• 한국초전도저온공학회:학술대회논문집
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• 한국초전도저온공학회 2002년도 학술대회 논문집
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• pp.163-164
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• 2002

We have measured the I-V characteristics and contact resistance of jointed BSSCO tape in the superconducting state. Electrical joint was made by various type of solder. Estimated critical current was about 30 Amp, and the contact resistance of the joint was about 350 nOhm.

• Carbon letters
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• 제14권3호
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• pp.162-170
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• 2013

The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal contact. The understanding of graphene-metal is therefore critical for the successful development of graphene-based electronic devices, especially field-effect-transistors. Here, we provide a review of the peculiar properties of graphene-metal contacts, including work function pinning, the charge transport mechanism, the impact of the process on the contract resistance, and other factors.

• Corrosion Science and Technology
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• 제15권4호
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• pp.166-170
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• 2016

The combined process of porous type anodizing and desiccation treatment was applied to improve wettability of A1050 aluminum alloy. The water contact angles of anodized samples were increaseds considerably with desiccation treatment. However, there was no considerable effect of polishing and anodizing time on water contact angle. The corrosion behavior with the treatments was investigated electrochemically. The corrosion resistance of the samples in 3.5 mass% NaCl solutions increased with higher contact angle. Anodized and desiccated samples showed better corrosion resistance than un-desiccated samples around rest potential region.

• 전자공학회논문지A
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• 제31A권9호
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• pp.78-88
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• 1994

The electrical properties of TiM/TiSi$_{2}$ bilayer formed by rapid thermal anneal in NH$_{3}$ ambient after the Ti film is deposited on silicon cubstrate are investigated. N$^{+}$ contact resistance slightly increases with increasing annealing temperature with P$^{+}$ contact resistance decreases. The contact resistance of N$^{+}$ contance was less than 24[.OMEGA.] but P$^{+}$ thatn that of N$^{+}$ contact but the leakage current indicates degradation of the contact at high annealing temperature for both N$^{+}$ and contacts. The leakage current of N$^{+}$ Junction was less than 0.06[fA/${\mu}m^{2}$] but P$^{+}$ contact was 0.11-0.15[fA/${\mu}m^{2}$]. The junction breakdown voltage for N$^{+}$ junction remains contant with increasing annealing temperature while P$^{+}$ junction slightly decreases. The Electrical properties of a two step annealing are better than that of one step annealing. The Tin/TiSi$_{2}$ bilayer formed by RTA in NH$_{3}$ ambient reveals good electrical properties to be applicable at ULSI contact.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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• pp.91.2-91.2
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• 2010

The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.

• Tribology and Lubricants
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• 제30권2호
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• pp.99-107
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• 2014

Fretting corrosion tests are conducted with a constant displacement amplitude using silver-plated brass coupons to investigate the effect of contact pressure on fretting corrosion. Three behaviors are identified based on the change in electric resistance and friction coefficient during the fretting test period, and the identified behaviors are dependent on the magnitude of the applied load. The failure cycle ($N_f$) with an electric resistance of 0.1 D cannot be achieved due to the adhesion behavior of the metal and metal contact under the higher applied load of 0.45 N. This suggests that an average contact pressure higher than 159 MPa for the silver-coated connector is desirable to gain an almost infinite lifetime. The relationship between the electric contact resistance (R) and the average contact pressure (p) can be written as $p=106.2{\times}{\Omega}^{-1.5}$.

• 대한금속재료학회지
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• 제46권12호
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• pp.817-822
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• 2008

Metal matrix composite (MMC) materials having low electrical contact resistance based on 316L stainless steel (STS) matrix alloy with $ZrB_2$ particles were fabricated for PEMFC (Polymer Electrolyte Membrane Fuel Cell) separator by powder metallurgy (PM). The effects of the boride particle addition into the matrix alloy on microstructure, surface morphology, and interfacial contact resistance (ICR) between the samples and gas diffusion layer (GDL) were investigated. Both conventional and PM 316L STS samples showed high ICR due to the existence of non-conductive passive film on the alloy surface. The addition of the boride particles, however, remarkably reduced ICR of the samples. SEM observation revealed that the boride particles were protruded out of the matrix surface and particle density existing on the surface increased with increasing the boride content, causing increase of the total contact area between the conductive particles and GDL. ICR of the samples also decreased with increasing the boride content resulted from the increased contact area.

• 대한기계학회논문집
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• 제19권1호
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• pp.193-201
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• 1995

The role of thermal contact resistance between a casting and a metal mold as well as natural convection in the melt during solidification of a pure metal is numerically studied. Numerical simulation is performed for a rectangular cavity using the coordinate transformation by boundary-fitted coordinate and pure aluminum is used as the phase- change material. The influences of thermal contact resistance on the interface shape and position, solidified volume fraction, temperature field and local heat transfer are investigated.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.654-656
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• 2008

We enhanced the conductivity of PEDOT-PSS by mixing with glycerol and fabricated the low contact resistance of source and drain[S/D] electrodes of OTFT with PEDOT-PSS by ink-jetting printing. The contact resistance was much smaller by seven times than Au with $200k{\Omega}$ at $V_G=-5V$. For the bottom contacted OTFTs, the performance was comparable to OTFTs with Au electrodes with the field effect mobility of $0.2\;cm^2/V s$.

• 한국세라믹학회지
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• 제54권1호
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• pp.66-69
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• 2017

In this study, the fabrication and electrical properties of aligned single-walled carbon nanotube (SWCNT) networks using a template-based fluidic assembly process are presented. This complementary metal-oxide-semiconductor (CMOS)-friendly process allows the formation of highly aligned lateral nanotube networks on $SiO_2/Si$ substrates, which can be easily integrated onto existing Si-based structures. To measure outstanding electrical properties of organized SWCNT devices, interfacial contact resistance between organized SWCNT devices and Ti/Au electrodes needs to be improved since conventional lithographic cleaning procedures are insufficient for the complete removal of lithographic residues in SWCNT network devices. Using optimized purification steps and controlled developing time, the interfacial contact resistance between SWCNTs and contact electrodes of Ti/Au is reached below 2% of the overall resistance in two-probe SWCNT platform. This structure can withstand current densities ${\sim}10^7A{\cdot}cm^{-2}$, equivalent to copper at similar dimensions. Also failure current density improves with decreasing network width.