• Title/Summary/Keyword: contact resistance

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Effect of Welding wires on the Contact tip Wear during GMA Welding (GMA용접에서 용접와이어와 콘택트팁의 재질이 마모에 미치는 영향)

  • Kim, Nam-Hoon;Koh, Jin-Hyun;Hwang, Yong-Hwa
    • Proceedings of the KAIS Fall Conference
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    • 2011.05b
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    • pp.683-686
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    • 2011
  • The effect of welding material such as welding wires and materials for contact tip on the contact tip wear was investigated. Two types welding wires such as solid and flux cored wire and a variety of contact tips made of Cu-P, Cu-Cr(0.25%), Cu-Cr(1%) and Cu-Cr-Zr were employed for the comparison of wear resistance. It was found that the wear resistance of contact tips materials was Cu-Cr-Zr, Cu-Cr(1%), Cu-Cr(0.25%), Cu-P in order while the solid wire had a better wear resistance than flux cored wire.

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Calculation of the Contact Resistance by Contact Surface (접점표면의 형상에 따른 접촉저항 계산)

  • Oh Yeon-ho;song Ki-dong;Kim Chin-ki;Kim Kwi-sik
    • Proceedings of the KIEE Conference
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    • summer
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    • pp.1109-1111
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    • 2004
  • This paper deals with the calculation of contact resistance depending on the applied force by modeling surface roughness. The true contact surface area is made up of many asperities of varying heights which is close to Gaussian distribution. The mean square deviation and the mean value of the Gaussian distributed asperity heights were determined in this paper. The elastic deformation of the surface asperities according to the increasing of applied force were considered. The contact resistance was also calculated by using the Greenwood analysis.

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Contact Resistance of the Flip-Chip Joints Processed with Cu Mushroom Bumps (Cu 머쉬룸 범프를 적용한 플립칩 접속부의 접속저항)

  • Park, Sun-Hee;Oh, Tae-Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.15 no.3
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    • pp.9-17
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    • 2008
  • Cu mushroom bumps were formed by electrodeposition and flip-chip bonded to Sn substrate pads. Contact resistances of the Cu-mushroom-bump joints were measured and compared with those of the Sn-planar-bump joints. The Cu-mushroom-bump joints, processed at bonding stresses ranging from 19.1 to 95.2 MPa, exhibited contact resistances near $15m\Omega$/bump. Superior contact-resistance characteristics to those of the Sn-planar-bump joints were obtained with the Cu-mushroom-bump joints. Contact resistance of the Cu-mushroom-bump joints was not dependent upon the thickness of the as-elecroplated Sn-capcoating layer ranging from $1{\mu}m$ to $4{\mu}m$. When the Sn-cap-coating layer was reflowed, however, the contact resistance was greatly affected by the thickness and the reflow time of the Sn-cap-coating layer.

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Thermal-Fluid Coupled Analysis for Injection Molding Process by Considering Thermal Contact Resistance (사출금형의 열접촉 저항을 고려한 성형과정의 열-유동 연계해석)

  • Sohn, Dong-Hwi;Kim, Kyung-Min;Park, Keun
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.35 no.12
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    • pp.1627-1633
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    • 2011
  • Injection molds are generally fabricated by assembling a number of plates in which the core and cavity components are assembled. This assembled structure has a number of contact interfaces where the heat transfer characteristics are affected by thermal contact resistance. In previous studies, numerical approaches were investigated to predict the effect of thermal contact resistance on the temperature distribution of injection molds. In this study, thermal-fluid coupled numerical analyses are performed to take into account the thermal contact effect on the numerical evaluation of the mold filling characteristics. Comparisons with experimental results show that the proposed coupled analysis provides more reliable results than the conventional analyses in predicting the mold filling characteristics by taking into account the effect of thermal contact resistance inside the injection mold assembly.

Dependence of contact resistance in SiC device by annealing conditions (어닐링 조건에 의한 SiC 소자에서 콘택저항의 변화)

  • Kim, Seong-Jeen
    • Journal of IKEEE
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    • v.25 no.3
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    • pp.467-472
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    • 2021
  • Stable operation of semiconductor devices is needed even at high temperatures. Among the structures of semiconductor devices, the area that can cause unstable electrical responses at high temperatures is the contact layer between the metal and the semiconductor. In this study, the effect of annealing conditions included in the process of forming a contact layer of nickel silicide(NiSix) on a p-type SiC layer on the specific contact resistance of the contact layer and the total resistance between the metal and the semiconductor was investigated. To this end, a series of electrodes for TLM (transfer length method) measurements were patterned on the 4 inch p-type SiC layer under conditions of changing annealing temperature of 1700 and 1800 ℃ and annealing time of 30 and 60 minutes. As a result, it was confirmed that the annealing conditions affect the resistance of the contact layer and the electrical stability of the device.

A Study on the Electrical Fire Risk of Terminal Block Due to Single and Composite Cause (단일 및 복합 원인에 의한 단자대 전기화재위험성에 관한 연구)

  • Kim, Si-Kuk;Gum, Dong-Shin;Lee, Chun-Ha
    • Fire Science and Engineering
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    • v.29 no.5
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    • pp.57-66
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    • 2015
  • This thesis is based on a research to investigate the electrical fire risk due to the single and composite cause in a terminal block. This paper analyzed the thermal characteristics depending on the screw torque change and contact resistance change to measure the fire risk due to the poor contact from single cause first. To measure the fire risk due to the composite cause, the acceleration tracking depending on the contact resistance change was experimented to check the correlation of poor contact and tracking to fire. The experiment result showed that the thermal characteristics were clearer as the screw torque in poor contact status and magnitude of contact resistance increased and that the thermal characteristics of terminal block depending on the contact resistance change was more reliable than the thermal characteristics depending on the screw torque change. Moreover, the terminal block poor contact and tracking were correlated in the case of the composite cause, and when two composite causes were interacted, the electrical fire risk was higher than the single cause.

Prediction of ship resistance in level ice based on empirical approach

  • Jeong, Seong-Yeob;Choi, Kyungsik;Kang, Kuk-Jin;Ha, Jung-Seok
    • International Journal of Naval Architecture and Ocean Engineering
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    • v.9 no.6
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    • pp.613-623
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    • 2017
  • A semi-empirical model to predict ship resistance in level ice based on Lindqvist's model is presented. This model assumes that contact between the ship and the ice is a case of symmetrical collision, and two contact cases are considered. Submersion force is calculated via Lindqvist's formula, and the crushing and breaking forces are determined by a concept of energy consideration during ship and ice impact. The effect of the contact coefficient is analyzed in the ice resistance prediction. To validate this model, the predicted results are compared with model test data of USCGC Healy and icebreaker Araon, and full-scale data of the icebreaker KV Svalbard. A relatively good agreement is achieved. As a result, the presented model is recommended for preliminary total resistance prediction in advance of the evaluation of the icebreaking performance of vessels.

Effects of PTFE and W Addition on the Anti-Wear Properties of Ni-P Coatings (PTFE 및 W 첨가가 Ni-P 도금의 내마모 특성에 미치는 영향)

  • Kim, Myung-Sik;Hong, Jin-Won;Bae, Kyoo-Sik
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.2 s.19
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    • pp.25-28
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    • 2007
  • Electroless Ni-P coating is widely used for chemical, electronic, and semiconductor equipment parts because of its corrosion resistance. The incorporation of chemically-inert PTFE particles into the Ni-P films improves properties such as, non-stick, anti-adhesive and better corrosion resistance. However, soft PTFE particles degrade the hardness, wear and abrasion resistance. In this study, effects of PTFE and W addition to the Ni-P-coatings were compared by the XRD, SEM, sheet resistance, contact angle, and microhardness measurements. The change in sheet resistance was negligible, but contact angle was doubled by the addition of PTFE and W. The microhardness was lower for Ni-P-PTFE, but higher for Ni-P-PTFE-W coatings, compared to that of Ni-P coatings.

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Modeling of Parasitic Source/Drain Resistance in FinFET Considering 3D Current Flow (3차원적 전류 흐름을 고려한 FinFET의 기생 Source/Drain 저항 모델링)

  • An, TaeYoon;Kwon, Kee-Won;Kim, SoYoung
    • Journal of the Institute of Electronics and Information Engineers
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    • v.50 no.10
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    • pp.67-75
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    • 2013
  • In this paper, an analytical model is presented for the source/drain parasitic resistance of FinFET. The parasitic resistance is a important part of a total resistance in FinFET because of current flow through the narrow fin. The model incorporates the contribution of contact and spreading resistances considering three-dimensional current flow. The contact resistance is modeled taking into account the current flow and parallel connection of dividing parts. The spreading resistance is modeled by difference between wide and narrow and using integral. We show excellent agreement between our model and simulation which is conducted by Raphael, 3D numerical field solver. It is possible to improve the accuracy of compact model such as BSIM-CMG using the proposed model.

Tooth Durability Evaluation of n Cylindrical Worm Gear by Contact Line Analysis (원통형 웜기어의 접촉선 해석)

  • Cheon, Gill-Jeong;Han, Dong-Chul
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.23 no.7 s.166
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    • pp.1231-1237
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    • 1999
  • Applying the conjugate contact condition, contact lines of a cylindrical worm gear has been calculated. The characteristics of tooth contact were analyzed and the pitting resistance were also assessed. It has been verified that: i) the length of contact is shortest on the 1st tooth of the front region, ii) the contact region is more narrow in the recess side than in the access side, iii) the contact region is more narrow in worm than in worm wheel. Hence, the pitting resistance is weakest in the recess side of the 1st contacting worm tooth.