• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1046-1049
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• 2002

In this paper, a sub-harmonic dual-gate FET mixer for IMT-2000 base-station was designed by using single-gate FET cascode structure and driven by the second order harmonic component of LO signal. The dual-gate FET mixer has the characteristic of high conversion gain and good isolation between ports. Sub-harmonic mixing is frequently used to extend RF bandwidth for fixed LO frequency or to make LO frequency lower. Furthermore, the LO-to-RF isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer because the frequency separation between the RE and LO frequency is large. As RF power is -30dBm and LO power is 0dBm, the designed mixer shows the -47.17dBm LO-to-RF leakage power level, 10dB conversion gain, -0.5dBm OIP3, -10.5dBm IIP3 and -1dBm 1dB gain compression point.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.2
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• pp.45-49
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• 2009

In this paper, a direct down conversion LNA/Mixer has been designed and tested for 900Mhz UHF RFID application. The designed circuit has been implemented in 0.18um CMOS technology with 3.3V operation. In this work, a common gate input architecture has been used to cope with the higher input self jamming level. This LNA/Mixer is designed to support two operating modes of high gain mode and low gain mode according to the input jamming levels. The measured results show that the input referred P1dBs are 4dBm of high gain mode and 11dBm of low gain mode, and the conversion gains are 12dB and 3dB in high and low gain mode respectively The power consumptions are 60mW for high gain mode and 79mW for low gain mode. The noise figures are 16dB and 20dB in high gain mode and low gain mode respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.12
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• pp.1167-1172
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• 2013

This paper presents a X-band doppler radar with high conversion gain using a self-oscillating-mixer(SOM) that oscillation and frequency mixing is realized at the same time. To improve phase noise of the SOM oscillator, a ${\lambda}/2$ slotted square patch resonator(SSPR) was proposed, which shows high Q-factor of 175.4 and the 50 % reduced circuit area compared to the conventional resonator. To implement the low power system, low biasing voltage of 1.7 V was supplied. To enhance the conversion gain of the SOM, bias circuit is configured near the pinch-off region of transistor, and the conversion gain was optimized. The output power of the proposed SOM was -3.16 dBm at 10.65 GHz. A high conversion gain of 9.48 dB was obtained whereas DC Power consumption is relatively low about 7.65 mW. The phase noise is -90.91 dBc/Hz at 100 kHz offset. The figure-of-merit(FOM) of the proposed SOM was measured as -181.8 dBc/Hz, which is supplier to other SOMs by more than about 7 dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.5
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• pp.197-203
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• 2003

In this paper, we have presented millimeter-wave high conversion gain quadruple subharmonic mixers adopting the cascode harmonic generator The subharmonic mixers were successfully integrated by using 0.1 ${\mu}{\textrm}{m}$ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide(CPW) structures. Measured output of 1st, 2nd and 4th harmonics of the fabricated cascode 4th harmonic generator are -21.42 dBm, -32.65 dBm and -13.45 dBm, respectively, for an input power of 10 dBm at 14.5 GHz. We showed that the highest conversion gain of 3.4 dB has obtained thus far at a LO power of 13 dBm from the fabricated subharmonic mixers. The millimeter-wave subharmonic mixer also ensure a high degree of isolation showing -53.6 dB in the LO-to-IF and -46.2 dB in the LO-to-RF, respectively, at a frequency of 14.5 GHz. The high conversion gain achieved in this work is the first report among the millimeter-wave subharmonic mixers.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.101-106
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• 2014

This paper presents a wide dynamic range radio-frequency (RF) root-mean-square (RMS) power detector using an automatic gain control (AGC) loop. The AGC loop consists of a variable gain amplifier (VGA), RMS conversion block and gain control block. The VGA exploits dB-linear gain characteristic of the cascade VGA. The proposed circuit utilizes full-wave squaring and generates a DC voltage proportional to the RMS of an input RF signal. The proposed RMS power detector operates from 500MHz to 5GHz. The detecting input signal range is from 0 dBm to -70 dBm or more with a conversion gain of -4.53 mV/dBm. The proposed RMS power detector is designed in a 65-nm 1.2-V CMOS process, and dissipates a power of 5 mW. The total active area is $0.0097mm^2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.3
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• pp.492-498
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• 2003

In this paper, We analyze the optimum bias conditions of cascode coupled microwave mixer for maximum conversion gain mixer. Microwave self-oscillating mixer by two GaAs MESFET cascode coupled, to upper GaAs MESFET operating as a oscillator with high Q dielectric resonator and the lower GaAs MESFET operated as a mixer with low noise and high conversion characteristics. As a result of experiments, cascode coupled microwave self oscillating mixer according to optimun bias shows an 5.92 dBm oscillating power, -132.0dBc/Hz @ 100KHz at 5.15GHz and 3dB conversion loss.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.11
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• pp.1318-1323
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• 2010

A lot of demand for parts of millimeter wave band, as would be expected 57~63 GHz band down conversion mixer was designed and fabricated using IHP 0.25 um SiGe process. Designed and fabricated mixer was double balanced type and located reduced 3D balun at RF port and buffer amplifier at outport for suppression LO signal and conversion gain. Fabricated mixer measured conversion gain of 13.8 dB, $P1dB_{in}$ -17 dBm and 88 mA of current consumption characteristics, respectively.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.4
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• pp.599-609
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• 2000

In this paper, sub-harmonically pumped single balanced resistive mixers are presented . Frequency bandwidth is selected for a Ku-band, which is 11.75-12.25GHz for RF, 5.375∼5.625 GHz for LO, and 1 GHz for IF signals. A rat-race hybrid is designed for the accomplishment of single balanced type. A low pass filter (LPF) with photonic band gap(PBG) structure is used for good conversion loss and unwanted harmonics suppression. Two types of mixers are suggested, which are one with no gate bias for no DC power consumption and the other with the IF amplifier for conversion gain. When a LO signal with the power of 6 dBm at 5.5 GHz is injected, a conversion loss of 12.17dB and a conversion gain of 7.83 dB are obtained for each mixer. For the both mixers , LO to RF isolation of 20 dB and LO to IF isolation of 60dB are obtained. With the RF power of -30dBm to -3dBm, the mixer shows linear characteristics region of IF. this mixer can be applied for Ku-band and other microwave communication systems.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.151-154
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• 2002

All-optical OR logic gate is realized by use of gain saturation and wavelength conversion in the semiconductor optical amplifiers (SOA). It is operated by the nonlinearity of the SOA gain and hence to obtain the sufficient gain saturation of the SOA, pump signals are amplified by an Er-doped fiber amplifier (EDFA) at the input of the SOA. The operation characteristics of all-optical OR logic gate are successfully measured at 2.5 Gbit/s.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.365-368
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• 2000

This paper describes image-rejection down conversion mixer for bluetooth application using 0.35u CMOS process. the proposed architecture is composed of LO phase shifter, mixer core, IF buffer, and IF phase shifter. IF phase shifter is designed using polyphase fillet. Simulation results show conversion gain = l0㏈, input 1㏈ compression point = -15.7㏈m. input third-order intercept point(IIP3) = -4.4㏈m, and image-rejection ratio = 37.8㏈, respectively, at 3V supply voltage, and 15.7㎃ current.