• 제목/요약/키워드: copper electrode

검색결과 379건 처리시간 0.031초

High-temperature Adhesion Promoter Based on (3-Glycidoxypropyl) Trimethoxysilane for Cu Paste

  • Jiang, Jianwei;Koo, Yong Hwan;Kim, Hye Won;Park, Ji Hyun;Kang, Hyun Suk;Lee, Byung Cheol;Kim, Sang-Ho;Song, Hee-Eun;Piao, Longhai
    • Bulletin of the Korean Chemical Society
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    • 제35권10호
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    • pp.3025-3029
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    • 2014
  • To realize copper-based electrode materials for printed electronics applications, it is necessary to improve the adhesion strength between conductive lines and the substrate. Here, we report the preparation of Cu pastes using (3-glycidoxypropyl) trimethoxysilane (GPTMS) prepolymer as an adhesion promoter (AP). The Cu pastes were screen-printed on glass and polyimide (PI) substrates and sintered at high temperatures (> $250^{\circ}C$) under a formic acid/$N_2$ environment. According to the adhesion strengths and electrical conductivities of the sintered Cu films, the optimized Cu paste was composed of 1.0 wt % GPTMS prepolymer, 83.6 wt % Cu powder and 15.4 wt % vehicle. After sintering at $400^{\circ}C$ on a glass substrate and $275^{\circ}C$ on a PI substrate, the Cu films showed the sheet resistances of $10.0m{\Omega}/sq$. and $5.2m{\Omega}/sq$., respectively. Furthermore, the sintered Cu films exhibit excellent adhesion properties according to the results of the ASTM-D3359 standard test.

Mo 하지층의 첨가원소(Ti) 농도에 따른 Cu 박막의 특성 (Characteristic of Copper Films on Molybdenum Substrate by Addition of Titanium in an Advanced Metallization Process)

  • 홍태기;이재갑
    • 한국재료학회지
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    • 제17권9호
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    • pp.484-488
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    • 2007
  • Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4+NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.

Plasma Assisted ALD 장비 계발과 PAALD법으로 증착 된 TaN 박막의 전기적 특성 (Development of Plasma Assisted ALD equipment and electrical characteristic of TaN thin film deposited PAALD method)

  • 도관우;김경민;양충모;박성근;나경일;이정희;이종현
    • 한국반도체및디스플레이장비학회:학술대회논문집
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    • 한국반도체및디스플레이장비학회 2005년도 춘계 학술대회
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    • pp.139-145
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    • 2005
  • In the study, in order to deposit TaN thin film using diffusion barrier and bottom electrode we made the Plasma Assisted ALD equipment and confirmed the electrical characteristic of TaN thin films deposited PAALD method, PAALD equipment depositing TaN thin film using PEMAT(pentakis(ethylmethlyamlno) tantalum) Precursor and $NH_3$ reaction gas is aware that TaN thin film deposited of high density and amorphous phase with XRD measurement The degree of diffusion and react ion taking place in Cu/TaN(deposited using 150 W PAALD)/$SiO_2$/Si systems with increasing annealing temperature was estimated from MOS capacitor property and the $SiO_2(600\;\AA)$/Si system surface analysis by C-V measurement and secondary ion material spectrometer(SIMS) after Cu/TaN/$SiO_2(400\;\AA)$ system etching. TaN thin film deposited PAALD method diffusion barrier have a good diffusion barrier property up to $500^{\circ}C$.

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Understanding of Non-Thermal Atmospheric Pressure Plasma Characteristics Produced in Parallel Plate Type Geometry

  • Choe, Wonho;Moon, Se Youn;Kim, Dan Bee;Jung, Heesoo;Rhee, Jun Kyu;Gweon, Bomi
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.144-144
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    • 2013
  • Non-thermal atmospheric pressure plasmas have recently garnered much attention due to their unique physical and chemical properties that are sometimes significantly different from those of low pressure plasmas. It can offer many possible application areas including nano and bio/medical areas. Many different types of plasma sources have been developed for specific needs, which can be one of the important merits of the atmospheric pressure plasmas since characteristics of the produced plasma depend significantly on operating parameters such as driving frequency, supply gas type, driving voltage waveform, gas flow rate, gas composition, geometrical factor etc. Among many source configurations, parallel plate type geometry is one of the simplest configurations so that it can offer many insights for understanding basic underlying physics. Traditionally, the parallel plate type set up has been studied actively for understanding low pressure plasma physics along with extensive employment in industries for the same reason. By considering that understanding basic physics, in conjunction with plasma-surface interactions especially for nano & bio materials, should be pursued in parallel with applications, we investigated atmospheric pressure discharge characteristics in a parallel plate type capacitive discharge source with two parallel copper electrodes of 60 mm in diameter and several millimeters in gap distance. In this presentation, some plasma characteristics by varying many operating variables such as inter-electrode distance, gas pressure, gas composition, driving frequency etc will be discussed. The results may be utilized for plasma control for widening application flexibility.

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백금 나노입자가 분산된 3차원 산화구리 나노구조체 기반의 글루코스 검출용 비효소적 전기화학 센서 개발 (Non-Enzymatic Glucose Sensor Based on a Copper Oxide Nanoflowers Electrode Decorated with Pt Nanoparticles)

  • 송민정
    • Korean Chemical Engineering Research
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    • 제56권5호
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    • pp.705-710
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    • 2018
  • 본 연구에서는 백금 나노입자가 분산된 산화구리 나노구조체 기반의 비효소적 글루코스 센서를 개발하였다. 3차원 구조의 산화구리 나노구조체는 hydrothermal method를 통해 Cu foil 위에 직접 합성되었으며, 합성된 나노구조체 표면위에 전기화학적 증착법으로 백금 나노입자들을 분산시켜 전극을 제작하였다. 준비된 전극 샘플의 표면 구조는 주사 전자 현미경(SEM)과 에너지분산형 분광기(EDS)을 이용하여 분석하였으며, 전기화학적 특성 및 센싱 성능은 알칼리 상태에서 시간대전류법 (CA)과 순환전압 전류법(CV)을 통하여 조사하였다. 개발된 비효소적 글루코스 센서는 산화구리 나노구조체와 백금 나노입자의 접목에 의한 시너지 효과 덕분에 높은 감도와 넓은 선형 구간, 빠른 감응 속도 등의 향상된 센싱 특성을 보였다.

IDT형의 전극 형태가 SFIT형 필터의 특성에 미치는 영향 (The effects of the shape of IDT electrode pair on the characteristics of SFIT filter)

  • 유일현
    • 한국정보통신학회논문지
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    • 제13권12호
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    • pp.2662-2670
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    • 2009
  • 반사기 형태에 따른 경사진 빗살무늬 변환기 SAW 필터 특성을 비교하기 위해 모의실험을 통해 Langasite 기판위에 전극을 형성시켰으며, 전극재료로는 Al-Cu를 사용하였다. 모의실험을 바탕으로 입력단에는 IDT를 직렬형태로 연결시킨 block 형태로 하중을 가하는 전극 방법을 쓰고 출력단은 withdrawal 형태로 하중을 가하는 방법을 써서 제작하였다. 이를 바탕으로 광대역의 SAW 필터 전극 설계 방식에 대한 적절한 위상조건도 얻고자 시도하였다. Langasite 기판위에 형성시킨 입 출력빗살무늬 변환기 전극수는 50쌍, 두께는$5000{\AA}$으로 하였으며, 반사기 폭과 간격은 각각 $3.6{\mu}m$$2.0{\mu}m$으로 하였다. 제작한필터의 주파수 특성은 중심주파수가 대략 190MHz정도, 대역폭은 8.0MHz 정도로 측정되었으며, matching 후 return-loss는 -16dB 이하이고, 리플 특성은 4dB 정도이며, 반사에 의한 잔향은 -20dB 이하로 측정되었다.

전착법을 이용한 CuInSe2 박막태양전지 광활성층의 조성 조절 (Composition Control of a Light Absorbing Layer of CuInSe2 Thin Film Solar Cells Prepared by Electrodeposition)

  • 박영일;김동환;서경원;정증현;김홍곤
    • 한국전기전자재료학회논문지
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    • 제26권3호
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    • pp.232-239
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    • 2013
  • Thin light-active layers of the $CuInSe_2$ solar cell were prepared on Mo-coated sodalime glass substrates by one-step electrodeposition and post-annealing. The structure, morphology, and composition of $CuInSe_2$ film could be controlled by deposition parameters, such as the composition of metallic precursors, the concentration of complexing agents, and the temperature of post-annealing with elemental selenium. A dense and uniform Cu-poor $CuInSe_2$ film was successfully obtained in a range of parametric variation of electrodeposition with a constant voltage of -0.5 V vs. a Ag/AgCl reference electrode. The post-annealing of the film at high temperature above $500^{\circ}C$ induced crystallization of $CuInSe_2$ with well-developed grains. The KCN-treatment of the annealed $CuInSe_2$ films further induced Cu-poor $CuInSe_2$ films without secondary phases, such as $Cu_2Se$. The structure, morphology, and composition of $CuInSe_2$ films were compared with respect to the conditions of electrodeposition and post-annealing using SEM, XRD, Raman, AES and EDS analysis. And the conditions for preparing device-quality $CuInSe_2$ films by electrodeposition were proposed.

유기 발광소자 ITO/Buffer $layer/TPD/Alq_3/LiAl$ 구조에서의 수명 분석 (Lifetime analysis of organic light-emitting diodes in ITO/Buffer $layer/TPD/Alq_3/LiAl$ structure)

  • 정동회;최운식;박권화;이준웅;김진철;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.158-161
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    • 2004
  • We have studied a lifetime in organic light-emitting diodes depending on buffer layer. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. And the cathode for electron injection was LiAl. Phthalocyanine Copper(CuPc), Poly(3,4-ethylenedioxythiophene):poly (PEDOT:PSS), or poly (9-vinylcarbazole)(PVK) material was used as a buffer layer. A thermal evaporation was performed to make a thickness of 40nm of TPD layer at a rate of $0.5{\sim}1\;{\AA}/s$ at a base pressure of $5{\times}10^{-6}\;torr$. A material of tris(8-hydroxyquinolinate) Aluminum($Alq_3$) was used as an electron transport and emissive layer. A thermal evaporation of $Alq_3$ was done at a deposition rate of $0.7{\sim}0.8[{\AA}/s]$ at a base pressure of $5{\times}10^{-6}\;torr$. By varying the buffer material, hole injection at the interface could be controlled because of the change in work function. Devices with CuPc and PEDOT:PSS buffer layer are superior to the other PVK buffer layer.

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초고온초전도 SMES의 절연특성 (The Electrical Insulation Characteristics of HTS SMES)

  • 천현권;최재형;김해종;성기철;김상현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.623-626
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    • 2005
  • Toward the practical applications, on operation of conduction-cooled HTS SMES at temperatures well below 77 K should be investigated, in order to take advantage of a greater critical current density of HTS and considerably reduce the size and weight of the system. Recently, research and development concerning application of the conduction-cooled HTS SMES that is easily movement are actively progressing in Korea. Electrical insulation under cryogenic temperature is a key and an important element in the application of this apparatus. Using multi wrapped copper by polyimide film for HIS SMES, the breakdown characteristics of models for turn-to-turn, that is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on breakdown voltage under ac and impulse voltage in $LN_2$ was carried.

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CuO/Au@MWCNTs 나노복합재 기반 전기화학적 포도당 바이오센서의 민감도 개선 (Improvement in Sensitivity of Electrochemical Glucose Biosensor Based on CuO/Au@MWCNTs Nanocomposites)

  • 박미선;배태성;이영석
    • 공업화학
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    • 제27권2호
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    • pp.145-152
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    • 2016
  • 본 연구에서는 전기화학적 바이오센서의 포도당 감지능을 높이고자 금 나노 입자가 분산된 다중벽탄소나노튜브(multi-walled carbon nanotube, MWCNTs)에 CuO를 도입하였다. 금 나노 입자로 인하여 나노 클러스터(cluster) 형상을 갖는 CuO가 합성되었으며, 이는 포도당 감지능력에 매우 큰 영향을 나타내었다. 0.1 mole의 CuO가 합성되었을 때 CuO/Au@MWCNTs 나노복합재를 전극재료로서 바이오센서는 $504.1{\mu}A\;mM^{-1}cm^{-2}$으로 가장 높은 민감도를 보여주었으며, 이 값은 MWCNTs만을 전극으로 이용할 때보다 약 4배 정도 컸다. 또한, 0-10 mM의 긴 선형 구간(linear range)과 0.008 mM의 낮은 LoD (limit of detection) 값을 보여주었다. 이러한 실험 결과들은 CuO/Au@MWCNTs 나노복합재가 CuO를 이용한 다른 전기화학적 바이오센서보다 우수하다는 것을 입증하였으며, 이는 나노 클러스터 형상의 CuO가 포도당 감지에서 전기화학적 반응에 유리하기 때문으로 사료된다.