2}$ and $H_2$ flow rates. It was found that infinitely high etch selectivities of the $Si_{3}N_{4}$ layers to the PVD a-C on both the blanket and patterned wafers could be obtained for certain gas flow conditions. The $H_2$ and $CH_{2}F_{2}$ flow ratio was found to play a critical role in determining the process window for infinite $Si_{3}N_{4}$/PVDa-C etch selectivity, due to the change in the degree of polymerization. Etching of ArF PR/BARC/$SiO_x$/PVDa-C/$Si_{3}N_{4}$ MLR structure supported the possibility of using a very thin PVD a-C layer as an etch-mask layer for the $Si_{3}N_{4}$ layer.

• Structural Engineering and Mechanics
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• v.52 no.3
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• pp.573-593
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• 2014

Pounding between adjacent buildings is a significant challenge in metropolitan areas because buildings of different heights collide during earthquake excitations due to varying dynamic properties and narrow separation gaps. The seismic responses of adjacent buildings of varying height, coupled through soil subjected to earthquake-induced pounding, are evaluated in this paper. The lumped mass model is used to simulate the buildings and soil, while the linear visco-elastic contact force model is used to simulate pounding forces. The results indicate while the taller building is almost unaffected when the shorter building is very short, it suffers more from pounding with increasing height of the shorter building. The shorter building suffers more from the pounding with decreasing height and when its height differs substantially from that of the taller building. The minimum required separation gap to prevent pounding is increased with increasing height of the shorter building until the buildings become almost in-phase. Considering the soil effect; pounding forces are reduced, displacements and story shears are increased after pounding, and also, minimum separation gap required to prevent pounding is increased.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.987-994
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• 2008

The optimal structure of the Tonpilz transducer was designed. First, the FE model of the transducer was constructed, that included all the details of the transducer which used practical environment. The validity of the FE model was verified through the impedance analysis of the transducer. Second, the resonance frequency, the sound pressure, the bandwidth, and the impulsive shock pressure of the transducer in relation to its structural variables were analyzed. Third, the design method of $2^n$ experiments was employed to reduce the number of analysis cases, and through statistical multiple regression analysis of the results, the functional forms of the transducer performances that could consider the cross-coupled effects of the structural variables were derived. Based on the all results, the optimal geometry of the Tonpilz transducer that had the highest sound pressure level at the desired working environment was determined through the optimization with the SQP-PD method of a target function composed of the transducer performance. Furthermore, for the convenience of a user, the automatic process program making the optimal structure of the acoustic transducer automatically at a given target and a desired working environment was made. The developed method can reflect all the cross-coupled effects of multiple structural variables, and can be extended to the design of general acoustic transducers.

• Proceedings of the IEEK Conference
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• 2002.07a
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• pp.345-348
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• 2002

A complementary VHF CMOS active inductor is described. The proposed circuit employs 'p-type' and 'n-type' active inductor to obtain enlarged signal handling ability. Under the same inductance, Q value, and power consumption, the proposed circuit shows more than 12-㏈ improvement in dynamic range while maintaining high-frequency operation. Further enhancement is obtained by using a fully differential floating inductor structure. A 1-㎓ 4$\^$th/-order coupled-resonator filter is designed to demonstrate the potential of the proposed active inductor.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.218-223
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• 1997

The technique used is the active structural acoutrol (ASAC)approach which involves controlling the acoustic response of a panel-cavity covpled system by applying oscillating force inputs in the form of prezoelectric actuators directly to the flexible panel. The linear quadratic Gaussian control scheme is used for attenuating nosie inside the rectangular enclosure causing by flexible wall vibration. Results indicated the application of control inputs to the radiating wall resukted in considerable noise reductions inside the cavity. Auso,the possibility of application to the more complicated fluid-structure coupled system is verified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1990.10a
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• pp.45-46
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• 1990

In this study, we fabricated Plasma polymerized styrene thin films which used a new capacitive type apparatus. RE Power supply (13.56 MHz) was used and styrene monomer was adopted. After the preparation of thin films the molecular structure of Plasma polymerized styrene films was analyzed by some analyses as IR, FT-IR, Gas chromatography and so on.